Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2002
12/05/2002US20020182893 Oxidation of silicon nitride films in semiconductor devices
12/05/2002US20020182888 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
12/05/2002US20020182872 Material removal method for forming a structure
12/05/2002US20020182854 Method of manufacturing a semiconductor device with a contact hole
12/05/2002US20020182847 Method of manufacturing semiconductor device
12/05/2002US20020182845 Method of filling a concave portion with an insulating material
12/05/2002US20020182834 Method of manufacturing a transistor with a footed offset spacer
12/05/2002US20020182833 Method of manufacturing an array substrate having drive integrated circuits
12/05/2002US20020182831 Semiconductor device and method of manufacturing the same
12/05/2002US20020182829 Method for forming nitride read only memory with indium pocket region
12/05/2002US20020182828 Semiconductor film, semiconductor device and method of their production
12/05/2002US20020182822 Structure and method for MOSFET with metallic gate electrode
12/05/2002US20020182821 Method of manufacturing an alignment mark
12/05/2002US20020182818 Thin film devices and method for fabricating thin film devices
12/05/2002US20020182816 Material removal method for forming a structure
12/05/2002US20020182815 Novel self aligned channel implant, elevated S/D process by gate electrode damascene
12/05/2002US20020182814 Novel self aligned channel implant, elevated S/D process by gate electrode damascene
12/05/2002US20020182813 Graded LDD implant process for sub-half-micron MOS devices
12/05/2002US20020182812 Transistor structures, methods of incorporating nitrogen into silicon-oxide-containing layers; and methods of forming transistors
12/05/2002US20020182810 High power semiconductor device and fabrication method thereof
12/05/2002US20020182807 Semiconductor device and method of manufacturing same
12/05/2002US20020182805 Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof
12/05/2002US20020182801 Semiconductor device and method for manufacturing the same
12/05/2002US20020182799 Method for manufacturing transistor
12/05/2002US20020182795 Semiconductor transistor using L-shaped spacer and method of fabricating the same
12/05/2002US20020182791 GaN-based semiconductor device
12/05/2002US20020182789 Thin film transistor and a method of forming the same
12/05/2002US20020182787 Semiconductor device having quasi-SOI structure and manufacturing method thereof
12/05/2002US20020182785 Method of manufacturing a semiconductor device
12/05/2002US20020182784 Method of manufacturing a semiconductor device
12/05/2002US20020182783 Semiconductor film, semiconductor device and method for manufacturing same
12/05/2002US20020182766 Method for manufacturing liquid crystal display device
12/05/2002US20020182341 Amorphous silicon deposition for sequential lateral solidification
12/05/2002US20020181287 Channel write/erase flash memory cell and its manufacturing method
12/05/2002US20020181286 Dual cell reading and writing technique
12/05/2002US20020181283 One-sided floating-gate memory cell
12/05/2002US20020181267 Nonvolatile semiconductor memory device
12/05/2002US20020181266 Steering gate and bit line segmentation in non-volatile memories
12/05/2002US20020181208 Multi-feature-size electronic structures
12/05/2002US20020180926 Flat panel display unit and method of repairing defects in its line pattern
12/05/2002US20020180903 Thin film transistor for a liquid crystal display device and a fabrication process thereof
12/05/2002US20020180902 Active matrix substrate, display device, and detector
12/05/2002US20020180900 Forming method of liquid crystal layer using ink jet system
12/05/2002US20020180672 Semiconductor display device
12/05/2002US20020180045 Deposition method for lead germanate ferroelectric structure with multi-layered electrode
12/05/2002US20020180031 Semiconductor device
12/05/2002US20020180028 Silicon source reagent compositions, and method of making and using same for microelectronic device structure
12/05/2002US20020180025 Semiconductor device and method of stacking semiconductor chips
12/05/2002US20020180019 Container for semiconductor sensor, manufacturing method therefor, and semiconductor sensor device
12/05/2002US20020180005 Semiconductor device and manufacturing method thereof
12/05/2002US20020180003 Semiconductor device and method of manufacturing the same
12/05/2002US20020180002 Semiconductor device
12/05/2002US20020179996 Semiconductor device having a nitride barrier for preventing formation of structural defects
12/05/2002US20020179995 Semiconductor component on an insulation layer
12/05/2002US20020179993 Trench schottky rectifier
12/05/2002US20020179990 Use of DAR coating to modulate the efficiency of laser fuse blows
12/05/2002US20020179985 Flexible silicon strain gage
12/05/2002US20020179982 MOS field effect transistor structure and method of manufacture
12/05/2002US20020179981 Semiconductor switching device
12/05/2002US20020179980 Semiconductor device and method for manufacturing the same
12/05/2002US20020179978 Semiconductor device
12/05/2002US20020179976 Semiconductor device and method of manufacturing the same
12/05/2002US20020179975 Semiconductor device and method of manufacturing the same
12/05/2002US20020179974 High-voltage semiconductor device
12/05/2002US20020179973 Electronic device and method for manufacturing the same
12/05/2002US20020179972 Electronic device and method for manufacturing the same
12/05/2002US20020179971 Semiconductor integrated device having an electrostatic breakdown protection circuit
12/05/2002US20020179970 Semiconductor device and method of manufacturing the same
12/05/2002US20020179969 Electronic circuit
12/05/2002US20020179968 Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
12/05/2002US20020179967 Semiconductor device
12/05/2002US20020179964 Non-volatile memory and method of manufacturing the same
12/05/2002US20020179963 Semiconductor integrated circuit device having single-element type non-volatile memory elements
12/05/2002US20020179962 Semiconductor device having floating gate and method of producing the same
12/05/2002US20020179961 Nonvolatile semiconductor memory device and manufacturing method of nonvolatile semiconductor memory device
12/05/2002US20020179960 Semiconductor memory device having a floating gate and method of manufacturing the same
12/05/2002US20020179959 Semiconductor memory device and method of manufacturing the same
12/05/2002US20020179958 SONOS flash cells for embedded memory logic, free of drain turn-on and over-erase
12/05/2002US20020179957 Structure and method for fabricating high Q varactor diodes
12/05/2002US20020179950 Manufacture of trench-gate semiconductor devices
12/05/2002US20020179946 P-channel field-effect transistor
12/05/2002US20020179945 Power semiconductor device
12/05/2002US20020179944 Semiconductor device including MISFET having post-oxide films having at least two kinds of thickness and method of manufacturing the same
12/05/2002US20020179942 Semiconductor component
12/05/2002US20020179939 Four-terminal system for reading the state of a phase qubit
12/05/2002US20020179937 Four-terminal system for reading the state of a phase qubit
12/05/2002US20020179934 MOS field effect transistor structure and method of manufacture
12/05/2002US20020179933 Vertical heterojunction bipolar transistor
12/05/2002US20020179932 Semiconductor element
12/05/2002US20020179928 Semiconductor device and a method for manufacturing same
12/05/2002US20020179927 Thin film transistor and method for manufacturing the same
12/05/2002US20020179925 Controllable semiconductor switching element that blocks in both directions
12/05/2002US20020179924 Arrangement with p-doped and n- doped semiconductor layers and method for producing the same
12/05/2002US20020179913 Semiconductor apparatus and process for producing the same, and process for making via hole
12/05/2002US20020179909 Semiconductor device and method for manufacturing the same
12/05/2002US20020179908 Semiconductor device and method of manufacturing the same
12/05/2002US20020179906 Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device
12/05/2002US20020179905 Semiconductor device with junction isolation
12/05/2002US20020179901 Organic semiconductor device and process of manufacturing the same
12/05/2002US20020179897 Solid-state quantum dot devices and quantum computing using nanostructured logic gates
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