Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/16/2002 | US6373460 Matrix-type image display device having level shifters |
04/16/2002 | US6373318 Electronic switching device having at least two semiconductor components |
04/16/2002 | US6373274 Characteristic evaluation apparatus for insulated gate type transistors |
04/16/2002 | US6373119 Semiconductor device and method of manufacturing the same |
04/16/2002 | US6373116 Two-dimensional image detector |
04/16/2002 | US6373114 Barrier in gate stack for improved gate dielectric integrity |
04/16/2002 | US6373113 Nitrogenated gate structure for improved transistor performance and method for making same |
04/16/2002 | US6373110 Semiconductor device having high breakdown voltage |
04/16/2002 | US6373108 Semiconductor device having reduced sheet resistance of source/drain regions |
04/16/2002 | US6373106 Semiconductor device and method for fabricating the same |
04/16/2002 | US6373104 Circuit method for reducing parasitic bipolar effects during electrostatic discharges |
04/16/2002 | US6373103 Semiconductor-on-insulator body-source contact using additional drain-side spacer, and method |
04/16/2002 | US6373102 Process for fabricating a channel region of a transistor device with ion implantation and the transistor device formed therefrom |
04/16/2002 | US6373101 Solid-state relay |
04/16/2002 | US6373100 Semiconductor device and method for fabricating the same |
04/16/2002 | US6373098 Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device |
04/16/2002 | US6373097 Field-effect-controllable, vertical semiconductor component, and monolithically integrated half bridge |
04/16/2002 | US6373096 Method of manufacturing semiconductor device, nonvolatile semiconductor memory device and method of manufacturing the same |
04/16/2002 | US6373095 NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area |
04/16/2002 | US6373094 EEPROM cell using conventional process steps |
04/16/2002 | US6373093 Semiconductor memory device and method of manufacturing the same |
04/16/2002 | US6373088 Edge stress reduction by noncoincident layers |
04/16/2002 | US6373086 Notched collar isolation for suppression of vertical parasitic MOSFET and the method of preparing the same |
04/16/2002 | US6373085 Semiconductor memory cell having two epitaxial layers and its manufacturing method |
04/16/2002 | US6373083 Capacitor for semiconductor device and fabrication method thereof |
04/16/2002 | US6373082 Compound semiconductor field effect transistor |
04/16/2002 | US6373081 Field effect transistor and method of fabricating the same |
04/16/2002 | US6373080 Thin film transistor with electrode on one side of a trench |
04/16/2002 | US6373079 Thyristor with breakdown region |
04/16/2002 | US6373076 Passivated silicon carbide devices with low leakage current and method of fabricating |
04/16/2002 | US6373075 Semiconductor device comprising a semiconductor film having substantially no grain boundary |
04/16/2002 | US6372659 Fabrication of metal oxide structure for a gate dielectric of a field effect transistor |
04/16/2002 | US6372654 Apparatus for fabricating a semiconductor device and method of doing the same |
04/16/2002 | US6372644 Forming a silicon gate electrode, forming silicon nitride spacers; treating silicon nitride sidewall spacers to form hydrogen passivated regions; depositing nickel layer; heating to form nickel silicide layer |
04/16/2002 | US6372618 Methods of forming semiconductor structures |
04/16/2002 | US6372617 Method of manufacturing non-volatile memory |
04/16/2002 | US6372615 MOSFET and fabrication method thereof |
04/16/2002 | US6372613 Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor |
04/16/2002 | US6372612 Method for manufacturing semiconductor circuit |
04/16/2002 | US6372597 Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor substrate |
04/16/2002 | US6372596 Method of making horizontal bipolar transistor with insulated base structure |
04/16/2002 | US6372595 Lateral bipolar junction transistor with reduced parasitic current loss |
04/16/2002 | US6372594 Fabrication method of submicron gate using anisotropic etching |
04/16/2002 | US6372593 Method of manufacturing SOI substrate and semiconductor device |
04/16/2002 | US6372592 Self-aligned MOSFET with electrically active mask |
04/16/2002 | US6372587 Angled halo implant tailoring using implant mask |
04/16/2002 | US6372586 Method for LDMOS transistor with thick copper interconnect |
04/16/2002 | US6372583 Process for making semiconductor device with epitaxially grown source and drain |
04/16/2002 | US6372582 Indium retrograde channel doping for improved gate oxide reliability |
04/16/2002 | US6372581 Process for nitriding the gate oxide layer of a semiconductor device and device obtained |
04/16/2002 | US6372579 Producing laterally diffused metal-oxide semiconductor |
04/16/2002 | US6372578 Manufacturing method of non-volatile semiconductor device |
04/16/2002 | US6372576 Method for manufacturing a floating gate in a flash memory device |
04/16/2002 | US6372567 Control of oxide thickness in vertical transistor structures |
04/16/2002 | US6372566 Method of forming a silicide layer using metallic impurities and pre-amorphization |
04/16/2002 | US6372564 Method of manufacturing V-shaped flash memory |
04/16/2002 | US6372563 Self-aligned SOI device with body contact and NiSi2 gate |
04/16/2002 | US6372562 Method of producing a semiconductor device |
04/16/2002 | US6372561 Fabrication of fully depleted field effect transistor formed in SOI technology with a single implantation step |
04/16/2002 | US6372559 Method for self-aligned vertical double-gate MOSFET |
04/16/2002 | US6372558 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate |
04/16/2002 | US6372557 Method of manufacturing a lateral fet having source contact to substrate with low resistance |
04/16/2002 | US6372550 Semiconductor device and method for manufacturing same |
04/16/2002 | US6372536 Contact structures with which it is possible to produce low-loss p-type contact with p-conducting zinc-selenium semiconductor layer |
04/16/2002 | US6372535 Manufacturing method of a thin film transistor |
04/16/2002 | US6372534 Method of making a TFT array with photo-imageable insulating layer over address lines |
04/16/2002 | US6372518 Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same |
04/16/2002 | US6372497 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination |
04/16/2002 | US6372083 Masking and doping are carried out continuously without exposing the substrate to the atmosphere; thin film transistor |
04/16/2002 | US6370960 Capacitive sensor |
04/16/2002 | US6370954 Semiconductor integrated inertial sensor with calibration microactuator |
04/11/2002 | WO2002029949A2 Semiconductor device with protective functions |
04/11/2002 | WO2002029912A1 Solid state embossing of polymer devices |
04/11/2002 | WO2002029903A2 Silicon-on-insulator (soi) trench photodiode and method of forming same |
04/11/2002 | WO2002029902A1 Nonvolatile semiconductor storage device and production method therefor |
04/11/2002 | WO2002029901A1 Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device |
04/11/2002 | WO2002029900A2 Silicon carbide power mosfets having a shorting channel and methods of fabrication them |
04/11/2002 | WO2002029899A2 High voltage insulated-gate bipolar switch |
04/11/2002 | WO2002029898A2 Reset transistor for cmos imagers |
04/11/2002 | WO2002029882A1 Silicon oxide liner for reduced nickel silicide bridging |
04/11/2002 | WO2002029874A2 Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o |
04/11/2002 | WO2002029365A2 Freeze resistant sensor |
04/11/2002 | WO2002029125A1 High purity zirconium or hafnium, sputtering target comprising the high purity zirconium or hafnium and thin film formed using the target, and method for producing high purity zirconium or hafnium and method for producing powder of high purity zirconium or hafnium |
04/11/2002 | WO2002013259A3 Method and apparatus for measuring parameters of an electronic device |
04/11/2002 | WO2002007222A3 Receiver comprising a variable capacitance diode |
04/11/2002 | WO2002005317A3 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
04/11/2002 | WO2002005300A3 Feedback control of strip time to reduce post strip critical dimension variation in a transistor gate electrode |
04/11/2002 | WO2002003468A3 A novel capacitively coupled dtmos on soi |
04/11/2002 | WO2002001622A3 Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
04/11/2002 | WO2001097274A3 Heterostructure field effect transistor and method of manufacturing it |
04/11/2002 | WO2000031802A9 Slotted quantum well sensor |
04/11/2002 | US20020042211 Decomposition of of organosilicon compound; heat treatment |
04/11/2002 | US20020042201 Chemical mechanical planarization of conductive material |
04/11/2002 | US20020042188 Semiconductor raised source-drain structure |
04/11/2002 | US20020042178 Single crystal silicon substrate; carbon doping; annealing |
04/11/2002 | US20020042177 Arsenic and phosphorus doping |
04/11/2002 | US20020042172 Semiconductor integrated circuit device and the process of the same |
04/11/2002 | US20020042171 Electro-optical device and thin film transistor and method for forming the same |
04/11/2002 | US20020042170 Semiconductor device and process for producing same |
04/11/2002 | US20020042168 Heating, crystallization, oxidation |