Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/14/2002DE10121549A1 Bauelement auf GaAs und Herstellungsverfahren On GaAs device and manufacturing method
11/14/2002DE10121494A1 Transistor und integrierter Schaltkreis Transistor and integrated circuit
11/14/2002DE10120520A1 Halbleiterbauelement und Herstellungsverfahren A semiconductor device and manufacturing method
11/14/2002DE10107142A1 Production of a chip-like semiconductor component used as a FET chip comprises using chip side edges for contacting an electrode of the component
11/13/2002EP1256986A2 Single electron memory device and method for manufacturing the same
11/13/2002EP1256985A2 Lateral power MISFET
11/13/2002EP1256983A2 Flexible integrated monolithic circuit
11/13/2002EP1256836A2 LCD with bus lines overlapped by pixel electrodes and insulating layer therebetween
11/13/2002EP1256133A2 Mos-gated semiconductor device having alternating conductivity type semiconductor regions and method of making the same
11/13/2002EP1256117A1 Method to provide a reduced constant e-field during erase of eeproms for reliability improvement
11/13/2002EP1256116A2 Flash memory architecture employing three layer metal interconnect
11/13/2002EP1256010A1 Device for detecting a magnetic field, magnetic field measurer and current meter
11/13/2002EP1144198B1 Thermal transfer element for forming multilayer devices
11/13/2002EP0853821B1 Semiconductor diode with suppression of auger generation processes
11/13/2002EP0706715B1 Electrical charge transfer apparatus
11/13/2002EP0626099B1 Method of manufacturing a high density electronic circuit module
11/13/2002CN1379914A Thin-film transistor, method of manufacturing thereof and thin-film transistor LCD
11/13/2002CN1379482A Semiconductor device and active matrix type dispaly apparatus
11/13/2002CN1379481A MOS package and its making method
11/13/2002CN1379480A Semiconductor device and its manufacturing method
11/13/2002CN1379479A Electric semiconductor device
11/13/2002CN1379477A Structure of silicon on insulating layer with substrate contact
11/13/2002CN1379464A Semiconductor crystal plate and its manufacturing method and semiconductor device and its manufacturing method
11/13/2002CN1379459A Apparatus used for evaluating polycrystalline silicon film
11/13/2002CN1379452A Film transistor and its manufacturing method
11/13/2002CN1379429A Method of making image forming device
11/13/2002CN1379277A Manufacturing method of liquid crystal display array substrate
11/12/2002US6480577 Active matrix substrate, method of manufacturing same, and flat-panel image sensor
11/12/2002US6480426 Semiconductor integrated circuit device
11/12/2002US6480420 Semiconductor memory device having source areas of memory cells supplied with a common voltage
11/12/2002US6480418 Semiconductor non-volatile storage
11/12/2002US6480415 Nonvolatile semiconductor memory device
11/12/2002US6480059 Method to reduce timing skews in I/O circuits and clock drivers caused by fabrication process tolerances
11/12/2002US6480056 Network of triacs with gates referenced with respect to a common opposite face electrode
11/12/2002US6480044 Semiconductor circuit configuration
11/12/2002US6479896 Semiconductor device having protective layer
11/12/2002US6479883 Electrostatic discharge protection circuit
11/12/2002US6479882 Current-limiting device
11/12/2002US6479878 Semiconductor device and semiconductor electret condenser microphone
11/12/2002US6479877 Semiconductor device for load drive circuit
11/12/2002US6479876 Vertical power MOSFET
11/12/2002US6479873 Semiconductor device with self-aligned contact structure
11/12/2002US6479868 Silicon-on-insulator transistors with asymmetric source/drain junctions formed by angled germanium implantation
11/12/2002US6479867 Thin film transistor
11/12/2002US6479866 SOI device with self-aligned selective damage implant, and method
11/12/2002US6479865 SOI device and method of fabricating the same
11/12/2002US6479864 Semiconductor structure having a plurality of gate stacks
11/12/2002US6479863 Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
11/12/2002US6479862 Charge trapping device and method for implementing a transistor having a negative differential resistance mode
11/12/2002US6479860 Semiconductor memory device
11/12/2002US6479859 Split gate flash memory with multiple self-alignments
11/12/2002US6479858 Method and apparatus for a semiconductor device with adjustable threshold voltage
11/12/2002US6479852 Memory cell having a deep trench capacitor and a vertical channel
11/12/2002US6479847 Method for complementary oxide transistor fabrication
11/12/2002US6479846 Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity
11/12/2002US6479844 Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
11/12/2002US6479843 Single supply HFET with temperature compensation
11/12/2002US6479842 Field effect transistor with a quantum-wave interference layer
11/12/2002US6479841 Power component state detector
11/12/2002US6479840 Diode
11/12/2002US6479838 Thin film transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device
11/12/2002US6479837 Thin film transistor and liquid crystal display unit
11/12/2002US6479411 Method for forming high quality multiple thickness oxide using high temperature descum
11/12/2002US6479404 Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer
11/12/2002US6479403 Method to pattern polysilicon gates with high-k material gate dielectric
11/12/2002US6479398 Method of manufacturing an amorphous-silicon thin film transistor
11/12/2002US6479392 Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device
11/12/2002US6479365 Single electron transistor using porous silicon and manufacturing method thereof
11/12/2002US6479362 Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof
11/12/2002US6479360 Semiconductor device and manufacturing method
11/12/2002US6479357 Method for fabricating semiconductor device with copper gate electrode
11/12/2002US6479356 Method of manufacturing a semiconductive device with an enhanced junction breakdown strength
11/12/2002US6479352 Method of fabricating high voltage power MOSFET having low on-resistance
11/12/2002US6479351 Method of fabricating a self-aligned non-volatile memory cell
11/12/2002US6479349 Laser transceiver system controller
11/12/2002US6479348 Method of making memory wordline hard mask extension
11/12/2002US6479346 Semiconductor memory device and fabrication method thereof
11/12/2002US6479342 Semiconductor devices and manufacturing methods thereof
11/12/2002US6479334 Thin film transistor and semiconductor device and method for forming the same
11/12/2002US6479332 Methods of forming integrated circuitry
11/12/2002US6479330 Semiconductor device and method for manufacturing the same
11/12/2002US6479304 Iridium composite barrier structure and method for same
11/12/2002US6478263 Semiconductor device and its manufacturing method
11/12/2002CA2214306C Mos systems and methods of use
11/07/2002WO2002089214A1 Eeprom cell with asymmetric thin window
11/07/2002WO2002089210A1 Organic electroluminescent device and a method of manufacturing thereof
11/07/2002WO2002089201A1 Improved salicide block for silicon-on-insulator (soi) applications
11/07/2002WO2002089196A2 Trench-gate semiconductor devices and their manufacture
11/07/2002WO2002089195A2 Method of manufacturing a trench-gate semiconductor device
11/07/2002WO2002089193A1 Method of wet etching a silicon and nitrogen containing material
11/07/2002WO2002089192A1 Method of wet etching an inorganic antireflection layer
11/07/2002WO2002089190A2 Method for minimizing tungsten oxide evaporation during selective sidewall oxidation of tungsten-silicon gates
11/07/2002WO2002089182A2 Recessed gat dram transistor and method
11/07/2002WO2002089180A2 Method of enhanced oxidation of mos transistor gate corners
11/07/2002WO2002089178A2 Embedded metal nanocrystals
11/07/2002WO2002089177A2 A contact structure of a wiring line and method manufacturing the same, and thin film transistor array substrate including the contact structure and method manufacturing the same
11/07/2002WO2002088419A1 Method for production of a metallic or metal-containing layer
11/07/2002WO2002075818A3 Inductive storage capacitor
11/07/2002WO2002067328A3 Organic light emitting diode display having shield electrodes
11/07/2002WO2002054447A3 System and method for prototyping and fabricating complex microwave circuits