H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/29/2002	US6472282 Self-amorphized regions for transistors
10/29/2002	US6472278 Method and apparatus for creating a voltage threshold in a FET
10/29/2002	US6472277 Method for fabricating a semiconductor device with an improved short channel effect
10/29/2002	US6472274 MOSFET with self-aligned channel edge implant and method
10/29/2002	US6472265 Method for manufacturing embedded dynamic random access memory
10/29/2002	US6472262 Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor
10/29/2002	US6472261 Method of forming an integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure
10/29/2002	US6472260 Methods of forming field effect transistors and related field effect transistor constructions
10/29/2002	US6472259 Method of manufacturing semiconductor device
10/29/2002	US6472258 Double gate trench transistor
10/29/2002	US6472256 Method of manufacturing a thin-film transistor with a short-circuiting pattern
10/29/2002	US6472255 Solid-state imaging device and method of its production
10/29/2002	US6472254 Integrated photovoltaic switch with integrated power device including etching backside of substrate
10/29/2002	US6472247 Solid-state imaging device and method of production of the same
10/29/2002	US6472243 Method of forming an integrated CMOS capacitive pressure sensor
10/28/2002	EP1131849A4 Pseudomorphic high electron mobility transistors
10/24/2002	WO2002084757A1 Heterostructure component
10/24/2002	WO2002084756A1 Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors
10/24/2002	WO2002084745A2 Power semiconductor devices and methods of forming same
10/24/2002	WO2002084744A1 Semiconductor device and its manufacturing method
10/24/2002	WO2002084743A1 Metal insulator power semiconductor component (mis) and a method for producing the same
10/24/2002	WO2002084739A1 Thin film-device manufacturing method, and semiconductor device
10/24/2002	WO2002084727A2 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
10/24/2002	WO2002035260A3 Light detection device
10/24/2002	WO2001071811A9 Multi-spectral quantum well infrared photodetectors
10/24/2002	WO2001070625A3 Micromechanical component and balancing method
10/24/2002	US20020157069 Method and apparatus for preparing a simulation model semiconductor integrated circuit at power terminal for simulating electromagnetic interference
10/24/2002	US20020156609 Circuit simulation method, circuit simulation device, and circuit simulation program and computer readable storage medium onto which the program is stored
10/24/2002	US20020156607 Method of and apparatus for automatically correcting device model, and computer product
10/24/2002	US20020155729 Semiconductor device encapsulation
10/24/2002	US20020155714 Antireflectivity coating; using oxygen, chlorine, hydrogen bromide gas mixtures
10/24/2002	US20020155706 Uniform grains of active semiconductor material; heating, crystallization; controlling crystal molecular orientation
10/24/2002	US20020155701 Fabrication method of implanting siliconions into the silicon substrate
10/24/2002	US20020155690 Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby
10/24/2002	US20020155689 Hafnium oxide dielectric barrier; thermal evaporation of hafnium, then oxidation; uniform thickness
10/24/2002	US20020155688 Highly reliable gate oxide and method of fabrication
10/24/2002	US20020155685 Forming channel in semiconductor; p-n junction; dielectric barrier
10/24/2002	US20020155684 Vapor deposition; amorphous and crystal structure zones
10/24/2002	US20020155673 Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition
10/24/2002	US20020155671 Direct current stack structures
10/24/2002	US20020155664 Floating barrier electrodes; isolation dielectrics; contact holes
10/24/2002	US20020155653 Semiconductor device and method of manufacturing the semiconductor device
10/24/2002	US20020155652 Method of manufacturing semiconductor device
10/24/2002	US20020155651 Method of manufacturing a semiconductor device with metallization layers interconnected by tungsten plugs
10/24/2002	US20020155646 Soi ldmos structure with improved switching characteristics
10/24/2002	US20020155643 Isolation structure; forming metal shield and protective coatings
10/24/2002	US20020155586 Apparatus for monitoring eukaryotic and prokaryotic cell activity
10/24/2002	US20020154556 Semiconductor memory and its production process
10/24/2002	US20020154533 Ferroelectric memory and operating method therefor
10/24/2002	US20020154529 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
10/24/2002	US20020154482 Press - contact type semiconductor device
10/24/2002	US20020154253 Active matrix device and display
10/24/2002	US20020154252 Image display and manufacturing method of the same
10/24/2002	US20020153616 High-frequency semiconductor device
10/24/2002	US20020153606 Integrated circuit packages assembled utilizing fluidic self-assembly
10/24/2002	US20020153595 Semiconductor substrate and thin-film semiconductive member, and method for making thereof
10/24/2002	US20020153594 Layered dielectric on silicon carbide semiconductor structures
10/24/2002	US20020153590 High-speed stacked capacitor in SOI structure
10/24/2002	US20020153587 Double planar gated SOI MOSFET structure
10/24/2002	US20020153586 Semiconductor device
10/24/2002	US20020153579 Semiconductor device with thin film having high permittivity and uniform thickness
10/24/2002	US20020153577 Non-volatile semiconductor memory device and its manufacturing method
10/24/2002	US20020153576 Semiconductor device
10/24/2002	US20020153575 Semiconductor devices and methods for manufacturing the same
10/24/2002	US20020153573 MIS field effect transistor and manufacturing method thereof
10/24/2002	US20020153572 Semiconductor device
10/24/2002	US20020153571 Electrostatic discharge protection structures having high holding current for latch-up immunity
10/24/2002	US20020153569 Electrooptical substrate device and manufacturing method for same, electrooptical apparatus, electronic apparatus and manufacturing method for a substrate device
10/24/2002	US20020153567 Thin-film transistor and method of manufacturing the same
10/24/2002	US20020153566 Thin film transistor having a short channel formed by using an exposure mask with slits
10/24/2002	US20020153564 Semiconductor device
10/24/2002	US20020153562 Method for fabricating semiconductor device
10/24/2002	US20020153561 High-voltage transistor with buried conduction layer
10/24/2002	US20020153560 High-voltage transistor with buried conduction layer
10/24/2002	US20020153558 Semiconductor device and method for manufacturing the same
10/24/2002	US20020153557 Method for creating thick oxide on the bottom surface of a trench structure in silicon
10/24/2002	US20020153556 Method of making a high-voltage transistor with buried conduction regions
10/24/2002	US20020153555 Nonvolatile semiconductor memory
10/24/2002	US20020153549 Tailored insulator properties for devices
10/24/2002	US20020153546 Two-transistor flash cell
10/24/2002	US20020153542 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
10/24/2002	US20020153541 Cluster globular semiconductor device
10/24/2002	US20020153537 Semiconductor device and method for fabricating the same
10/24/2002	US20020153536 Semiconductor device
10/24/2002	US20020153535 Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors
10/24/2002	US20020153534 Semiconductor device and power amplifier using the same
10/24/2002	US20020153531 Telecommunications switch array with thyristor addressing
10/24/2002	US20020153530 Thyristor switch for microwave signals
10/24/2002	US20020153527 Polysilicon thin film transistor structure
10/24/2002	US20020153165 Electric circuit board including glass substrate and method and apparatus trimming thereof
10/24/2002	US20020153160 Electronic device and method for fabricating an electronic device
10/24/2002	DE10217935A1 Semiconducting component has breakdown voltage between pot region, substrate lower than semiconducting element rated voltage, not higher than that of high voltage semiconducting element
10/24/2002	DE10216633A1 Semiconducting arrangement has source, base, drift, drain regions, gate isolation layer and gate electrode; channel region with lateral flow is formed when voltage applied to gate electrode
10/24/2002	DE10216019A1 Container used for a semiconductor sensor comprises a housing part provided with a housing hollow space for a sensor element, a lid for closing the hollow space, and connecting lines
10/24/2002	DE10214150A1 Siliziumcarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben Siliziumcarbidhalbleitervorrichtung and methods for making the same
10/24/2002	DE10155416A1 Halbleiter-Permanentspeicher Semiconductor non-volatile memory
10/24/2002	DE10118405A1 Heterostructure component used in electronic devices comprises a single hetero-nanotube having regions made from nanotube materials having different energy band gaps value
10/24/2002	DE10117802A1 Semiconductor power component e.g. emitter switched thyristor as ignition transistor of ignition coil of combustion engine, has drift zone joined to rear face emitter zone
10/24/2002	DE10117801A1 Semiconductor power component e.g. vertical insulated gate bipolar transistor, has n-type and p-type drift regions with specific degree of compensation, that are connected to rear side emitter region
10/23/2002	EP1251724A2 Electric circuit board including glass substrate and method and apparatus for trimming thereof

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