H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/21/2002	US20020171120 Semiconductor device
11/21/2002	US20020171116 Method for fabricating forward and reverse blocking devices
11/21/2002	US20020171114 Diaphragm-type semiconductor device and method for manufacturing diaphragm-type semiconductor device
11/21/2002	US20020171113 Semiconductor device and method of manufacturing the device
11/21/2002	US20020171112 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
11/21/2002	US20020171109 Semiconductor device with SOI structure and method of manufacturing the same
11/21/2002	US20020171108 Thin film transistor array substrate for liquid cystal display and a method for fabricating the same
11/21/2002	US20020171107 Method for forming a semiconductor device having elevated source and drain regions
11/21/2002	US20020171105 Polysilicon doped transistor using silicon-on-insulator and double silicon-on-insulator
11/21/2002	US20020171103 High voltage N-channel LDMOS devices built in a deep submicron CMOS process
11/21/2002	US20020171102 Non-volatile solid state image pickup device and its drive
11/21/2002	US20020171096 Schottky gate field effect transistor with high output characteristic
11/21/2002	US20020171093 Super-junction semiconductor device
11/21/2002	US20020171085 Semiconductor device and manufacturing method thereof
11/21/2002	US20020171084 Thin film transistor and method of fabricating the same
11/21/2002	US20020171083 Thin film transistor array substrate for liquid crystal display and a method for fabricating the same
11/21/2002	US20020171079 Microelectronic components and electronic networks comprising dna
11/21/2002	US20020171078 Metal-oxide electron tunneling device for solar energy conversion
11/21/2002	US20020171076 Enhancement- and depletion-mode PHEMT device having two ingap etch-stop layers and method of forming same
11/21/2002	US20020170875 Method for production of a semiconductor component and a semiconductor component produced by said method
11/21/2002	US20020170355 Accelerometer strain isolator
11/21/2002	US20020170175 Method for producing micromechanical structures
11/21/2002	DE19933632C2 Verfahren zur Herstellung von Monolagen aus Silizium-Nanoclustern in Siliziumdioxid Process for the preparation of monolayers of silicon nanoclusters in silica
11/21/2002	DE10221808A1 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
11/21/2002	DE10122846A1 Halbleiterbauelement mit hochspannungstauglichem Randabschluss Semiconductor component with hochspannungstauglichem edge termination
11/21/2002	DE10122364A1 Kompensationsbauelement, Schaltungsanordnung und Verfahren Compensation device, circuit and method
11/21/2002	DE10122362A1 Semiconductor element used as a MOSFET or IGBT arranged in a semiconductor body comprises a source and a drain zone of first conductivity, a body zone arranged between the source and drain zones, and a gate electrode
11/21/2002	DE10122361A1 Semiconductor element used as a MOSFET or IGBT comprises a semiconductor layer of first conductivity embedded in semiconductor body
11/21/2002	DE10122072A1 Semiconductor emitter element used in semiconductor diode lasers comprises semiconductor layer systems with electrically conducting layers, and a control element for applying voltage pulses between the electrically conducting layers
11/21/2002	CA2447485A1 Chemically assembled nano-scale circuit elements
11/21/2002	CA2447058A1 Group-iii nitride based high electron mobility transistor (hemt) with barrier/spacer layer
11/21/2002	CA2443512A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/20/2002	EP1258923A2 Semiconductor memory device and manufacturing method for the same
11/20/2002	EP1258911A2 Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same
11/20/2002	EP1258042A1 Mos transistor for high density integration circuits
11/20/2002	EP1258041A2 Supermolecular structures and devices made from same
11/20/2002	EP1258040A1 Vertical conduction flip-chip device with bump contacts on single surface
11/20/2002	EP1258039A1 Communicating device
11/20/2002	EP1258038A1 Semiconductor devices
11/20/2002	EP1258033A1 Tungsten gate electrode method and device
11/20/2002	EP1258032A1 Method for producing defined polycrystalline silicon areas in an amorphous silicon layer
11/20/2002	EP1258031A1 Semiconductor structure
11/20/2002	EP1258030A1 A process for forming a semiconductor structure
11/20/2002	EP1258027A2 Semiconductor structure
11/20/2002	EP1257496A2 Method for producing a micromechanical component, and a component produced according to said method
11/20/2002	CN1381071A Integrated circuit with programmable memory element
11/20/2002	CN1380700A Panel display and manufacturing method thereof
11/20/2002	CN1380697A Non-volatibility semiconductor memory
11/20/2002	CN1380578A 液晶显示装置 The liquid crystal display device
11/20/2002	CN1094658C Power semiconductor device and method of fabricating the same
11/20/2002	CN1094654C Insulated gate semiconductor device and method of manufacture
11/20/2002	CN1094652C Method of manufacturing semiconductor device with crystallizing semiconductor film
11/19/2002	US6484054 Deep trench semiconductor capacitors having reverse bias diodes for implantable medical devices
11/19/2002	US6483749 Nonvolatile memory device having bulk bias contact structure in cell array region
11/19/2002	US6483560 Liquid crystal device having metal light shielding layer with portions at different potentials
11/19/2002	US6483375 Low power operation mechanism and method
11/19/2002	US6483365 Semiconductor device
11/19/2002	US6483283 Semiconductor dynamic quantity-sensor and method of manufacturing the same
11/19/2002	US6483196 Flip chip led apparatus
11/19/2002	US6483171 Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
11/19/2002	US6483170 RF power transistor
11/19/2002	US6483164 Schottky barrier diode
11/19/2002	US6483159 Undoped polysilicon as the floating-gate of a split-gate flash cell
11/19/2002	US6483158 Semiconductor memory device and fabrication method therefor
11/19/2002	US6483157 Asymmetrical transistor having a barrier-incorporated gate oxide and a graded implant only in the drain-side junction area
11/19/2002	US6483156 Double planar gated SOI MOSFET structure
11/19/2002	US6483155 Semiconductor device having pocket and manufacture thereof
11/19/2002	US6483151 Semiconductor device and method of manufacturing the same
11/19/2002	US6483149 LDMOS device with self-aligned resurf region and method of fabrication
11/19/2002	US6483148 Self-aligned elevated transistor
11/19/2002	US6483146 Nonvolatile semiconductor memory device and manufacturing method thereof
11/19/2002	US6483144 Semiconductor device having self-aligned contact and landing pad structure and method of forming same
11/19/2002	US6483138 Semiconductor apparatus formed by SAC (self-aligned contact)
11/19/2002	US6483137 Ferroelectricity
11/19/2002	US6483135 Field effect transistor
11/19/2002	US6483134 Integrated circuits with immunity to single event effects
11/19/2002	US6483133 EEPROM with high channel hot carrier injection efficiency
11/19/2002	US6483128 Connecting device for power semiconductor modules with compensation for mechanical stresses
11/19/2002	US6483125 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
11/19/2002	US6483124 Thin film transistors and their manufacture
11/19/2002	US6482739 Method for decreasing the resistivity of the gate and the leaky junction of the source/drain
11/19/2002	US6482737 Fabrication method of implanting silicon-ions into the silicon substrate
11/19/2002	US6482730 Method for manufacturing a semiconductor device
11/19/2002	US6482729 Method of generating spin-polarized conduction electron and semiconductor device
11/19/2002	US6482728 Method for fabricating floating gate
11/19/2002	US6482726 Control trimming of hard mask for sub-100 nanometer transistor gate
11/19/2002	US6482725 Gate formation method for reduced poly-depletion and boron penetration
11/19/2002	US6482724 Integrated circuit asymmetric transistors
11/19/2002	US6482722 Process of crystallizing semiconductor thin film and laser irradiation system
11/19/2002	US6482720 Method for manufacturing compound semiconductor device
11/19/2002	US6482714 Semiconductor device and method of manufacturing the same
11/19/2002	US6482712 Method for fabricating a bipolar semiconductor device
11/19/2002	US6482711 InPSb/InAs BJT device and method of making
11/19/2002	US6482710 Bipolar transistor and manufacting method thereof
11/19/2002	US6482709 Manufacturing process of a MOS transistor
11/19/2002	US6482708 Nonvolatile memory device and method for manufacturing the same
11/19/2002	US6482705 Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed
11/19/2002	US6482704 Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances
11/19/2002	US6482701 Integrated gate bipolar transistor and method of manufacturing the same
11/19/2002	US6482700 Split gate field effect transistor (FET) device with enhanced electrode registration and method for fabrication thereof

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