| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/10/2002 | WO2002003469A1 Power semiconductor component and method for producing the same |
| 01/10/2002 | WO2002003468A2 A novel capacitively coupled dtmos on soi |
| 01/10/2002 | WO2002003450A2 Automated determination and display of the physical location of a failed cell in an array of memory cells |
| 01/10/2002 | WO2002003430A2 Aerosol process for fabricating discontinuous floating gate microelectronic devices |
| 01/10/2002 | WO2002003043A1 Capacity type pressure sensor and method of manufacturing the pressure sensor |
| 01/10/2002 | WO2002002458A1 Method for production of a semiconductor component and a semiconductor component produced by said method |
| 01/10/2002 | WO2001069654A3 Semiconductor device with light shield and corresponding etching method |
| 01/10/2002 | WO2001059844A3 Semiconductor device with high reverse breakdown voltage and method of manufacturing the same |
| 01/10/2002 | WO2001043187A3 Removal of silicon oxynitride material using a wet chemical process after gate etch processing |
| 01/10/2002 | WO2001031685A3 InPSb/InAs BJT DEVICE AND METHOD OF MAKING |
| 01/10/2002 | US20020004875 Memory device |
| 01/10/2002 | US20020004315 Method for fabricating semiconductor integrated circuit device |
| 01/10/2002 | US20020004314 Semiconductor device and method for manufacturing the same |
| 01/10/2002 | US20020004294 Dopant diffusion-retarding barrier region formed within polysilicon gate layer |
| 01/10/2002 | US20020004291 Method of manufacturing a semiconductor device |
| 01/10/2002 | US20020004290 Formation of 5F2 cell with partially vertical transistor and gate conductor aligned buried strap with raised shallow trench isolation region |
| 01/10/2002 | US20020004289 Semiconductor device manufacturing method |
| 01/10/2002 | US20020004274 Method of fabricating semiconductor device |
| 01/10/2002 | US20020004263 Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device |
| 01/10/2002 | US20020004262 Using mixture of silane and hydrogen; catalytic crystallization |
| 01/10/2002 | US20020004261 Manufacturing method for semiconductor device |
| 01/10/2002 | US20020004260 Thin film transistor manufacturing method and thin film transistor |
| 01/10/2002 | US20020004249 Semiconductor memory device and manufacturing method thereof |
| 01/10/2002 | US20020004248 Ferroelectric memory devices including patterned conductive layers |
| 01/10/2002 | US20020004108 Active matrix liquid crystal display device and liquid crystal material |
| 01/10/2002 | US20020003744 Programmable low voltage decode circuits with ultra-thin tunnel oxides |
| 01/10/2002 | US20020003724 Boosted voltage generating circuit and semiconductor memory device having the same |
| 01/10/2002 | US20020003611 Method of manufacturing solid-state image pickup device |
| 01/10/2002 | US20020003587 Active matrix substrate and manufacturing method thereof |
| 01/10/2002 | US20020003305 Semiconductor integrated circuit device including an interlayer insulating film formed under a bonding pad and arranged to prevent peeling of the bonding pad |
| 01/10/2002 | US20020003290 Semiconductor devices and methods for manufacturing the same |
| 01/10/2002 | US20020003289 Semiconductor devices and methods for manufacturing the same |
| 01/10/2002 | US20020003288 Semiconductor apparatus and method for manufacturing the same |
| 01/10/2002 | US20020003287 Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method |
| 01/10/2002 | US20020003286 Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process |
| 01/10/2002 | US20020003285 Semiconductor device and process of production of same |
| 01/10/2002 | US20020003276 Semiconductor device and method of manufacturing same |
| 01/10/2002 | US20020003273 Igfet with silicide contact on ultra-thin gate |
| 01/10/2002 | US20020003271 Field-effect transistor |
| 01/10/2002 | US20020003269 Semiconductor memory and method of producing the same |
| 01/10/2002 | US20020003268 A device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gates |
| 01/10/2002 | US20020003267 Gate electrode having agglomeration preventing layer on metal silicide layer, and method for forming the same |
| 01/10/2002 | US20020003264 Method to form shallow junction transistors while eliminating shorts due to junction spiking |
| 01/10/2002 | US20020003263 Semiconductor device having MOS transistor for coupling two signal lines |
| 01/10/2002 | US20020003262 Semiconductor device and method for fabricating the same |
| 01/10/2002 | US20020003260 SOI type MOS element and manufacturing method thereof |
| 01/10/2002 | US20020003259 Semiconductor device and method of fabricating same |
| 01/10/2002 | US20020003258 Method of forming a thin gate dielectric layers |
| 01/10/2002 | US20020003257 Mosfet device |
| 01/10/2002 | US20020003256 MOS semiconductor device and method of manufacturing the same |
| 01/10/2002 | US20020003255 Semiconductor device and method for fabricating the same |
| 01/10/2002 | US20020003253 Nonvolatile semiconductor memory device and its manufacturing method |
| 01/10/2002 | US20020003252 Flash memory circuit with with resistance to disturb effect |
| 01/10/2002 | US20020003250 Field effect-controlled, vertical semiconductor component |
| 01/10/2002 | US20020003245 Compound semiconductor device and method of manufacturing the same |
| 01/10/2002 | US20020003237 Minority carrier semiconductor devices with improved reliabilty |
| 01/10/2002 | US20020003048 Metal interconnections and active matrix substrate using the same |
| 01/10/2002 | US20020002864 Accelerometer |
| 01/10/2002 | DE10131697A1 Pressure sensor has conductive elevations that are arranged in between opposing surfaces of shaft and sensor chip, thereby connecting sensor chip to guides |
| 01/10/2002 | DE10130713A1 Semiconductor acceleration sensor chip comprises peripheral grooves formed on substrate surface |
| 01/10/2002 | DE10119775A1 Halbleitervorrichtung, Verfahren zu deren Herstellung und Widerstand A semiconductor device, method for their preparation and resistance |
| 01/09/2002 | EP1170804A2 Trench capacitor with insulating collar and corresponding manufacturing process |
| 01/09/2002 | EP1170803A2 Trench gate MOSFET and method of making the same |
| 01/09/2002 | EP1170802A2 Semiconductor gate with semi-insulating diffusion barrier |
| 01/09/2002 | EP1170800A2 Nonvolatile semiconductor memory device, process of manufacturing the same and method of operating the same |
| 01/09/2002 | EP1170799A2 Electronic device and method of manufacture of an electronic device |
| 01/09/2002 | EP1170595A2 External force detecting sensor |
| 01/09/2002 | EP1169896A1 Low stress die attachment |
| 01/09/2002 | EP1169740A1 Capacitor for analog circuit, and manufacturing method thereof |
| 01/09/2002 | EP1169739A1 Semiconductor device with a diode, and method of manufacturing such a device |
| 01/09/2002 | EP1169738A1 Semiconductor device with voltage divider for increased reverse blocking voltage |
| 01/09/2002 | EP1169737A1 High speed ge channel heterostructures for field effect devices |
| 01/09/2002 | EP1169734A1 Semiconductor device with deep substrate contacts |
| 01/09/2002 | EP1169732A1 Method and device for treating thin layers of amorphous silicon |
| 01/09/2002 | EP1169657A1 Calibration of sensors |
| 01/09/2002 | EP1169650A1 Different sacrificial layer thickness under fixed and movable electrodes (capacitive acceleration sensor) |
| 01/09/2002 | CN1330412A Vertical nanometer size transistor using carbon monometer tube and manufacturing method thereof |
| 01/09/2002 | CN1330397A Method and device for manufacturing active matrix device containing top grid type TFT |
| 01/09/2002 | CN1330393A Semiconductor device and manufacturing method for semiconductor device |
| 01/08/2002 | US6337825 Semiconductor memory device |
| 01/08/2002 | US6337731 Electro-optical device and method of driving the same |
| 01/08/2002 | US6337520 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof |
| 01/08/2002 | US6337508 Transistor with a quantum-wave interference layer |
| 01/08/2002 | US6337505 Semiconductor device and method for fabricating the same |
| 01/08/2002 | US6337504 Insulated gate transistor with leakage current prevention feature |
| 01/08/2002 | US6337501 Semiconductor device having bipolar transistor and MOS transistor |
| 01/08/2002 | US6337500 Semiconductor device and method for fabricating the same |
| 01/08/2002 | US6337499 Semiconductor component |
| 01/08/2002 | US6337498 Semiconductor device having directionally balanced gates and manufacturing method |
| 01/08/2002 | US6337497 Common source transistor capacitor stack |
| 01/08/2002 | US6337496 Ferroelectric capacitor |
| 01/08/2002 | US6337494 Super self-aligned bipolar transistor and method for fabricating thereof |
| 01/08/2002 | US6337293 Method of forming a quantum memory element having a film of amorphous silicon |
| 01/08/2002 | US6337292 Vapor deposition of silicon oxide layer |
| 01/08/2002 | US6337289 Method and apparatus for integrating a metal nitride film in a semiconductor device |
| 01/08/2002 | US6337287 High speed, high bandwidth, high density nonvolatile memory system |
| 01/08/2002 | US6337275 Method for forming a self aligned contact in a semiconductor device |
| 01/08/2002 | US6337272 Depositing cobalt on silicon semiconductor substrate by sputtering while heating |
| 01/08/2002 | US6337267 Method for fabricating a semiconductor memory device and the structure thereof |
| 01/08/2002 | US6337264 Simplified method of patterning polysilicon gate in a semiconductor device including an oxime layer as a mask |