H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/27/2002	CN1381900A Lateral transistor with graded base region, semiconductor integrated circu8it and manufacturing method
11/27/2002	CN1381898A Panel display and its manufacturing method
11/27/2002	CN1381894A Complementary bipolar transistor and its manufacturing method
11/27/2002	CN1381893A Complementary bipolar transistor and its manufacturing method
11/27/2002	CN1095205C Method of manufacturing multilayer solar cell and semiconductor structure
11/27/2002	CN1095204C Semiconductor device and transistor
11/27/2002	CN1095200C Method for fabricating nonvolatile memory device
11/27/2002	CN1095196C Transistor with ultra shallow tip and method of fabrication thereof
11/27/2002	CN1095074C High pressure sensor and method for manufacturing it
11/26/2002	US6487700 Semiconductor device simulating apparatus and semiconductor test program debugging apparatus using it
11/26/2002	US6487122 Multi-value semiconductor memory device with write verify circuit
11/26/2002	US6487120 Boosted voltage generating circuit and semiconductor memory device having the same
11/26/2002	US6487117 Method for programming NAND-type flash memory device using bulk bias
11/26/2002	US6487112 Single-electron memory
11/26/2002	US6486929 Bonded layer semiconductor device
11/26/2002	US6486532 Structure for reduction of base and emitter resistance and related method
11/26/2002	US6486528 Silicon segment programming apparatus and three terminal fuse configuration
11/26/2002	US6486524 Ultra low Irr fast recovery diode
11/26/2002	US6486523 Power semiconductor device with temperature detector
11/26/2002	US6486520 Structure and method for a large-permittivity gate using a germanium layer
11/26/2002	US6486514 Wiring line assembly for thin film transistor array substrate and a method for fabricating the same
11/26/2002	US6486513 Semiconductor device
11/26/2002	US6486512 Power semiconductor device having high breakdown voltage and method for fabricating the same
11/26/2002	US6486511 Solid state RF switch with high cutoff frequency
11/26/2002	US6486510 Reduction of reverse short channel effects by implantation of neutral dopants
11/26/2002	US6486509 Non-volatile memory cell
11/26/2002	US6486508 Non-volatile semiconductor memory devices with control gates overlapping pairs of floating gates
11/26/2002	US6486507 Split gate type memory cell having gate insulating layers appropriately regulated in thickness and process of fabrication thereof
11/26/2002	US6486506 Flash memory with less susceptibility to charge gain and charge loss
11/26/2002	US6486502 Nitride based transistors on semi-insulating silicon carbide substrates
11/26/2002	US6486501 Component with rectifying function, fulfilled by means of charge transport by ions
11/26/2002	US6486500 Led structure having a schottky contact and manufacturing method
11/26/2002	US6486497 Liquid crystal device, projection type display device and driving circuit
11/26/2002	US6486496 Polysilicon thin film transistor structure
11/26/2002	US6486494 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
11/26/2002	US6486489 Transistor
11/26/2002	US6486080 Chemical vapor deposition; reacting a precursor such as metal alkoxide, metal alkoxide containing halogen, metal beta-diketonate, metal oxoacid, metal acetate, or metal alkene with oxidant gas, annealing for densification
11/26/2002	US6486071 Spherical shaped semiconductor integrated circuit
11/26/2002	US6486048 Method for fabricating a semiconductor device using conductive oxide and metal layer to silicide source + drain
11/26/2002	US6486046 Method of forming polycrystalline semiconductor film
11/26/2002	US6486035 Semiconductor device and method for fabricating the same
11/26/2002	US6486034 Method of forming LDMOS device with double N-layering
11/26/2002	US6486032 Method for fabricating control gate and floating gate of a flash memory cell
11/26/2002	US6486031 Method of making an EEPROM cell with asymmetric thin window
11/26/2002	US6486030 Methods of forming field effect transistors and integrated circuitry including TiN gate element
11/26/2002	US6486028 Method of fabricating a nitride read-only-memory cell vertical structure
11/26/2002	US6486014 Semiconductor device and method of manufacturing the same
11/26/2002	US6486011 JFET structure and manufacture method for low on-resistance and low voltage application
11/26/2002	US6486010 Method for manufacturing thin film transistor panel
11/26/2002	US6486009 Method of fabricating thin-film transistor
11/26/2002	US6485997 Method for manufacturing fringe field switching mode liquid crystal display device
11/21/2002	WO2002093662A2 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
11/21/2002	WO2002093652A1 Structure for an integrated circuit arrangement arranged over a substrate
11/21/2002	WO2002093651A1 Channel gate type field effect transistor and its manufacturing method
11/21/2002	WO2002093650A1 Group-iii nitride based high electron mobility transistor (hemt) with barrier/spacer layer
11/21/2002	WO2002093635A1 Semiconductor integrated circuit device and production method thereof
11/21/2002	WO2002093629A1 Production method for a semiconductor component
11/21/2002	WO2002093180A1 Accelerometer strain relief structure
11/21/2002	WO2002092886A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/21/2002	WO2002092857A1 Chemically assembled nano-scale circuit elements
11/21/2002	WO2002092505A2 Nanotube array and method for producing a nanotube array
11/21/2002	WO2002078095A3 Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate
11/21/2002	WO2002054495A3 Metal oxynitrides on monocrystalline substrates
11/21/2002	WO2002027799A3 Process for the fabrication of mosfet devices depletion, silicided source and drain junctions
11/21/2002	WO2002017362A8 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/21/2002	WO2002015252A3 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device
11/21/2002	US20020173155 Thin-film-transistor-array substrate, thin-film-transistor-array fabrication method, and display device
11/21/2002	US20020173147 Thin film semiconductor device and method for producing the same
11/21/2002	US20020173130 Vapor deposition using silane and dopant gas mixture; overcoating with dielectrics and electrodes; controlling concentration of gas mixture
11/21/2002	US20020173128 Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices
11/21/2002	US20020173122 In-situ of dichloroethene and NH3 in an H2O steam based oxidation system to provide a source of chlorine
11/21/2002	US20020173120 Multilayer structure; polishing surfaces; vertical bonding
11/21/2002	US20020173113 Vapor deposition; doping
11/21/2002	US20020173111 Multilayer; lower electrode, ferroelectricity film and electrode
11/21/2002	US20020173108 Forming photoresist on semiconductor substrate; lithography; masking; etching
11/21/2002	US20020173106 Method for forming variable-K gate dielectric
11/21/2002	US20020173104 Method for preventing gate depletion effects of MOS transistor
11/21/2002	US20020173100 Process for manufacturing semiconductor memory device and semiconductor memory device
11/21/2002	US20020173091 Stripe separation zones
11/21/2002	US20020173088 Method of forming a MOS transistor on a semiconductor wafer
11/21/2002	US20020173085 Reducing impurities during oxidation
11/21/2002	US20020173083 Methodology for electrically induced selective breakdown of nanotubes
11/21/2002	US20020173065 Method for forming a compact sensing apparatus in a dual-piece monolithic substrate
11/21/2002	US20020172887 Electroluminescence; optics; electronics
11/21/2002	US20020172820 Lasers
11/21/2002	US20020172774 Method of n2o annealing an oxide layer on a silicon carbide layer
11/21/2002	US20020172768 Irradiating alternately an organometal compound as a source material and either of oxygen radicals, nitrogen radicals and a mixture of oxygen radicals and nitrogen radicals as an oxidizing or nitriding agent for depositing monoatomic layer
11/21/2002	US20020172756 Method for selectively oxidizing a silicon/metal composite film stack
11/21/2002	US20020172639 Applying carbon nanotubes to low-viscosity dispersion medium to obtain a high-viscosity dispersing liquid which includes carbon nanotubes; forming a network of carbon nanotubes having electrical and/or magnetic connections by removing
11/21/2002	US20020172382 Pressure responsive device and method of manufacturing semiconductor substrate for use in pressure responsive device
11/21/2002	US20020172064 Passivation layer for molecular electronic device fabrication
11/21/2002	US20020171920 Optical signal processing method and apparatus
11/21/2002	US20020171781 Thin film transistor array substrate for liquid crystal display
11/21/2002	US20020171156 Semiconductor device, method of connecting a semiconductor chip, circuit board, and electronic equipment
11/21/2002	US20020171146 Compound structure for reduced contact resistance
11/21/2002	US20020171138 Multilayer wiring board and semiconductor device
11/21/2002	US20020171132 Reworkable and thermally conductive adhesive and use thereof
11/21/2002	US20020171125 Organic semiconductor devices with short channels
11/21/2002	US20020171123 System and method for fabricating silicon targets
11/21/2002	US20020171122 System and method for sputtering silicon films using hydrogen gas mixtures

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