| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/11/2002 | US20020042167 Thin film transistor array substrate for liquid crystal display device and method of manufacturing the same |
| 04/11/2002 | US20020042165 Process for producing oxide thin films |
| 04/11/2002 | US20020042151 DNA-based integrated circuit |
| 04/11/2002 | US20020041530 Semiconductor memory device having driver circuit which supplies temporary accelerated charge |
| 04/11/2002 | US20020041526 Nonvolatile semiconductor memory device, process of manufacturing the same and method of operating the same |
| 04/11/2002 | US20020041519 Single electron resistor memory device and method |
| 04/11/2002 | US20020041355 Liquid crystal electrooptical device |
| 04/11/2002 | US20020041131 Ceramic diaphragm structure and method for producing the same |
| 04/11/2002 | US20020041030 Semiconductor device for suppressing detachment of conductive layer and method for manufacturing the semiconductor device |
| 04/11/2002 | US20020041008 Bipolar junction transistor |
| 04/11/2002 | US20020041007 Multifinger silicon controlled rectifier structure for electrostatic discharge protection |
| 04/11/2002 | US20020041006 Multilayer electronic device |
| 04/11/2002 | US20020041005 Semiconductor device having capacitance element and method of producing the same |
| 04/11/2002 | US20020041003 Semiconductor device and method of forming a semiconductor device |
| 04/11/2002 | US20020041002 Semiconductor raised source-drain structure |
| 04/11/2002 | US20020041001 Semiconductor raised source-drain structure |
| 04/11/2002 | US20020041000 Semiconductor device and method of manufacturing the same |
| 04/11/2002 | US20020040999 Semiconductor device and method for fabricating the same |
| 04/11/2002 | US20020040998 SOI semiconductor device capable of preventing floating body effect |
| 04/11/2002 | US20020040997 Semiconductor device |
| 04/11/2002 | US20020040996 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode |
| 04/11/2002 | US20020040995 Lateral DMOS transistor |
| 04/11/2002 | US20020040994 Semiconductor device having trenches and process for same |
| 04/11/2002 | US20020040993 Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions |
| 04/11/2002 | US20020040992 Nonvolatile semiconductor memory |
| 04/11/2002 | US20020040990 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system |
| 04/11/2002 | US20020040988 Semiconductor device and method for the manufacture thereof |
| 04/11/2002 | US20020040987 Semiconductor device |
| 04/11/2002 | US20020040983 Silicon wafer with embedded optoelectronic material for monolithic OEIC |
| 04/11/2002 | US20020040981 Method of manufacturing semiconductor device over glass substrate having heat resistance |
| 04/11/2002 | US20020040847 Method of forming a dielectric film |
| 04/11/2002 | US20020040709 Vehicle-mounted ignitor |
| 04/11/2002 | DE10048857A1 Semiconductor chip with controlled emitter efficiency provided by a conductive connection between the emitter layer and a transition layer |
| 04/11/2002 | DE10047500A1 Micromechanical membrane used in the production of micromechanical pressure sensors comprises a partially n-doped p-substrate on its surface, and n-epitaxial layers which are p-doped in the membrane region and are arranged on the substrate |
| 04/11/2002 | CA2457919A1 Silicon carbide metal-oxide semiconductor field effect transistors and fabicating methods therefor |
| 04/10/2002 | EP1195986A2 Charge transfer device, CCD image sensor, and CCD image pickup system |
| 04/10/2002 | EP1195784A1 Laminated body, capacitor, electronic part, and method and device for manufacturing the laminated body, capacitor, and electronic part |
| 04/10/2002 | EP1195783A2 Multilayer electronic device |
| 04/10/2002 | EP1195352A1 A method for producing micromachined devices and devices obtained thereof |
| 04/10/2002 | EP1194960A1 Nanoscopic wire-based devices, arrays, and methods of their manufacture |
| 04/10/2002 | EP1194957A1 A method in the fabrication of organic thin-film semiconducting devices |
| 04/10/2002 | EP0780023B1 Process for self-aligned source for high density memory |
| 04/10/2002 | EP0753193B1 Improvements in an apparatus and method of use of radiofrequency identification tags |
| 04/10/2002 | EP0737366B1 Field effect device |
| 04/10/2002 | CN1344436A Methods and appts. for bipolar elimination in silicon-on-insulator (sol) domino circuits |
| 04/10/2002 | CN1344426A Improved integrated oscillators and tuning circuits |
| 04/10/2002 | CN1344033A 异质结场效应晶体管 Heterojunction field effect transistor |
| 04/10/2002 | CN1344032A 半导体器件 Semiconductor devices |
| 04/10/2002 | CN1344031A Bipolar transistor, semiconductor luminous component and semiconductor component |
| 04/10/2002 | CN1344030A Light detector with built-in circuit and its prodn. method |
| 04/10/2002 | CN1343905A Electrooptical device, electronic device, substrate for electrooptical device, method for mfg. substrate for electrooptical device and shading membrane |
| 04/10/2002 | CN1343900A 液晶显示器 LCD Monitor |
| 04/10/2002 | CN1082725C 半导体集成电路器件 The semiconductor integrated circuit device |
| 04/10/2002 | CN1082718C Semiconductor device and method for mfg. same |
| 04/09/2002 | US6370081 Nonvolatile semiconductor memory |
| 04/09/2002 | US6370064 Method of operating split gate-typed non-volatile memory cell and semiconductor memory device having the cells |
| 04/09/2002 | US6370062 NAND-type flash memory device and method of operating the same |
| 04/09/2002 | US6370059 Nonvolatile semiconductor memory |
| 04/09/2002 | US6369663 NRD guide Gunn oscillator |
| 04/09/2002 | US6369646 Leakage current compensation circuit |
| 04/09/2002 | US6369438 Semiconductor device and method for manufacturing the same |
| 04/09/2002 | US6369435 Semiconductor component |
| 04/09/2002 | US6369434 Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors |
| 04/09/2002 | US6369433 High voltage transistor with low body effect and low leakage |
| 04/09/2002 | US6369426 Transistor with integrated photodetector for conductivity modulation |
| 04/09/2002 | US6369425 High-density power device |
| 04/09/2002 | US6369424 Field effect transistor having high breakdown withstand capacity |
| 04/09/2002 | US6369423 Semiconductor device with a thin gate stack having a plurality of insulating layers |
| 04/09/2002 | US6369422 Eeprom cell with asymmetric thin window |
| 04/09/2002 | US6369421 EEPROM having stacked dielectric to increase programming speed |
| 04/09/2002 | US6369420 Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby |
| 04/09/2002 | US6369414 Charge coupled device having charge accumulating layer free from tow-dimensional effect under miniaturization and process for fabrication thereof |
| 04/09/2002 | US6369412 Semiconductor integrated device comprising a plurality of basic cells |
| 04/09/2002 | US6369410 Semiconductor device and method of manufacturing the semiconductor device |
| 04/09/2002 | US6369408 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same |
| 04/09/2002 | US6369405 Silicon quantum wires |
| 04/09/2002 | US6369404 A single electron is bound to the donor, and the donor atom is weakly coupled to the at least one electron in the substrate. the gates are biased so that the at least one electron will move to the donor |
| 04/09/2002 | US6368984 Insulating film and method of forming the same |
| 04/09/2002 | US6368976 Method for manufacturing a semiconductor device having film thickness difference between a control gate and a floating gate |
| 04/09/2002 | US6368960 Double sidewall raised silicided source/drain CMOS transistor |
| 04/09/2002 | US6368947 Process utilizing a cap layer optimized to reduce gate line over-melt |
| 04/09/2002 | US6368946 Manufacture of a semiconductor device with an epitaxial semiconductor zone |
| 04/09/2002 | US6368936 Method for forming a semiconductor integrated circuit |
| 04/09/2002 | US6368932 Method for producing diodes |
| 04/09/2002 | US6368930 Self aligned symmetric process and device |
| 04/09/2002 | US6368929 Method of manufacturing a semiconductor component and semiconductor component thereof |
| 04/09/2002 | US6368928 Method of forming an indium retrograde profile via use of a low temperature anneal procedure to reduce NMOS short channel effects |
| 04/09/2002 | US6368927 Method of manufacturing transistor having elevated source and drain regions |
| 04/09/2002 | US6368926 Method of forming a semiconductor device with source/drain regions having a deep vertical junction |
| 04/09/2002 | US6368925 Adjusting the temperature and pressure of h2 bake process to prevent the etching of a separation oxide at an interfae of an active region and a field region thereby ensuring theat an epitaxial-channel is formed having uniform shape |
| 04/09/2002 | US6368921 Manufacture of trench-gate semiconductor devices |
| 04/09/2002 | US6368920 Trench MOS gate device |
| 04/09/2002 | US6368919 Method and composite for decreasing charge leakage |
| 04/09/2002 | US6368918 Method of fabricating Nan embedded flash EEPROM with a tunnel oxide grown on a textured substrate |
| 04/09/2002 | US6368916 Method for fabricating nonvolatile semiconductor memory device |
| 04/09/2002 | US6368915 Method of manufacturing a semiconductor device |
| 04/09/2002 | US6368914 Well structure in non-volatile memory device and method for fabricating the same |
| 04/09/2002 | US6368911 Method for manufacturing a buried gate |
| 04/09/2002 | US6368909 Methods of fabricating integrated circuit ferroelectric capacitors including tensile stress applying layers on the upper electrode thereof |
| 04/09/2002 | US6368907 Method of fabricating semiconductor device |