Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/30/2002 | US6380019 Method of manufacturing a transistor with local insulator structure |
04/30/2002 | US6380017 Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor |
04/30/2002 | US6380015 Aoped polysilicon layer is formed over a silicon or silicon oxide substrate, and is counterdoped with boron to adjust work function |
04/30/2002 | US6380014 Manufacture method of semiconductor device with suppressed impurity diffusion from gate electrode |
04/30/2002 | US6380013 Method for forming semiconductor device having epitaxial channel layer using laser treatment |
04/30/2002 | US6380011 Semiconductor device and a method of manufacturing the same |
04/30/2002 | US6380010 Shielded channel transistor structure with embedded source/drain junctions |
04/30/2002 | US6380009 Method of manufacturing thin film transistors |
04/30/2002 | US6380008 Edge stress reduction by noncoincident layers |
04/30/2002 | US6380007 Semiconductor device and manufacturing method of the same |
04/30/2002 | US6380006 Infiltrating solution of organic solvent into film and reflowing, etching exposed region using film as mask |
04/30/2002 | US6380005 Charge transfer device and method for manufacturing the same |
04/30/2002 | US6379998 Semiconductor device and method for fabricating the same |
04/30/2002 | US6379985 Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
04/30/2002 | US6379977 Method of manufacturing ferroelectric memory device |
04/30/2002 | US6379897 Methods for gene expression monitoring on electronic microarrays |
04/30/2002 | US6379642 Vacancy dominated, defect-free silicon |
04/30/2002 | CA2360312A1 Novel gate dielectric |
04/25/2002 | WO2002033759A1 P-channel field-effect transistor |
04/25/2002 | WO2002033758A1 An isotope structure formed in an indirect band gap semiconductor material |
04/25/2002 | WO2002033753A2 Integrated circuit provided with overvoltage protection and method for manufacture thereof |
04/25/2002 | WO2002033748A2 Method and apparatus for introducing an equivalent rc circuit in a mos device using resistive wells |
04/25/2002 | WO2002033746A1 Layer transfer of low defect sige using an etch-back process |
04/25/2002 | WO2002033739A1 Control trimming of hard mask for transistor gate |
04/25/2002 | WO2002033738A1 Semiconductor device and method of manufacture thereof |
04/25/2002 | WO2001097258A3 Fast recovery diode and method for its manufacture |
04/25/2002 | WO2001048822A3 Thin-film transistor circuitry |
04/25/2002 | US20020048972 Semiconductor device and method for fabricating the same |
04/25/2002 | US20020048970 Method of controlling a shape of an oxide layer formed on a substrate |
04/25/2002 | US20020048968 Porous silicon oxycarbide integrated circuit insulator |
04/25/2002 | US20020048967 Fabrication process of a semiconductor integrated circuit device |
04/25/2002 | US20020048961 Semiconductor device and method for manufacturing semiconductor device |
04/25/2002 | US20020048947 Semiconductor integrated circuit device and the process of the same |
04/25/2002 | US20020048945 Method for manufacturing semiconductor devices |
04/25/2002 | US20020048941 Process for producing semiconductor integrated circuit device |
04/25/2002 | US20020048939 A low step coverage plasma-enhanced oxide layer is formed between a polygate and a gate spacer; a gap, which is broad at the top and narrow at the bottom, is formed;metal silicide formed on exposed polygate surface |
04/25/2002 | US20020048937 Method of forming a conductive contact |
04/25/2002 | US20020048919 Inactivating ions are implanted only to the source region of the semiconductor layer, to damage the crystal near the surface of the semiconductor layer, promoting siliciding reaction; parasitic resistance reduced |
04/25/2002 | US20020048918 Forming two layers, etching the top one and oxidizing to form a notch, where the bottom layer oxidizes at a faster rate than the top layer; making a transistor gate |
04/25/2002 | US20020048917 Semiconductor device and method of fabricating same |
04/25/2002 | US20020048915 Power semiconductor switch |
04/25/2002 | US20020048914 Complementary metal oxide semiconductor (CMOS); transistor of a second conductivity type is Lateral MOS (LMOS) structure, and transistor of a first conductivity type is a Lateral Double-diffused (LDMOS) structure |
04/25/2002 | US20020048912 Low concentration drain region has two or more kinds of different impurity concentrations, and not by changing impurity distribution uniformly over whole low concentration drain regions, drain withstanding voltage improved |
04/25/2002 | US20020048911 Selectively depositing polysilicon via chemical vapor deposition on the crystalline region and not the amorphous region of a substrate; conditions include chlorine gas-free and plasma-free |
04/25/2002 | US20020048905 Conductive resin film configured as a plurality of interconnect lines connected to the bump front electrodes; large number can be made at same time |
04/25/2002 | US20020048897 Method of forming a self-aligned shallow trench isolation |
04/25/2002 | US20020048894 Transistor and process for fabricating the same |
04/25/2002 | US20020048893 Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
04/25/2002 | US20020048892 Bipolar transistor with trenched-groove isolation regions |
04/25/2002 | US20020048886 Semiconductor device and method for fabricating the same |
04/25/2002 | US20020048884 Angled dopant implantation is followed by the formation of vertical trenches |
04/25/2002 | US20020048883 Method of forming a semiconductor-on-insulator transistor |
04/25/2002 | US20020048882 Capacitance coupling between the source and the floating gate forms a channel in the substrate, which is injected with hot electrons |
04/25/2002 | US20020048875 Thin film transistors and methods of forming thin film transistors |
04/25/2002 | US20020048873 Semiconductor device and production thereof |
04/25/2002 | US20020048869 Method of forming semiconductor thin film and plastic substrate |
04/25/2002 | US20020048868 Insulated gate field effect transistor and method for forming the same |
04/25/2002 | US20020048867 Process for forming thin film transistor |
04/25/2002 | US20020048863 Semiconductor device and a method for forming patterns |
04/25/2002 | US20020048862 Fully self-aligned fet technology |
04/25/2002 | US20020048861 Thin-film transistor and method of making same |
04/25/2002 | US20020048858 Methods of t-gate fabrication using a hybrid resist |
04/25/2002 | US20020048855 Semiconductor device and method of manufacturing the same |
04/25/2002 | US20020048841 Disposable spacer for symmetric and asymmetric schottky contact to SOI mosfet |
04/25/2002 | US20020048838 Acceleration sensor and method of manufacturing the same |
04/25/2002 | US20020048834 Method of increasing the conductivity of a transparent conductive layer |
04/25/2002 | US20020048829 Light emitting device and fabricating method thereof |
04/25/2002 | US20020048636 Method for fabricating electrode structure and method for fabricating semiconductor device |
04/25/2002 | US20020048204 Semiconductor integrated circuit device |
04/25/2002 | US20020048200 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same |
04/25/2002 | US20020048190 Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET |
04/25/2002 | US20020047951 Liquid crystal display apparatus and projection-type liquid crystal display apparatus |
04/25/2002 | US20020047950 Thin film transistor for a liquid crystal display device and a fabrication process thereof |
04/25/2002 | US20020047949 Liquid crystal displays |
04/25/2002 | US20020047836 Active matrix display device |
04/25/2002 | US20020047825 Semiconductor device and manufacturing method thereof |
04/25/2002 | US20020047581 Light emitting device and method of driving the same |
04/25/2002 | US20020047580 Process of crystallizing semiconductor thin film and laser irradiation system |
04/25/2002 | US20020047579 Process of crystallizing semiconductor thin film and laser irradiation system |
04/25/2002 | US20020047567 Organic led display device of active matrix drive type and fabrication method therefor |
04/25/2002 | US20020047210 Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device |
04/25/2002 | US20020047204 Semiconductor device |
04/25/2002 | US20020047201 Semiconductor device with rare metal electrode |
04/25/2002 | US20020047195 Semiconductor device and method for manufacturing same |
04/25/2002 | US20020047176 Horizontal, insulated gate field effect transistor and method of driving the same |
04/25/2002 | US20020047173 Semiconductor device, semiconductor electret condenser microphone, and method of producing semiconductor electret condenser microphone |
04/25/2002 | US20020047171 Low resistance self aligned extended gate structure utilizing a T or Y shaped gate structure for high performance deep submicron FET |
04/25/2002 | US20020047170 Semiconductor device and manufacturing method thereof |
04/25/2002 | US20020047169 Semiconductor device and SOI substrate |
04/25/2002 | US20020047168 Semiconductor device comprising MIS field-effect transistor, and method of fabricating the same |
04/25/2002 | US20020047163 Semiconductor device and manufacturing method thereof |
04/25/2002 | US20020047159 Method of manufacturing semiconductor substrate, semiconductor substrate, electro-optical apparatus and electronic equipment |
04/25/2002 | US20020047158 SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same |
04/25/2002 | US20020047157 Semiconductor device using an soi substrate |
04/25/2002 | US20020047155 Programmable neuron MOSFET on SOI |
04/25/2002 | US20020047146 Ferroelectric memory device and manufacturing method thereof |
04/25/2002 | US20020047143 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
04/25/2002 | US20020047141 Semiconductor device, and manufacture thereof |
04/25/2002 | US20020047140 Arrangement in a power mosfet |
04/25/2002 | US20020047139 Solid state image pickup device and its driving method |