Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2002
04/09/2002US6368905 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device
04/09/2002US6368904 Semiconductor device and method of manufacturing the same
04/09/2002US6368903 SOI low capacitance body contact
04/09/2002US6368885 Method for manufacturing a micromechanical component
04/04/2002WO2002027803A1 Pressure sensor and method for manufacturing pressure sensor
04/04/2002WO2002027802A1 Method for producing a body consisting of semiconductor material having a reduced mean free path length
04/04/2002WO2002027801A1 Body consisting of semiconductor material, comprising a reduced mean free path length
04/04/2002WO2002027800A2 Trench dmos transistor having lightly doped source structure
04/04/2002WO2002027799A2 Process for the fabrication of mosfet devices depletion, silicided source and drain junctions
04/04/2002WO2002027783A1 PREPARATION OF A RELAXED SiGe LAYER ON AN INSULATOR
04/04/2002WO2002027768A2 Fabrication of semiconductor devices
04/04/2002WO2002027390A2 A method of forming electrodes or pixel electrodes and a liquid crystal display device
04/04/2002WO2002001615A3 Crystal structure control of polycrystalline silicon in a single wafer chamber
04/04/2002WO2001099167A3 Memory device including nanoclusters and method for manufacture
04/04/2002WO2001075982A3 Monolithic temperature compensation scheme for field effect transistor integrated circuits
04/04/2002WO2001069657A3 Thermal diode for energy conversion
04/04/2002WO2000062331A9 Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium
04/04/2002US20020039844 Semiconductor devices and fabricating methods thereof
04/04/2002US20020039841 Patterning method, thin film transistor matrix substrate manufacturing method, and exposure mask
04/04/2002US20020039838 Infrared sensor and manufacturing method thereof
04/04/2002US20020039833 Forming of quantum dots
04/04/2002US20020039831 Forming a semiconductor layer having an acute projection of polycrystalline silicon on a substrate, and forming an insulating layer layer by oxidation so the radius of curvature of the projection is a given value
04/04/2002US20020039825 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same
04/04/2002US20020039824 Semiconductor device and a production method for the same
04/04/2002US20020039823 Semiconductor memory device and method for fabricating the same
04/04/2002US20020039822 Nonvolatile semiconductor memory device and method for fabricating the same
04/04/2002US20020039819 Method for manufacturing a field effect transistor
04/04/2002US20020039817 Ion implanting a dopant through a mask opening, and enhancement dopant of a second conductivity type; first dopant forms a halo region proximate the source/drain regions and lightly doped drain (LDD) regions
04/04/2002US20020039816 Method of manufacturing a semiconductor device
04/04/2002US20020039813 Semiconductor device and its manufacturing method
04/04/2002US20020039144 Charge transfer device, CCD image sensor, and CCD image pickup system
04/04/2002US20020039083 Reconfigurable antenna
04/04/2002US20020038998 Luminescent display device of active matrix drive type and fabrication method therefor
04/04/2002US20020038911 Surface modified interconnects
04/04/2002US20020038901 Semiconductor device and method of manufacturing the same
04/04/2002US20020038898 Semiconductor device and method of producing the same
04/04/2002US20020038896 Semiconductor device including a depletion type lateral mosfet and method of forming the same
04/04/2002US20020038895 Insulated gate semiconductor device and its manufacturing method
04/04/2002US20020038894 Fet whose source electrode overhangs gate electrode and its manufacture method
04/04/2002US20020038893 Thin film transistor flat display
04/04/2002US20020038891 Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
04/04/2002US20020038889 Semiconductor device
04/04/2002US20020038888 Semiconductor integrated circuit together with timepiece and electronic equipment provided with the same
04/04/2002US20020038887 Power semiconductor device
04/04/2002US20020038886 Method of forming trench transistor with self-aligned source
04/04/2002US20020038884 Flash memory having memory section and peripheral circuit section and manufacturing the same
04/04/2002US20020038883 Compositionally modified resistive electrode
04/04/2002US20020038878 Semiconductor memory device having redundancy function
04/04/2002US20020038874 Hetero-bipolar transistor and method of manufacture thereof
04/04/2002US20020038872 Compositionally modified resistive electrode
04/04/2002US20020038868 Photodiode and light receiving device with built-in circuit including the photodiode
04/04/2002DE10144420A1 System und Verfahren zum Herstellen eines Halbleiterbauteils System and method for manufacturing a semiconductor device
04/04/2002DE10135047A1 Verfahren zum Herstellen eines Leiters und Verfahren zur Bildung eines Musters A method of manufacturing a conductor and method for forming a pattern
04/04/2002DE10134866A1 Horizontally growing carbon nanotubes for field effect transistors, involves synthesizing carbon nanotubes at exposed surfaces of catalyst pattern
04/04/2002DE10115581A1 Semiconductor device has source-drain areas provided on both sides of gate electrode so that source-drain area and gate electrode have same flat surface
04/04/2002DE10054184C1 Transistor with electrostatic discharge protection has layer resistance of source and drain diffusion zones increased via insulating strip zones
04/04/2002DE10045045A1 Herstellungsverfahren von Feldeffekttransistoren in integrierten Halbleiterschaltungen und mit einem derartigen Feldeffekttransistor hergestellte integrierte Halbleiterschaltung Manufacturing processes of field effect transistors in integrated semiconductor circuits, and with such a field-effect transistor manufactured semiconductor integrated circuit
04/04/2002DE10044960A1 Power switching semiconductor component e.g. thyristor, includes basically-etched V-shaped trench structure forming basis for edge zone diffusion process
04/04/2002DE10044842A1 Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters Organic rectifier circuit RFID tag and use of an organic rectifier
04/04/2002DE10044838A1 Halbleiterbauelement Semiconductor device
04/04/2002DE10043204A1 Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung Organic field-effect transistor, method for structuring an OFET and integrated circuit
04/03/2002EP1193769A2 Method to reduce variation in LDD series resistance
04/03/2002EP1193768A1 Process for driving a turn-off power semiconductor device and device for carrying out this process
04/03/2002EP1193767A2 Insulated gate bipolar transistor and method of making the same
04/03/2002EP1193766A1 Semiconductor device having bipolar transistors
04/03/2002EP1193765A2 Power semiconductor device
04/03/2002EP1193764A1 Integrated photodetector
04/03/2002EP1193763A2 Semiconductor memory device and method for fabricating the same
04/03/2002EP1193762A2 Semiconductor device and its manufacturing method
04/03/2002EP1193760A2 Semiconductor device with SOI structure and method of manufacturing the same
04/03/2002EP1193754A2 Semiconductor device and method of producing the same
04/03/2002EP1193753A2 A method of forming dual thickness gate dielectric structures via use of silicon nitride layers
04/03/2002EP1193748A1 Silicon oxidation method for reduction of the charge trap concentration at the silicon-oxide interface
04/03/2002EP1193743A1 Formation of interfacial oxide layer at the SI3N4/SI interface by H2/O2 annealing
04/03/2002EP1193741A2 Semiconductor device having thin film transistor for supplying current to driven element
04/03/2002EP1193676A2 Thin film transistor for supplying power to an electroluminescent element
04/03/2002EP1192703A1 Charge pump circuit
04/03/2002EP1192676A1 Aligned polymers for an organic tft
04/03/2002EP1192668A1 Semiconductor device for low voltage protection with low capacitance
04/03/2002EP1192667A1 Tunnel contact and method for the production thereof
04/03/2002EP1192666A1 Memory cell arrangement
04/03/2002EP1192665A1 Heterojunction iii-v transistor, in particular hemt field effect transistor or heterojunction bipolar transistor
04/03/2002EP1192664A1 A semiconductor element
04/03/2002EP1192663A2 Semiconductor device with high reverse breakdown voltage and method of manufacturing the same
04/03/2002EP1192662A1 Multi-directional radiation coupling in quantum-well infrared photodetectors
04/03/2002EP1192661A1 Soi dram without floating body effect
04/03/2002EP1192653A1 Method for lateral etching with holes for making semiconductor devices
04/03/2002EP1192652A1 Method of producing a non-volatile semiconductor memory cell with a separate tunnel window
04/03/2002EP1192651A1 Collector-up rf power transistor
04/03/2002EP1192649A1 Method for producing siliconized polysilicon contacts in integrated semiconductor structures
04/03/2002EP1192648A2 Metal oxide thin films for high dielectric constant applications
04/03/2002EP1192640A2 Power mosfet and method of making the same
04/03/2002EP1192419A1 Integrated and multi-axis sensor assembly and packaging
04/03/2002CN2484645Y Nano silicon heterodiode
04/03/2002CN1343374A High speed ge channel heterostructures for field effect devices
04/03/2002CN1343369A IC-compatible parylene MEMS Technology and its application of integrated sensors
04/03/2002CN1082256C Ceramic film structure body and making method thereof
04/03/2002CN1082248C Semiconductor device and its producing method
04/02/2002US6366770 High-frequency semiconductor device and radio transmitter/receiver device
04/02/2002US6366468 Self-aligned common carrier