Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/23/2002EP1251720A2 Organic semiconductor diode and organic electroluminescence element display device
10/23/2002EP1251564A2 Non-volatile semiconductor memory device and manufacturing method thereof
10/23/2002EP1251563A2 FET structures having symmetric and/or distributed feedforward capacitor connections
10/23/2002EP1251562A1 Nanoelectronic devices and circuits
10/23/2002EP1251560A1 Cluster globular semiconductor device
10/23/2002EP1251555A2 Method of fabricating HBT devices
10/23/2002EP1250714A1 Nitridation barriers for nitridated tunnel oxide for circuitry for flash memory technology and for locos/sti isolation
10/23/2002EP1250565A1 Angular rate sensor
10/23/2002EP1208607A4 Passivation of gan based fets
10/23/2002EP0902981B1 Schottky barrier rectifier
10/23/2002CN1376313A Non-volatile memory structure for twin-bit storage and methods of making same
10/23/2002CN1376312A Ferroelectric transistor and use thereof in a memory cell arrangement
10/23/2002CN1376311A 铁电晶体管 The ferroelectric transistor
10/23/2002CN1376310A Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
10/23/2002CN1376309A Encapsulated tungsten gate MOS transistor and memory cell and method of making same
10/23/2002CN1375891A Electric connecting structure, its producing method and electric wiring method
10/23/2002CN1375880A Semiconductor and its making method
10/23/2002CN1375879A Semiconductor device, its making method and liquid spraying apparatus
10/23/2002CN1375878A 晶体管 Transistors
10/23/2002CN1375859A Method for making semiconductor device
10/23/2002CN1375735A Display apparatus and its mfg. method
10/23/2002CN1375733A Liquid crystal display device having bimetallic layer source electrode and drain electrode and its manufacturing method
10/23/2002CN1093320C Piezoelectric element and method of manufacturing the same
10/23/2002CN1093319C Semiconductor device, ferroelectric capacitor, and process for forming the same
10/22/2002US6469950 Static memory cell having independent data holding voltage
10/22/2002US6469939 Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process
10/22/2002US6469928 Nonvolatile semiconductor memory device with concurrent memory access and data locking
10/22/2002US6469775 Photolithographic device is registered to the wafer-in-process to prevent radiant energy from being directly transmitted into the photoresist material overlaying the vias.
10/22/2002US6469769 Manufacturing method of a liquid crystal display
10/22/2002US6469390 Device comprising thermally stable, low dielectric constant material
10/22/2002US6469368 Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method
10/22/2002US6469367 Bipolar transistor
10/22/2002US6469366 Bipolar transistor with collector diffusion layer formed deep in the substrate
10/22/2002US6469359 Semiconductor device and a method for production thereof
10/22/2002US6469357 Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
10/22/2002US6469351 Electrostatic breakdown prevention circuit for semiconductor device
10/22/2002US6469350 Active well schemes for SOI technology
10/22/2002US6469349 The gate, source, and drain electrodes of the mos transistor are formed in the trenches in the semiconductor substrate, and the transistor is surrounded by a thick sio2 film, so that a transistor of stable characteristics is obtained.
10/22/2002US6469348 Nonvolatile semiconductor memory device
10/22/2002US6469347 Buried-channel semiconductor device, and manufacturing method thereof
10/22/2002US6469346 High-breakdown-voltage semiconductor device
10/22/2002US6469345 Semiconductor device and method for manufacturing the same
10/22/2002US6469344 Semiconductor device having low on resistance high speed turn off and short switching turn off storage time
10/22/2002US6469343 Multi-level type nonvolatile semiconductor memory device
10/22/2002US6469342 Silicon nitride read only memory that prevents antenna effect
10/22/2002US6469341 Floating gate overlying a dielectric layer over an active region, that a side wall that has a slant edge defining a generally concave-shaped undercut edge, and vertical edges above said slant edge.
10/22/2002US6469340 Flash memory device with an inverted tapered floating gate
10/22/2002US6469339 A void within an opening filled with bpteos film suppresses occurrence of crystal defects in the silicon substrate, and the semiconductor device ensuring high reliability and high yield is obtained.
10/22/2002US6469338 Non-volatile semiconductor memory device and manufacturing method thereof
10/22/2002US6469334 Ferroelectric field effect transistor
10/22/2002US6469330 Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections
10/22/2002US6469326 Radio frequency modules and modules for moving target detection
10/22/2002US6469325 Semiconductor integrated circuit device and its manufacture
10/22/2002US6469319 Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same
10/22/2002US6469318 Semiconductor device having thin film transistor for supplying current to driven element
10/22/2002US6469317 Semiconductor device and method of fabricating the same
10/22/2002US6469315 Semiconductor device and method of manufacturing the same
10/22/2002US6468916 Etching polymer layer
10/22/2002US6468914 Method of forming gate electrode in semiconductor device
10/22/2002US6468904 RPO process for selective CoSix formation
10/22/2002US6468902 Semiconductor device and its manufacturing method
10/22/2002US6468900 Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface
10/22/2002US6468899 Contactless local interconnect process utilizing self-aligned silicide
10/22/2002US6468890 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device
10/22/2002US6468888 Method for forming polysilicon-germanium gate in CMOS transistor and device made thereby
10/22/2002US6468887 Semiconductor device and a method of manufacturing the same
10/22/2002US6468878 SOI LDMOS structure with improved switching characteristics
10/22/2002US6468877 Method to form an air-gap under the edges of a gate electrode by using disposable spacer/liner
10/22/2002US6468874 Method of manufacturing a capacitor in a semiconductor device
10/22/2002US6468872 Method of fabricating a thin film transistor
10/22/2002US6468871 Method of forming bipolar transistor salicided emitter using selective laser annealing
10/22/2002US6468870 Method of fabricating a LDMOS transistor
10/22/2002US6468866 Single feature size MOS technology power device
10/22/2002US6468864 Method of fabricating silicon nitride read only memory
10/22/2002US6468863 Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof
10/22/2002US6468861 Method for manufacturing non-volatile semiconductor memory
10/22/2002US6468856 High charge storage density integrated circuit capacitor
10/22/2002US6468847 Method of fabricating a high-voltage transistor
10/22/2002US6468845 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
10/22/2002US6468844 Preparation method of semiconductor device
10/22/2002US6468843 Barrier overlapping impurities doped zones
10/22/2002US6468840 Active matrix substrate and manufacturing method thereof
10/22/2002US6468839 Thin film semiconductor device for display and method of producing same
10/22/2002US6468837 Reduced surface field device having an extended field plate and method for forming the same
10/22/2002US6468822 Method for manufacturing electro-optic element
10/22/2002US6468812 Method for producing a semiconductor memory device with a multiplicity of memory cells
10/22/2002US6468742 Detecting the hybridization of the reporter oligonucleotide to the target nucleic acid
10/22/2002US6468638 Electrically coupling an electrical interconnect layer on a flexible layer to blocks of a substrate; forming displays such as flat panel displays
10/22/2002US6468584 Transparent conductive thin film of ito, snsbo, znalo or the like or a metal thin film of al or the like by thick film printing coated with photoresist, photolithography provides patterns, fluorescent display device for graphic display
10/22/2002US6467349 Arrangement for measuring angular velocity
10/22/2002US6467348 Microgyroscope with two resonant plates
10/17/2002WO2002082602A2 Semiconductor laser with reduced temperature sensitivity
10/17/2002WO2002082560A1 Self-aligned contact doping for organic field effect transistors
10/17/2002WO2002082556A1 Overvoltage protection device
10/17/2002WO2002082555A2 Matrix array devices with flexible substrates
10/17/2002WO2002082554A1 Semiconductor device and method for manufacture thereof
10/17/2002WO2002082553A1 Semiconductor device
10/17/2002WO2002082552A1 Semiconductor power component and corresponding production method
10/17/2002WO2002082551A1 A semiconductor structure exhibiting reduced leakage current
10/17/2002WO2002082548A2 Integrated tuneable capacitor
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