Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/05/2002US6476431 Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same
11/05/2002US6476429 Semiconductor device with breakdown voltage improved by hetero region
11/05/2002US6476428 Field effect transistor, control method for controlling such a field effect transistor and a frequency mixer means including such a field effect transistor
11/05/2002US6476422 Electrostatic discharge protection circuit with silicon controlled rectifier characteristics
11/05/2002US6476419 Electroluminescence display device
11/05/2002US6476418 Thin film transistor for liquid crystal display
11/05/2002US6476417 Image-pickup semiconductor device having a lens, a light-receiving element and a flexible substrate therebetween with a shading plate blocking undesired light rays
11/05/2002US6476416 Thin-film semiconductor apparatus, display apparatus using such semiconductor apparatus, and method of manufacturing such display apparatus
11/05/2002US6476414 Semiconductor device
11/05/2002US6476412 Light emitting semiconductor device with partial reflection quantum-wave interference layers
11/05/2002US6476409 Nano-structures, process for preparing nano-structures and devices
11/05/2002US6475927 Method of forming a semiconductor device
11/05/2002US6475926 Substrate for high frequency integrated circuits
11/05/2002US6475899 Low capacitance wiring layout and method for making same
11/05/2002US6475897 Semiconductor device and method of forming semiconductor device
11/05/2002US6475893 Method for improved fabrication of salicide structures
11/05/2002US6475890 Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology
11/05/2002US6475888 Method for forming ultra-shallow junctions using laser annealing
11/05/2002US6475887 Method of manufacturing semiconductor device
11/05/2002US6475885 Source/drain formation with sub-amorphizing implantation
11/05/2002US6475884 Devices and methods for addressing optical edge effects in connection with etched trenches
11/05/2002US6475883 Method for forming a barrier layer
11/05/2002US6475876 Process for fabricating a semiconductor component
11/05/2002US6475874 Damascene NiSi metal gate high-k transistor
11/05/2002US6475872 Polysilicon thin film transistor and method of manufacturing the same
11/05/2002US6475870 P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture
11/05/2002US6475869 Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
11/05/2002US6475868 Oxygen implantation for reduction of junction capacitance in MOS transistors
11/05/2002US6475864 Method of manufacturing a super-junction semiconductor device with an conductivity type layer
11/05/2002US6475863 Method for fabricating self-aligned gate of flash memory cell
11/05/2002US6475862 Semiconductor device having gate insulating layers different in thickness and material and process for fabrication thereof
11/05/2002US6475861 Semiconductor device and fabrication method thereof
11/05/2002US6475856 Capacitors and capacitor forming methods
11/05/2002US6475853 Stacked semiconductor integrated circuit device and manufacturing method thereof
11/05/2002US6475852 Method of forming field effect transistors and related field effect transistor constructions
11/05/2002US6475849 Method for reducing base resistance in a bipolar transistor
11/05/2002US6475848 Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor
11/05/2002US6475844 Field effect transistor and method of manufacturing same
11/05/2002US6475843 Polysilicon thin film transistor with a self-aligned LDD structure
11/05/2002US6475842 Process for gate oxide side-wall protection from plasma damage to form highly reliable gate dielectrics
11/05/2002US6475841 Transistor with shaped gate electrode and method therefor
11/05/2002US6475840 Semiconductor device and method for manufacturing the same
11/05/2002US6475839 Manufacturing of TFT device by backside laser irradiation
11/05/2002US6475838 Methods for forming decoupling capacitors
11/05/2002US6475837 Electro-optical device
11/05/2002US6475835 Method for forming thin film transistor
11/05/2002US6475825 Process for preparing zinc oxide films containing p-type dopant
11/05/2002US6474169 Corrosion-resistant diaphragm pressure sensor
11/05/2002CA2251867C Transistor-based molecular detection apparatus and method
10/2002
10/31/2002WO2002086976A1 Semiconductor device
10/31/2002WO2002086973A2 Nanoelectronic devices and circuits
10/31/2002WO2002086970A2 Semiconductor device and method of manufacturing the same
10/31/2002WO2002086966A1 Two-transistor flash cell having vertical access transistor
10/31/2002WO2002086955A1 Semiconductor device and method of manufacturing same
10/31/2002WO2002086905A2 Ferroelectric memory and operating method therefor
10/31/2002WO2002069406A3 Am/pm non-linearity compensation in fets
10/31/2002WO2002029900A3 Silicon carbide power mosfets having a shorting channel and methods of fabrication them
10/31/2002US20020160623 Method to fabricate thin insulating film
10/31/2002US20020160613 Method of manufacturing semiconductor device
10/31/2002US20020160612 Manufacturing method of semiconductor device
10/31/2002US20020160611 Forming a membrane over the holes of a circuit to avoid the holes reducing the surface area available on the platform; ultrahigh density data storage applications; Micro-Electro-Mechanical Systems (MEMS)
10/31/2002US20020160597 Wafer level package and the process of the same
10/31/2002US20020160593 Method of enhanced oxidation of MOS transistor gate corners
10/31/2002US20020160592 Method for forming ultra-shallow junctions using laser annealing
10/31/2002US20020160588 Method of forming a junction in semiconductor device using halo implant processing
10/31/2002US20020160586 Method and system for evaluating polsilicon, and method and system for fabricating thin film transistor
10/31/2002US20020160584 Semiconductor wafer and method for fabicating the same
10/31/2002US20020160581 Semiconductor device
10/31/2002US20020160577 Capacitor for analog circuit, and manufacturing method thereof
10/31/2002US20020160575 High coupling ratio stacked-gate flash memory and the method of making the same
10/31/2002US20020160574 Method of forming a dual-gated semiconductor-on-insulator device
10/31/2002US20020160573 Trench-gate semiconductor devices and their manufacture
10/31/2002US20020160572 High voltage device and method for fabricating the same
10/31/2002US20020160571 High coupling ratio stacked-gate flash memory and the method of making the same
10/31/2002US20020160570 Stacked-gate flash memory and the method of making the same
10/31/2002US20020160568 Novel dram access transistor
10/31/2002US20020160562 Integrated process for high voltage and high performance silicon-on-insulator bipolar devices
10/31/2002US20020160557 Trench-gate semiconductor devices and their manufacture
10/31/2002US20020160556 Semiconductor device and method for forming the same
10/31/2002US20020160555 Method for manufacturing thin film transistor array panel for liquid crystal display
10/31/2002US20020160554 Method of manufacturing a semiconductor device
10/31/2002US20020160553 Method and apparatus for forming a thin semiconductor film, method and apparatus for producing a semiconductor device, and electro-opitcal apparatus
10/31/2002US20020160547 Transistor and associated driving device
10/31/2002US20020160208 SOI substrate, annealing method therefor, semiconductor device having the SOI substrate, and method of manufacturing the same
10/31/2002US20020159315 Semiconductor memory
10/31/2002US20020159298 Nonvolatile semiconductor memory device capable of preventing occurrence of latchup
10/31/2002US20020159297 Eeprom erasing method
10/31/2002US20020159295 Nonvolatile semiconductor memory device
10/31/2002US20020159293 Higher program vt and faster programming rates based on improved erase methods
10/31/2002US20020159292 Flash memory with nanocrystalline silicon film floating gate
10/31/2002US20020159291 Nonvolatile semiconductor memory, data deletion method of nonvolatile semiconductor memory, information processing apparatus and nonvolatile semiconductor memory system
10/31/2002US20020159016 In-plane switching mode active matrix type liquid crystal display device and method of fabricating the same
10/31/2002US20020159010 Liquid crystal display device and manufacturing method of same
10/31/2002US20020158995 Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof
10/31/2002US20020158994 Manufacturing method of liquid crystal display device
10/31/2002US20020158829 Display system
10/31/2002US20020158666 Semiconductor device
10/31/2002US20020158573 Electro-optical device and electronic apparatus
10/31/2002US20020158342 Nanofabrication
10/31/2002US20020158314 Buried mesa semiconductor device