Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2002
01/17/2002US20020006710 Semiconductor laser device
01/17/2002US20020006707 Angled implant to improve high current operation of bipolar transistors
01/17/2002US20020006706 Semiconductor device and method of manufacturing seciconductor device
01/17/2002US20020006705 Forming impurity zones
01/17/2002US20020006704 Process for forming gate oxide layer
01/17/2002US20020006703 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region
01/17/2002US20020006702 Method and composite for decreasing charge leakage
01/17/2002US20020006701 Method of manufacturing semiconductor device having a thin insulating film
01/17/2002US20020006693 Semiconductor device and the manufacturing method thereof
01/17/2002US20020006690 Semiconductor device and method of fabricating the same
01/17/2002US20020006689 Thin film semiconductor device and method for producing the same
01/17/2002US20020006682 Micromechanical component and appropriate manufacturing method
01/17/2002US20020006681 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device
01/17/2002US20020005905 Semiconductor device and manufacturing method thereof
01/17/2002US20020005733 Switching circuit
01/17/2002US20020005581 Semiconductor device having an insulated gate and a fabrication process thereof
01/17/2002US20020005562 Semiconductor power integrated circuit and method for fabricating the same
01/17/2002US20020005561 Non-volatile semiconductor memory device and manufacturing method thereof
01/17/2002US20020005559 Lateral semiconductor device
01/17/2002US20020005558 Semiconductor diode having a rectifying junction and method of manufacturing same
01/17/2002US20020005556 Silicate gate dielectric
01/17/2002US20020005555 Semiconductor device comprising a silicon body with bipolar and mos transistors
01/17/2002US20020005553 Semiconductor integrated circuit device and a method of manufacturing the same
01/17/2002US20020005552 Semiconductor device having different field oxide sizes
01/17/2002US20020005550 Semiconductor device and manufacturing method of the same
01/17/2002US20020005549 Power semiconductor device and method of manufacturing the same
01/17/2002US20020005548 Trench-gate power semiconductor device preventing latch-up and method for fabricating the same
01/17/2002US20020005546 Non-volatile semiconductor memory and manufacturing method thereof
01/17/2002US20020005545 Semiconductor device
01/17/2002US20020005544 Semiconductor memory and semiconductor device
01/17/2002US20020005543 Low voltage single poly deep sub-micron flash eeprom
01/17/2002US20020005540 Thin film transistor and fabricating method thereof
01/17/2002US20020005537 DRAM with vertical transistors and deep trench capacitors
01/17/2002US20020005532 Ferroelectric memory and method for manufacturing same
01/17/2002US20020005530 Field effect transistor, especially for use as a sensor element or acceleration sensor, and method for its manufacture
01/17/2002US20020005529 Semiconductor device and method for manufacturing same
01/17/2002US20020005528 High-speed compound semiconductor device operable at large output power with minimum leakage current
01/17/2002US20020005525 Semiconductor device and power amplifier using the same
01/17/2002US20020005517 Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor
01/17/2002US20020005516 Thin film circuit
01/17/2002US20020005072 Sensor held by base having lead
01/17/2002DE10127391A1 Halbleiter-Vorrichtung A semiconductor device
01/17/2002DE10111200A1 Halbleiterbauelement Semiconductor device
01/17/2002DE10032543A1 Anordnung mit P-dotierten und N-dotierten Halbleiterschichten sowie Verfahren zu deren Herstellung Arrangement with P-doped and N-doped semiconductor layers and processes for their preparation
01/17/2002DE10032389A1 Radio or television signal receiver has high frequency circuit comprising discrete semiconductor device with planar varicap diode and integrated pre-resistor
01/17/2002DE10031781A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
01/17/2002DE10031461A1 Hochvolt-Diode High-voltage diode
01/17/2002DE10030391A1 Anschlussfläche für sublithographische Halbleiterstrukturen und Verfahren zu deren Herstellung Sublithographic pad for semiconductor structures and methods for their preparation
01/17/2002DE10030381A1 Body of semiconductor material with junction between opposing conductivity types has reduced length of travel for charge carriers
01/16/2002EP1172862A1 Power diode and method of maufacturing a power diode
01/16/2002EP1172861A2 Nonvolatile semiconductor memory device and method for fabricating the same
01/16/2002EP1172860A2 Hemt device with a buffer to channel insert layer
01/16/2002EP1172859A2 Partially relaxed channel HEMT device
01/16/2002EP1172858A1 Semiconductor device
01/16/2002EP1172856A1 Nonvolatile semiconductor memory device and method for fabricating the same
01/16/2002EP1172657A1 Accelerometer
01/16/2002EP1171910A2 Manufacture of trench-gate semiconductor devices
01/16/2002EP1171839A1 Assistance method and apparatus
01/16/2002EP1066416A4 Passivating etchants for metallic particles
01/16/2002EP0733269B1 Porous semiconductor material
01/16/2002EP0686308B1 High saturation current, low leakage current fermi threshold field effect transistor
01/16/2002CN2472350Y High temperature resistant large power bipolarity body
01/16/2002CN1331841A Windowed non-ceramic package having embedded frame
01/16/2002CN1331840A Method of making semiconductor device including asymmetrical field-effect transistor
01/16/2002CN1331495A Horizontal semiconductor device
01/16/2002CN1331493A Ultra-small integrated circuit of inductive component including high quality factor
01/16/2002CN1078014C Semiconductor device and process for fabricating same
01/16/2002CN1078012C Prodn. tech. for mfg. semiconductor device
01/15/2002US6339557 Charge retention lifetime evaluation method for nonvolatile semiconductor memory
01/15/2002US6339456 Active matrix liquid crystal display apparatus with parasitic capacitance fluctuation correction
01/15/2002US6339330 Magnetic head
01/15/2002US6339251 Wafer grooves for reducing semiconductor wafer warping
01/15/2002US6339249 Semiconductor diode
01/15/2002US6339246 Tungsten silicide nitride as an electrode for tantalum pentoxide devices
01/15/2002US6339245 Nitride overhang structure for the silicidation of transistor electrodes with shallow junctions
01/15/2002US6339243 High voltage device and method for fabricating the same
01/15/2002US6339242 Semiconductor device lacking steeply rising structures and fabrication method of the same
01/15/2002US6339238 Ferroelectric field effect transistor, memory utilizing same, and method of operating same
01/15/2002US6339233 Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate
01/15/2002US6339230 Method for manufacturing a liquid crystal display
01/15/2002US6339017 Hard mask for integrated circuit fabrication
01/15/2002US6339015 Method of fabricating a non-volatile semiconductor device
01/15/2002US6339010 Semiconductor element forming process having a step of separating film structure from substrate
01/15/2002US6339008 Method of manufacturing a semiconductor memory device
01/15/2002US6339006 Flash EEPROM cell and method of manufacturing the same
01/15/2002US6339005 Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET
01/15/2002US6339002 Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
01/15/2002US6338995 High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same
01/15/2002US6338994 Semiconductor device and method of fabricating thereof
01/15/2002US6338990 Method for fabricating thin-film transistor
01/15/2002US6338988 Method for fabricating self-aligned thin-film transistors to define a drain and source in a single photolithographic step
01/15/2002US6338987 Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
01/15/2002US6338986 Electrostatic discharge protection device for semiconductor integrated circuit method for producing the same and electrostatic discharge protection circuit using the same
01/15/2002US6338980 Method for manufacturing chip-scale package and manufacturing IC chip
01/15/2002US6338874 Vapor deposition on a support in a chamber on a silicon film
01/15/2002US6338868 Forming coatings with silane from polysilazane and dialkyl alkanol amine for coatings
01/10/2002WO2002003482A1 Field effect transistor
01/10/2002WO2002003473A1 Arrangement with p-doped and n-doped semiconductor layers and method for producing the same
01/10/2002WO2002003472A2 Aerosol silicon nanoparticles for use in semiconductor device fabrication
01/10/2002WO2002003470A1 Method of manufacturing a bipolar transistor semiconductor device