| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 03/28/2002 | US20020036316 Process for producing semiconductor memory device and semiconductor memory device |
| 03/28/2002 | US20020036314 Semiconductor memory device |
| 03/28/2002 | US20020036311 Power semiconductor device and manufacturing method thereof |
| 03/28/2002 | US20020036308 Semiconductor memory and its production process |
| 03/28/2002 | US20020036306 Semiconductor device having a reduced leakage current and a fabrication process thereof |
| 03/28/2002 | US20020036305 Ferroelectric memory device and method for manufacturing same |
| 03/28/2002 | US20020036298 Hole transporting agents and photoelectric conversion device comprising the same |
| 03/28/2002 | US20020036294 Matrix type liquid-crystal display unit |
| 03/28/2002 | US20020036290 Semiconductor device having MIS field effect transistors or three-dimensional structure |
| 03/28/2002 | US20020036289 Liquid crystal display element and method of manufacturing the same |
| 03/28/2002 | US20020036288 Semiconductor display device and manufacturing method thereof |
| 03/28/2002 | US20020036287 Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET |
| 03/28/2002 | US20020036286 Gallium nitride based II-V group compound semiconductor device |
| 03/28/2002 | US20020036267 Planar X-ray detector |
| 03/28/2002 | US20020035873 Semiconductor dynamic quantity sensor |
| 03/28/2002 | DE10144350A1 Sensor production method for e.g. air pressure sensor, in which the sensor is encapsulated and covered with a plate during manufacture and a hole is drilled in the plate |
| 03/28/2002 | DE10141916A1 MOS-Halbleitervorrichtung und Verfahren zum Herstellen derselben MOS semiconductor device and method of manufacturing the same |
| 03/28/2002 | DE10119383A1 Hochfrequenz-Halbleitervorrichtung High-frequency semiconductor device |
| 03/28/2002 | DE10115489A1 Semiconductor device e.g. MOSFET has gate insulating film consisting of deuterium atom content silicon nitride film and silicon oxide film |
| 03/28/2002 | DE10042931A1 Process for fixing semiconductor chip to substrate comprises forming profile on the edge on the lower side of the chip to create larger distance between the chip and the substrate |
| 03/28/2002 | DE10042343A1 Bipolar transistor used for high frequency circuits and highly integrated electronic circuits comprises a base layer having a partial vertical structure and a contact arranged on a side wall of the vertical structure |
| 03/28/2002 | DE10042226A1 Source down power MOSFET for use in semiconductors has a rear side with a p-type substrate for embedding an N-type source area short-circuited with the substrate via a non-rectifying connection |
| 03/28/2002 | CA2423028A1 Semiconductor device and method of forming a semiconductor device |
| 03/27/2002 | EP1191692A1 Power module |
| 03/27/2002 | EP1191604A2 Semiconductor memory device |
| 03/27/2002 | EP1191603A2 Trench MOS device and termination structure |
| 03/27/2002 | EP1191602A2 Method of forming trench MOS device and termination structure |
| 03/27/2002 | EP1191601A1 A lateral DMOS transistor |
| 03/27/2002 | EP1191600A2 Insulated gate semiconductor device |
| 03/27/2002 | EP1191599A2 Interstitial diffusion barrier |
| 03/27/2002 | EP1191598A1 Method for fabricating a pn junction in a semiconductor device |
| 03/27/2002 | EP1191597A2 Sidewall process to improve the flash memory cell performance |
| 03/27/2002 | EP1191592A2 Cathode contact structures in organic electroluminescent devices |
| 03/27/2002 | EP1191586A2 Floating gate memory and manufacturing method |
| 03/27/2002 | EP1191585A2 Floating gate memory and manufacturing method |
| 03/27/2002 | EP1191584A2 Floating gate memory and manufacturing method |
| 03/27/2002 | EP1191583A2 Low voltage transistor |
| 03/27/2002 | EP1191579A2 Solid state electronic device fabrication using crystalline defect control |
| 03/27/2002 | EP1191577A1 MOSFET transistor |
| 03/27/2002 | EP1191576A1 Wet etching process for forming an HEMT IC |
| 03/27/2002 | EP1191479A1 Programmable neuron mosfet |
| 03/27/2002 | EP1190454A1 Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers |
| 03/27/2002 | EP1190453A2 Field-effect semiconductor devices |
| 03/27/2002 | EP1190452A1 InGaAsN/GaAs QUANTUM WELL DEVICES |
| 03/27/2002 | EP1190450A2 Electrostatic discharge protection of integrated circuits |
| 03/27/2002 | EP1190447A2 Trench mos-transistor |
| 03/27/2002 | EP1190444A2 Removal of silicon oxynitride material using a wet chemical process after gate etch processing |
| 03/27/2002 | EP1190442A2 Semiconductor device manufacturing using low energy high tilt angle ion implantation |
| 03/27/2002 | EP0907880B1 Pressure sensor component mounted on the insertion surface of a circuit board |
| 03/27/2002 | CN1342332A Trench DMOS transistor structure having low resistance path to drain contact located on upper surface |
| 03/27/2002 | CN1342037A Protecting circuit device using metal oxide semiconductor field effect transistor and its manufacturing method |
| 03/27/2002 | CN1341970A 电子装置 Electronic devices |
| 03/27/2002 | CN1341961A Method for manufacturing semiconductor integrated circuit device |
| 03/27/2002 | CN1341956A Method for manufacturing field effect transistor |
| 03/27/2002 | CN1341954A Method for manufacturing crystal semiconductor material and method for making semiconductor device |
| 03/27/2002 | CN1081833C Thin film transistor of silicon-on-insulator |
| 03/27/2002 | CN1081832C Method for fabricating metal oxide semiconductor field effect transistor |
| 03/27/2002 | CN1081826C Non-volatile semiconductor store and data programing method |
| 03/27/2002 | CN1081825C 半导体集成电路器件 The semiconductor integrated circuit device |
| 03/26/2002 | US6362866 Liquid crystal electrooptical device |
| 03/26/2002 | US6362865 Liquid crystal display apparatus and method for manufacturing liquid crystal display apparatus |
| 03/26/2002 | US6362864 Vertical alignment liquid crystal display device having planarized substrate surface |
| 03/26/2002 | US6362798 Transistor circuit, display panel and electronic apparatus |
| 03/26/2002 | US6362689 MMIC folded power amplifier |
| 03/26/2002 | US6362532 Semiconductor device having ball-bonded pads |
| 03/26/2002 | US6362511 MIS-type semiconductor device having a multi-portion gate electrode |
| 03/26/2002 | US6362510 Semiconductor topography having improved active device isolation and reduced dopant migration |
| 03/26/2002 | US6362509 Field effect transistor with organic semiconductor layer |
| 03/26/2002 | US6362507 Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate |
| 03/26/2002 | US6362505 MOS field-effect transistor with auxiliary electrode |
| 03/26/2002 | US6362504 Contoured nonvolatile memory cell |
| 03/26/2002 | US6362500 Memory structure in ferroelectric nonvolatile memory and readout method therefor |
| 03/26/2002 | US6362499 Ferroelectric transistors using thin film semiconductor gate electrodes |
| 03/26/2002 | US6362495 Dual-metal-trench silicon carbide Schottky pinch rectifier |
| 03/26/2002 | US6362493 Field-effect transistor and fabrication method thereof and image display apparatus |
| 03/26/2002 | US6362097 Collimated sputtering of semiconductor and other films |
| 03/26/2002 | US6362086 Forming a conductive structure in a semiconductor device |
| 03/26/2002 | US6362078 Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devices |
| 03/26/2002 | US6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
| 03/26/2002 | US6362072 Process for realizing trench structures |
| 03/26/2002 | US6362066 Method for manufacturing bipolar devices |
| 03/26/2002 | US6362065 Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer |
| 03/26/2002 | US6362060 Method for forming semiconductor device having a gate in the trench |
| 03/26/2002 | US6362059 Production of a semiconductor device having a P-well |
| 03/26/2002 | US6362058 Method for controlling an implant profile in the channel of a transistor |
| 03/26/2002 | US6362054 Method for fabricating MOS device with halo implanted region |
| 03/26/2002 | US6362051 Reliability |
| 03/26/2002 | US6362049 High yield performance semiconductor process flow for NAND flash memory products |
| 03/26/2002 | US6362048 Method of manufacturing floating gate of flash memory |
| 03/26/2002 | US6362047 Method of manufacturing EEPROM memory points |
| 03/26/2002 | US6362046 Semiconductor device allowing electrical writing and erasing of information and method of manufacturing the same |
| 03/26/2002 | US6362045 Tunneling dielectric layer is grown on semiconductor substrate, polysilicon layer is deposited, nitrogen is implanted; patterning to form floating gates, depositing silicon oxide nitride layers; depositing conductive layer |
| 03/26/2002 | US6362038 Low and high voltage CMOS devices and process for fabricating same |
| 03/26/2002 | US6362036 VDMOS transistor protected against over-voltages between source and gate |
| 03/26/2002 | US6362031 Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same |
| 03/26/2002 | US6362027 Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate |
| 03/26/2002 | US6362026 Edge termination for silicon power devices |
| 03/26/2002 | US6362025 Method of manufacturing a vertical-channel MOSFET |
| 03/26/2002 | US6362021 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
| 03/26/2002 | US6360605 Micromechanical device |