Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
03/07/2002 | US20020027804 Nonvolatile memory |
03/07/2002 | US20020027543 Driving circuit of liquid crystal display device |
03/07/2002 | US20020027452 Semiconductor integrated circuit device |
03/07/2002 | US20020027285 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance |
03/07/2002 | US20020027268 Resin-encapsulated semiconductor apparatus and process for its fabrication |
03/07/2002 | US20020027265 Semiconductor device, method for fabricating the semiconductor device, lead frame and method for producing the lead frame |
03/07/2002 | US20020027260 Semiconductor device with isolation insulator, interlayer insulation film, and a sidewall coating film |
03/07/2002 | US20020027257 Method for fabricating a chip scale package using wafer level processing and devices resulting therefrom |
03/07/2002 | US20020027256 Semiconductor integrated circuit device |
03/07/2002 | US20020027255 Semiconductor device and method for producing the same |
03/07/2002 | US20020027254 Transistor having variable width gate electrode and method of manufacturing the same |
03/07/2002 | US20020027253 Circuit incorporated IGBT and power conversion device using the same |
03/07/2002 | US20020027251 Semiconductor device |
03/07/2002 | US20020027250 A protective element formed in an soi substrate for preventing a breakdown in an oxide film located below a diffused resistor |
03/07/2002 | US20020027249 Semiconductor device and method for forming the same |
03/07/2002 | US20020027248 Laser fuseblow protection method for silicon on insulator (SOI) transistors |
03/07/2002 | US20020027247 Semiconductor device and method of manufacturing the same |
03/07/2002 | US20020027246 Semiconductor device |
03/07/2002 | US20020027245 Field effect transistor with reduced narrow channel effect |
03/07/2002 | US20020027244 Semiconductor device and method for fabricating the same |
03/07/2002 | US20020027243 Methods of forming field effect transistors |
03/07/2002 | US20020027242 Arrangemenet in a power MOS transistor |
03/07/2002 | US20020027241 Novel split-gate flash cell |
03/07/2002 | US20020027237 Semiconductor device |
03/07/2002 | US20020027233 Semiconductor device, microcomputer and flash memory |
03/07/2002 | US20020027232 Hbt having a carbon-doped gaasbsb base contact layer |
03/07/2002 | US20020027227 Semiconductor memory device having a trench and a gate electrode vertically formed on a wall of the trench |
03/07/2002 | US20020027189 Solid-state image pick-up device and image pick-up method therefor |
03/07/2002 | US20020027188 TFT type optical detecting sensor implementing small-sized drive IC |
03/07/2002 | US20020026830 Electrostatic capacitance type acceleration sensor, electrostatic capacitance type angular acceleration sensor and electrostatic actuator |
03/07/2002 | DE4143612C2 MOS-controlled thyristor with improved switch=off power |
03/07/2002 | DE10138951A1 SOI-MOSFET und Herstellungsverfahren hierfür SOI-MOSFET and manufacturing method thereof |
03/07/2002 | DE10134484A1 Verfahren zur Verhinderung eines Biegens von Halbleiterschichten und anhand des Verfahrens hergestellte Halbleitervorrichtung A method for preventing bending of the semiconductor layer and produced by the method semiconductor device |
03/07/2002 | DE10131246A1 Method for producing a semiconducter wafer with asymmetric edges involves fixing wafer onto rotating table and offsetting rotating machining tool with respect to centerline of wafer |
03/07/2002 | DE10052007C1 Semiconductor component has compensation zones extending vertically between opposite major surfaces of semiconductor body |
03/07/2002 | DE10040458A1 Vertikaler Feldeffekt-Transistor und Verfahren zu dessen Herstellung Vertical field effect transistor and method of producing the |
03/07/2002 | DE10040452A1 Vertical semiconductor device controlled by field effect, e.g. source-down MOSFET has auxiliary electrode regions in drain zones |
03/07/2002 | CA2421009A1 Protective side wall passivation for vcsel chips |
03/07/2002 | CA2420782A1 Nanoelectronic devices |
03/06/2002 | EP1184984A1 Power module |
03/06/2002 | EP1184910A2 Field plated resistor with enhanced routing area thereover |
03/06/2002 | EP1184909A2 Method of manufacturing an integrated circuit |
03/06/2002 | EP1184908A2 Field effect transistor |
03/06/2002 | EP1184907A1 Method for making a bipolar transistor with a low dielectric constant material in emitter base spacer regions |
03/06/2002 | EP1184900A2 Battery management circuit with power mosfets and manufacturing method thereof |
03/06/2002 | EP1184683A1 X-ray plane detector |
03/06/2002 | EP1183761A2 Semiconductor structures having a strain compensated layer and method of fabrication |
03/06/2002 | EP1183736A1 Improved optoelectronic device |
03/06/2002 | EP1183734A1 Lateral dmos improved breakdown structure and method |
03/06/2002 | EP1183731A1 Semiconductor devices |
03/06/2002 | EP1183730A2 Improved integrated oscillators and tuning circuits |
03/06/2002 | EP1183720A1 Method for cleaning a silicon substrate surface and use for making integrated electronic components |
03/06/2002 | EP1183718A1 Non-volatile semiconductor memory cell and method for its production |
03/06/2002 | EP1183717A1 Method for the growth of a thin silicon oxide layer on a silicon substrate surface and double reactor machine |
03/06/2002 | EP1183555A1 Hydrophone assembly |
03/06/2002 | EP1108163B1 Control device in a motor vehicle |
03/06/2002 | EP1019914B1 Nand-type floating gate memory device with dual source side select transistors and programming method |
03/06/2002 | EP0746875B1 Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material glued on a support wafer |
03/06/2002 | EP0715769B1 Self-aligned cmos process |
03/06/2002 | EP0601093B1 Igbt process using platinum for lifetime control |
03/06/2002 | CN1339173A Lateral field effect transistor of sic, method for production thereof and a use of such a transistor |
03/06/2002 | CN1338781A Insulated gate semiconductor device and manufacture thereof |
03/06/2002 | CN1338780A Protector with thristor rectifier |
03/06/2002 | CN1338770A Manufacture of film semiconductor device |
03/06/2002 | CN1338658A Film semiconductor device and liquid crystal display unit and manufacture thereof |
03/06/2002 | CN1080457C Method for making field effect transistor |
03/05/2002 | US6353254 Device isolation structure and device isolation method for a semiconductor power integrated circuit |
03/05/2002 | US6353252 High breakdown voltage semiconductor device having trenched film connected to electrodes |
03/05/2002 | US6353251 MOS gate Schottky tunnel transistor and an integrated circuit using the same |
03/05/2002 | US6353249 MOSFET with high dielectric constant gate insulator and minimum overlap capacitance |
03/05/2002 | US6353245 Body-tied-to-source partially depleted SOI MOSFET |
03/05/2002 | US6353244 Semiconductor device and manufacturing method thereof |
03/05/2002 | US6353241 Memory circuitry with spaced conductive lines of different elevational thickness |
03/05/2002 | US6353236 Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same |
03/05/2002 | US6353218 Laser illumination apparatus with beam dividing and combining performances |
03/05/2002 | US6353083 Fluorene copolymers and devices made therefrom |
03/05/2002 | US6352946 High-pressure anneal process for integrated circuits |
03/05/2002 | US6352941 Controllable oxidation technique for high quality ultrathin gate oxide formation |
03/05/2002 | US6352939 Method for improving the electrical properties of a gate oxide |
03/05/2002 | US6352931 Manufacturing method of semiconductor devices by using dry etching technology |
03/05/2002 | US6352913 Damascene process for MOSFET fabrication |
03/05/2002 | US6352912 Prior to formation of gate, blanket implanting neutral dopant into semiconductor substrate at energy dose sufficient to implant dopant at depth greater than that of diffusion regions, forming peak concentration at specified depth |
03/05/2002 | US6352911 Thin-film transistor array and method for producing the same |
03/05/2002 | US6352907 Method for manufacturing bipolar devices with a self-aligned base-emitter junction |
03/05/2002 | US6352905 Method and structure of high and low K buried oxide for SOI technology |
03/05/2002 | US6352903 Junction isolation |
03/05/2002 | US6352901 Method of fabricating a bipolar junction transistor using multiple selectively implanted collector regions |
03/05/2002 | US6352899 Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method |
03/05/2002 | US6352895 Method of forming merged self-aligned source and ONO capacitor for split gate non-volatile memory |
03/05/2002 | US6352891 Method of manufacturing semiconductor device in which hot carrier resistance can be improved and silicide layer can be formed with high reliability |
03/05/2002 | US6352886 Method of manufacturing floating gate memory with substrate band-to-band tunneling induced hot electron injection |
03/05/2002 | US6352885 Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same |
03/05/2002 | US6352883 Semiconductor device and method for forming the same |
03/05/2002 | US6352881 Method and apparatus for forming an underfill adhesive layer |
03/05/2002 | US6352872 SOI device with double gate and method for fabricating the same |
03/05/2002 | US6352864 Single transistor cell, method for manufacturing the same, memory circuit composed of single transistors cells, and method for driving the same |
02/28/2002 | WO2002017376A1 Active-matrix liquid crystal display |
02/28/2002 | WO2002017375A1 Vertical field-effect transistor and method for the production thereof |
02/28/2002 | WO2002017372A1 Boron diffusion barrier layer and its use in semiconductor device fabrication |
02/28/2002 | WO2002017368A1 Semiconductor polysilicon component and method of manufacture thereof |