Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/17/2002WO2002082546A2 Overvoltage protection device
10/17/2002WO2002082526A1 Semiconductor device and its manufacturing method
10/17/2002WO2002082518A1 An apparatus and a method for forming a pattern using a crystal structure of material
10/17/2002WO2002082510A1 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
10/17/2002WO2002082503A2 Multi-thickness silicide device
10/17/2002WO2002082100A1 Method for manufacturing a silicon sensor and a silicon sensor
10/17/2002WO2002082096A2 Sensor
10/17/2002WO2002065548A3 Integrated circuit arrangement consisting of a flat substrate
10/17/2002WO2002019431A3 Method and device to reduce gate-induced drain leakage (gidl) current in thin gate oxide mosfets
10/17/2002US20020152059 Semiconductor process parameter determining method, semiconductor process parameter determining system, and semiconductor process parameter determining program
10/17/2002US20020151187 Method of relieving surface tension on a semiconductor wafer
10/17/2002US20020151174 Wiring line assembly and method for manufacturing the same, and thin film transistor array substrate having the wiring line assembly and method for manufacturing the same
10/17/2002US20020151173 Single electron resistor memory device and method
10/17/2002US20020151172 Single electron resistor memory device and method
10/17/2002US20020151171 Semiconductor device and manufacturing method therefor, circuit substrate, and electronic apparatus
10/17/2002US20020151161 Method for forming conductive film pattern, and electro-optical device and electronic apparatus
10/17/2002US20020151147 Manufacturing of a lateral bipolar transistor
10/17/2002US20020151146 Magnetoresistance van der pauw sensor having conductive inhomogeneity embedded in semiconductor material on substrate, ratio of areas maximizes room temperature magnetoresistance, stack of thin metal layers between areas for ohmic contact
10/17/2002US20020151145 Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication
10/17/2002US20020151144 Method of manufacturing a semiconductor device
10/17/2002US20020151142 Thermally stable poly-Si/high dielectric constant material interfaces
10/17/2002US20020151132 Micromachined electromechanical (MEM) random access memory array and method of making same
10/17/2002US20020151129 Method of manufacturing a semiconductor device
10/17/2002US20020151128 High-pressure anneal process for integrated circuits
10/17/2002US20020151125 Method of forming a CMOS type semiconductor device having dual gates
10/17/2002US20020151124 RF power device and method of manufacturing the same
10/17/2002US20020151123 Phase change recording layer sandwiched between dielectric layers; metal mirror layer; thickness gradually increases, complete erasure time decreases
10/17/2002US20020151122 Method of producing semiconductor device
10/17/2002US20020151120 Method of manufacturing a semiconductor device
10/17/2002US20020151119 Flat panel display device and method of manufacturing the same
10/17/2002US20020151117 Integrated circuits/semiconductors; bar codes; voltage amplification; dielectrics
10/17/2002US20020151116 Method for manufacturing tft array substrate of liquid crystal display device
10/17/2002US20020151108 Vertical source/drain contact semiconductor
10/17/2002US20020151107 Fabrication of dram and other semiconductor devices with an insulating film using a wet rapid thermal oxidation process
10/17/2002US20020151099 Method of fabricating a semiconductor device containing nitrogen in an oxide film
10/17/2002US20020151097 Flat panel display and method for forming the same
10/17/2002US20020150917 Determining concentration of preferential nucleotide sequences in sample; obtain nucleotide sequences, amplify, hybridize with amplicons, detect and quantitate hybridization products
10/17/2002US20020149984 Semiconductor physical quantity sensing device
10/17/2002US20020149958 Non-volatile semiconductor memory
10/17/2002US20020149729 Liquid crystal display apparatus
10/17/2002US20020149722 Liquid crystal display device
10/17/2002US20020149711 Active matrix display device
10/17/2002US20020149450 Semiconductor switches and switching circuits for microwave
10/17/2002US20020149117 Semiconductor device and its manufacturing method
10/17/2002US20020149089 Multi-emitter bipolar transistor for bandgap reference circuits
10/17/2002US20020149084 Semiconductor device and method for fabricating the same
10/17/2002US20020149081 Semiconductor device and method of fabricating the same
10/17/2002US20020149079 Semiconductor device and process for its manufacture to increase threshold voltage stability
10/17/2002US20020149068 Method of manufacturing semiconductor device, and semiconductor device having memory cell
10/17/2002US20020149067 Isolated high voltage MOS transistor
10/17/2002US20020149066 Twin bit cell flash memory device
10/17/2002US20020149065 MIS field effect transistor and method of manufacturing the same
10/17/2002US20020149064 Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size
10/17/2002US20020149062 Semiconductor device
10/17/2002US20020149061 Nonvolatile memory cell, operating method of the same and nonvolatile memory array
10/17/2002US20020149060 Nonvolatile memory cell, operating method of the same and nonvolatile memory array
10/17/2002US20020149058 Halo-free non-rectifying contact on chip with halo source/drain diffusion
10/17/2002US20020149057 Semiconductor device and the fabricating method therefor
10/17/2002US20020149056 Electro-optical device and semiconductor device
10/17/2002US20020149054 Flat panel display device and method of manufacturing the same
10/17/2002US20020149053 Semiconductor device and semiconductor device manufacturing method
10/17/2002US20020149052 High-voltage transistor with buried conduction layer
10/17/2002US20020149051 Superjunction device with self compensated trench walls
10/17/2002US20020149050 Integrated memory cell and method of fabrication
10/17/2002US20020149046 Semiconductor integrated circuit having a non-volatile semiconductor memory and a capacitor
10/17/2002US20020149044 Semiconductor integrated circuit device and method of manufacturing the same
10/17/2002US20020149042 Gate structure laminated with insulating film, conductor film, ferroelectric body film and second conductor film on semiconductor substrate, with low dielectric constant layer restraining layer at interface between insulator and substrate
10/17/2002US20020149038 Semiconductor device
10/17/2002US20020149033 GaN HBT superlattice base structure
10/17/2002US20020149032 Fet (field effect transistor) and high frequency module
10/17/2002US20020149031 Semiconductor device having gate all around type transistor and method of forming the same
10/17/2002US20020149029 Integrated circuit having improved ESD protection
10/17/2002US20020149022 Silicon carbide inversion channel mosfets
10/17/2002US20020149021 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
10/17/2002US20020149018 Active-matrix substrate and method of fabricating same
10/17/2002US20020149017 Active matrix display device having high intensity and high precision and manufacturing method thereof
10/17/2002US20020149016 Semiconductor device with semiconductor circuit comprising semiconductior units, and method of fabricating it
10/17/2002US20020149011 Semiconductor component and corresponding fabrication method
10/17/2002US20020149010 Organic semiconductor diode
10/17/2002US20020148727 Nanostructure-based high energy capacity material
10/17/2002US20020148297 Pressure sensor using resin adhesive between sensor element and stem
10/17/2002US20020148291 Acceleration sensor
10/17/2002DE10216020A1 Pressure sensor has pressure inlet device for pressure measuring chamber provided with integral protection device
10/17/2002DE10216015A1 Overvoltage protection circuit for CMOS circuits has potential divider and inverter circuits and switching element formed on same substrate as protected integrated CMOS circuit
10/17/2002DE10215853A1 Angular velocity sensor uses measured capacitance variations between oscillation device subjected to angular velocity and cooperating measuring electrode
10/17/2002DE10215104A1 Drucksensor, bei welchem ein Harzhaftmittel zwischen einem Sensorelement und einem Schaft verwendet wird Pressure sensor is used in which a resin adhesive between a sensor element and a shank
10/17/2002DE10204438A1 Halbleitervorrichtung Semiconductor device
10/17/2002DE10147677A1 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
10/17/2002DE10117483A1 Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren Semiconductor power device and manufacturing method thereof
10/17/2002DE10116931A1 Sensor Sensor
10/17/2002DE10116876A1 Selbstjustierte Kontaktdotierung für organische Feldeffekttransistoren Self Tuned contact doping for organic field-effect transistors
10/17/2002DE10116557A1 Integrierte, abstimmbare Kapazität Integrated tunable capacitance
10/17/2002DE10114956A1 Semiconductor component used in DRAMs comprises a binary metal oxide dielectric layer arranged on a substrate
10/17/2002DE10114778A1 Verfahren zur Herstellung eines MOSFETs mit sehr kleiner Kanallänge A process for producing a MOSFET having a very small channel length
10/16/2002EP1249872A2 GaN HBT superlattice base structure
10/16/2002EP1249862A2 Semiconductor device and method for forming the same
10/16/2002EP1249035A2 Silicon/germanium bipolar transistor with an optimized germanium profile
10/16/2002EP1248952A2 Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor and a corresponding method for producing the same
10/16/2002EP0948057B1 Semiconductor device and process for manufacturing the same
10/16/2002EP0761016B1 Semiconductor device provided with an ligbt element
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