Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/28/2002WO2002095493A1 Active plate
11/28/2002WO2002095492A1 Active matrix display substrate
11/28/2002WO2002094910A1 Electroluminescent polymers and use thereof in light-emitting devices
11/28/2002WO2002049116A3 Vertical junction field effect semiconductor diodes
11/28/2002WO2002044805A3 Method of increasing the conductivity of a transparent conductive layer
11/28/2002US20020177971 Pressure sensor
11/28/2002US20020177327 Method for forming a gate dielectric layer by a single wafer process
11/28/2002US20020177324 Vertical metal oxide silicon field effect semiconductor diodes
11/28/2002US20020177293 Hafnium nitride gate dielectric
11/28/2002US20020177292 Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
11/28/2002US20020177290 Process for annealing semiconductors and/or integrated circuits
11/28/2002US20020177289 Semiconductor device having a shallow junction and a fabrication process thereof
11/28/2002US20020177286 Method of producing SOI MOSFET
11/28/2002US20020177285 Semiconuctor power component and a corresponding manufacturing method
11/28/2002US20020177282 Method of forming semiconductor device having a GAA type transistor
11/28/2002US20020177277 Power semiconductor devices having laterally extending base shielding regions that inhibit base reach through and methods of forming same
11/28/2002US20020177269 Method of fabricating a flash memory cell
11/28/2002US20020177265 Method of fabricating a vertical insulated gate transistor with low overlap of the gate on the source and the drain, and an integrated circuit including this kind of transistor
11/28/2002US20020177264 Reducing threshold voltage roll-up/roll-off effect for MOSFETS
11/28/2002US20020177263 Damascene double-gate MOSFET with vertical channel regions
11/28/2002US20020177261 Monolithically integrated e/d mode hemt and method for fabricating the same
11/28/2002US20020177260 Semiconductor device and method of fabricating the same
11/28/2002US20020177259 Method of fabricating a liquid crystal display
11/28/2002US20020177253 Process for making a high voltage NPN Bipolar device with improved AC performance
11/28/2002US20020177252 Method of manufacturing semiconductor device capable of sensing dynamic quantity
11/28/2002US20020177244 MFOS memory transistor & method of fabricating same
11/28/2002US20020176474 Quantum dot vertical cavity surface emitting laser
11/28/2002US20020176289 Method of erasing a FAMOS memory cell and a corresponding memory cell
11/28/2002US20020176284 Nonvolatile semiconductor memory well voltage setting circuit without latchup and semiconductor memory device provided with the circuit
11/28/2002US20020176283 Nonvolatile semiconductor memory device
11/28/2002US20020176280 Dual-cell soft programming for virtual-ground memory arrays
11/28/2002US20020176032 Active matrix substrate for liquid crystal display and its fabrication
11/28/2002US20020176031 Active plate
11/28/2002US20020176030 Liquid crystal display and manufacturing methd of same
11/28/2002US20020176029 Semipermeable liquid crystal display device and manufacturing method thereof
11/28/2002US20020175412 Process for forming MOS-gated power device having segmented trench and extended doping zone
11/28/2002US20020175408 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
11/28/2002US20020175395 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
11/28/2002US20020175394 Method of forming and operating trench split gate non-volatile flash memory cell structure
11/28/2002US20020175393 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
11/28/2002US20020175392 High voltage semiconductor device having high breakdown voltage isolation region
11/28/2002US20020175391 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same
11/28/2002US20020175383 MOS-gated power device with doped polysilicon body and process for forming same
11/28/2002US20020175381 Semiconductor device having chamfered silicide layer and method for manufacturing the same
11/28/2002US20020175380 Cmos with a fixed charge in the gate dielectric
11/28/2002US20020175378 SOI substrate having an etch stop layer, and fabrication method thereof, SOI integrated circuit fabricated thereon, and method of fabricating SOI integrated circuit using the same
11/28/2002US20020175377 Electrostatic discharge protection devices and methods for the formation thereof
11/28/2002US20020175376 Semiconductor device and manufacturing method thereof
11/28/2002US20020175375 Semiconductor device
11/28/2002US20020175374 Semiconductor device and method for producing the same
11/28/2002US20020175372 Semiconductor device and method for manufacturing semiconductor device
11/28/2002US20020175370 Hybrid semiconductor field effect structures and methods
11/28/2002US20020175369 Method for low topography semiconductor device formation
11/28/2002US20020175368 Power mosfet semiconductor device and method of manufacturing the same
11/28/2002US20020175367 Trench DMOS transistor having a zener diode for protection from electro-static discharge
11/28/2002US20020175365 Vertical field effect transistor and manufacturing method thereof
11/28/2002US20020175360 Memory module having a memory cell and method for fabricating the memory module
11/28/2002US20020175358 Semiconductor memory device and method of manufacturing the same
11/28/2002US20020175351 Power semiconductor devices having retrograded-doped transition regions that enhance breakdown voltage characteristics and methods of forming same
11/28/2002US20020175350 Charge-coupled device
11/28/2002US20020175346 Field effect transistor and method for making the same
11/28/2002US20020175345 Semiconductor device
11/28/2002US20020175342 Two-mask trench schottky diode
11/28/2002US20020175341 Process for production of a nitride semiconductor device and a nitride semiconductor device
11/28/2002US20020175330 Method of forming three-dimensional photonic band structures in solid materials
11/28/2002US20020175328 Semiconductor device and method for manufacturing the same
11/28/2002US20020175327 Arrangement with a semiconductor component
11/28/2002US20020175326 Sub-nanoscale electronic devices and processes
11/28/2002US20020175317 Nucleic acid circuit elements and methods
11/28/2002US20020175298 Method of manufacturing semiconductor device
11/28/2002US20020175273 High speed electron tunneling device and applications
11/28/2002US20020175146 Structure and method to preserve STI during etching
11/28/2002US20020174958 Separating apparatus and processing method for plate memeber
11/28/2002US20020174708 Sensor device for detecting mechanical deformation
11/28/2002DE10222083A1 Insulating process used for a semiconductor device comprises forming an insulating mask layer pattern on zones of a semiconductor substrate, forming a trench up to a required height
11/28/2002DE10220173A1 Flüssigkristallanzeige-Vorrichtung und Verfahren zum Herstellen derselben A liquid crystal display device and method of manufacturing the same
11/28/2002DE10220129A1 Vergrösserung der Tiefgrabenkapazität durch eine zentrale Masseelektrode Enlargement of the deep grave capacity by a central ground electrode
11/28/2002DE10163429A1 HF-Schaltungschip, HF-Schaltungsvorrichtung mit HF-Schaltungschip und Herstellungsverfahren davon RF circuit chip, RF circuit device having RF circuit die and production method thereof
11/28/2002DE10123876A1 Nanotube array comprises a substrate, a catalyst layer having partial regions on the surface of the substrate, nanotubes arranged on the surface of the catalyst layer parallel
11/28/2002DE10123510A1 Production of a semiconductor element comprises depositing a polysilicon layer, a tungsten-containing precursor layer and a protective layer on a substrate, tempering, structuring and forming side wall spacers
11/28/2002DE10123363A1 Structure for integrated circuit arranged above substrate has elements separated by distance greater than/equal to resolution of lithographic technique used to structure at least parts of structure
11/28/2002DE10110611A1 Three plate plastics injection molding tool, has a sprue channel extended to feed cavities on both parting planes and locking system which locks together the front two or the rear two plates
11/28/2002CA2447722A1 Vertical metal oxide semiconductor field-effect diodes
11/28/2002CA2447089A1 Nucleic acid circuit elements and methods
11/27/2002EP1261036A2 Power MOSFET semiconductor device and method of manufacturing the same
11/27/2002EP1261035A2 Enhancement- and depletion-mode phemt device and method of forming same
11/27/2002EP1261034A2 Static induction thyristor
11/27/2002EP1261032A2 Semiconductor switching device
11/27/2002EP1261026A1 Device having resin package and method of producing the same
11/27/2002EP1261025A2 Semiconductor device and method of fabricating same
11/27/2002EP1259989A1 Monolithically integrated semiconductor component
11/27/2002EP1259787A1 Alternating voltage with resistance pressure sensor
11/27/2002EP1208385A4 Sensor design and process
11/27/2002EP0968533B1 High performance display pixel for electronic displays
11/27/2002EP0931333B1 Process for the manufacture of a highly epsilon-dielectric or ferroelectric coating
11/27/2002EP0812468B1 A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE
11/27/2002EP0731504B1 Process for the manufacturing of integrated circuits comprising lateral low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells
11/27/2002CN2522970Y Panel-display high-voltage device structure for driving chip
11/27/2002CN1381902A RF amplifier circuit
11/27/2002CN1381901A Complementing biopolar transistor and its manufacturing method
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