Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/08/2002 | US6337259 Method for fabricating semiconductor device with high quality crystalline silicon film |
01/08/2002 | US6337257 Semiconductor device and method of manufacturing the same |
01/08/2002 | US6337252 Semiconductor device manufacturing method |
01/08/2002 | US6337251 Method of manufacturing semiconductor device with no parasitic barrier |
01/08/2002 | US6337249 Semiconductor device and fabrication process thereof |
01/08/2002 | US6337248 Process for manufacturing semiconductor devices |
01/08/2002 | US6337247 Method of producing a vertical MOS transistor |
01/08/2002 | US6337238 Semiconductor device having a dielectric film and a fabrication process thereof |
01/08/2002 | US6337236 Forming insulating film over substrate, forming semiconductor film on insulating film, forming a gate insulating film over semiconductor film after heating, forming gate electrode; improved carrier mobility |
01/08/2002 | US6337235 Semiconductor device and manufacturing method thereof |
01/08/2002 | US6337234 Method of fabricating a buried bus coplanar thin film transistor |
01/08/2002 | US6337233 Method of manufacturing a polycrystalline silicon layer |
01/08/2002 | US6337232 Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region |
01/08/2002 | US6337231 Method for producing semiconductor device |
01/08/2002 | US6337230 Semiconductor device and manufacturing method thereof |
01/08/2002 | US6337229 Method of making crystal silicon semiconductor and thin film transistor |
01/08/2002 | US6337227 Method of fabrication of stacked semiconductor devices |
01/08/2002 | US6337216 Methods of forming ferroelectric memory cells |
01/08/2002 | US6336658 Acceleration switch and the manufacturing method |
01/08/2002 | CA2007373C Ink jet recording sheet |
01/03/2002 | WO2002001706A1 Electronic microcomponent, sensor and actuator incorporating same |
01/03/2002 | WO2002001646A1 High-voltage diode |
01/03/2002 | WO2002001645A1 Mosfet and method for fabrication of mosfet with buried gate |
01/03/2002 | WO2002001644A2 Power mosfet and methods of forming and operating the same |
01/03/2002 | WO2002001643A2 Soft recovery power diode and related method |
01/03/2002 | WO2002001641A1 Semiconductor device |
01/03/2002 | WO2002001623A1 High frequency transistor device with antimony implantation and fabrication method thereof |
01/03/2002 | WO2002001622A2 Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
01/03/2002 | WO2002001615A2 Crystal structure control of polycrystalline silicon in a single wafer chamber |
01/03/2002 | WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
01/03/2002 | WO2002001603A2 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same |
01/03/2002 | WO2002001602A2 Method of manufacturing a charge-coupled image sensor |
01/03/2002 | WO2002001286A1 Tft array substrate, and liquid crystal display device using the same |
01/03/2002 | WO2001092428A8 Heterostructure with rear-face donor doping |
01/03/2002 | WO2001071810A3 High voltage solid state device termination |
01/03/2002 | WO2001071793A3 Method for forming high quality multiple thickness oxide layers by using high temperature descum |
01/03/2002 | WO2001069684A3 Field-effect semiconductor devices |
01/03/2002 | WO2001052306A3 Trench insulated-gate bipolar transistor with improved safe-operating-area |
01/03/2002 | WO2001050504A3 An improved method for buried anti-reflective coating removal |
01/03/2002 | US20020001960 Material removal method for forming a structure |
01/03/2002 | US20020001959 Method of manufacturing semiconductor device, and semiconductor device manufactured thereby |
01/03/2002 | US20020001948 Method of manufacturing a semiconductor device |
01/03/2002 | US20020001935 Method of forming gate electrode in semiconductor device |
01/03/2002 | US20020001934 Method for manufacturing gate in semiconductor device |
01/03/2002 | US20020001933 MOSFET and fabrication method thereof |
01/03/2002 | US20020001932 Method for forming a gate for semiconductor devices |
01/03/2002 | US20020001927 Semiconductor device manufacturing method |
01/03/2002 | US20020001926 Semiconductor device and method for fabricating the same |
01/03/2002 | US20020001921 Process for production of SOI substrate and process for production of semiconductor device |
01/03/2002 | US20020001914 Forming a gate with a uniform elevation irrespective of a wafer region, a chemical-mechanical polishing using a typical slurry for oxide film containing abrasives of silica, cerium oxide, alumina or zirconia, and hydrogen peroxide |
01/03/2002 | US20020001911 Method for fabricating avalanche photodiode |
01/03/2002 | US20020001909 Process for fabricating MOS semiconductor transistor |
01/03/2002 | US20020001908 To reduce the diffusion of fluorine atoms during the anneal, forming a diffusion barrier layer of titanium nitride doped with boron |
01/03/2002 | US20020001907 Method of forming an EPI - channel in a semiconductor device |
01/03/2002 | US20020001906 Forming a gate insulating film on a semiconductor substrate, covering the insulating film with titanium alumium nitride film, forming a metal layer, patterning the insulating layer to expose a part of metal layer, etching exposed metal layer |
01/03/2002 | US20020001905 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof |
01/03/2002 | US20020001903 Electrically programmable memory cell |
01/03/2002 | US20020001899 Semiconductor integrated circuit device and a method of manufacturing the same |
01/03/2002 | US20020001898 Method of manufacturing a flash memory cell |
01/03/2002 | US20020001897 Methods of forming gated semiconductor assemblies |
01/03/2002 | US20020001891 Method for fabricating MOSFET device |
01/03/2002 | US20020001890 Method for forming semiconductor device having epitaxial channel layer using laser treatment |
01/03/2002 | US20020001888 Method of manufacturing a semiconductor device |
01/03/2002 | US20020001887 Thin film transistor and manufacturing method therefor |
01/03/2002 | US20020001886 Method of manufacturing thin film transistor |
01/03/2002 | US20020001884 Methods of forming thin film transistors |
01/03/2002 | US20020001876 Forming a conductive layer, having conductive lines with gaps, over a semiconductor substrate, depositing afluorosilcated glass layer, by high density plasma chemical vapor depositon over patterned conductive layer, filling gap |
01/03/2002 | US20020001868 Liquid crystal display and fabricating method thereof |
01/03/2002 | US20020001867 Method of fabricating fringe field switching mode liquid crystal display |
01/03/2002 | US20020001777 Multilaye rlaminate; dielectric substrate, patterned photoresist mask |
01/03/2002 | US20020001230 Non-volatile semiconductor memory including memory cells having different charge exhange capability |
01/03/2002 | US20020001048 Method of fabricating liquid crystal display with a high aperture ratio |
01/03/2002 | US20020000669 Device comprising thermally stable, low dielectric constant material |
01/03/2002 | US20020000656 Ball grid array package and a packaging process for same |
01/03/2002 | US20020000643 Devices related to electrode pads for p-type group iii nitride compound semiconductors |
01/03/2002 | US20020000641 Microwave array transistor for low-noise and high-power applications |
01/03/2002 | US20020000640 Structure for a semiconductor device |
01/03/2002 | US20020000635 Improved metal oxide semiconductor device having contoured channel region and elevated source and drain regions |
01/03/2002 | US20020000633 Semiconductor device including misfet having post-oxide films having at least two kinds of thickness and method of manufacturing the same |
01/03/2002 | US20020000629 MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness |
01/03/2002 | US20020000628 Semiconductor device and production method thereof |
01/03/2002 | US20020000627 Method of forming an integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure |
01/03/2002 | US20020000623 Semiconductor device and method for fabricating the same using damascene process |
01/03/2002 | US20020000622 Semiconductor device having reduced sheet resistance of source/drain regions |
01/03/2002 | US20020000621 Enhancements to polysilicon gate |
01/03/2002 | US20020000619 Thin film field effect transistor |
01/03/2002 | US20020000618 Semiconductor device and method for fabricating the same |
01/03/2002 | US20020000616 Electronic device and a method for making the same |
01/03/2002 | US20020000614 Coplanar gate-source-drain Poly-TFT and method for fabricating the same |
01/03/2002 | US20020000612 Power-mos transistor |
01/03/2002 | US20020000611 Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof |
01/03/2002 | US20020000609 Semiconductor device |
01/03/2002 | US20020000608 Vertical MOS transistor and a method of manufacturing the same |
01/03/2002 | US20020000607 Semiconductor power component with a reduced parasitic bipolar transistor |
01/03/2002 | US20020000606 NROM cell with self-aligned programming and erasure areas |
01/03/2002 | US20020000605 Method of fabricating high-coupling ratio split gate flash memory cell array |
01/03/2002 | US20020000604 Method to fabricate a floating gate with a sloping sidewall for a flash memory |
01/03/2002 | US20020000603 Non-volatile semiconductor memory device and method for producing the same |
01/03/2002 | US20020000602 V-shaped flash memory structure |
01/03/2002 | US20020000601 Semiconductor device having self-aligned contact and landing pad structure and method of forming same |