H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/07/2002	WO2002047160A3 Method for producing high-speed vertical npn bipolar transistors and complementary mos transistors on a chip
11/07/2002	WO2002035600A3 Method for producing a dmos transistor
11/07/2002	WO2002031883A3 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode
11/07/2002	US20020164888 Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same
11/07/2002	US20020164884 Method for thin film lift-off processes using lateral extended etching masks and device
11/07/2002	US20020164866 Multilayer; semiconductor substrate, dielectric and barrier electrode
11/07/2002	US20020164864 Method of fabricating semiconductor device
11/07/2002	US20020164860 Multilayer; overcoating dielectric substrate; intake and drain zones
11/07/2002	US20020164857 Method for forming dual gate of a semiconductor device
11/07/2002	US20020164856 Method of making an eeprom cell with asymmetric thin window
11/07/2002	US20020164853 Vertical gate transistors in pass transistor programmable logic arrays
11/07/2002	US20020164850 Multilayer; substrate, ferroelectric dielectric barrier and interfacial oxide
11/07/2002	US20020164844 Stacked LDD high frequency LDMOSFET
11/07/2002	US20020164842 Method for manufacturing a semiconductor device
11/07/2002	US20020164841 Soi transistor with polysilicon seed
11/07/2002	US20020164537 Electronic device and defect repair method thereof
11/07/2002	US20020163838 Novel multi-state memory
11/07/2002	US20020163829 Memory switch
11/07/2002	US20020163603 Liquid crystal display device and method for fabricating the same
11/07/2002	US20020163375 On-chip integrated mixer with balun circuit and method of making the same
11/07/2002	US20020163366 Inductive load driving circuit
11/07/2002	US20020163300 Organic electroluminescent device and a method of manufacturing thereof
11/07/2002	US20020163083 Semiconductor device
11/07/2002	US20020163079 Integrated circuit device and method of producing the same
11/07/2002	US20020163060 Component of gallium arsenide and fabrication method
11/07/2002	US20020163059 Device with epitaxial base
11/07/2002	US20020163057 Reversible field-programmable electric interconnects
11/07/2002	US20020163052 Compact sensing apparatus having an angled sensor formed in a dual-piece monolithic substrate
11/07/2002	US20020163050 Electronic circuit structure with improved dielectric properties
11/07/2002	US20020163049 Semiconductor device and fabrication method thereof
11/07/2002	US20020163047 Semiconductor device
11/07/2002	US20020163046 Merged semiconductor device and method
11/07/2002	US20020163042 Semiconductor device
11/07/2002	US20020163039 High dielectric constant materials as gate dielectrics (insulators)
11/07/2002	US20020163037 Semiconductor device having LDD-type source/drain regions and fabrication method thereof
11/07/2002	US20020163036 Semiconductor Device
11/07/2002	US20020163035 Semiconductor device and manufacturing method thereof
11/07/2002	US20020163032 Nonvolatile memory and method of manufacturing the same
11/07/2002	US20020163031 Dual-bit flash memory built from a discontinuous floating gate
11/07/2002	US20020163030 Floating gate memory device using composite molecular material
11/07/2002	US20020163027 Method of fabricating a vertical quadruple conduction channel insulated gate transistor, and an integrated circuit including this kind of transistor
11/07/2002	US20020163021 Low voltage transient voltage suppressor and method of making
11/07/2002	US20020163016 Semiconductor device
11/07/2002	US20020163014 Bipolar transistor with graded base layer
11/07/2002	US20020163013 Heterojunction bipolar transistor
11/07/2002	US20020163012 Semiconductor triode device having a compound-semiconductor channel layer
11/07/2002	US20020163011 Transistors including gate dielectric layers having different nitrogen concentrations and related structures
11/07/2002	US20020163009 Method for forming a lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process
11/07/2002	US20020163008 Semiconductor device and method of forming a semiconductor device
11/07/2002	US20020163000 Semiconductor device and method of fabricating the same
11/07/2002	US20020162999 Polysilicon doped transistor
11/07/2002	DE10218990A1 Electronic storage element consists of a silicon substrate, neighboring channels, gate electrodes, primary and secondary insulation layers, and transition regions
11/07/2002	CA2445592A1 Eeprom cell with asymmetric thin window
11/06/2002	EP1255302A2 Method for fabricating forward and reverse blocking devices
11/06/2002	EP1255301A1 Layout configurable electrostatic discharge device for integrated circuits
11/06/2002	EP1255290A2 A method to form a low parasitic capacitance CMOS device
11/06/2002	EP1255288A2 Component on GaAs and method for making the same
11/06/2002	EP1255281A2 Semiconductor device and method for fabricating the same
11/06/2002	EP1254482A2 Bipolar transistor
11/06/2002	EP1254478A1 A chemical sensor using chemically induced electron-hole production at a schottky barrier
11/06/2002	EP1053574A4 Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
11/06/2002	EP0799412B1 AC excitation of polysilicon based pressure sensors
11/06/2002	CN1378705A Transistor with notches gate
11/06/2002	CN1378704A Method for manufacturing semiconductor memory device with reduced reflective coating
11/06/2002	CN1378703A High temperature oxide deposition method for EEPROM device
11/06/2002	CN1378694A Flash memory wordline tracking across whole chip
11/06/2002	CN1378340A 化合物半导体开关电路装置 Compound semiconductor switching circuit device
11/06/2002	CN1378290A Photoelectric substrate device and its producing method, photoelectric device and electronic device
11/06/2002	CN1378281A Silicon controlled rectifier and method for realising static discharging protection and locking resisting
11/06/2002	CN1378276A Wiring and wiring production method and wiring board and wiring board production method
11/06/2002	CN1378269A Double metal grid complementary metal oxide semiconductor device and its processing method
11/06/2002	CN1378263A Method for forming self aligning float grid multicrystal silicone layer relative to active area for fast electric eraseable, programable read-only memory unit
11/06/2002	CN1378093A Substrate device, electrooptic device and its producing method and electronic instrument
11/05/2002	US6477090 Semiconductor device, microcomputer and flash memory
11/05/2002	US6477088 Usage of word voltage assistance in twin MONOS cell during program and erase
11/05/2002	US6477084 NROM cell with improved programming, erasing and cycling
11/05/2002	US6476881 Liquid crystal display device and defect repairing method therefor
11/05/2002	US6476867 Photoelectric conversion apparatus, driving method and x-ray image pickup apparatus using the same
11/05/2002	US6476788 Image display device and method of making the same
11/05/2002	US6476502 Semiconductor device and manufacturing method thereof
11/05/2002	US6476495 Transistor which can minimize the DC resistance of the wiring and lead formed on a semiconductor chip
11/05/2002	US6476483 Method and apparatus for cooling a silicon on insulator device
11/05/2002	US6476462 MOS-type semiconductor device and method for making same
11/05/2002	US6476461 Arrangement of stacked, spherically-shaped semiconductors
11/05/2002	US6476459 Semiconductor integrated circuit device with capacitor formed under bonding pad
11/05/2002	US6476458 Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element
11/05/2002	US6476457 Semiconductor device with drift layer
11/05/2002	US6476456 Integrated radiation hardened power mosgated device and schottky diode
11/05/2002	US6476454 Semiconductor device and method of manufacturing the same
11/05/2002	US6476452 Bipolar/BiCMOS semiconductor device
11/05/2002	US6476450 BICMOS semiconductor integrated circuit device and fabrication process thereof
11/05/2002	US6476449 Silicide block for ESD protection devices
11/05/2002	US6476447 Active matrix display device including a transistor
11/05/2002	US6476445 Method and structures for dual depth oxygen layers in silicon-on-insulator processes
11/05/2002	US6476444 Semiconductor device and method for fabricating the same
11/05/2002	US6476443 MOSgated device with trench structure and remote contact and process for its manufacture
11/05/2002	US6476442 Pseudo-Schottky diode
11/05/2002	US6476441 Method and structure for textured surfaces in floating gate tunneling oxide devices
11/05/2002	US6476440 Nonvolatile memory device and method of manufacturing the same
11/05/2002	US6476438 Nonvolatile semiconductor memory device and method of manufacturing the same

1 ... 1674 1675 1676 1677 1678 1679 1680 1681 1682 1683 1684 1685 1686 1687 1688 1689 1690 1691 1692 1693 1694 ... 2182