Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2002
11/19/2002US6482698 Method of manufacturing an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip
11/19/2002US6482697 Method of forming a highly integrated non-volatile semiconductor memory device
11/19/2002US6482691 Seismic imaging using omni-azimuth seismic energy sources and directional sensing
11/19/2002US6482686 Method for manufacturing a semiconductor device
11/19/2002US6482685 Method for fabricating a low temperature polysilicon thin film transistor incorporating multi-layer channel passivation step
11/19/2002US6482684 Method of manufacturing a TFT with Ge seeded amorphous Si layer
11/19/2002US6482682 Manufacturing method for improving reliability of polysilicon thin film transistors
11/19/2002US6482681 Hydrogen implant for buffer zone of punch-through non epi IGBT
11/19/2002US6482671 Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
11/19/2002US6482667 Solid state image sensor device and method of fabricating the same
11/19/2002US6482666 Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device
11/19/2002US6482641 DNA-based integrated circuit
11/19/2002CA2238857C Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same
11/17/2002CA2380209A1 Organic semiconductor devices with short channels
11/14/2002WO2002091496A2 Reversible field-programmable electric interconnects
11/14/2002WO2002091494A1 Switch element having memeory effect
11/14/2002WO2002091490A1 Active devices using threads
11/14/2002WO2002091483A2 Improved photovoltaic device
11/14/2002WO2002091479A1 Gas specie electron-jump chemical energy converter
11/14/2002WO2002091476A1 Floating gate memory device using composite molecular material
11/14/2002WO2002091475A1 An electronic device including a thin film transistor
11/14/2002WO2002091474A1 Semiconductor device and its manufacturing method
11/14/2002WO2002091473A1 Ferroelectric composite material, method of making same and memory utilizing same
11/14/2002WO2002091472A2 Transistor and integrated circuit
11/14/2002WO2002091468A1 Method for thin film lift-off processes using lateral extended etching masks and device
11/14/2002WO2002091463A1 Semiconductor process and integrated circuit
11/14/2002WO2002091455A1 Thin film transistor self-aligned to a light-shield layer
11/14/2002WO2002091454A1 Method of manufacturing a thin film transistor
11/14/2002WO2002075344A3 Semiconductor element comprising a semimagnetic contact
11/14/2002WO2002073699A3 Nanofabrication
11/14/2002WO2002069373A9 Gallium nitride material based semiconductor devices including thermally conductive regions
11/14/2002WO2002069284A8 Time-detection device and time- detection method by using a semi-conductor element
11/14/2002WO2002059968A3 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method
11/14/2002WO2002054505A3 System and method for electrically induced breakdown of nanostructures
11/14/2002WO2002010702A3 Micro-machined absolute pressure sensor
11/14/2002US20020168878 Ammonia-free silicon nitride is formed by using a gas mixture of one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen using chemical vapor deposition
11/14/2002US20020168868 First and second surfaces with different morphology, adding trisilane to the chamber under chemical vapor depostion, and depositing a silane containing film
11/14/2002US20020168853 Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same
11/14/2002US20020168851 Blocking layer is formed on semiconductor substrate by plasma enhanced chemical vapor deposition, blocking layer in region in which metal silicide contact is to be formed is removed by wet etching. metal is reacted with silicon to form silicide
11/14/2002US20020168843 Method of forming high density eeprom cell.
11/14/2002US20020168841 Method of creating hydrogen isotope reservoirs in a semiconductor device
11/14/2002US20020168835 Structure of wirelike quantum dots with good quality is formed in materials having an inconsistency in the lattice constants
11/14/2002US20020168829 Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor
11/14/2002US20020168828 Gate oxide is formed on silicon substrate of semiconductor wafer, fluorine ions are doped into gate oxide or silicon substrate, conductive layer is formed on gate oxide, etching process is performed, nitride is formed
11/14/2002US20020168826 Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors
11/14/2002US20020168824 Flash memory cell fabrication sequence
11/14/2002US20020168823 Method for fabricating recessed lightly doped drain field effect transistors
11/14/2002US20020168821 Fabrication process for a super-self-aligned trench-gated DMOS with reduced on-resistance
11/14/2002US20020168819 Flash memory with conformal floating gate and the method of making the same
11/14/2002US20020168818 Method to manufacture a split gate P+ EEPROM memory cell
11/14/2002US20020168813 Stitch and select implementation in twin MONOS array
11/14/2002US20020168809 Semiconductor circuits and devices on germanium substrates
11/14/2002US20020168808 Self-aligned LDD poly-Si thin-film transistor
11/14/2002US20020168805 Transistor formed on the color filters, and a smoothing layer having a recess in which a gate electrode is to be formed, the smoothing layer compensating for a step coverage between the color filters
11/14/2002US20020168804 Electronic devices comprising thin film transistors
11/14/2002US20020168803 Method for re-forming semiconductor layer in TFT-LCD
11/14/2002US20020168802 SiGe/SOI CMOS and method of making the same
11/14/2002US20020168793 Adhesive filler; bonding multilayer sheets
11/14/2002US20020168791 Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy
11/14/2002US20020168790 Glass transparent substrate; patterned overcoatings; pixel electrode; passivation layer
11/14/2002US20020168789 Method to fabricate flat panel display
11/14/2002US20020168788 Glass transparent substrate; patterned overcoatings; pixel electrode; passivation layer
11/14/2002US20020168785 Ferroelectric composite material, method of making same, and memory utilizing same
11/14/2002US20020168591 Rapid thermal oxidation; etching
11/14/2002US20020168577 Method of crystallizing amorphous silicon
11/14/2002US20020167636 Active-matrix addressing liquid-crystal display device and method of fabricating same
11/14/2002US20020167472 Active matrix display device and inspection method therefor
11/14/2002US20020167312 Compact sensing apparatus having an orthogonal sensor and methods for forming same
11/14/2002US20020167088 Semiconductor device and a method of manufacturing the same
11/14/2002US20020167083 RF circuit chip, RF circuit device having the same, and manufacturing method therefor
11/14/2002US20020167082 Compensation component, circuit configuration, and method
11/14/2002US20020167078 Electronic component with a semiconductor chip and method of producing an electronic component
11/14/2002US20020167058 Semiconductor pressure sensor decreasing creep stress in <110> crystalline axis direction
11/14/2002US20020167057 Integrated decoupling capacitors
11/14/2002US20020167056 Insulated gate semiconductor device with control circuit
11/14/2002US20020167052 Low-noise silicon controlled rectifier for electrostatic discharge protection
11/14/2002US20020167051 Electronic device including a thin film transistor
11/14/2002US20020167050 Method and structures for dual depth oxygen layers in silicon-on-insulator processes
11/14/2002US20020167049 Field-effect transistor and manufacture thereof
11/14/2002US20020167048 Enhanced mobility NMOS and PMOS transistors using strained Si/SiGe layers on silicon-on-insulator substrates
11/14/2002US20020167047 Semiconductor device
11/14/2002US20020167046 Semiconductor device and method for manufacturing the same
11/14/2002US20020167045 Increase in deep trench capacitance by a central ground electrode
11/14/2002US20020167044 Semiconductor component with an edge termination that is suitable for high voltage
11/14/2002US20020167043 Semiconductor memory device and method for manufacturing the same
11/14/2002US20020167041 Method of forming flash memories with high coupling ratio and the structure of the same
11/14/2002US20020167037 Capacitor of an integrated circuit device and method of manufacturing the same
11/14/2002US20020167034 Semiconductor device evaluation method and apparatus, semiconductor device manufacturing control method, semiconductor device manufacturing method, and recording medium
11/14/2002US20020167025 Semiconductor device and manufacturing method thereof
11/14/2002US20020167023 Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
11/14/2002US20020167020 Semiconductor device
11/14/2002US20020167011 Silicon carbide semiconductor device and manufacturing method
11/14/2002US20020167010 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
11/14/2002US20020167009 Thin film transistor for liquid crystal display and method of manufacturing the same
11/14/2002US20020167007 Semiconductor device and method of fabricating the same
11/14/2002US20020167002 Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
11/14/2002US20020166507 Thin film forming apparatus
11/14/2002DE10220810A1 Semiconductor component has source and drain electrodes extending over trench formed in substrate
11/14/2002DE10220359A1 Siliziumkarbidhalbleitervorrichtung und Herstellungsverfahren Silicon carbide semiconductor device and manufacturing method
11/14/2002DE10122324A1 Flexible integrierte monolithische Schaltung Flexible integrated monolithic circuit
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