H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2002
12/05/2002	US20020179708 Automated method of and system for dimensioning objects over a conveyor belt structure by applying contouring tracing, vertice detection, corner point detection, and corner point reduction methods to two-dimensional range data maps of the space above the conveyor belt captured by an amplitude modulated laser scanning beam
12/05/2002	US20020179195 Reacting silicide; forming oxide
12/05/2002	US20020179004 Silicon crystallization method
12/05/2002	US20020178829 Pressure sensor and pressure sensor housing having a protective portion
12/05/2002	US20020178828 Capacitive physical load sensor and detection system
12/05/2002	US20020178818 Acceleration sensor and manufacturing method thereof
12/05/2002	US20020178814 Angular velocity sensor
12/05/2002	DE10223822A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
12/05/2002	DE10223818A1 Lateraler Graben-MOSFET Lateral trench MOSFET
12/05/2002	DE10220542A1 Kompakte Grabenkondensatorspeicherzelle mit Körperkontakt Compact grave capacitor memory cell having physical contact
12/05/2002	DE10160183A1 Drucksensor Pressure sensor
12/05/2002	DE10156442A1 Halbleitervorrichtung Semiconductor device
12/05/2002	DE10127234A1 Transistor, used as a MOS transistor, has a contact region containing praseodymium silicide between a semiconductor region and a metallic conducting region
12/05/2002	DE10126579A1 Production of a gate stack having a gate oxide layer and a polysilicon layer covering a substrate section used in ultra-high integrated semiconductor storage devices involves applying a thick nitride layer on the polysilicon layer
12/05/2002	DE10126309A1 Power semiconductor component for reverse blocking has a semiconductor body forming a drift track for a mode of conductivity, a body zone for another mode of conductivity and a source zone for one mode of conductivity.
12/05/2002	DE10126308A1 Power semiconductor component for reverse blocking has a drift track in an area between two electrodes for a first mode of conductivity as well as source and drain areas.
12/05/2002	DE10123627A1 Sensorvorrichtung zum Erfassen einer mechanischen Deformation Sensor means for detecting mechanical deformation
12/05/2002	CA2446818A1 Semi-insulating silicon carbide without vanadium domination
12/04/2002	EP1263062A2 Organic semiconductor device and process of manufacturing the same
12/04/2002	EP1263053A1 Nonvolatile semiconductor storage device and production method therefor
12/04/2002	EP1263052A2 Bipolar transistor and method of manufacture thereof
12/04/2002	EP1263034A2 Method of channel implant for improving nmos esd robustness
12/04/2002	EP1263029A2 GaN semiconductor device
12/04/2002	EP1262997A1 Method of erasing a FAMOS memory cell and corresponding memory cell
12/04/2002	EP1262996A1 Semiconductor integrated circuit device
12/04/2002	EP1262911A1 Quantum computer
12/04/2002	EP1262578A1 Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit
12/04/2002	EP1262489A1 Complex comprising recombinant ferritin and a precious metal and DNA encoding said ferritin
12/04/2002	EP1262002A1 Quantum well intermixing
12/04/2002	EP1261989A1 Metal-insulator-metal capacitor and a method for producing same
12/04/2002	EP1261988A1 Group iii nitride based fets and hemts with reduced trapping and method for producing the same
12/04/2002	EP1261987A2 Single tunnel gate oxidation process for fabricating nand flash memory
12/04/2002	EP1261986A1 Quantum well intermixing
12/04/2002	EP0463165B1 Method for producing a semiconductor device comprising a conductive layer
12/04/2002	CN1383580A Electronic device manufacture
12/04/2002	CN1383214A Polysilicon film transistor of liquid crystal display device and its mfg. method
12/04/2002	CN1383213A Single-electron transistor with nano metal oxide wire
12/04/2002	CN1383211A Semiconductor integrated circuit device contg. nonvolatile semiconductor storage
12/04/2002	CN1383195A Transistor with anti-breakover regino generated by ion implantation and its preparing process
12/04/2002	CN1383166A Granular queueing body, its mfg. method and device using such queuecing body
12/04/2002	CN1383116A Active matrix type display and its checking method
12/04/2002	CN1383027A Image display and mfg. method thereof
12/04/2002	CN1383024A Electrooptical device and electronic instrument
12/04/2002	CA2349433A1 Long distance quantum transfer
12/03/2002	US6490709 Latch-up verifying method and latch-up verifying apparatus capable of varying over-sized region
12/03/2002	US6490197 Sector protection circuit and method for flash memory devices
12/03/2002	US6490196 Method for operating a nonvolatile memory having embedded word lines
12/03/2002	US6490021 Reflective type semiconductor display device
12/03/2002	US6490014 Active matrix liquid crystal display device having light-interruptive film over insulating film and opening of the upper insulating film
12/03/2002	US6489680 Semiconductor device
12/03/2002	US6489666 Semiconductor device with improved heat suppression in peripheral regions
12/03/2002	US6489665 Lateral bipolar transistor
12/03/2002	US6489662 Semiconductor integrated circuit device formed on SOI substrate
12/03/2002	US6489661 Method of manufacturing semiconductor device and semiconductor device
12/03/2002	US6489660 Low-voltage punch-through bi-directional transient-voltage suppression devices
12/03/2002	US6489659 Non-hermetic APD
12/03/2002	US6489657 Semiconductor device with improved channel stopper
12/03/2002	US6489655 Integrated circuit with dynamic threshold voltage
12/03/2002	US6489653 Lateral high-breakdown-voltage transistor
12/03/2002	US6489652 Trench DMOS device having a high breakdown resistance
12/03/2002	US6489651 MOS transistor that inhibits punchthrough
12/03/2002	US6489650 Semiconductor device and a method of manufacturing the same
12/03/2002	US6489649 Semiconductor device having nonvolatile memory and method of manufacturing thereof
12/03/2002	US6489648 Semiconductor device
12/03/2002	US6489646 DRAM cells with buried trench capacitors
12/03/2002	US6489639 High electron mobility transistor
12/03/2002	US6489632 Semiconductor device having a gate oxide film
12/03/2002	US6489631 Light-emitting matrix array display devices with light sensing elements
12/03/2002	US6489628 High electron mobility transistor and power amplifier
12/03/2002	US6489587 Fabrication method of erbium-doped silicon nano-size dots
12/03/2002	US6489236 Method for manufacturing a semiconductor device having a silicide layer
12/03/2002	US6489223 Angled implant process
12/03/2002	US6489222 Method of manufacturing a semiconductor device
12/03/2002	US6489221 High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
12/03/2002	US6489215 Method of making insulator for electrical structures
12/03/2002	US6489213 Method for manufacturing semiconductor device containing a silicon-rich layer
12/03/2002	US6489212 Semiconductor device and method for fabricating the same
12/03/2002	US6489211 Method of manufacturing a semiconductor component
12/03/2002	US6489208 Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon
12/03/2002	US6489207 Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor
12/03/2002	US6489204 Save MOS device
12/03/2002	US6489203 Stacked LDD high frequency LDMOSFET
12/03/2002	US6489190 Method of fabricating a high-voltage transistor
12/03/2002	US6489187 Method for setting the breakover voltage of a thyristor
12/03/2002	US6489176 Method of manufacturing array substrate for display device and method of manufacturing display device
12/03/2002	US6489041 Magnetic body formed by quantum dot array using non-magnetic semiconductor
11/2002
11/28/2002	WO2002095920A1 Electron tunneling device
11/28/2002	WO2002095840A1 Nucleic acid circuit elements and methods
11/28/2002	WO2002095836A1 Dmos with zener diode for esd protection
11/28/2002	WO2002095835A2 Vertical metal oxide semiconductor field-effect diodes
11/28/2002	WO2002095834A1 Thin film transistor and active matrix type display unit production methods therefor
11/28/2002	WO2002095833A1 High voltage n-channel ldmos devices built in a deep submicron cmos process
11/28/2002	WO2002095832A2 Applications for and tunneling device
11/28/2002	WO2002095831A1 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same
11/28/2002	WO2002095829A2 Non-volatile memory cells utilizing substrate trenches
11/28/2002	WO2002095819A2 Structure and method to preserve sti during etching
11/28/2002	WO2002095814A1 Semiconductor device and method therefor________________________
11/28/2002	WO2002095812A1 Two-mask trench schottky diode
11/28/2002	WO2002095805A2 Laser parrering of devices
11/28/2002	WO2002095762A2 Flash memory device with increase of efficiency during an apde (automatic program disturb after erase) process

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