| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/28/2002 | WO2002017362A2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 02/28/2002 | WO2002016679A1 Polycrystalline semiconductor material and method of manufacture thereof |
| 02/28/2002 | WO2001088993A3 A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES |
| 02/28/2002 | WO2001086708A3 Amorphous metal oxide gate dielectric structure |
| 02/28/2002 | WO2001073854A3 Variable capacitor with programmability |
| 02/28/2002 | WO2001071819A3 Surface pin device |
| 02/28/2002 | WO2001071795A3 Method for forming high quality multiple thickness oxide layers by reducing descum induced defects |
| 02/28/2002 | WO2001066834A3 Chemical vapor deposition process for fabricating layered superlattice materials |
| 02/28/2002 | WO2001037342A3 Dram cell structure with tunnel barrier |
| 02/28/2002 | US20020025763 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| 02/28/2002 | US20020025760 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
| 02/28/2002 | US20020025759 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
| 02/28/2002 | US20020025691 Flash memory device and a fabrication process thereof, method of forming a dielectric film |
| 02/28/2002 | US20020025674 Manufacturing method of semiconductor device |
| 02/28/2002 | US20020025673 Method for forming gate by using Co-silicide |
| 02/28/2002 | US20020025667 Method of forming overmolded chip scale package and resulting product |
| 02/28/2002 | US20020025664 Process for production of gate electrode and gate electrode structure |
| 02/28/2002 | US20020025662 Semiconductor device and method for fabricating the same |
| 02/28/2002 | US20020025658 Method for forming a barrier layer |
| 02/28/2002 | US20020025652 Method and apparatus for processing composite member |
| 02/28/2002 | US20020025643 Method for using thin spacers and oxidation in gate oxides |
| 02/28/2002 | US20020025642 Method for using thin spacers and oxidation in gate oxides |
| 02/28/2002 | US20020025641 Method for fabricating a MOSFET and a MOSFET |
| 02/28/2002 | US20020025639 Method for fabricating abrupt source/drain extensions with controllable gate electrode overlap |
| 02/28/2002 | US20020025637 Method for manufacturing self-matching transistor |
| 02/28/2002 | US20020025636 Field effect transitor with non-floating body and method for forming same on a bulk silicon wafer |
| 02/28/2002 | US20020025635 Method for fabricating connection structure between segment transistor and memory cell region of flash memory device |
| 02/28/2002 | US20020025633 MOSFET gate insulating film and method of manufacturing the same |
| 02/28/2002 | US20020025630 Semiconductor device and method for manufacturing the device |
| 02/28/2002 | US20020025626 Forming barriers |
| 02/28/2002 | US20020025620 Methods of forming field effect transistors and related field effect transistor constructions |
| 02/28/2002 | US20020025615 Semiconductor device and method for producing the same |
| 02/28/2002 | US20020025614 Method of fabricating thin film transistor using buffer layer and the thin film transistor |
| 02/28/2002 | US20020025613 MIS semiconductor device having an LDD structure and a manufacturing method therefor |
| 02/28/2002 | US20020025591 Method of manufacturing a semiconductor device |
| 02/28/2002 | US20020025391 Electrically conductive material is selected from the group of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyphenylenes, polyanilines, polythiophenes, polyphenylene sulfide, polyacetylenes, blends or copolymer |
| 02/28/2002 | US20020024862 Nonvolatile semiconductor memory test circuit and method, nonvolatile semiconductor memory and method for fabricating nonvolatile semiconductor memory |
| 02/28/2002 | US20020024849 Nonvolatile semiconductor memory |
| 02/28/2002 | US20020024848 Nonvolatile semiconductor memory |
| 02/28/2002 | US20020024629 Electro-optical device |
| 02/28/2002 | US20020024627 Liquid crystal display device and method of manufacturing the same |
| 02/28/2002 | US20020024391 High-frequency semiconductor device |
| 02/28/2002 | US20020024375 Compound semiconductor switching device for high frequency switching |
| 02/28/2002 | US20020024119 Semiconductor device and method of manufacturing the same |
| 02/28/2002 | US20020024114 Semiconductor device |
| 02/28/2002 | US20020024113 Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
| 02/28/2002 | US20020024108 Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
| 02/28/2002 | US20020024107 Semiconductor device and method of manufacturing the same |
| 02/28/2002 | US20020024100 Shallow doped junctions with a variable profile gradation of dopants |
| 02/28/2002 | US20020024099 Transistor |
| 02/28/2002 | US20020024097 TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof |
| 02/28/2002 | US20020024095 Semiconductor device manufacturing method and semiconductor device |
| 02/28/2002 | US20020024094 Novel cmos circuit of gaas/ge on si substrate |
| 02/28/2002 | US20020024092 Memory cell, memory cell arrangement and fabrication method |
| 02/28/2002 | US20020024091 Trench structure substantially filled with high-conductivity material |
| 02/28/2002 | US20020024090 3-D smart power IC |
| 02/28/2002 | US20020024089 Semiconductor element and semiconductor memory device using the same |
| 02/28/2002 | US20020024081 Vertical non-volatile semiconductor memory cell and method for manufaturing the memory cell |
| 02/28/2002 | US20020024078 Insulated gate field effect transistor and method of fabricating the same |
| 02/28/2002 | US20020024073 Semiconductor device and method for fabricating the same |
| 02/28/2002 | US20020024069 Charge transfer device |
| 02/28/2002 | US20020024066 Solid-state image pickup device |
| 02/28/2002 | US20020024065 Single electron device using ultra-thin metal film and method for fabricating the same |
| 02/28/2002 | US20020024064 Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device |
| 02/28/2002 | US20020024061 Bipolar transistor |
| 02/28/2002 | US20020024060 Semiconductor device |
| 02/28/2002 | US20020024057 Semiconductor device and process of fabricating same |
| 02/28/2002 | US20020024056 Field effect transistor |
| 02/28/2002 | US20020024050 Method of making SiC semiconductor devices with W/WC/TaC contacts |
| 02/28/2002 | US20020024048 Semiconductor integrated circuit and fabrication method thereof |
| 02/28/2002 | US20020024047 Insulated gate field effect semiconductor devices and method of manufacturing the same |
| 02/28/2002 | US20020023900 Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication |
| 02/28/2002 | DE10131645A1 Beschleunigungsschalter Inertia switch |
| 02/28/2002 | DE10106406A1 Semiconductor device for integrated circuit protection circuit, has part insulation layer specifically formed in SOI-layer |
| 02/28/2002 | DE10052004C1 Vertical field effect transistor has semiconductor layer incorporating terminal zones contacted at surface of semiconductor body provided with compensation zones of opposite type |
| 02/28/2002 | DE10039441A1 Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren Memory cell, the memory cell array and production method |
| 02/27/2002 | EP1182707A2 IGBT process and device |
| 02/27/2002 | EP1182706A2 IGBT process and device |
| 02/27/2002 | EP1182700A2 Process for the selective manufacturing of a T-shaped gate |
| 02/27/2002 | EP1182699A2 Process for forming a thick dielectric region in a semiconductor substrate |
| 02/27/2002 | EP1181723A1 Double gate mosfet transistor and method for the production thereof |
| 02/27/2002 | EP1181722A1 Low noise and high yield data line structure for imager |
| 02/27/2002 | EP1181720A1 Methods and apparatus for fabricating a multiple modular assembly |
| 02/27/2002 | EP1181719A1 Method and laminate for fabricating an integrated circuit |
| 02/27/2002 | EP1181714A1 Method to produce high density memory cells and small spaces by using nitride spacer |
| 02/27/2002 | EP1181712A2 Low-resistance vdmos semiconductor component |
| 02/27/2002 | EP1181711A2 Method for fabrication of a low resistivity mosfet gate with thick metal silicide on polysilicon |
| 02/27/2002 | EP1181692A1 Device with embedded flash and eeprom memories |
| 02/27/2002 | EP1181401A2 Semi-insulating silicon carbide without vanadium domination |
| 02/27/2002 | EP1040486B1 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices |
| 02/27/2002 | EP0931350B1 Method of fabricating a short channel self-aligned VMOS field effect transistor |
| 02/27/2002 | EP0712535B1 Trenched dmos transistor with channel block at cell trench corners |
| 02/27/2002 | CN1338120A Quantum-size electronic devices and operating conditions thereof |
| 02/27/2002 | CN1337987A Fluorene copolymers and devices made therefrom |
| 02/27/2002 | CN1337905A Thermal transfer element for forming multi-layer devices |
| 02/27/2002 | CN1337747A New type of metal-semiconductor contact for producing schottky diode |
| 02/27/2002 | CN1337744A Semiconductor device |
| 02/27/2002 | CN1337717A Semiconductor storage apparatus |
| 02/27/2002 | CN1079996C High-voltage metal oxide silicon field effect transistor (MOSFET) structure |
| 02/27/2002 | CN1079990C Method for fabricating vertical bipolar transistor |