Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2002
03/26/2002US6360604 Acceleration sensor
03/21/2002WO2002023674A2 Thick film millimeter wave transceiver module
03/21/2002WO2002023638A2 An optically addressed spin-polarised diode
03/21/2002WO2002023624A2 Field effect transistor and method of fabrication
03/21/2002WO2002023615A1 Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layer
03/21/2002WO2002023614A1 Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster tool
03/21/2002WO2002023605A1 Dry isotropic removal of inorganic anti-reflective coating after poly gate etching
03/21/2002WO2001091172A3 A semiconductor device and a method for forming patterns
03/21/2002WO2001086727A3 Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors
03/21/2002WO2001071849A3 Reconfigurable antenna
03/21/2002WO2001069607A3 Memory cell, method of formation, and operation
03/21/2002WO2001057916A3 Bipolar transistor
03/21/2002US20020035412 Method and apparatus for controlling the strategy of compounding pharmaceutical admixtures
03/21/2002US20020034869 Container structure for floating gate memory device and method for forming same
03/21/2002US20020034865 Semiconductor device and method of fabricating the same
03/21/2002US20020034863 Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
03/21/2002US20020034853 Providing a doped substrate; patterning an oxide layer to define a channel; depositing a silicon layer to form channel; growing a gate oxide layer adjacent channel; forming a first and a second gate electrodes; forming drain region; deposits
03/21/2002US20020034852 Amorphizing region of monocrystalline silicon carbide wafer to convert a portion to amorphous silicon carbide; removing an effective amount of carbon from amorphous silicon carbide region with an etchant, converting to crystalline silicon
03/21/2002US20020034851 Forming insulator films and conductive films on semiconductor substrate; forming mask film; patterning mask film to form cell mask film in cell transistor forming region, transistor mask film in non-cell transistor forming region; etching
03/21/2002US20020034850 Forming an isolation layer over a semiconductor substrate having a stacked gate region and a diffusion region, forming gate oxide layer over the gate stacked region and first conductive layer over the isolation layer, removing
03/21/2002US20020034849 Self aligned method of forming a semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling, and a memory array made thereby
03/21/2002US20020034847 Forming spaced apart isolation regions on the substrate; forming trenches across active and isolation regions; forming a second layer of insulation material in active regions; filling trenches with a second conductive material
03/21/2002US20020034846 Self aligned method of forming a semiconductor memory array of floating gate memory cells with control gate spacers, and a memory array made thereby
03/21/2002US20020034845 Method of forming polycrystalline semiconductor film
03/21/2002US20020034844 Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby
03/21/2002US20020034842 Poly-silicon thin film transistor having back bias effects and fabrication method thereof
03/21/2002US20020034841 Method for fabricating a part depletion type SOI device preventing a floating body effect
03/21/2002US20020034100 Nonvolatile semiconductor memory device
03/21/2002US20020033918 Liquid crystal display device
03/21/2002US20020033907 Liquid crystal display
03/21/2002US20020033906 Electro-optical device
03/21/2002US20020033905 Liquid crystal display device
03/21/2002US20020033534 Low k dielectric materials with inherent copper ion migration barrier
03/21/2002US20020033520 Semiconductor device
03/21/2002US20020033517 Non-volatile semiconductor memory device
03/21/2002US20020033513 Semiconductor device
03/21/2002US20020033511 Advanced CMOS using super steep retrograde wells
03/21/2002US20020033509 Semiconductor device and manufacturing method of the same
03/21/2002US20020033508 Semiconductor device and method for fabricating the same
03/21/2002US20020033504 Si-MOS high-frequency semiconductor device and the manufacturing method of the same
03/21/2002US20020033503 Electrode resistance improved MOSFET with source and drain regions reduced in size beyond lithography limit and method for making the same
03/21/2002US20020033502 Low voltage flash memory and method for manufacturing same
03/21/2002US20020033501 Nonvolatile semiconductor memory and method of fabricating the same
03/21/2002US20020033499 Nonvolatile memory cell with high programming efficiency
03/21/2002US20020033492 CMOS image sensor having enhanced photosensitivity and method for fabricating the same
03/21/2002US20020033487 Semiconductor device
03/21/2002US20020033485 Thin film transistor, method of producing the transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device
03/21/2002US20020033484 Wiring line assembly for thin film transistor array substrate and a method for fabricating the same
03/21/2002US20020033483 Process for fabricating semiconductor device
03/21/2002US20020033188 Heterostructure thermionic coolers
03/21/2002US20020033129 In situ regrowth and purification of crystalline thin films
03/21/2002US20020033047 External force detecting sensor
03/21/2002DE10129329A1 Fehlersimulationsverfahren und Fehlersimulator für einen Halbleiter-IC Fault simulation method and fault simulator for a semiconductor IC
03/20/2002EP1189287A1 Semiconductor device
03/20/2002EP1189286A1 Semiconductor device
03/20/2002EP1189276A1 Methods of making an integrated circuit having field implants and a high voltage PN junction, and corresponding integrated circuit
03/20/2002EP1189271A2 Wiring boards and mounting of semiconductor devices thereon
03/20/2002EP1189270A2 Semiconductor device
03/20/2002EP1189087A2 A monolithic photonic receiver with self aligned fiber holder suitable for flip chip assembly
03/20/2002EP1188190A1 Pre-equilibrium chemical reaction energy converter
03/20/2002EP1188189A2 Trenched schottky rectifiers
03/20/2002EP1188188A1 Multi-channel mosfet and method for producing the same
03/20/2002EP1188185A1 Semiconductor and manufacturing method for semiconductor
03/20/2002EP1188181A2 Improving mosfet performance by employing an improved method for forming halo implants
03/20/2002EP1188179A2 An improved method for buried anti-reflective coating removal
03/20/2002EP1097480B1 Semi-conductor element with an emitter area and a stop zone in a pre-mounted position thereto
03/20/2002EP0950132A4 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
03/20/2002EP0685125B1 Cross-conduction prevention circuit for power amplifier output stage
03/20/2002EP0665981B1 Process for fabricating layered superlattice materials and electronic devices including same
03/20/2002CN1341231A TFT array substrate, method of manufacture thereof, and LCD with TFT array substrate
03/20/2002CN1340862A Semiconductor device and padding for 'semiconductor on insulator'
03/20/2002CN1340859A 芯片型半导体器件 A chip-type semiconductor device
03/20/2002CN1340847A Technology for manufacturing electronic elements of thin-film transistor display
03/20/2002CN1081422C Image inducer having electronic optical shutter
03/19/2002US6359666 TFT-type LCD and method of making with pixel electrodes and bus lines having two layers
03/19/2002US6359520 Optically powered resonant tunneling device
03/19/2002US6359515 MMIC folded power amplifier
03/19/2002US6359458 Apparatus for detecting a diaphragm failure
03/19/2002US6359333 Wafer-pair having deposited layer sealed chambers
03/19/2002US6359326 Composite transistor incorporating collector-common resistors
03/19/2002US6359321 MIS transistor and method of fabricating the same
03/19/2002US6359320 Thin-film transistor with lightly-doped drain
03/19/2002US6359318 Semiconductor device with DMOS and bi-polar transistors
03/19/2002US6359317 Vertical PNP bipolar transistor and its method of fabrication
03/19/2002US6359312 Semiconductor device with SOI structure
03/19/2002US6359311 Quasi-surrounding gate and a method of fabricating a silicon-on-insulator semiconductor device with the same
03/19/2002US6359310 Shallow doped junctions with a variable profile gradation of dopants
03/19/2002US6359309 Power MOSFET and IGBT with optimized on-resistance and breakdown voltage
03/19/2002US6359308 Cellular trench-gate field-effect transistors
03/19/2002US6359306 Semiconductor device and method of manufacturing thereof
03/19/2002US6359305 Trench-isolated EEPROM flash in segmented bit line page architecture
03/19/2002US6359304 Nonvolatile semiconductor memory and process for fabricating the same
03/19/2002US6359303 Split gate flash memory with virtual ground array structure and method of fabricating the same
03/19/2002US6359298 Capacitively coupled DTMOS on SOI for multiple devices
03/19/2002US6359295 Ferroelectric memory devices including patterned conductive layers
03/19/2002US6359294 Insulator-compound semiconductor interface structure
03/19/2002US6359293 Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
03/19/2002US6358867 Orientation independent oxidation of silicon
03/19/2002US6358864 Silicon oxide and silicon nitride from low pressure chemical vapor deposition; one-reactor process for high throughput of memory devices; noncontaminating and noncracking of wafers
03/19/2002US6358846 Forming semiconductors with barriers