| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/14/2001 | US20010003477 Liquid crystal display apparatus and TFT panel |
| 06/14/2001 | US20010003446 Liquid crystal display device |
| 06/14/2001 | US20010003378 Semiconductor device and manufacturing method therefor |
| 06/14/2001 | US20010003368 Open drain input/output structure and manufacturing method thereof in semiconductor device |
| 06/14/2001 | US20010003367 Trenched dmos device with low gate charges |
| 06/14/2001 | US20010003366 Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacuture method of the device |
| 06/14/2001 | US20010003364 Semiconductor and fabrication method thereof |
| 06/13/2001 | EP1107317A1 Memory device |
| 06/13/2001 | EP1107304A2 Article comprising a dielectric material of Zr-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same |
| 06/13/2001 | EP1107294A2 Method for making diaphragm-based sensors and apparatus constructed therewith |
| 06/13/2001 | EP1105918A2 Field-effect semiconductor devices |
| 06/13/2001 | EP1105880A1 Method and apparatus for providing an embedded flash-eeprom technology |
| 06/13/2001 | EP1105742A1 Method for measuring two-dimensional potential distribution in cmos semiconductor components |
| 06/13/2001 | EP1105344A1 Micromechanical sensor and corresponding production method |
| 06/13/2001 | DE19959707A1 Mikromechanische Struktur, insbesondere für einen Beschleunigungssensor Micromechanical structure, in particular for an acceleration sensor |
| 06/13/2001 | DE19958694A1 Steuerbares Halbleiterschaltelement Controllable semiconductor switching element |
| 06/13/2001 | DE19958151A1 Lateral high voltage semiconductor element used as a DMOS transistor has semiconductor regions on a semiconductor layer of a semiconductor substrate |
| 06/13/2001 | DE19957540A1 Verfahren zum Herstellen eines Feldeffekttransistors mit Anti-Punch-Through-Implantationsgebiet A method of manufacturing a field effect transistor with non-punch-through implant region |
| 06/13/2001 | DE19945433A1 Verfahren zur Fertigung von Speicher- und Logiktransistoren A process for the production of memory and logic transistors |
| 06/13/2001 | CN1299519A Method for babricating and electrically addressable silicon-on-sapphire light valve |
| 06/13/2001 | CN1299515A Ultra-high resolution liquid crystal display on silicon-on-happhire |
| 06/13/2001 | CN1299152A Electro-acoustic transducer and its mfg. method, and electro-acoustic transducing using same |
| 06/13/2001 | CN1299073A Liquid crystal display device and TFT panel |
| 06/12/2001 | USRE37228 Method of fabricating semiconductor device |
| 06/12/2001 | US6246973 Modeling method of MOSFET |
| 06/12/2001 | US6246708 Semiconductor laser with associated electronic components integrally formed therewith |
| 06/12/2001 | US6246612 Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications |
| 06/12/2001 | US6246607 Methods of programming nonvolatile memory cells by floating drain or source regions associated therewith |
| 06/12/2001 | US6246606 Memory using insulator traps |
| 06/12/2001 | US6246605 Static RAM with improved memory cell pattern |
| 06/12/2001 | US6246460 Active matrix liquid crystal display devices |
| 06/12/2001 | US6246458 Method for manufacturing liquid crystal display |
| 06/12/2001 | US6246453 Electro-optical device |
| 06/12/2001 | US6246387 Semiconductor display device |
| 06/12/2001 | US6246119 Structure of a dual damascene |
| 06/12/2001 | US6246104 Semiconductor device and method for manufacturing the same |
| 06/12/2001 | US6246103 Bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current |
| 06/12/2001 | US6246101 Isolation structure and semiconductor device including the isolation structure |
| 06/12/2001 | US6246096 Totally self-aligned transistor with tungsten gate |
| 06/12/2001 | US6246095 System and method for forming a uniform thin gate oxide layer |
| 06/12/2001 | US6246093 Hybrid surface/buried-channel MOSFET |
| 06/12/2001 | US6246092 High breakdown voltage MOS semiconductor apparatus |
| 06/12/2001 | US6246091 Lateral MOSFET having a barrier between the source/drain regions and the channel |
| 06/12/2001 | US6246090 Power trench transistor device source region formation using silicon spacer |
| 06/12/2001 | US6246089 P-channel EEPROM devices |
| 06/12/2001 | US6246085 Semiconductor device having a through-hole of a two-level structure |
| 06/12/2001 | US6246082 Semiconductor memory device with less characteristic deterioration of dielectric thin film |
| 06/12/2001 | US6246080 Semiconductor device having bent gate electrode and process for production thereof |
| 06/12/2001 | US6246079 SCR circuit with a high trigger current |
| 06/12/2001 | US6246077 Semiconductor device |
| 06/12/2001 | US6246076 Layered dielectric on silicon carbide semiconductor structures |
| 06/12/2001 | US6246073 Semiconductor device and method for producing the same |
| 06/12/2001 | US6246071 Zirconia-containing transparent and conducting oxides |
| 06/12/2001 | US6246070 Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
| 06/12/2001 | US6245689 Annealing silicon wafer substrate in a heated gaseous nitric oxide ambient, evacuation of gas and annealing substrate in a different oxidizing gas ambient to yield a silicon oxynitride diffusion barrier having a gradient nitrogen concentration |
| 06/12/2001 | US6245687 Precision wide band gap semiconductor etching |
| 06/12/2001 | US6245652 Method of forming ultra thin gate dielectric for high performance semiconductor devices |
| 06/12/2001 | US6245649 Method for forming a retrograde impurity profile |
| 06/12/2001 | US6245630 Spherical shaped semiconductor integrated circuit |
| 06/12/2001 | US6245628 Method of manufacturing a resistor in a semiconductor device |
| 06/12/2001 | US6245621 Semiconductor device manufacturing method |
| 06/12/2001 | US6245619 Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devices |
| 06/12/2001 | US6245618 Mosfet with localized amorphous region with retrograde implantation |
| 06/12/2001 | US6245616 Method of forming oxynitride gate dielectric |
| 06/12/2001 | US6245615 Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
| 06/12/2001 | US6245614 Method of manufacturing a split-gate flash memory cell with polysilicon spacers |
| 06/12/2001 | US6245609 High voltage transistor using P+ buried layer |
| 06/12/2001 | US6245607 Buried channel quasi-unipolar transistor |
| 06/12/2001 | US6245606 Forming a temporary aluminum thin film on heated, clean, atomically flat silicon surface of semiconductor integrated circuit, uniformly oxidizing aluminum in an ozone atmosphere to form a thin gate dielectric film |
| 06/12/2001 | US6245605 Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing |
| 06/12/2001 | US6245603 Manufacturing method for semiconductor device |
| 06/12/2001 | US6245602 Top gate self-aligned polysilicon TFT and a method for its production |
| 06/12/2001 | US6245508 Hybridizing dna of first length to capture probes at site, hybridizing dna of second length to capture probes at another site, observing fluorescent signals as potential is reversed, detecting sites which dehybridize at a potential |
| 06/12/2001 | US6245451 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
| 06/12/2001 | US6244112 Acceleration sensor and process for the production thereof |
| 06/07/2001 | WO2001041217A1 Low power integrated circuit with decoupling capacitors |
| 06/07/2001 | WO2001041206A2 Manufacture of trench-gate semiconductor devices |
| 06/07/2001 | WO2001041205A1 Method for producing a bipolar transistor and method for producing an integrated circuit arrangement with such a bipolar transistor |
| 06/07/2001 | WO2001041201A1 Process for fabricating a uniform gate oxide of a vertical transistor |
| 06/07/2001 | WO2001041200A1 Nitrided re-oxidised polysilicon gate to improve hot carrier performance |
| 06/07/2001 | WO2001041199A1 Integrated memory cell and method of fabrication |
| 06/07/2001 | WO2001041194A2 Semiconductor circuit arrangement and a method for producing same |
| 06/07/2001 | WO2001041187A2 Semiconductor circuit arrangement and a method for producing same |
| 06/07/2001 | WO2001040856A1 Active matrix substrate for liquid crystal display and method of manufacture for making the same |
| 06/07/2001 | WO2001033619A8 Gate dielectrics and method of making with binary non-crystaline analogs of silicon dioxide |
| 06/07/2001 | WO2001017025A3 Semi-conductor component as a delaying device and use thereof. |
| 06/07/2001 | WO1999008284A3 Novel multi-state memory |
| 06/07/2001 | US20010003061 Manufacture and cleaning of a semiconductor |
| 06/07/2001 | US20010003056 Semiconductor device and method for fabricating the same |
| 06/07/2001 | US20010003050 Method of fabricating semiconductor device |
| 06/07/2001 | US20010003049 Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device |
| 06/07/2001 | US20010002857 Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching |
| 06/07/2001 | US20010002847 Charge transfer device and method of driving the charge transfer device |
| 06/07/2001 | US20010002720 Semiconductor device using a shallow trench isolation |
| 06/07/2001 | US20010002717 Protection device and protection method for semiconductor device |
| 06/07/2001 | US20010002712 Semiconductor memory with floating gate type fet |
| 06/07/2001 | US20010002709 Process to produce ultrathin crystalline silicon nitride on Si (111 ) for advanced gate dielectrics |
| 06/07/2001 | US20010002707 Apparatus and method for simulating MOSFET |
| 06/07/2001 | US20010002706 Semiconductor device |
| 06/07/2001 | US20010002705 Semiconductor configuration with an Ohmic contact-connection and method for contacting a semiconductor configuration |