Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2002
03/13/2002EP1186885A1 Field-effect transistor
03/13/2002EP1186055A1 Low turn-on voltage inp schottky device and method for making the same
03/13/2002EP1186054A1 Current controlled field effect transistor
03/13/2002EP1186053A2 A FIELD EFFECT TRANSISTOR OF SiC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF
03/13/2002EP1186052A2 Source-down power transistor
03/13/2002EP1186051A1 Semiconductor device with compensated threshold voltage and method for making same
03/13/2002EP1186050A1 High voltage solid state device termination
03/13/2002EP1186049A2 A bipolar transistor
03/13/2002EP1186047A1 Minimally-patterned semiconductor devices for display applications
03/13/2002EP1186042A1 Integrated circuit with programmable memory element
03/13/2002EP1186040A1 Improved rf power transistor
03/13/2002EP1186027A1 Double gated transistor
03/13/2002EP1186023A1 A super-self-aligned trench-gate dmos with reduced on-resistance
03/13/2002EP1186020A1 A method of manufacturing a semiconductor device
03/13/2002EP1186019A1 Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
03/13/2002EP1186017A2 Self-aligned source and drain extensions fabricated in a damascene contact and gate process
03/13/2002EP1186010A1 Nitrided re-oxidised polysilicon gate to improve hot carrier performance
03/13/2002EP1186008A2 Lateral insulated-gate bipolar transistor (ligbt) device in silicon-on-insulator (soi) technology
03/13/2002EP1186002A1 Ic-compatible parylene mems technology and its application in integrated sensors
03/13/2002EP0898785A4 Active matrix displays and method of making
03/13/2002CN1340213A Microelectronic device for storing information and method thereof
03/13/2002CN1340211A Semiconductor device with deep substrate contacts
03/13/2002CN1340082A 环氧树脂组合物 The epoxy resin composition
03/13/2002CN1339827A Semi-insulation diffusion potential barrier of low resistivity grid conductor
03/13/2002CN1339820A Method for preventing semiconductor layer bending and semiconductor device formed by said method
03/13/2002CN1080930C Method for making a semiconductor structure
03/12/2002US6356958 Integrated circuit module has common function known good integrated circuit die with multiple selectable functions
03/12/2002US6356479 Semiconductor memory system
03/12/2002US6356326 Active matrix substrate of a liquid crystal display comprising an insulating layer being made of solid solution of SiOx /SINy
03/12/2002US6356319 Liquid crystal display device and method of manufacturing the same
03/12/2002US6356318 Active-matrix liquid crystal display having storage capacitors of area smaller than that of pixel electrodes
03/12/2002US6356223 D/A conversion circuit and semiconductor device
03/12/2002US6355974 Method to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulator
03/12/2002US6355972 Semiconductor device and method of manufacturing same
03/12/2002US6355971 Semiconductor switch devices having a region with three distinct zones and their manufacture
03/12/2002US6355964 Microelectronic integrated sensor
03/12/2002US6355963 MOS type semiconductor device having an impurity diffusion layer
03/12/2002US6355961 Structure and method for improved signal processing
03/12/2002US6355957 Semiconductor device having body potential fixing portion and closed-loop gate structure
03/12/2002US6355956 Thin film transistor for protecting source and drain metal lines
03/12/2002US6355954 Device with asymmetrical channel dopant profile
03/12/2002US6355953 Spintronic devices and method for injecting spin polarized electrical currents into semiconductors
03/12/2002US6355951 Field effect semiconductor device
03/12/2002US6355948 Semiconductor integrated circuit device
03/12/2002US6355947 Heterojunction bipolar transistor with band gap graded emitter
03/12/2002US6355944 Silicon carbide LMOSFET with gate reach-through protection
03/12/2002US6355943 Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus
03/12/2002US6355941 Semiconductor device
03/12/2002US6355940 Display device and semiconductor device having laser annealed semiconductor elements
03/12/2002US6355582 Silicon nitride film formation method
03/12/2002US6355579 Method for forming gate oxide film in semiconductor device
03/12/2002US6355561 ALD method to improve surface coverage
03/12/2002US6355548 Forming aluminum nitride layer on semiconductor substrate, annealing to convert aluminum nitride into aluminum oxide, forming conductive layer on aluminum oxide layer, patterning conductive layer and aluminum oxide layer into gate structure
03/12/2002US6355543 Laser annealing for forming shallow source/drain extension for MOS transistor
03/12/2002US6355532 Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET
03/12/2002US6355528 Method to form narrow structure using double-damascene process
03/12/2002US6355525 Method of producing non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions
03/12/2002US6355523 Manufacturing process for making single polysilicon level flash EEPROM cell
03/12/2002US6355522 Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices
03/12/2002US6355512 Method for producing semiconductor device
03/12/2002US6355510 Method for manufacturing a thin film transistor for protecting source and drain metal lines
03/12/2002US6355507 Method of forming overmolded chip scale package and resulting product
03/12/2002US6355181 Method and apparatus for manufacturing a micromechanical device
03/12/2002US6354825 Helical blade fluid compressor having an aluminum alloy rotating member
03/12/2002US6354153 Pressure sensor connection device
03/12/2002CA2286193C Nonvolatile memory
03/07/2002WO2002019484A2 Protective side wall passivation for vcsel chips
03/07/2002WO2002019443A1 Organic field effect transistor, method for structuring an ofet and integrated circuit
03/07/2002WO2002019436A1 Nanoelectronic devices
03/07/2002WO2002019435A1 A spin filter and a memory using such a spin filter
03/07/2002WO2002019434A1 Trench igbt
03/07/2002WO2002019433A2 Trench schottky rectifier
03/07/2002WO2002019432A2 Trench mosfet with structure having low gate charge
03/07/2002WO2002019431A2 Method and device to reduce gate-induced drain leakage (gidl) current in thin gate oxide mosfets
03/07/2002WO2002019429A2 Imaging device and method
03/07/2002WO2002019428A1 Cluster globular semiconductor device
03/07/2002WO2002019421A1 Dram fabricated on a silicon-on-insulator (soi) substrate having bi-level digit lines
03/07/2002WO2002019412A1 A method of forming a bottom-gate thin film transistor
03/07/2002WO2002019402A1 Method for improving the efficiency of epitaxially produced quantum dot semiconductor components
03/07/2002WO2002019396A1 Damascene double gated transistors and related manufacturing methods
03/07/2002WO2002019389A2 Epitaxial template and barrier for the integration of functional thin film heterostructures on silicon
03/07/2002WO2002019383A2 Electron spectrometer
03/07/2002WO2002019363A2 Pre-polycoating of glass substrates
03/07/2002WO2002019036A1 Fabrication of nanoelectronic circuits
03/07/2002WO2002018266A1 Single molecule array on silicon substrate for quantum computer
03/07/2002WO2001059850A3 Structures and methods for improved capacitor cells
03/07/2002US20020029372 Method for fabricating a full depletion type SOI device
03/07/2002US20020028582 Accuracy control of etching using plasma
03/07/2002US20020028568 Semiconductor device and method of manufacturing same
03/07/2002US20020028560 Semiconductor device and manufacturing method
03/07/2002US20020028555 Mosfet with high dielectric constant gate insulator and minimum overlap capacitance
03/07/2002US20020028551 Method for manufacturing semiconductor integrated circuit device
03/07/2002US20020028547 Flash memory programming method
03/07/2002US20020028546 Method of fabricating deep submicron MOS transistor
03/07/2002US20020028544 Semiconductor device and method of manufacturing the same
03/07/2002US20020028543 Process a fabricating a semiconductor device
03/07/2002US20020028541 Dense arrays and charge storage devices, and methods for making same
03/07/2002US20020028529 Method for manufacturing semiconductor pressure sensor having reference pressure chamber
03/07/2002US20020028503 Devices for molecular biological analysis and diagnostics including waveguides
03/07/2002US20020028411 Forming barriers
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