| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/18/2002 | WO2002031884A1 Nonplanar semiconductor devices having closed region of spatial charge |
| 04/18/2002 | WO2002031883A2 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode |
| 04/18/2002 | WO2002031880A2 Trench dmos transistor with embedded trench schottky rectifier |
| 04/18/2002 | WO2002031875A2 Dielectric interface films and methods therefor |
| 04/18/2002 | WO2002007201A3 Method for etching trenches for the fabrication of semiconductor devices |
| 04/18/2002 | WO2002003472A3 Aerosol silicon nanoparticles for use in semiconductor device fabrication |
| 04/18/2002 | WO2002001643A3 Soft recovery power diode and related method |
| 04/18/2002 | WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/18/2002 | WO2001095396A3 Double-implant high performance varactor and method for manufacturing same |
| 04/18/2002 | WO2001071804A3 Lateral asymmetric lightly doped drain mosfet |
| 04/18/2002 | WO2001059814A3 Semiconductor structure |
| 04/18/2002 | US20020046318 Flash eeprom system |
| 04/18/2002 | US20020045360 Semiconductor device and method of manufacturing thereof |
| 04/18/2002 | US20020045358 Fabrication of DRAM and other semiconductor devices with an insulating film using a wet rapid thermal oxidation process |
| 04/18/2002 | US20020045355 Method of manufacturing a semiconductor device having a silicide layer |
| 04/18/2002 | US20020045342 Semiconductor structure having a doped conductive layer |
| 04/18/2002 | US20020045339 Manufacture method for semiconductor with small variation in MOS threshold voltage |
| 04/18/2002 | US20020045332 Method of fabricating a semiconductor device using a damascene metal gate |
| 04/18/2002 | US20020045327 Method and apparatus for separating sample |
| 04/18/2002 | US20020045326 Methods for making semiconductor devices |
| 04/18/2002 | US20020045321 Process for fabricating a semiconductor component |
| 04/18/2002 | US20020045320 Nonvolatile memory device and method for manufacturing the same |
| 04/18/2002 | US20020045318 Method for manufacturing mos transistor |
| 04/18/2002 | US20020045317 Source/drain regions are formed with two regions of an epitaxial silicon film formed on the surface of the substrate and a region formed by ion implantation and thermal diffusion of impurities into the substrate |
| 04/18/2002 | US20020045316 Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memiry, and related integrated device |
| 04/18/2002 | US20020045315 Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
| 04/18/2002 | US20020045307 Method of forming a silicide layer using metallic impurities and pre-amorphization |
| 04/18/2002 | US20020045303 Method of manufacturing a flash memory device |
| 04/18/2002 | US20020045302 Manufacturing method of semiconductor integrated circuit |
| 04/18/2002 | US20020045300 Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes |
| 04/18/2002 | US20020045299 Method of forming a bottom-gate thin film transistor |
| 04/18/2002 | US20020045298 Method for forming semiconductor device |
| 04/18/2002 | US20020045297 Membrane 3D IC fabrication |
| 04/18/2002 | US20020045296 Semiconductor device |
| 04/18/2002 | US20020045295 Detectors |
| 04/18/2002 | US20020045290 Flip chip and conventional stack |
| 04/18/2002 | US20020045280 System for and method of designing and manufacturing a semiconductor device |
| 04/18/2002 | US20020045107 Reticle for creating resist-filled vias in a dual damascene process |
| 04/18/2002 | US20020044228 Array substrate for a liquid crystal display and method for fabricating thereof |
| 04/18/2002 | US20020044227 In-plane switching type liquid crystal display device and a method for manufacturing the same |
| 04/18/2002 | US20020044208 Area sensor and display apparatus provided with an area sensor |
| 04/18/2002 | US20020044124 Display panel, display panel inspection method, and display panel manufacturing method |
| 04/18/2002 | US20020044120 Liquid crystal display device having wiring layer and semiconductor layer crossing each other |
| 04/18/2002 | US20020044011 Method to reduce timing skews in i/o circuits and clock drivers caused by fabrication process tolerances |
| 04/18/2002 | US20020043974 Tunneling magnetoresistive element, and magnetic sensor using the same |
| 04/18/2002 | US20020043699 Semiconductor device |
| 04/18/2002 | US20020043697 Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss |
| 04/18/2002 | US20020043694 Semiconductor raised source-drain structure |
| 04/18/2002 | US20020043692 Semiconductor storage device |
| 04/18/2002 | US20020043691 Method for fabrication of field effect transistor |
| 04/18/2002 | US20020043689 Surface-channel metal-oxide semiconductor transistors, their complementary field-effect transistors and method of producing the same |
| 04/18/2002 | US20020043688 Integrated circuit provided with overvoltage protection and method for manufacture thereof |
| 04/18/2002 | US20020043686 Silicon-on-insulator chip having an isolation barrier for reliability |
| 04/18/2002 | US20020043684 Insulated gate field effect semiconductor device |
| 04/18/2002 | US20020043683 Semiconductor device and its manufacturing method |
| 04/18/2002 | US20020043682 Non-volatile memory and semiconductor device |
| 04/18/2002 | US20020043680 Semiconductor integrated circuit device and process for manufacturing the same |
| 04/18/2002 | US20020043677 Ferroelectric capacitor and method for fabricating the same |
| 04/18/2002 | US20020043676 Semiconductor device and method for driving the same |
| 04/18/2002 | US20020043672 Semiconductor device with a thin-film sensing area and device fabrication method |
| 04/18/2002 | US20020043668 Semiconductor integrated circuit device and method of producing the same |
| 04/18/2002 | US20020043667 Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device |
| 04/18/2002 | US20020043665 Semiconductor device and a method of manufacturing the same |
| 04/18/2002 | US20020043662 Semiconductor device |
| 04/18/2002 | US20020043660 Semiconductor device and fabrication method therefor |
| 04/18/2002 | US20020043659 Device and manufacturing method for device including function block, and light transmitting device |
| 04/18/2002 | US20020043561 Method of and system for producing digital images of objects with subtantially reduced speckle-noise patterns by illuminating said objects with spatially and/or temporally coherent-reduced planar laser illumination |
| 04/18/2002 | DE10147124A1 Pressure sensor includes pressing element comprising contact and non-contact portions which contacts and does not contacts with metal diaphragm respectively |
| 04/18/2002 | DE10146574A1 Herstellungsverfahren eines Mikromaterialstücks Process for manufacturing a micro-patch |
| 04/18/2002 | DE10144700A1 Non-volatile semiconductor memory arrangement e.g. MONOS- and NMOS-types, has memory zone regions overlapping ends of channel forming zone |
| 04/18/2002 | DE10125004A1 Halbleiter-Bauelement Semiconductor component |
| 04/18/2002 | DE10051315A1 Micromechanical component used as an acceleration or rotation sensor in vehicles has functional components hanging above a substrate in a functional layer |
| 04/18/2002 | DE10051049A1 Semiconductor substrate made from silicon carbide has a p-doped layer, a silicon dioxide layer grown by depositing from the gas phase onto a p-doped silicon carbide layer, and several contact structures applied using photolithography |
| 04/18/2002 | DE10050799A1 Semiconductor substrate made from silicon carbide has an n-doped layer, a silicon dioxide layer grown by depositing from the gas phase onto an n-doped silicon carbide layer, and several contact structures applied using photolithography |
| 04/18/2002 | DE10049861A1 Semiconductor element has doped areas embedded in surface of semiconductor body forming pattern, which is not adjusted to pattern of semiconductor base body |
| 04/18/2002 | DE10048437A1 Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper A method of manufacturing a body of semiconductor material with reduced mean free path length and produced by the method body |
| 04/18/2002 | DE10048165A1 Power semiconductor component used as an IGBT comprises a body with a region of lower doping concentration limited by a region of higher concentration which contains a stop zone |
| 04/18/2002 | DE10047168A1 Steuerbares Halbleiterbauelement Controllable semiconductor component |
| 04/18/2002 | DE10047133A1 Doped semiconductor material body e.g. for power semiconductors, has extended minority carrier life-time in relatively lower pressure region compared to that in relatively higher pressure region |
| 04/17/2002 | EP1198011A1 Semiconductor device including mos field-effect transistor |
| 04/17/2002 | EP1198010A1 Power semiconductor device comprising a lateral DMOS transistor |
| 04/17/2002 | EP1198009A2 SiGe transistor, varactor and p-i-n element for BiCMOS circuits and ESD networks |
| 04/17/2002 | EP1198008A1 Information processing structure |
| 04/17/2002 | EP1198007A1 Improved bipolar junction transistor |
| 04/17/2002 | EP1198006A2 Compound semiconductor device and method for manufacturing |
| 04/17/2002 | EP1197992A1 Semiconductor wafer and production method therefor |
| 04/17/2002 | EP1197987A2 Method and apparatus for separating sample |
| 04/17/2002 | EP1196814A1 Use of a storage capacitor to enhance the performance of an active matrix driven electronic display |
| 04/17/2002 | CN1345474A Semiconductors structures using group III-nitride quaternary material system with reduced phase separation and method of fabrication |
| 04/17/2002 | CN1345466A Nonvolatile memory |
| 04/17/2002 | CN1345448A Device with embedded flash and EEPROM memories |
| 04/17/2002 | CN1345093A Storage device, its manufacture and integrated circuit |
| 04/17/2002 | CN1345092A Nonvolatile semiconductor storage and its manufacture |
| 04/17/2002 | CN1083162C Bipolar silicon-on-insulator transistor with increased breakdown voltage |
| 04/17/2002 | CN1083159C Method for manufacturing semiconductor device with stable bipolar transistor and schottky diode |
| 04/16/2002 | US6373764 Semiconductor memory device allowing static-charge tolerance test between bit lines |
| 04/16/2002 | US6373747 Flash EEprom system |
| 04/16/2002 | US6373746 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells |
| 04/16/2002 | US6373668 Semiconductor device |
| 04/16/2002 | US6373546 Structure of a liquid crystal display and the method of manufacturing the same |