Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/31/2002US20020158313 Heterojunction bipolar transistor and method for fabricating the same
10/31/2002US20020158312 Devices with patterned wells and method for forming same
10/31/2002US20020158311 Semiconductor device and method for fabricating the same
10/31/2002US20020158309 High breakdown voltage transistor and method
10/31/2002US20020158308 Semiconductor component and method for fabricating it
10/31/2002US20020158307 Laminated body, capacitor, electronic part, and method and device for manufacturing the laminated body, capacitor, and electronic part
10/31/2002US20020158303 Semiconductor device and method of fabricating same
10/31/2002US20020158299 Mask configurable smart power circuits - applications and GF-NMOS devices
10/31/2002US20020158298 Semiconductor device and active matrix type display
10/31/2002US20020158295 Electrochemical device
10/31/2002US20020158292 Method of making field effect transistor
10/31/2002US20020158291 Salicide block for silicon-on-insulator (SOI) applications
10/31/2002US20020158290 High voltage device and method for fabricating the same
10/31/2002US20020158288 Semiconductor device and manufacturing method thereof
10/31/2002US20020158287 Trench-type MOSFET having a reduced device pitch and on-resistance
10/31/2002US20020158286 Symmetric device with contacts self aligned to gate
10/31/2002US20020158285 Nonvolatile floating-gate memory devices, and process of fabrication
10/31/2002US20020158280 Semiconductor memory device and fabrication method therefor
10/31/2002US20020158277 Semiconductor integrated circuit device and manufacturing method therefor
10/31/2002US20020158273 Nonvolatile semiconductor memory device and a method of manufacturing the same
10/31/2002US20020158270 Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof
10/31/2002US20020158269 Thin film transistor
10/31/2002US20020158254 Memory system capable of operating at high temperatures and method for fabricating the same
10/31/2002US20020158251 Semiconductor device and method for fabricating the same
10/31/2002US20020158250 Semiconductor device and process for producing the same
10/31/2002US20020158248 Thin-film transistor and its manufacturing method
10/31/2002US20020158246 Semiconductor device and manufacturing method for the same
10/31/2002US20020157949 Field-effect transistor
10/31/2002US20020157475 Sensor with built-in circuits and pressure detector using the same
10/31/2002DE10160118A1 Halbleiterelement Semiconductor element
10/31/2002DE10121132A1 Verfahren zum Erzeugen einer metallischen oder metallhaltigen Schicht unter Verwendung eines Präkursors auf einer silizium- oder germaniumhaltigen Schicht, insbesondere eines elektronischen Bauelements A method of producing a metallic or metal-containing layer using a precursor on a silicon-or germanium-containing layer, in particular an electronic component
10/31/2002DE10120877A1 Anordnung mit einem Halbleiterbauelement Assembly comprising a semiconductor device
10/31/2002DE10120656A1 Semiconductor element comprises a semiconductor body having electrodes in which regions of one conducting type and regions of a further opposing conducting type are arranged in a drift zone
10/31/2002DE10120523A1 Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates A method for minimizing the Wolframoxidausdampfung in the selective oxidation side wall of tungsten-silicon gate
10/31/2002CA2444681A1 Nanoelectronic devices and circuits
10/30/2002EP1253718A1 Driving circuit and display device using the same
10/30/2002EP1253648A1 P-channel field-effect transistor
10/30/2002EP1253647A2 Dielectric for a semiconductor device
10/30/2002EP1253646A1 Insulating barrier
10/30/2002EP1253645A2 Lateral transistor having graded base region, semiconductor intergrated circuit and fabrication method thereof
10/30/2002EP1253642A2 A semiconductor device and a method of manufacturing the same
10/30/2002EP1253634A2 Semiconductor device
10/30/2002EP1253632A2 Novel transistor with ultra shallow tip and method of fabrication
10/30/2002EP1253108A2 Method of fabricating suspended microstructures
10/30/2002EP1252661A2 Trench insulated-gate bipolar transistor with improved safe-operating-area
10/30/2002EP1252660A2 Bipolar transistor
10/30/2002EP1252659A1 Strained-silicon metal oxide semiconductor field effect transistors
10/30/2002EP1252658A1 Silicon nanoparticle field effect transistor and transistor memory device
10/30/2002EP1252657A1 Mos field effect transistor arrangement
10/30/2002EP1252656A1 Protection device for schottky diodes
10/30/2002CN1377311A Silicon carbide epitaxial layers grown on substrates offcut towards
10/30/2002CN1377094A Diode suitable for technology of automatic aligning to metallic silicide
10/30/2002CN1377093A High-voltage semiconductor device
10/30/2002CN1377092A 半导体器件 Semiconductor devices
10/30/2002CN1377091A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
10/30/2002CN1377067A Manufacturing method for semiconductor device and semiconductor device
10/30/2002CN1377065A Self-aligned bipolar junction-type transistor and its making method
10/30/2002CN1377020A Liquid crystal display device and assembly method thereof
10/30/2002CN1093687C Transistor and method for forming the same
10/29/2002US6473454 Rake combiner apparatus using charge transfer element
10/29/2002US6473342 Methods of operating split-gate type non-volatile memory cells
10/29/2002US6473290 Capacitance-type external-force detecting device with improved sensitivity
10/29/2002US6472923 Semiconductor device
10/29/2002US6472753 BICMOS semiconductor integrated circuit device and fabrication process thereof
10/29/2002US6472752 Flash memory device
10/29/2002US6472750 Process for realizing an intermediate dielectric layer for enhancing the planarity in semiconductor electronic devices
10/29/2002US6472738 Compound semiconductor device
10/29/2002US6472730 Semiconductor device and method of manufacturing the same
10/29/2002US6472729 Semiconductor device
10/29/2002US6472722 Termination structure for high voltage devices
10/29/2002US6472718 Semiconductor device
10/29/2002US6472716 Semiconductor device with a well wherein a scaling down of the layout is achieved
10/29/2002US6472713 Semiconductor device having vertical bipolar transistor
10/29/2002US6472712 Gate width determining layer of a second semiconductor conductivity type formed on the surface of said substrate isolated by pn junction from pair of source/drain layers;
10/29/2002US6472710 Field MOS transistor and semiconductor integrated circuit including the same
10/29/2002US6472709 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
10/29/2002US6472708 Trench MOSFET with structure having low gate charge
10/29/2002US6472707 Semiconductor memory device
10/29/2002US6472706 Semiconductor device
10/29/2002US6472705 Molecular memory & logic
10/29/2002US6472704 Semiconductor device having contact hole and method of manufacturing the same
10/29/2002US6472701 Non-volatile semiconductor memory device and its manufacturing method
10/29/2002US6472700 Semiconductor device with isolation insulator, interlayer insulation film, and a sidewall coating film
10/29/2002US6472693 Semiconductor device and method of manufacturing the same
10/29/2002US6472692 Semiconductor device
10/29/2002US6472686 Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control
10/29/2002US6472685 Semiconductor device
10/29/2002US6472684 Nonvolatile memory and manufacturing method thereof
10/29/2002US6472683 Semiconductor quantum oscillation device
10/29/2002US6472681 Quantum computer
10/29/2002US6472680 Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
10/29/2002US6472679 Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication
10/29/2002US6472678 Trench MOSFET with double-diffused body profile
10/29/2002US6472329 Etching aluminum over refractory metal with successive plasmas
10/29/2002US6472298 Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element
10/29/2002US6472297 Method of producing TFT array substrate for liquid crystal display device
10/29/2002US6472294 Semiconductor processing method for processing discrete pieces of substrate to form electronic devices
10/29/2002US6472287 Manufacturing method of semiconductor with a cleansing agent
10/29/2002US6472286 Bipolar ESD protection structure
10/29/2002US6472284 Method for fabricating a MOSFET having a thick and thin pad oxide at the gate sides
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