Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/02/2002 | US6365969 Ohmic electrode, method of manufacturing the same and semiconductor device |
04/02/2002 | US6365957 Lateral bipolar transistor |
04/02/2002 | US6365947 Semiconductor device and method of increasing channel length to eliminate short channel effects of corner devices |
04/02/2002 | US6365946 Integrated-circuit isolation structure and method for forming the same |
04/02/2002 | US6365942 MOS-gated power device with doped polysilicon body and process for forming same |
04/02/2002 | US6365939 Semiconductor protection device |
04/02/2002 | US6365936 Ultra-high resolution liquid crystal display on silicon-on-sapphire |
04/02/2002 | US6365935 TFT having hydrogen containing buffer and substrate regions |
04/02/2002 | US6365934 Method and apparatus for elimination of parasitic bipolar action in complementary oxide semiconductor (CMOS) silicon on insulator (SOI) circuits |
04/02/2002 | US6365933 Semiconductor device and method of manufacturing the same |
04/02/2002 | US6365932 Power MOS transistor |
04/02/2002 | US6365931 Gate insulating structure for power devices, and related manufacturing process |
04/02/2002 | US6365930 Edge termination of semiconductor devices for high voltages with resistive voltage divider |
04/02/2002 | US6365929 Scalable tunnel oxide window with no isolation edges |
04/02/2002 | US6365925 Semiconductor device |
04/02/2002 | US6365924 Dual direction over-voltage and over-current IC protection device and its cell structure |
04/02/2002 | US6365919 Silicon carbide junction field effect transistor |
04/02/2002 | US6365916 High aperture LCD with insulating color filters overlapping bus lines on active substrate |
04/02/2002 | US6365915 Thin film transistor |
04/02/2002 | US6365525 Method of fabricating a semiconductor insulation layer |
04/02/2002 | US6365513 Method of making a semiconductor device including testing before thinning the semiconductor substrate |
04/02/2002 | US6365512 Method and apparatus for a direct buried strap for same level contact interconnections for semiconductor devices |
04/02/2002 | US6365497 Method for making an I - shaped access transistor having a silicide envelop |
04/02/2002 | US6365494 Method for producing an ohmic contact |
04/02/2002 | US6365493 Method for antimony and boron doping of spherical semiconductors |
04/02/2002 | US6365491 Method for forming a uniform network of semiconductor islands on an insulating substrate |
04/02/2002 | US6365478 Solid state electronic device fabrication using crystalline defect control |
04/02/2002 | US6365477 Method for producing a heterobiopolar transistor |
04/02/2002 | US6365475 Method of forming a MOS transistor |
04/02/2002 | US6365473 Method of manufacturing a transistor in a semiconductor device |
04/02/2002 | US6365472 Semiconductor device and method of manufacturing the same |
04/02/2002 | US6365470 Method for manufacturing self-matching transistor |
04/02/2002 | US6365468 Method for forming doped p-type gate with anti-reflection layer |
04/02/2002 | US6365467 Forming oxynitride layer on a semiconductor substrate and a tantalum oxide over oxynitride layer; forming oxide layer; thermal-treatment under nitrogen oxide gas |
04/02/2002 | US6365465 Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques |
04/02/2002 | US6365462 Methods of forming power semiconductor devices having tapered trench-based insulating regions therein |
04/02/2002 | US6365459 Method for making flash memory cell having reentrant angle floating gate |
04/02/2002 | US6365458 Semiconductor memory device and method of manufacturing the same |
04/02/2002 | US6365457 Method for manufacturing nonvolatile memory device using self-aligned source process |
04/02/2002 | US6365451 Transistor and method |
04/02/2002 | US6365448 Structure and method for gated lateral bipolar transistors |
04/02/2002 | US6365445 Field effect transistor formed in SOI technology with semiconductor material having multiple thicknesses |
04/02/2002 | US6365444 Process for forming polycrystalline thin film transistor liquid crystal display |
04/02/2002 | US6365056 Method for producing a suspended element in a micro-machined structure |
04/02/2002 | US6365055 Process for producing a sensor membrane substrate |
04/02/2002 | CA2241676C Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same |
03/28/2002 | WO2002025810A2 Mmic folded power amplifier |
03/28/2002 | WO2002025740A1 High-voltage diode and method for the production thereof |
03/28/2002 | WO2002025739A1 Thin-film transistor, and liquid crystal display and electroluminescence display which comprise it |
03/28/2002 | WO2002025738A1 Controllable semiconductor component |
03/28/2002 | WO2002025736A1 A high voltage semiconductor |
03/28/2002 | WO2002025735A2 Diode with variable width metal stripes for improved protection against electrostatic discharge (esd) current failure |
03/28/2002 | WO2002025733A2 Non-volatile memory cell array and methods of forming |
03/28/2002 | WO2002025725A2 Semiconductor device and process for forming the same |
03/28/2002 | WO2002025719A2 Reduced capacitance scaled hbt using a separate base post layer |
03/28/2002 | WO2002025705A2 Quantum dot devices |
03/28/2002 | WO2002025701A2 Body-tied silicon on insulator semiconductor device structure and method therefor |
03/28/2002 | WO2002025700A2 Semiconductor device and method of forming a semiconductor device |
03/28/2002 | WO2002025699A2 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix |
03/28/2002 | WO2002025366A2 Cdse-based active matrix flat panel displays |
03/28/2002 | WO2002024572A1 Hybrid single-wall carbon nanotube |
03/28/2002 | WO2002015283A3 Metal sulfide-oxide semiconductor transistor devices |
03/28/2002 | WO2001099177A3 Trench mosfet with double-diffused body profile |
03/28/2002 | WO2001088953A3 A quantum domain relay |
03/28/2002 | WO2001071815A3 High voltage semiconductor device having a field plate arrangement |
03/28/2002 | WO2001059847A3 Insulated gate semiconductor device having field shaping regions |
03/28/2002 | US20020038402 Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same |
03/28/2002 | US20020037654 Laser annealing glass dielectric |
03/28/2002 | US20020037640 Method of fabricating EEPROM having tunnel window area |
03/28/2002 | US20020037639 Method for farbricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type |
03/28/2002 | US20020037636 Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation |
03/28/2002 | US20020037632 Semiconductor device manufacturing method |
03/28/2002 | US20020037621 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same |
03/28/2002 | US20020037620 Semiconductor device and method for fabricating the same |
03/28/2002 | US20020037619 Semiconductor device and method of producing the same |
03/28/2002 | US20020037618 Semiconductor device and method of manufacturing the same |
03/28/2002 | US20020037615 With a gate insulation film of hafnium oxide formed as a high dielectric constant insulator over the entire structure |
03/28/2002 | US20020037613 Method of forming field effect transistors and related field effect transistor constructions |
03/28/2002 | US20020037612 Semiconductor device and method for fabricating the same |
03/28/2002 | US20020037610 MOS structure and method for fabricating the structure |
03/28/2002 | US20020037608 Method of manufacturing SOI element having body contact |
03/28/2002 | US20020037607 Body-to-substrate contact structure for SOI device and method for fabricating same |
03/28/2002 | US20020037601 Production method of a micromachine |
03/28/2002 | US20020036927 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device |
03/28/2002 | US20020036818 Electro-optical apparatus, electronic device, substrate for use in an electro-optical apparatus, method of producing a substrate for use in an electro-optical apparatus, and light shielding film |
03/28/2002 | US20020036542 Mmic folded power amplifier |
03/28/2002 | US20020036541 Mmic folded power amplifier |
03/28/2002 | US20020036462 Display apparatus |
03/28/2002 | US20020036353 Semiconductor device having a metal silicide layer and method for manufacturing the same |
03/28/2002 | US20020036349 Semiconductor device and manufacturing |
03/28/2002 | US20020036339 Semiconductor device |
03/28/2002 | US20020036330 Semiconductor device with SOI structure and method of manufacturing the same |
03/28/2002 | US20020036328 Offset drain fermi-threshold field effect transistors |
03/28/2002 | US20020036325 RF power transistor |
03/28/2002 | US20020036323 Semiconductor device and method of manufacturing the same |
03/28/2002 | US20020036321 Semiconductor device and maufacturing method thereof |
03/28/2002 | US20020036320 Semiconductor device having low parasitic resistance and small junction leakage characteristic and method of manufacturing the same |
03/28/2002 | US20020036319 Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes and methods of forming same |
03/28/2002 | US20020036318 Reversed source-drain mosgated device |
03/28/2002 | US20020036317 Nonvolatile semiconductor memory device having element isolating region of trench type and method of manufacturing the same |