Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2002
02/21/2002DE10104082A1 Halbleiterspeichervorrichtung A semiconductor memory device
02/21/2002DE10038190A1 Semiconductor structure with locally thinned substrate for control of vertically flowing current through semiconductor
02/21/2002DE10038177A1 Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden By means of field-effect-controllable semiconductor switching element having two control electrodes
02/21/2002DE10038150A1 Semiconducting component controled by field effect has recombination zone formed in channel zone, Schottky barrier between first connection electrode and second connection zone
02/21/2002DE10038099A1 Mikromechanisches Bauelement Micromechanical component
02/21/2002DE10037821A1 Baugruppe, insbesondere Wafer-Baugruppe Assembly, in particular wafer assembly
02/21/2002CA2419930A1 Directed assembly of nanometer-scale molecular devices
02/20/2002EP1180799A2 Semiconductor memory device and method of manufacturing the same
02/20/2002EP1180795A2 Method for making a first electrode and a second electrode, electronic component and electronic memory element
02/20/2002EP1180716A2 Thin film semiconductor device and liquid crystal display unit, and fabrication methods thereof
02/20/2002EP0950265B1 Uniform ballast resistance for a thermally balanced radio frequency power transistor
02/20/2002CN1337068A Ferroelectric memory with perroelectric thin film and method of fabrication
02/20/2002CN1337063A Functional device and method of mfg. the same
02/20/2002CN1336692A Film transistor and its mfg. method, film transistor array substrate, liquid crystal display device and electroluminhescent display
02/20/2002CN1336691A Flashing storage unit having non-contact bit line, and its mfg. method
02/20/2002CN1336689A Circuit structure of small inductor
02/20/2002CN1336684A Semiconductor substrate, field effect transistor, and method for forming silicon germanide layer
02/20/2002CN1079581C Exposing apparatus and method for forming thin film transistor
02/19/2002US6348735 Electrode for semiconductor device and method for manufacturing same
02/19/2002US6348724 Semiconductor device with ESD protection
02/19/2002US6348723 Semiconductor device with a dummy wire positioned to prevent charging/discharging of the parasitic capacitance of a signal wire
02/19/2002US6348720 Solid state image sensing device and method of manufacturing the same
02/19/2002US6348719 Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip
02/19/2002US6348716 Horizontal MOS gate type semiconductor device including zener diode and manufacturing method thereof
02/19/2002US6348714 Soi structure with a body contact
02/19/2002US6348713 Method for fabricating semiconductor device
02/19/2002US6348712 High density trench-gated power MOSFET
02/19/2002US6348711 NROM cell with self-aligned programming and erasure areas
02/19/2002US6348710 Non-volatile semiconductor memory device
02/19/2002US6348705 Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
02/19/2002US6348704 Semiconductor device having successful schottky characteristics
02/19/2002US6348702 Image display system
02/19/2002US6348698 A iii-v semiconductor alloy layered structure as an active layer including n and at least one other group-v element, and at least one group-iii element; used for red wavelength laser diodes having excellent temperature characteristics
02/19/2002US6348420 Situ dielectric stacks
02/19/2002US6348396 Semiconductor device and production thereof
02/19/2002US6348390 Method for fabricating MOSFETS with a recessed self-aligned silicide contact and extended source/drain junctions
02/19/2002US6348388 Process for fabricating a uniform gate oxide of a vertical transistor
02/19/2002US6348387 Field effect transistor with electrically induced drain and source extensions
02/19/2002US6348386 Method for making a hafnium-based insulating film
02/19/2002US6348385 Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant
02/19/2002US6348380 Use of dilute steam ambient for improvement of flash devices
02/19/2002US6348378 Method of making a non-volatile semiconductor device with reduced program disturbance
02/19/2002US6348373 Method for improving electrical properties of high dielectric constant films
02/19/2002US6348369 Method for manufacturing semiconductor devices
02/19/2002US6348368 Introducing catalytic and gettering elements with a single mask when manufacturing a thin film semiconductor device
02/19/2002US6348367 Method for manufacturing a semiconductor device
02/19/2002US6348361 CMOS image sensor having enhanced photosensitivity and method for fabricating the same
02/19/2002US6348359 Cathode contact structures in organic electroluminescent devices
02/19/2002CA2130806C Semiconductor device
02/14/2002WO2002013342A2 Silicon wafer with embedded optoelectronic material for monolithic oeic
02/14/2002WO2002013277A1 Method of producing tft array
02/14/2002WO2002013276A1 A memory device and a memory array
02/14/2002WO2002013275A1 Electronic component and method for producing an electronic component
02/14/2002WO2002013274A1 An arrangement in a power mos transistor
02/14/2002WO2002013273A1 Indium gallium nitride channel high electron mobility transistors, and method of making the same
02/14/2002WO2002013272A2 Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes
02/14/2002WO2002013268A2 Module, especially a wafer module
02/14/2002WO2002013262A2 Gate technology for strained surface channel and strained buried channel mosfet devices
02/14/2002WO2002013259A2 Method and apparatus for measuring parameters of an electronic device
02/14/2002WO2002013257A2 Semiconductor switch element comprising two control electrodes, which can be controlled by means of field effect
02/14/2002WO2002013235A2 Power mos device with asymmetrical channel structure
02/14/2002WO2002013041A2 Automatic check for cyclic operating conditions for soi circuit simulation
02/14/2002WO2002012906A1 Micromechanical component
02/14/2002WO2002012598A1 Epitaxial wafer apparatus
02/14/2002WO2002012115A2 Methods for reducing the curvature in boron-doped silicon micromachined structures
02/14/2002WO2001081896B1 An ultra-fast nucleic acid sequencing device and a method for making and using the same
02/14/2002WO2001066832A3 Graded thin films
02/14/2002WO2001065606A3 Field effect transistor configuration having a high latch-up strength and method for the production thereof
02/14/2002WO2001043174A3 Fabrication of gallium nitride layers on textured silicon substrates
02/14/2002WO2001003208A9 Nanoscopic wire-based devices, arrays, and methods of their manufacture
02/14/2002WO2000034985A3 Method for structuring a metalliferous layer
02/14/2002US20020019711 Anticorrosive vacuum sensor
02/14/2002US20020019149 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
02/14/2002US20020019146 Semiconductor device and production thereof
02/14/2002US20020019144 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
02/14/2002US20020019120 Methods of forming semiconductor structures
02/14/2002US20020019119 HIgh temperature metal deposition for reducing lateral silicidation
02/14/2002US20020019117 Forming silicon layer, doping, and carbonization after formation of doped silicon substance; use as semiconductor device
02/14/2002US20020019115 Power rectifier device and method of fabricating power rectifier devices
02/14/2002US20020019111 Semiconductor with high-voltage components and low-voltage components on a shared die
02/14/2002US20020019105 SOI substrate and semiconductor device
02/14/2002US20020019104 Method of manufacturing semiconductor device and semiconductor integrated circuit device
02/14/2002US20020019102 Process to fabricate a novel source-drain extension
02/14/2002US20020019101 Semiconductor device and method for fabricating the same
02/14/2002US20020019100 Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulation
02/14/2002US20020019099 Super self-aligned trench-gate dmos with reduced on-resistance
02/14/2002US20020019098 Having a floating gate and a control gate laterally spaced apart, and both insulated from a substrate
02/14/2002US20020019096 Silicon on insulator transistor structure for imbedded DRAM
02/14/2002US20020019085 Method of forming a gate oxide layer with an improved ability to resist the process damage
02/14/2002US20020019084 Process for forming power MOSFET device in float zone, non-epitaxial silicon
02/14/2002US20020019081 Comprises depositing on the substrate at least one layer of semiconductor material, wherein the substrate comprises a polyphenylene polyimide, derived from biphenyl-3,3',4,4'-tetracarboxylic acid and 1,6-hexanediamine
02/14/2002US20020019070 Manufacturing process of integrated semiconductor light sensor device
02/14/2002US20020019069 Optical element and method of manufacturing the same, and electronic instrument
02/14/2002US20020019063 Capable of suppressing the electric charge in a semiconductor layer of a silicon on insulator(SOI) substrate at time of ion implantation, preventing gate oxide or buried oxide(BOX) layer from damage
02/14/2002US20020018904 Ferroelectric
02/14/2002US20020018862 Method of annealing large area glass substrates
02/14/2002US20020018373 Single electron resistor memory device and method
02/14/2002US20020018353 Low-inductance circuit arrangement
02/14/2002US20020018328 Protection circuit of field effect transistor and semiconductor device
02/14/2002US20020018152 Liquid crystal display device