| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/14/2002 | US20020018149 Liquid crystal display panel and method of manufactuing the same |
| 02/14/2002 | US20020017827 Pulsed electron jump generator |
| 02/14/2002 | US20020017703 Complementary bipolar transistors and manufacturing methods thereof |
| 02/14/2002 | US20020017697 Semiconductor device and manufacturing method thereof |
| 02/14/2002 | US20020017696 Semiconductor device with schottky electrode having high schottky barrier |
| 02/14/2002 | US20020017693 Moscap design for improved reliability |
| 02/14/2002 | US20020017692 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration |
| 02/14/2002 | US20020017691 Semiconductor device having gate electrode and method of fabricating the same |
| 02/14/2002 | US20020017689 Semiconductor device and method of manufacturing same |
| 02/14/2002 | US20020017687 Semiconductor device and method for forming the same |
| 02/14/2002 | US20020017684 Transistor with integrated photodetector for conductivity modulation |
| 02/14/2002 | US20020017683 High voltage semiconductor device having high breakdown voltage isolation region |
| 02/14/2002 | US20020017682 Semiconductor device |
| 02/14/2002 | US20020017681 Semiconductor device and method of manufacture |
| 02/14/2002 | US20020017680 Non-volatile memory device and fabrication method |
| 02/14/2002 | US20020017679 Semiconductor device including nonvolatile semiconductor memory devices |
| 02/14/2002 | US20020017677 Semiconductor device having laminated gate structure and method for manufacturing the semiconductor device |
| 02/14/2002 | US20020017669 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same |
| 02/14/2002 | US20020017667 Ferroelectric memory and method of fabricating the same |
| 02/14/2002 | US20020017665 Thin film transistor and method of manufacturing the same |
| 02/14/2002 | US20020017664 Protective layer for integrated circuits and method for the manufacturing thereof |
| 02/14/2002 | US20020017662 Manufacturing methods for defect removable semiconductor devices |
| 02/14/2002 | US20020017659 Semiconductor memory device and manufacturing method thereof |
| 02/14/2002 | US20020017658 Process for forming amorphous titanium silicon nitride on substrate |
| 02/14/2002 | US20020017654 Protection device with a silicon-controlled rectifier |
| 02/14/2002 | US20020017649 Method for producing insulated gate thin film semiconductor device |
| 02/14/2002 | US20020017648 Semiconductor device |
| 02/14/2002 | US20020017645 Electro-optical device |
| 02/14/2002 | US20020017644 Buried channel strained silicon FET using a supply layer created through ion implantation |
| 02/14/2002 | US20020017643 Display device and method of driving the same |
| 02/14/2002 | US20020017642 Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor |
| 02/14/2002 | US20020017177 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 02/14/2002 | US20020017134 Inertia sensor and method of fabricating the same |
| 02/14/2002 | US20020017133 Surface/bulk micromachined single-crystalline silicon micro-gyroscope |
| 02/14/2002 | US20020017132 Micro-machining |
| 02/14/2002 | EP1145286A3 Method for structuring a metalliferous layer |
| 02/14/2002 | DE10134558A1 Semiconductor sensor for dynamic parameters, has restricted Q factor for flexible elements |
| 02/14/2002 | DE10134444A1 Semiconductor device for reducing junction leakage current and narrow width effect comprises channel stop impurity region self-aligned by spacer and locally formed only at lower portion of isolation region |
| 02/14/2002 | DE10121551A1 Reverse conducting thyristor for making an antiparallel connection between a gate-controlled turn-off switch or GCS thyristor and a diode has an isolating area between the diode and a GTO thyristor with a semiconductor substrate. |
| 02/14/2002 | DE10113967A1 Leistungsmodul Power module |
| 02/14/2002 | DE10048196A1 Production of a III-V compound semiconductor based on gallium nitride comprises forming the semiconductor stacked structure on a substrate, etching, forming a first electrode, tempering, and forming a second electrode |
| 02/14/2002 | DE10039327A1 Elektronisches Bauelement und Herstellungsverfahren für elektronisches Bauelement Electronic device and manufacturing method of electronic component |
| 02/14/2002 | DE10036911A1 Multi-Bit-Speicherzelle und Verfahren zur Herstellung Multi-bit memory cell and method for producing |
| 02/14/2002 | DE10036208A1 Current control semiconductor device has current within lateral channel region controlled via at least one depletion zone |
| 02/14/2002 | DE10026911A1 Verfahren zur Herstellung einer halbleitenden Nanostruktur und Aggregat davon A process for producing a semiconducting nanostructure and aggregate thereof |
| 02/14/2002 | DE10026553A1 Heterostructure FET consists of a silicon/silicon-germanium heterostructure layer arrangement with a gate contact zone formed as a pn- or np-diode contact made of semiconductor material |
| 02/13/2002 | EP1179859A2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
| 02/13/2002 | EP1179853A1 High breakdown voltage semiconductor device |
| 02/13/2002 | EP1179850A2 A semiconductor memory and its production process |
| 02/13/2002 | EP1179837A2 Transistor structure comprising doped zirconia, or zirconia-like dielectic film |
| 02/13/2002 | EP1179620A1 Silicon carbide and method of manufacturing the same |
| 02/13/2002 | EP1179381A2 Surface treatment apparatus |
| 02/13/2002 | EP1179218A1 Semiconductor device and method of manufacturing same |
| 02/13/2002 | CN1336010A Layered dielectric on silicon carbide semiconductor structures |
| 02/13/2002 | CN1335649A Bidirectional triggered diode for semiconductor |
| 02/13/2002 | CN1335648A MOS field effect tube (FEI) for reducing source-drain interelectrode resistance and its producing method |
| 02/13/2002 | CN1335646A Surface adhered diode array and its manufacture |
| 02/13/2002 | CN1079165C Method for forming impurity junction regions of semiconductor device |
| 02/12/2002 | US6347053 Nonviolatile memory device having improved threshold voltages in erasing and programming operations |
| 02/12/2002 | US6346978 SOI TFT array substrate for LCD projection display |
| 02/12/2002 | US6346840 Electronic device for controlling the “bouncing” in electronic circuits integrated on semiconductor substrate |
| 02/12/2002 | US6346740 Semiconductor device |
| 02/12/2002 | US6346735 Semiconductor sensor structure and method of manufacturing the same |
| 02/12/2002 | US6346731 Semiconductor apparatus having conductive thin films |
| 02/12/2002 | US6346730 Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
| 02/12/2002 | US6346729 Pseudo silicon on insulator MOSFET device |
| 02/12/2002 | US6346728 Plural transistor device with multi-finger structure |
| 02/12/2002 | US6346727 Semiconductor device having optimized two-dimensional array of double diffused MOS field effect transistors |
| 02/12/2002 | US6346726 Low voltage MOSFET power device having a minimum figure of merit |
| 02/12/2002 | US6346720 Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
| 02/12/2002 | US6346718 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same |
| 02/12/2002 | US6346717 Semiconductor device, substrate for electro-optical device, electro-optical device, electronic device and projection display |
| 02/12/2002 | US6346487 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer |
| 02/12/2002 | US6346486 Transistor device and method of forming the same |
| 02/12/2002 | US6346467 Method of making tungsten gate MOS transistor and memory cell by encapsulating |
| 02/12/2002 | US6346465 Semiconductor device with silicide contact structure and fabrication method thereof |
| 02/12/2002 | US6346464 Manufacturing method of semiconductor device |
| 02/12/2002 | US6346463 Method for forming a semiconductor device with a tailored well profile |
| 02/12/2002 | US6346462 Method of fabricating a thin film transistor |
| 02/12/2002 | US6346453 Planarizing polycrystalline silicon layer to expose mesa; etching to expose |
| 02/12/2002 | US6346452 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers |
| 02/12/2002 | US6346451 Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
| 02/12/2002 | US6346450 Process for manufacturing MIS transistor with self-aligned metal grid |
| 02/12/2002 | US6346448 Method of manufacturing a semiconductor device |
| 02/12/2002 | US6346447 Shallow-implant elevated source/drain doping from a sidewall dopant source |
| 02/12/2002 | US6346446 Methods of forming features of integrated circuits using modified buried layers |
| 02/12/2002 | US6346444 Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof |
| 02/12/2002 | US6346443 Non-volatile semiconductor memory device |
| 02/12/2002 | US6346441 Method of fabricating flash memory cell using two tilt implantation steps |
| 02/12/2002 | US6346439 Semiconductor transistor devices and methods for forming semiconductor transistor devices |
| 02/12/2002 | US6346438 Method of manufacturing a semiconductor device |
| 02/12/2002 | US6346437 Single crystal TFT from continuous transition metal delivery method |
| 02/12/2002 | US6346436 Quantum thin line producing method and semiconductor device |
| 02/12/2002 | US6346424 Process for producing high-epsilon dielectric layer or ferroelectric layer |
| 02/12/2002 | CA2126649C Method and circuit arrangement for measuring the depletion layer temperature of a gto (gate turn-off) thyristor |
| 02/07/2002 | WO2002011216A1 Field effect transistor, circuit arrangement and method for production of a field effect transistor |
| 02/07/2002 | WO2002011212A1 W/wc/tac ohmic and rectifying contacts on sic |
| 02/07/2002 | WO2002011211A2 An optical device and a method of making an optical device |
| 02/07/2002 | WO2002011210A1 Inverter |
| 02/07/2002 | WO2002011145A2 Method for producing a multi-bit memory cell |