H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2002
12/19/2002	DE10127950A1 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
12/19/2002	DE10127885A1 Trench-Leistungshalbleiterbauelement Trench-power semiconductor component
12/19/2002	DE10126147A1 Halbleiterbauelement auf einer Isolationsschicht A semiconductor device on an insulating layer
12/18/2002	EP1267417A2 Semiconductor devices having group III-V compound layers
12/18/2002	EP1267416A1 Nonvolatile storage device and method for manufacturing nonvolatile storage device
12/18/2002	EP1267415A2 Power semiconductor device having resurf layer
12/18/2002	EP1267414A2 Thyristor and method of fabricating the same
12/18/2002	EP1267413A2 Lateral power MOSFET
12/18/2002	EP1267410A2 Non-volatile semiconductor memory having programming region for injecting and ejecting carrier into and from floating gate
12/18/2002	EP1267409A2 Capacitor
12/18/2002	EP1267407A2 Semiconductor device
12/18/2002	EP1267393A2 Group III nitride semiconductor substrate for epitaxial lateral overgrowth (ELO)
12/18/2002	EP1266409A1 Metal source and drain mos transistor, and method for making same
12/18/2002	EP1266408A1 Bar-type field effect transistor and method for the production thereof
12/18/2002	EP1266407A2 Trench gate dmos field-effect transistor and method of making the same
12/18/2002	EP1266406A2 Trench gate dmos field-effect transistor
12/18/2002	EP1266401A1 Method for producing electric connections between individual circuit elements
12/18/2002	EP1266400A2 Method for forming high quality multiple thickness oxide layers by using high temperature descum
12/18/2002	EP1266398A1 Method for producing a high-frequency semiconductor structure and a high-frequency semiconductor structure
12/18/2002	EP1266054A2 Graded thin films
12/18/2002	EP0558554B1 Silicon-on-porous-silicon; method of production and material
12/18/2002	CN1386301A Thin film transistors and their manufacture
12/18/2002	CN1386261A 有源矩阵显示装置 Active matrix display device
12/18/2002	CN1386124A Method of preparing a polymer, method of preparing a compound, compounds, polymers, and method for manufacturing and electronic device
12/18/2002	CN1385907A Current guiding circuit for reducing plasma damage and semiconductor making method
12/18/2002	CN1385905A Magnetic RAM of transistor with vertical structure and making method thereof
12/18/2002	CN1385904A Monoelectron memory device composed of quantum points and making method thereof
12/18/2002	CN1385899A 半导体器件 Semiconductor devices
12/18/2002	CN1385896A Semiconductor memory with same property storage unit and making method thereof
12/18/2002	CN1385745A Electrode substrater for LCD, its making method and LCD
12/18/2002	CN1385743A Film transistor for LCD and making method
12/18/2002	CN1096709C Method of manufacturing semiconductor devices
12/18/2002	CN1096705C Mfg. method for semiconductor device
12/18/2002	CN1096701C Method for manufacturing capacitor
12/18/2002	CN1096682C Highly integrated storage unit and making method
12/17/2002	US6496413 Semiconductor memory device for effecting erasing operation in block unit
12/17/2002	US6496412 Nonvolatile semiconductor memory device for storing multivalued data
12/17/2002	US6496223 Solid-state image sensor
12/17/2002	US6496171 Semiconductor display device
12/17/2002	US6495907 Conductor reticulation for improved device planarity
12/17/2002	US6495904 Compact bipolar transistor structure
12/17/2002	US6495900 Insulator for electrical structure
12/17/2002	US6495898 Semiconductor device and method of manufacturing the same
12/17/2002	US6495891 Transistor having impurity concentration distribution capable of improving short channel effect
12/17/2002	US6495890 Field-effect transistor with multidielectric constant gate insulation layer
12/17/2002	US6495889 Semiconductor device having self-aligned contacts
12/17/2002	US6495888 Semiconductor device with p-n junction diode and method of forming the same
12/17/2002	US6495887 Argon implantation after silicidation for improved floating-body effects
12/17/2002	US6495886 Semiconductor thin film and semiconductor device
12/17/2002	US6495885 Graded LDD implant process for sub-half-micron MOS devices
12/17/2002	US6495884 Vertical MOS transistor
12/17/2002	US6495883 Trench gate type semiconductor device and method of manufacturing
12/17/2002	US6495882 Short-channel schottky-barrier MOSFET device
12/17/2002	US6495879 Ferroelectric memory device having a protective layer
12/17/2002	US6495871 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
12/17/2002	US6495869 Method of manufacturing a double-heterojunction bipolar transistor on III-V material
12/17/2002	US6495868 Relaxed InxGa1−xAs buffers
12/17/2002	US6495866 Semiconductor device for preventing an increased clamp voltage in an ignition circuit
12/17/2002	US6495864 High-voltage semiconductor component, method for the production and use thereof
12/17/2002	US6495863 Semiconductor device having diode for input protection circuit of MOS structure device
12/17/2002	US6495858 Active matrix display device having thin film transistors
12/17/2002	US6495857 Thin film transister semiconductor devices
12/17/2002	US6495853 Self-aligned gate semiconductor
12/17/2002	US6495852 Gallium nitride group compound semiconductor photodetector
12/17/2002	US6495475 Method for fabrication of a high capacitance interpoly dielectric
12/17/2002	US6495474 Method of fabricating a dielectric layer
12/17/2002	US6495467 Method of fabricating a non-volatile memory device
12/17/2002	US6495461 Process for forming amorphous titanium silicon nitride on substrate
12/17/2002	US6495460 Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface
12/17/2002	US6495440 Method to prevent an ITO from opening
12/17/2002	US6495438 Titanium polycide gate electrode and method of forming a titanium polycide gate electrode of a semiconductor device
12/17/2002	US6495437 Low temperature process to locally form high-k gate dielectrics
12/17/2002	US6495436 Formation of metal oxide gate dielectric
12/17/2002	US6495422 Methods of forming high-k gate dielectrics and I/O gate oxides for advanced logic application
12/17/2002	US6495421 Manufacture of semiconductor material and devices using that material
12/17/2002	US6495420 Method of making a single transistor non-volatile memory device
12/17/2002	US6495416 Semiconductor integrated circuit device with MOS transistor and MOS capacitor and method for manufacturing the same
12/17/2002	US6495409 MOS transistor having aluminum nitride gate structure and method of manufacturing same
12/17/2002	US6495407 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
12/17/2002	US6495406 Method of forming lightly doped drain MOS transistor including forming spacers on gate electrode pattern before exposing gate insulator
12/17/2002	US6495405 Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films
12/17/2002	US6495403 Gate-all-around semiconductor device and process for fabricating the same
12/17/2002	US6495402 Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture
12/17/2002	US6495401 Method of forming an ultra-thin SOI MOS transistor
12/17/2002	US6495396 Method of coupling and aligning semiconductor devices including multi-chip semiconductor devices
12/17/2002	US6495389 Method for manufacturing semiconductor pressure sensor having reference pressure chamber
12/17/2002	US6495388 Surface micro-machined sensor with pedestal
12/17/2002	US6495386 Method of manufacturing an active matrix device
12/17/2002	US6495383 Manufacturing method of a thin film transistor
12/17/2002	US6495377 Method of fabricating ferroelectric memory transistors
12/17/2002	US6495294 Method for manufacturing semiconductor substrate having an epitaxial film in the trench
12/17/2002	US6494096 Semiconductor physical quantity sensor
12/12/2002	WO2002099909A1 Power mosfet having enhanced breakdown voltage
12/12/2002	WO2002099894A1 Gate feed structure for reduced size field effect transistors
12/12/2002	WO2002099893A1 Nonvolatile semiconductor memory
12/12/2002	WO2002099892A1 Functional device and production method therefor
12/12/2002	WO2002099891A1 Soi device with reduced junction capacitance
12/12/2002	WO2002099890A1 Semiconductor layer and forming method therefor, and semiconductor device and production method therefor
12/12/2002	WO2002099889A1 Trench schottky rectifier
12/12/2002	WO2002099886A1 Semiconductor device

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