Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/08/2002US6462419 Semiconductor device and method for manufacturing the same
10/08/2002US6462403 Semiconductor device comprising thin film transistors having a passivation film formed thereon
10/08/2002US6462398 Semiconductor device and semiconductor assembly apparatus for semiconductor device
10/08/2002US6462397 In-situ doped epitaxial si or sige base layer is used instead of using an ion-implanted si base, in order to achieve higher cutoff frequency.
10/08/2002US6462393 Schottky device
10/08/2002US6462390 Multi-film capping layer for a salicide process
10/08/2002US6462389 Semiconductor device
10/08/2002US6462387 High density read only memory
10/08/2002US6462384 Semiconductor device for ESD protection
10/08/2002US6462383 Semiconductor device with embedded protection element
10/08/2002US6462382 MOS type semiconductor apparatus
10/08/2002US6462379 SOI semiconductor device and method for manufacturing the same
10/08/2002US6462378 Power MOSFET with decreased body resistance under source region
10/08/2002US6462377 Insulated gate field effect device
10/08/2002US6462376 Power MOS element and method for producing the same
10/08/2002US6462375 Scalable dual-bit flash memory cell and its contactless flash memory array
10/08/2002US6462374 Semiconductor device and method for fabricating the same
10/08/2002US6462373 Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layer
10/08/2002US6462372 Scaled stack-gate flash memory device
10/08/2002US6462370 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same
10/08/2002US6462366 Ferroelectric nonvolatile transistor
10/08/2002US6462365 Active pixel having reduced dark current in a CMOS image sensor
10/08/2002US6462364 Semiconductor integrated circuit and method for manufacturing the same
10/08/2002US6462362 Heterojunction bipolar transistor having prevention layer between base and emitter
10/08/2002US6462361 GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure
10/08/2002US6462359 Stability in thyristor-based memory device
10/08/2002US6461984 Semiconductor device using N2O plasma oxide and a method of fabricating the same
10/08/2002US6461982 Methods for forming a dielectric film
10/08/2002US6461973 Method for forming high quality multiple thickness oxide layers by reducing descum induced defects
10/08/2002US6461968 Method for fabricating a semiconductor device
10/08/2002US6461967 Material removal method for forming a structure
10/08/2002US6461960 Method of manufacturing a semiconductor device
10/08/2002US6461957 Method of manufacturing semiconductor device
10/08/2002US6461950 Semiconductor processing methods, semiconductor circuitry, and gate stacks
10/08/2002US6461945 Solid phase epitaxy process for manufacturing transistors having silicon/germanium channel regions
10/08/2002US6461943 Method of making semiconductor device
10/08/2002US6461927 Semiconductor device and method of producing the same
10/08/2002US6461924 MOS transistor for high-speed and high-performance operation and manufacturing method thereof
10/08/2002US6461920 Semiconductor device and method of manufacturing the same
10/08/2002US6461918 Power MOS device with improved gate charge performance
10/08/2002US6461917 Memory device, manufacturing method thereof and integrated circuit thereof
10/08/2002US6461916 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device
10/08/2002US6461915 Method and structure for an improved floating gate memory cell
10/08/2002US6461908 Method of manufacturing a semiconductor device
10/08/2002US6461907 Semiconductor device and fabrication method
10/08/2002US6461905 Dummy gate process to reduce the Vss resistance of flash products
10/08/2002US6461903 Method for fabricating a part depletion type SOI device preventing a floating body effect
10/08/2002US6461902 RF LDMOS on partial SOI substrate
10/08/2002US6461901 Method of forming a thin-film transistor having a high resistance back channel region
10/08/2002US6461900 Method to form a self-aligned CMOS inverter using vertical device integration
10/08/2002US6461899 Oxynitride laminate “blocking layer” for thin film semiconductor devices
10/08/2002US6461889 Method of fabricating semiconductor device with diamond substrate
10/08/2002US6461885 Method of fabricating and structure of an active matrix light-emitting display device
10/08/2002US6461882 Fault simulation method and fault simulator for semiconductor integrated circuit
10/08/2002US6461878 Feedback control of strip time to reduce post strip critical dimension variation in a transistor gate electrode
10/08/2002US6461529 Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
10/03/2002WO2002078186A1 In service programmable logic arrays with ultra thin vertical body transistors
10/03/2002WO2002078095A2 Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate
10/03/2002WO2002078094A1 Electronic devices comprising thin-film transistors, and their manufacture
10/03/2002WO2002078093A1 Reduced mask count process for manufacture of mosgated device
10/03/2002WO2002078092A1 Power semiconductor device having a trench gate electrode and method of making the same
10/03/2002WO2002078091A2 Field effect transistor structure and method of manufacture
10/03/2002WO2002078090A2 Field-effect transistor structure and method of manufacture
10/03/2002WO2002078087A2 Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same
10/03/2002WO2002078075A1 Fabrication method of so1 semiconductor devices
10/03/2002WO2002078067A1 Method for growing crystal of gallium nitride compound semiconductor and electronic device having gallium nitride compound semiconductor
10/03/2002WO2002078058A2 Method for the production of a mosfet with very small channel length
10/03/2002WO2002078056A2 Passivation layer for molecular electronic device fabrication
10/03/2002WO2002077632A1 Field-effect transistor
10/03/2002WO2002077598A1 Semiconductor pressure sensor and regulation method therefor
10/03/2002WO2002077060A1 Conjugated polymers containing spirobifluorene units and fluorene units, and the use thereof
10/03/2002WO2002076880A2 Method for producing micromechanic sensors and sensors produced by said method
10/03/2002WO2002054449A3 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
10/03/2002WO2002025735A3 Diode with variable width metal stripes for improved protection against electrostatic discharge (esd) current failure
10/03/2002WO1999065080A3 Device and method for controlling thyristors
10/03/2002WO1999062113A3 Method for producing schottky diodes
10/03/2002US20020142624 Method of forming dielectric films
10/03/2002US20020142616 Method for improved fabrication of salicide structures
10/03/2002US20020142603 Method for forming square-shouldered sidewall spacers and devices fabricated
10/03/2002US20020142571 Semiconductor device
10/03/2002US20020142570 Method for fabrication of a high capacitance interpoly dielectric
10/03/2002US20020142567 Method for manufacturing polycrystalline semiconductor layers and thin-film transistors, and laser annealing apparatus
10/03/2002US20020142566 Silicon wafers for CMOS and other integrated circuits
10/03/2002US20020142565 Method for fabricating a polycrystalline silicon film
10/03/2002US20020142563 Nitride compound based semiconductor device and manufacturing method of same
10/03/2002US20020142562 Method for manufacturing device substrate with metal back-gate and structure formed thereby
10/03/2002US20020142558 Self-aligned SiGe HBT BiCMOS on SOI substrate and method of fabricating the same
10/03/2002US20020142557 Semiconductor device and a method of manufacturing the same
10/03/2002US20020142556 Method for manufacturing transistor of double spacer structure
10/03/2002US20020142554 Semiconductor device and process for production thereof
10/03/2002US20020142552 Methods of fabricating a semiconductor device structure for manufacturing high-density and high-performance integrated-circuits
10/03/2002US20020142551 CMOS structure with non-epitaxial raised source/drain and self-aligned gate and method of manufacture
10/03/2002US20020142550 Semiconductor device and method of manufacturing the same
10/03/2002US20020142549 Method for manufacturing a semiconductor device
10/03/2002US20020142548 Semiconductor device and method for manufacturing the same
10/03/2002US20020142546 Two mask floating gate EEPROM and method of making
10/03/2002US20020142544 Method of forming a self-aligned floating gate poly to an active region for a flash E2PROM cell
10/03/2002US20020142543 Method for manufacturing a self - aligned split-gate flash memory cell
10/03/2002US20020142536 Method of making single c-axis PGO thin film on ZrO2 for non-volatile memory applications
10/03/2002US20020142535 Modified nitride spacer for solving charge retention issue in floating gate memory cell
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