| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/27/2002 | CN1079987C Method for producing semiconductor device |
| 02/27/2002 | CN1079955C Manufacturing method of display device |
| 02/26/2002 | US6351428 Programmable low voltage decode circuits with ultra-thin tunnel oxides |
| 02/26/2002 | US6351411 Memory using insulator traps |
| 02/26/2002 | US6351027 Chip-mounted enclosure |
| 02/26/2002 | US6351024 Power semiconductor diode |
| 02/26/2002 | US6351023 Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
| 02/26/2002 | US6351020 Linear capacitor structure in a CMOS process |
| 02/26/2002 | US6351018 Monolithically integrated trench MOSFET and Schottky diode |
| 02/26/2002 | US6351015 Transistor device of MOS structure in which variation of output impedance resulting from manufacturing error is reduced |
| 02/26/2002 | US6351014 Semiconductor device having different field oxide sizes |
| 02/26/2002 | US6351013 Low-K sub spacer pocket formation for gate capacitance reduction |
| 02/26/2002 | US6351009 MOS-gated device having a buried gate and process for forming same |
| 02/26/2002 | US6351008 Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions |
| 02/26/2002 | US6351007 Quantum thin line producing method and semiconductor device employing the quantum thin line |
| 02/26/2002 | US6351006 Ferroelectric capacitor with means to prevent deterioration |
| 02/26/2002 | US6351004 Tunneling transistor applicable to nonvolatile memory |
| 02/26/2002 | US6351000 Semiconductor having a heterojunction formed between a plurality of semiconductor layers |
| 02/26/2002 | US6350997 Semiconductor light emitting element |
| 02/26/2002 | US6350995 Thin film transistor and manufacturing method therefore |
| 02/26/2002 | US6350993 High speed composite p-channel Si/SiGe heterostructure for field effect devices |
| 02/26/2002 | US6350704 Heating, drying and/or pyrolyzing oxide and carbon sources; transforming into porous glass dielectric |
| 02/26/2002 | US6350685 Method for manufacturing semiconductor devices |
| 02/26/2002 | US6350684 Graded/stepped silicide process to improve MOS transistor |
| 02/26/2002 | US6350673 Method for decreasing CHC degradation |
| 02/26/2002 | US6350652 Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regions |
| 02/26/2002 | US6350641 Method of increasing the depth of lightly doping in a high voltage device |
| 02/26/2002 | US6350637 Method of fabrication of a no-field MOS transistor |
| 02/26/2002 | US6350311 Method for forming an epitaxial silicon-germanium layer |
| 02/21/2002 | WO2002015293A2 Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses |
| 02/21/2002 | WO2002015285A1 Metal sulfide semiconductor transistor devices |
| 02/21/2002 | WO2002015283A2 Metal sulfide-oxide semiconductor transistor devices |
| 02/21/2002 | WO2002015280A1 Thick oxide layer on bottom of trench structure in silicon |
| 02/21/2002 | WO2002015279A1 A semiconductor isotope superlattice |
| 02/21/2002 | WO2002015278A2 Multigate semiconductor device and method of fabrication |
| 02/21/2002 | WO2002015277A2 Dense arrays and charge storage devices, and methods for making same |
| 02/21/2002 | WO2002015276A2 Memory cell, memory cell device and method for the production thereof |
| 02/21/2002 | WO2002015254A2 Method of manufacturing a trench-gate semiconductor device and corresponding device |
| 02/21/2002 | WO2002015252A2 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device |
| 02/21/2002 | WO2002015240A1 Directed assembly of nanometer-scale molecular devices |
| 02/21/2002 | WO2002015233A2 Integrated transistor devices |
| 02/21/2002 | WO2002015190A2 Non-volatile memory, method of manufacture and programming |
| 02/21/2002 | WO2002014815A1 Coulomb blockade thermometer |
| 02/21/2002 | WO2001084616A3 Semiconductor device using a barrier layer |
| 02/21/2002 | WO2001084552A3 Programming of nonvolatile memory cells |
| 02/21/2002 | WO2001069685A3 Trench-gate semiconductor devices |
| 02/21/2002 | WO2001061762A3 Punch-through diode and method of manufacturing the same |
| 02/21/2002 | WO2001051931A3 Accelerometer |
| 02/21/2002 | WO2001029899A3 Semiconductor pn-junction diode, method of making the same and electronic circuit comprising the same |
| 02/21/2002 | WO2000074139A9 A single polysilicon flash eeprom and method for making same |
| 02/21/2002 | US20020022376 Method for fabricating gate oxide film of semiconductor device |
| 02/21/2002 | US20020022366 Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow Junctions |
| 02/21/2002 | US20020022364 Method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device |
| 02/21/2002 | US20020022355 Semiconductor device and method for fabricating the same |
| 02/21/2002 | US20020022354 Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor |
| 02/21/2002 | US20020022352 Method for manufacturing semiconductor device with power semiconductor element and diode |
| 02/21/2002 | US20020022350 Fabricating a thin film transistor using a crystalline semiconductor film obtained using crystallization catalyst |
| 02/21/2002 | US20020022346 Gettering regions and methods of forming gettering regions within a semiconductor wafer |
| 02/21/2002 | US20020022330 Bipolar transistor and method for fabricating the same |
| 02/21/2002 | US20020022327 Method for fabricating a semiconductor device having an elevated source/drain scheme |
| 02/21/2002 | US20020022325 Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance mosfet |
| 02/21/2002 | US20020022324 Manufacture of trench-gate semiconductor devices |
| 02/21/2002 | US20020022322 Triple self-aligned split-gate non-volatile memory device |
| 02/21/2002 | US20020022308 Method of preventing semiconductor layers from bending and seminconductor device formed thereby |
| 02/21/2002 | US20020022307 Method of fabricating a thin film transistor and manufacturing equipment |
| 02/21/2002 | US20020022306 Method for setting the breakover voltage of a thyristor |
| 02/21/2002 | US20020022296 Method of manufacturing a charge-coupled image sensor |
| 02/21/2002 | US20020022293 Charge transfer device and solid image pickup apparatus using the same |
| 02/21/2002 | US20020022291 Production method for integrated angular speed sensor device |
| 02/21/2002 | US20020022284 Visible light emitting diodes fabricated from soluble semiconducting polymers |
| 02/21/2002 | US20020022279 Ferroelectric memory device and manufacturing method thereof |
| 02/21/2002 | US20020022278 Capacitor utilizing C-axis oriented lead germanate film |
| 02/21/2002 | US20020021589 Single electron resistor memory device and method |
| 02/21/2002 | US20020021587 Nonvolatile semiconductor memory |
| 02/21/2002 | US20020021585 Nonvolatile semiconductor memory device and semiconductor integrated circuit |
| 02/21/2002 | US20020021381 Liquid crystal display and fabricating method thereof |
| 02/21/2002 | US20020021378 Electro-optical device |
| 02/21/2002 | US20020021375 Display panel with structure for suppressing effects of electrostatic charge |
| 02/21/2002 | US20020021235 D/a conversion circuit and semiconductor device |
| 02/21/2002 | US20020020893 Monolithic assembly of semiconductor components including a fast diode |
| 02/21/2002 | US20020020891 High voltage mos devices with high gated-diode breakdown voltage and punch-through voltage |
| 02/21/2002 | US20020020882 Nonvolatile memory and semiconductor device |
| 02/21/2002 | US20020020881 Semiconductor device having electrostatic protection circuit |
| 02/21/2002 | US20020020878 Semiconductor integrated circuit and method of manufacturing the same |
| 02/21/2002 | US20020020876 Semiconductor device and method for manufacturing the same |
| 02/21/2002 | US20020020875 Semiconductor device and manufacturing method therefor |
| 02/21/2002 | US20020020873 Power MOS device with asymmetrical channel structure for enhanced linear operation capability |
| 02/21/2002 | US20020020871 Static NVRAM with ultra thin tunnel oxides |
| 02/21/2002 | US20020020870 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 02/21/2002 | US20020020866 Method for manufacturing a capacitor having a two-layer lower electrode |
| 02/21/2002 | US20020020861 Semiconductor device and method of fabricating the same |
| 02/21/2002 | US20020020856 Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
| 02/21/2002 | US20020020851 Heterobipolar transistor and a method of forming a SiGeC mixed crystal layer |
| 02/21/2002 | US20020020849 J-FET semiconductor configuration |
| 02/21/2002 | US20020020841 Carbon nanotube device |
| 02/21/2002 | US20020020840 Semiconductor device and manufacturing method thereof |
| 02/21/2002 | US20020020839 Semiconductor device and method for manufacturing the same |
| 02/21/2002 | US20020020838 Array substrate for liquid crystal display device and the fabrication method of the same |
| 02/21/2002 | EP1145329A3 Semiconductor pn-junction diode, method of making the same and electronic circuit comprising the same |
| 02/21/2002 | DE10111722A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |