Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2002
04/16/2002US6373460 Matrix-type image display device having level shifters
04/16/2002US6373318 Electronic switching device having at least two semiconductor components
04/16/2002US6373274 Characteristic evaluation apparatus for insulated gate type transistors
04/16/2002US6373119 Semiconductor device and method of manufacturing the same
04/16/2002US6373116 Two-dimensional image detector
04/16/2002US6373114 Barrier in gate stack for improved gate dielectric integrity
04/16/2002US6373113 Nitrogenated gate structure for improved transistor performance and method for making same
04/16/2002US6373110 Semiconductor device having high breakdown voltage
04/16/2002US6373108 Semiconductor device having reduced sheet resistance of source/drain regions
04/16/2002US6373106 Semiconductor device and method for fabricating the same
04/16/2002US6373104 Circuit method for reducing parasitic bipolar effects during electrostatic discharges
04/16/2002US6373103 Semiconductor-on-insulator body-source contact using additional drain-side spacer, and method
04/16/2002US6373102 Process for fabricating a channel region of a transistor device with ion implantation and the transistor device formed therefrom
04/16/2002US6373101 Solid-state relay
04/16/2002US6373100 Semiconductor device and method for fabricating the same
04/16/2002US6373098 Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device
04/16/2002US6373097 Field-effect-controllable, vertical semiconductor component, and monolithically integrated half bridge
04/16/2002US6373096 Method of manufacturing semiconductor device, nonvolatile semiconductor memory device and method of manufacturing the same
04/16/2002US6373095 NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area
04/16/2002US6373094 EEPROM cell using conventional process steps
04/16/2002US6373093 Semiconductor memory device and method of manufacturing the same
04/16/2002US6373088 Edge stress reduction by noncoincident layers
04/16/2002US6373086 Notched collar isolation for suppression of vertical parasitic MOSFET and the method of preparing the same
04/16/2002US6373085 Semiconductor memory cell having two epitaxial layers and its manufacturing method
04/16/2002US6373083 Capacitor for semiconductor device and fabrication method thereof
04/16/2002US6373082 Compound semiconductor field effect transistor
04/16/2002US6373081 Field effect transistor and method of fabricating the same
04/16/2002US6373080 Thin film transistor with electrode on one side of a trench
04/16/2002US6373079 Thyristor with breakdown region
04/16/2002US6373076 Passivated silicon carbide devices with low leakage current and method of fabricating
04/16/2002US6373075 Semiconductor device comprising a semiconductor film having substantially no grain boundary
04/16/2002US6372659 Fabrication of metal oxide structure for a gate dielectric of a field effect transistor
04/16/2002US6372654 Apparatus for fabricating a semiconductor device and method of doing the same
04/16/2002US6372644 Forming a silicon gate electrode, forming silicon nitride spacers; treating silicon nitride sidewall spacers to form hydrogen passivated regions; depositing nickel layer; heating to form nickel silicide layer
04/16/2002US6372618 Methods of forming semiconductor structures
04/16/2002US6372617 Method of manufacturing non-volatile memory
04/16/2002US6372615 MOSFET and fabrication method thereof
04/16/2002US6372613 Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor
04/16/2002US6372612 Method for manufacturing semiconductor circuit
04/16/2002US6372597 Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor substrate
04/16/2002US6372596 Method of making horizontal bipolar transistor with insulated base structure
04/16/2002US6372595 Lateral bipolar junction transistor with reduced parasitic current loss
04/16/2002US6372594 Fabrication method of submicron gate using anisotropic etching
04/16/2002US6372593 Method of manufacturing SOI substrate and semiconductor device
04/16/2002US6372592 Self-aligned MOSFET with electrically active mask
04/16/2002US6372587 Angled halo implant tailoring using implant mask
04/16/2002US6372586 Method for LDMOS transistor with thick copper interconnect
04/16/2002US6372583 Process for making semiconductor device with epitaxially grown source and drain
04/16/2002US6372582 Indium retrograde channel doping for improved gate oxide reliability
04/16/2002US6372581 Process for nitriding the gate oxide layer of a semiconductor device and device obtained
04/16/2002US6372579 Producing laterally diffused metal-oxide semiconductor
04/16/2002US6372578 Manufacturing method of non-volatile semiconductor device
04/16/2002US6372576 Method for manufacturing a floating gate in a flash memory device
04/16/2002US6372567 Control of oxide thickness in vertical transistor structures
04/16/2002US6372566 Method of forming a silicide layer using metallic impurities and pre-amorphization
04/16/2002US6372564 Method of manufacturing V-shaped flash memory
04/16/2002US6372563 Self-aligned SOI device with body contact and NiSi2 gate
04/16/2002US6372562 Method of producing a semiconductor device
04/16/2002US6372561 Fabrication of fully depleted field effect transistor formed in SOI technology with a single implantation step
04/16/2002US6372559 Method for self-aligned vertical double-gate MOSFET
04/16/2002US6372558 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate
04/16/2002US6372557 Method of manufacturing a lateral fet having source contact to substrate with low resistance
04/16/2002US6372550 Semiconductor device and method for manufacturing same
04/16/2002US6372536 Contact structures with which it is possible to produce low-loss p-type contact with p-conducting zinc-selenium semiconductor layer
04/16/2002US6372535 Manufacturing method of a thin film transistor
04/16/2002US6372534 Method of making a TFT array with photo-imageable insulating layer over address lines
04/16/2002US6372518 Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same
04/16/2002US6372497 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination
04/16/2002US6372083 Masking and doping are carried out continuously without exposing the substrate to the atmosphere; thin film transistor
04/16/2002US6370960 Capacitive sensor
04/16/2002US6370954 Semiconductor integrated inertial sensor with calibration microactuator
04/11/2002WO2002029949A2 Semiconductor device with protective functions
04/11/2002WO2002029912A1 Solid state embossing of polymer devices
04/11/2002WO2002029903A2 Silicon-on-insulator (soi) trench photodiode and method of forming same
04/11/2002WO2002029902A1 Nonvolatile semiconductor storage device and production method therefor
04/11/2002WO2002029901A1 Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device
04/11/2002WO2002029900A2 Silicon carbide power mosfets having a shorting channel and methods of fabrication them
04/11/2002WO2002029899A2 High voltage insulated-gate bipolar switch
04/11/2002WO2002029898A2 Reset transistor for cmos imagers
04/11/2002WO2002029882A1 Silicon oxide liner for reduced nickel silicide bridging
04/11/2002WO2002029874A2 Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o
04/11/2002WO2002029365A2 Freeze resistant sensor
04/11/2002WO2002029125A1 High purity zirconium or hafnium, sputtering target comprising the high purity zirconium or hafnium and thin film formed using the target, and method for producing high purity zirconium or hafnium and method for producing powder of high purity zirconium or hafnium
04/11/2002WO2002013259A3 Method and apparatus for measuring parameters of an electronic device
04/11/2002WO2002007222A3 Receiver comprising a variable capacitance diode
04/11/2002WO2002005317A3 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
04/11/2002WO2002005300A3 Feedback control of strip time to reduce post strip critical dimension variation in a transistor gate electrode
04/11/2002WO2002003468A3 A novel capacitively coupled dtmos on soi
04/11/2002WO2002001622A3 Novel non-crystalline oxides for use in microelectronic, optical, and other applications
04/11/2002WO2001097274A3 Heterostructure field effect transistor and method of manufacturing it
04/11/2002WO2000031802A9 Slotted quantum well sensor
04/11/2002US20020042211 Decomposition of of organosilicon compound; heat treatment
04/11/2002US20020042201 Chemical mechanical planarization of conductive material
04/11/2002US20020042188 Semiconductor raised source-drain structure
04/11/2002US20020042178 Single crystal silicon substrate; carbon doping; annealing
04/11/2002US20020042177 Arsenic and phosphorus doping
04/11/2002US20020042172 Semiconductor integrated circuit device and the process of the same
04/11/2002US20020042171 Electro-optical device and thin film transistor and method for forming the same
04/11/2002US20020042170 Semiconductor device and process for producing same
04/11/2002US20020042168 Heating, crystallization, oxidation