Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2002
04/25/2002US20020047125 SiC semicoductor device
04/25/2002US20020047124 Semiconductor element
04/25/2002US20020047123 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
04/25/2002US20020047122 Polycrystalline silicon layer, its growth method and semiconductor device
04/25/2002US20020047119 Image-pickup semiconductor device having a lens, a light-receiving element and a flexible substrate therebetween with a shading plate blocking undesired light rays
04/25/2002US20020047118 Method for producing semiconductor device
04/25/2002US20020047113 Semiconductor device
04/25/2002US20020047111 Semiconductor device having a ferroelectric capacitor with tensile stress properties
04/25/2002US20020046986 Selective ratios do not cause shape defects
04/25/2002US20020046874 Thin film metal barrier for electrical interconnections
04/25/2002US20020046765 Photovoltaic cell and process for producing the same
04/25/2002DE10151376A1 Dynamic semiconductor acceleration sensor for automotive airbag release has two movable electrodes in cruciform arrangement to form condensers
04/25/2002DE10137369A1 Halbleitersubstrat, Feldeffekt-Transistor, Verfahren zur Bildung einer SiGe-Schicht und Verfahren zur Bildung einer gespannten Si-Schicht unter Verwendung derselben, und Verfahren zur Herstellung eines Feldeffekt-Transistors Semiconductor substrate, the field effect transistor, method of forming a SiGe layer and method for forming a strained Si layer using the same, and method for producing a field effect transistor
04/25/2002DE10050044A1 Process for forming a gate on a semiconductor substrate used in the production of a MOST, forming a gate oxide layer on the substrate followed by a polysilicon layer, a tungsten silicide layer and a nitride blocking layer
04/25/2002DE10047152A1 Hochvolt-Diode und Verfahren zu deren Herstellung High-voltage diode and methods for their preparation
04/24/2002EP1199754A2 Photovoltaic cell and process for producing the same
04/24/2002EP1199752A1 Multiple composite one-dimensional structural body and functional material
04/24/2002EP1199742A2 Multi-layered polysilicon gate process
04/24/2002EP1198852A1 Preferred methods for producing electrical circuit elements used to control an electronic display
04/24/2002EP1198851A1 Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device
04/24/2002EP1198844A1 Diode comprising a metal semiconductor contact and a method for the production thereof
04/24/2002EP1198843A1 Power semiconductor devices having an insulating layer formed in a trench
04/24/2002EP1198842A2 Trench-gate semiconductor devices
04/24/2002EP1198841A1 Electric semiconductor element with a contact hole
04/24/2002EP1198840A1 Method for making a device comprising layers of planes of quantum dots
04/24/2002EP1198839A1 Semiconductor element
04/24/2002EP1198834A1 New method of forming select gate to improve reliability and performance for nand type flash memory devices
04/24/2002EP1198830A2 Process of manufacturing a semiconductor device including a buried channel field effect transistor
04/24/2002CN1346515A Methods for packaging integrated circuit devices including cavities adjacent active regions and related structures
04/24/2002CN1346514A Electrostatic discharge protection of integrated circuits
04/24/2002CN1346153A 半导体器件 Semiconductor devices
04/24/2002CN1346152A Thin-film transistor and semiconductor
04/24/2002CN1346132A Non-volatile semiconductor memory and system
04/24/2002CN1083617C Semconductor device producing method
04/24/2002CN1083607C 半导体存储器 Semiconductor memory
04/23/2002US6377597 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
04/23/2002US6377490 Nonvolatile semiconductor memory device and method for driving the same
04/23/2002US6377485 Multi-value semiconductor memory device and reading method thereof
04/23/2002US6377323 Liquid crystal display device and method of making same
04/23/2002US6377322 Liquid crystal display device having spontaneous polarization and no compensating capacitors
04/23/2002US6377115 Integrated potentiometer and corresponding fabrication process
04/23/2002US6377070 In-service programmable logic arrays with ultra thin vertical body transistors
04/23/2002US6376921 Semiconductor device, method for fabricating the semiconductor device, lead frame and method for producing the lead frame
04/23/2002US6376898 Bipolar transistor layout with minimized area and improved heat dissipation
04/23/2002US6376897 Lateral bipolar transistor formed on an insulating layer
04/23/2002US6376891 High voltage breakdown isolation semiconductor device and manufacturing process for making the device
04/23/2002US6376890 High-voltage edge termination for planar structures
04/23/2002US6376888 Semiconductor device and method of manufacturing the same
04/23/2002US6376886 Field effect transistor having comb-shaped lead-out electrodes capable of reducing parasitic capacitance therebetween
04/23/2002US6376885 Semiconductor structure with metal silicide and method for fabricated the structure
04/23/2002US6376881 Protective element formed in an SOI substrate for preventing a breakdown in an oxide film located below a diffused resistor
04/23/2002US6376880 High-speed lateral bipolar device in SOI process
04/23/2002US6376878 MOS-gated devices with alternating zones of conductivity
04/23/2002US6376876 NAND-type flash memory devices and methods of fabricating the same
04/23/2002US6376875 Semiconductor component with compensation implantation
04/23/2002US6376870 Low voltage transistors with increased breakdown voltage to substrate
04/23/2002US6376868 Multi-layered gate for a CMOS imager
04/23/2002US6376867 Heterojunction bipolar transistor with reduced thermal resistance
04/23/2002US6376862 Semiconductor device and its manufacturing method
04/23/2002US6376861 Thin film transistor and method for fabricating the same
04/23/2002US6376860 Silicon on an insulating surface; pair of impurity regions; portion where a metal containing material has been applied to semiconductor film directly formed in one of said regions; crystals extend parallel to insulating surface from portions
04/23/2002US6376859 Variable porosity porous silicon isolation
04/23/2002US6376858 Resonant tunneling diode with adjusted effective masses
04/23/2002US6376373 Method of manufacturing a semiconductor device
04/23/2002US6376372 Approaches for mitigating the narrow poly-line effect in silicide formation
04/23/2002US6376350 Method of forming low resistance gate electrode
04/23/2002US6376349 Forming dielectric; then amorphous metal; siliciding
04/23/2002US6376348 Reliable polycide gate stack with reduced sheet resistance and thickness
04/23/2002US6376347 Method of making gate wiring layer over semiconductor substrate
04/23/2002US6376344 Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device
04/23/2002US6376340 Methods for forming polycrystalline silicon film
04/23/2002US6376333 Method of manufacturing flexible display with transfer from auxiliary substrate
04/23/2002US6376331 Method for manufacturing a semiconductor device
04/23/2002US6376322 Base-emitter region of a submicronic bipolar transistor
04/23/2002US6376321 Method of making a pn-junction in a semiconductor element
04/23/2002US6376319 Forming transistor
04/23/2002US6376318 Method of manufacturing a semiconductor device
04/23/2002US6376316 Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulation
04/23/2002US6376315 Method of forming a trench DMOS having reduced threshold voltage
04/23/2002US6376314 Method of semiconductor device fabrication
04/23/2002US6376312 Formation of non-volatile memory device comprised of an array of vertical field effect transistor structures
04/23/2002US6376311 Vertical double diffused MOSFET and method for manufacturing same
04/23/2002US6376307 Method for fabricating NOR type memory cells of nonvolatile memory device
04/23/2002US6376304 Semiconductor memory device and a method for fabricating the same
04/23/2002US6376296 High-voltage device and method for manufacturing high-voltage device
04/23/2002US6376290 Method of forming a semiconductor thin film on a plastic substrate
04/23/2002US6376289 Method of manufacturing a semiconductor device
04/23/2002US6376287 Method of making field effect
04/23/2002US6376286 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer
04/23/2002US6376270 Method of making an array of TFTs having an insulation layer with a low dielectric constant
04/23/2002US6375899 Reconfigurable; nucleic acid hybridization and analysis; medical diagnosis
04/23/2002US6375737 Method of self-assembly silicon quantum dots
04/23/2002US6374678 Hermetically sealed pressure sensor
04/23/2002CA2233374C Monolithic accelerometric transducer
04/18/2002WO2002031890A2 OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME
04/18/2002WO2002031889A1 Planar diac
04/18/2002WO2002031888A1 Symmetrical planar diac
04/18/2002WO2002031887A1 Transistor and display comprising it
04/18/2002WO2002031886A1 Monolithically integrated e/d mode hemt and method for fabricating the same
04/18/2002WO2002031885A1 Vertical component with high-voltage strength