Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2002
02/05/2002US6344674 Flash memory using micro vacuum tube technology
02/05/2002US6344673 Multilayered quantum conducting barrier structures
02/05/2002US6344663 Silicon carbide CMOS devices
02/05/2002US6344660 Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
02/05/2002US6344658 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same
02/05/2002US6344405 Transistors having optimized source-drain structures and methods for making the same
02/05/2002US6344403 Memory device and method for manufacture
02/05/2002US6344397 Semiconductor device having a gate electrode with enhanced electrical characteristics
02/05/2002US6344394 Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer
02/05/2002US6344393 Fully recessed semiconductor method for low power applications
02/05/2002US6344388 Method of manufacturing semiconductor device
02/05/2002US6344386 Method for fabricating semiconductor device including memory cell region and CMOS logic region
02/05/2002US6344382 Methods of forming field effect transistors and related field effect transistor constructions
02/05/2002US6344380 Manufacturing of gate electrodes having silicon of different grain sizes and different surface roughness
02/05/2002US6344379 Semiconductor device with an undulating base region and method therefor
02/05/2002US6344378 Field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors
02/05/2002US6344377 Liquid crystal display and method of manufacturing the same
02/05/2002US6344376 Method of forming a thin film transistor
02/05/2002US6344363 Method of making ferroelectric film with protective cover film against hydrogen and moisture
02/05/2002US6344356 Methods for recombining nucleic acids
02/05/2002US6344116 Monocrystalline three-dimensional integrated-circuit technology
02/05/2002US6344082 Fabrication method of Si nanocrystals
01/2002
01/31/2002WO2002009197A1 Solar cells incorporating light harvesting arrays
01/31/2002WO2002009195A1 Semiconductor arrangement with covered island and contact regions
01/31/2002WO2002009193A1 Assembly comprising a magnetotransistor, method for producing an assembly comprising a magnetotransistor, and method for measuring a magnetic field
01/31/2002WO2002009192A1 Semiconductor device, liquid crystal display device, el display device, semiconductor film producing method, and semiconductor device producing method
01/31/2002WO2002009191A2 Non-volatile memory element
01/31/2002WO2002009190A1 Transistor gate insulator layer incorporating superfine ceramic particles
01/31/2002WO2002009189A1 Method for manufacturing hetero junction bipolar transistor
01/31/2002WO2002009188A1 Strain-engineered, self-assembled, semiconductor quantum dot lattices
01/31/2002WO2002009187A2 Heterojunction tunneling diodes and process for fabricating same
01/31/2002WO2002009184A2 Capacitively coupled dtmos on soi for multiple devices
01/31/2002WO2002009183A1 Schottky diode having increased active surface area and method of fabrication
01/31/2002WO2002009178A2 Semiconductor device and a process for forming the same
01/31/2002WO2002009177A2 Power mosfet and method for forming same using a self-aligned body implant
01/31/2002WO2002009174A1 Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication
01/31/2002WO2002009168A1 Curved chip on rigid support to be mounted removable on an appliance
01/31/2002WO2002009166A1 Method for manufacturing semiconductor device, substrate treater, and substrate treatment system
01/31/2002WO2002009158A2 Semiconductor structure including a magnetic tunnel junction
01/31/2002WO2002009157A2 Alkali earth metal oxide gate insulators
01/31/2002WO2002009084A1 Active matrix display device
01/31/2002WO2002008824A1 Method for manufacturing tft array substrate of liquid crystal display device
01/31/2002WO2002008713A1 Sensor usable in ultra pure and highly corrosive environments
01/31/2002WO2002008500A2 In situ regrowth and purification of crystalline thin films
01/31/2002WO2001057914A3 Process of manufacturing a semiconductor device including a buried channel field effect transistor
01/31/2002WO2001043198A3 Source/drain-on-insulator (s/doi) field effect transistor using silicon nitride and silicon oxide and method of fabrication
01/31/2002WO2001020656A3 Dmos transistor having a trench gate electrode and method of making the same
01/31/2002WO2000008691A9 Zinc oxide films containing p-type dopant and process for preparing same
01/31/2002US20020013682 Method and system for improving a transistor model
01/31/2002US20020013114 Semiconductor device and method of manufacturing the same
01/31/2002US20020013067 Semiconductor device manufacturing method
01/31/2002US20020013061 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
01/31/2002US20020013038 Semiconductor device and production thereof
01/31/2002US20020013037 Two-dimensionally arrayed quantum device
01/31/2002US20020013033 Semiconductor integrated circuit having an integrated resistance region
01/31/2002US20020013032 Process to fabricate a novel source-drain extension
01/31/2002US20020013030 Insulated gate semiconductor device with high minority carrier injection and low on-voltage by enlarged pn-junction area
01/31/2002US20020013029 High voltage device having polysilicon region in trench and fabricating method thereof
01/31/2002US20020013022 Method of manufacturing a semiconductor device
01/31/2002US20020013021 Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
01/31/2002US20020013020 Thin film transistor array substrate for liquid crystal display and method of fabricating the same
01/31/2002US20020013011 Methods for making electrooptical device and driving substrate therefor
01/31/2002US20020012883 Overcoating polysilicon layer with photoresist and gate electrode
01/31/2002US20020012745 Flash memory and methods of writing and erasing the same as well as a method of forming the same
01/31/2002US20020012274 Method of erasing a flash memory cell
01/31/2002US20020012273 Nonvolatile semiconductor memory device including a circuit for providing a boosted potential
01/31/2002US20020012272 Semiconductor device
01/31/2002US20020012271 Static NVRAM with ultra thin tunnel oxides
01/31/2002US20020012270 Semiconductor memory device for effecting erasing operation in block unit
01/31/2002US20020012264 Ferroelectric non-volatile memory device
01/31/2002US20020012080 Liquid crystal display apparatus
01/31/2002US20020012057 MOS sensor and drive method thereof
01/31/2002US20020011983 Semiconductor device
01/31/2002US20020011981 Display device
01/31/2002US20020011973 Display device
01/31/2002US20020011874 Semiconductor switch having a voltage detection function
01/31/2002US20020011827 Fabricating pixel electrode on thin film transistor side of substrate, so major part of each transistor is buried under electrode, allowing for active matrix addressing of polymeric electroluminescent pixels and maintaining high aperture ratio
01/31/2002US20020011676 Semiconductor structure having stacked semiconductor devices
01/31/2002US20020011674 Integrated power circuits with distributed bonding and current flow
01/31/2002US20020011665 Spherical semiconductor device and method for fabricating the same
01/31/2002US20020011652 Wafer thickness compensation for interchip planarity
01/31/2002US20020011649 Fast bipolar transistor
01/31/2002US20020011648 Semiconductor device and method for making the same
01/31/2002US20020011647 Current-limiting device
01/31/2002US20020011644 Semiconductor device for reducing junction leakage current and narrow width effect, and fabrication method thereof
01/31/2002US20020011637 Sensor
01/31/2002US20020011636 Semiconductor device, manufacturing method thereof, and CMOS transistor
01/31/2002US20020011635 Semiconductor device and production method thereof
01/31/2002US20020011632 Static semiconductor memory device
01/31/2002US20020011631 Self-aligned metal silicide
01/31/2002US20020011630 Semiconductor device having semiconductor resistance element and fabrication method thereof
01/31/2002US20020011629 Method to form shallow junction transistors while eliminating shorts due to junction spiking
01/31/2002US20020011628 Semiconductor device
01/31/2002US20020011627 Thin film transistor having enhanced field mobility
01/31/2002US20020011626 RESURF LDMOS integrated structure
01/31/2002US20020011625 Scalable tunnel oxide window with no isolation edges
01/31/2002US20020011622 Insulated channel field effect transistor with an electric field terminal region
01/31/2002US20020011621 Semiconductor nonvolatile memory with low programming voltage
01/31/2002US20020011617 Semiconductor device and method of producing the same
01/31/2002US20020011615 Ferroelectric memory device and method for producing the same