Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/25/2002 | US20020047125 SiC semicoductor device |
04/25/2002 | US20020047124 Semiconductor element |
04/25/2002 | US20020047123 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
04/25/2002 | US20020047122 Polycrystalline silicon layer, its growth method and semiconductor device |
04/25/2002 | US20020047119 Image-pickup semiconductor device having a lens, a light-receiving element and a flexible substrate therebetween with a shading plate blocking undesired light rays |
04/25/2002 | US20020047118 Method for producing semiconductor device |
04/25/2002 | US20020047113 Semiconductor device |
04/25/2002 | US20020047111 Semiconductor device having a ferroelectric capacitor with tensile stress properties |
04/25/2002 | US20020046986 Selective ratios do not cause shape defects |
04/25/2002 | US20020046874 Thin film metal barrier for electrical interconnections |
04/25/2002 | US20020046765 Photovoltaic cell and process for producing the same |
04/25/2002 | DE10151376A1 Dynamic semiconductor acceleration sensor for automotive airbag release has two movable electrodes in cruciform arrangement to form condensers |
04/25/2002 | DE10137369A1 Halbleitersubstrat, Feldeffekt-Transistor, Verfahren zur Bildung einer SiGe-Schicht und Verfahren zur Bildung einer gespannten Si-Schicht unter Verwendung derselben, und Verfahren zur Herstellung eines Feldeffekt-Transistors Semiconductor substrate, the field effect transistor, method of forming a SiGe layer and method for forming a strained Si layer using the same, and method for producing a field effect transistor |
04/25/2002 | DE10050044A1 Process for forming a gate on a semiconductor substrate used in the production of a MOST, forming a gate oxide layer on the substrate followed by a polysilicon layer, a tungsten silicide layer and a nitride blocking layer |
04/25/2002 | DE10047152A1 Hochvolt-Diode und Verfahren zu deren Herstellung High-voltage diode and methods for their preparation |
04/24/2002 | EP1199754A2 Photovoltaic cell and process for producing the same |
04/24/2002 | EP1199752A1 Multiple composite one-dimensional structural body and functional material |
04/24/2002 | EP1199742A2 Multi-layered polysilicon gate process |
04/24/2002 | EP1198852A1 Preferred methods for producing electrical circuit elements used to control an electronic display |
04/24/2002 | EP1198851A1 Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device |
04/24/2002 | EP1198844A1 Diode comprising a metal semiconductor contact and a method for the production thereof |
04/24/2002 | EP1198843A1 Power semiconductor devices having an insulating layer formed in a trench |
04/24/2002 | EP1198842A2 Trench-gate semiconductor devices |
04/24/2002 | EP1198841A1 Electric semiconductor element with a contact hole |
04/24/2002 | EP1198840A1 Method for making a device comprising layers of planes of quantum dots |
04/24/2002 | EP1198839A1 Semiconductor element |
04/24/2002 | EP1198834A1 New method of forming select gate to improve reliability and performance for nand type flash memory devices |
04/24/2002 | EP1198830A2 Process of manufacturing a semiconductor device including a buried channel field effect transistor |
04/24/2002 | CN1346515A Methods for packaging integrated circuit devices including cavities adjacent active regions and related structures |
04/24/2002 | CN1346514A Electrostatic discharge protection of integrated circuits |
04/24/2002 | CN1346153A 半导体器件 Semiconductor devices |
04/24/2002 | CN1346152A Thin-film transistor and semiconductor |
04/24/2002 | CN1346132A Non-volatile semiconductor memory and system |
04/24/2002 | CN1083617C Semconductor device producing method |
04/24/2002 | CN1083607C 半导体存储器 Semiconductor memory |
04/23/2002 | US6377597 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device |
04/23/2002 | US6377490 Nonvolatile semiconductor memory device and method for driving the same |
04/23/2002 | US6377485 Multi-value semiconductor memory device and reading method thereof |
04/23/2002 | US6377323 Liquid crystal display device and method of making same |
04/23/2002 | US6377322 Liquid crystal display device having spontaneous polarization and no compensating capacitors |
04/23/2002 | US6377115 Integrated potentiometer and corresponding fabrication process |
04/23/2002 | US6377070 In-service programmable logic arrays with ultra thin vertical body transistors |
04/23/2002 | US6376921 Semiconductor device, method for fabricating the semiconductor device, lead frame and method for producing the lead frame |
04/23/2002 | US6376898 Bipolar transistor layout with minimized area and improved heat dissipation |
04/23/2002 | US6376897 Lateral bipolar transistor formed on an insulating layer |
04/23/2002 | US6376891 High voltage breakdown isolation semiconductor device and manufacturing process for making the device |
04/23/2002 | US6376890 High-voltage edge termination for planar structures |
04/23/2002 | US6376888 Semiconductor device and method of manufacturing the same |
04/23/2002 | US6376886 Field effect transistor having comb-shaped lead-out electrodes capable of reducing parasitic capacitance therebetween |
04/23/2002 | US6376885 Semiconductor structure with metal silicide and method for fabricated the structure |
04/23/2002 | US6376881 Protective element formed in an SOI substrate for preventing a breakdown in an oxide film located below a diffused resistor |
04/23/2002 | US6376880 High-speed lateral bipolar device in SOI process |
04/23/2002 | US6376878 MOS-gated devices with alternating zones of conductivity |
04/23/2002 | US6376876 NAND-type flash memory devices and methods of fabricating the same |
04/23/2002 | US6376875 Semiconductor component with compensation implantation |
04/23/2002 | US6376870 Low voltage transistors with increased breakdown voltage to substrate |
04/23/2002 | US6376868 Multi-layered gate for a CMOS imager |
04/23/2002 | US6376867 Heterojunction bipolar transistor with reduced thermal resistance |
04/23/2002 | US6376862 Semiconductor device and its manufacturing method |
04/23/2002 | US6376861 Thin film transistor and method for fabricating the same |
04/23/2002 | US6376860 Silicon on an insulating surface; pair of impurity regions; portion where a metal containing material has been applied to semiconductor film directly formed in one of said regions; crystals extend parallel to insulating surface from portions |
04/23/2002 | US6376859 Variable porosity porous silicon isolation |
04/23/2002 | US6376858 Resonant tunneling diode with adjusted effective masses |
04/23/2002 | US6376373 Method of manufacturing a semiconductor device |
04/23/2002 | US6376372 Approaches for mitigating the narrow poly-line effect in silicide formation |
04/23/2002 | US6376350 Method of forming low resistance gate electrode |
04/23/2002 | US6376349 Forming dielectric; then amorphous metal; siliciding |
04/23/2002 | US6376348 Reliable polycide gate stack with reduced sheet resistance and thickness |
04/23/2002 | US6376347 Method of making gate wiring layer over semiconductor substrate |
04/23/2002 | US6376344 Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device |
04/23/2002 | US6376340 Methods for forming polycrystalline silicon film |
04/23/2002 | US6376333 Method of manufacturing flexible display with transfer from auxiliary substrate |
04/23/2002 | US6376331 Method for manufacturing a semiconductor device |
04/23/2002 | US6376322 Base-emitter region of a submicronic bipolar transistor |
04/23/2002 | US6376321 Method of making a pn-junction in a semiconductor element |
04/23/2002 | US6376319 Forming transistor |
04/23/2002 | US6376318 Method of manufacturing a semiconductor device |
04/23/2002 | US6376316 Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulation |
04/23/2002 | US6376315 Method of forming a trench DMOS having reduced threshold voltage |
04/23/2002 | US6376314 Method of semiconductor device fabrication |
04/23/2002 | US6376312 Formation of non-volatile memory device comprised of an array of vertical field effect transistor structures |
04/23/2002 | US6376311 Vertical double diffused MOSFET and method for manufacturing same |
04/23/2002 | US6376307 Method for fabricating NOR type memory cells of nonvolatile memory device |
04/23/2002 | US6376304 Semiconductor memory device and a method for fabricating the same |
04/23/2002 | US6376296 High-voltage device and method for manufacturing high-voltage device |
04/23/2002 | US6376290 Method of forming a semiconductor thin film on a plastic substrate |
04/23/2002 | US6376289 Method of manufacturing a semiconductor device |
04/23/2002 | US6376287 Method of making field effect |
04/23/2002 | US6376286 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer |
04/23/2002 | US6376270 Method of making an array of TFTs having an insulation layer with a low dielectric constant |
04/23/2002 | US6375899 Reconfigurable; nucleic acid hybridization and analysis; medical diagnosis |
04/23/2002 | US6375737 Method of self-assembly silicon quantum dots |
04/23/2002 | US6374678 Hermetically sealed pressure sensor |
04/23/2002 | CA2233374C Monolithic accelerometric transducer |
04/18/2002 | WO2002031890A2 OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME |
04/18/2002 | WO2002031889A1 Planar diac |
04/18/2002 | WO2002031888A1 Symmetrical planar diac |
04/18/2002 | WO2002031887A1 Transistor and display comprising it |
04/18/2002 | WO2002031886A1 Monolithically integrated e/d mode hemt and method for fabricating the same |
04/18/2002 | WO2002031885A1 Vertical component with high-voltage strength |