H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2002
12/26/2002	US20020195655 Symmetric trench MOSFET device and method of making same
12/26/2002	US20020195654 DMOS transistor and fabricating method thereof
12/26/2002	US20020195653 Semiconductor structures with trench contacts
12/26/2002	US20020195652 Semiconductor device and method of manufacturing the same
12/26/2002	US20020195651 Metal oxide semiconductor transistor and manufacturing method for the same
12/26/2002	US20020195650 Semiconductor memory device and method of manufacturing the same
12/26/2002	US20020195648 Semiconductor device having an ESD protective circuit
12/26/2002	US20020195647 Nonvolatile semiconductor memory and manufacturing method thereof
12/26/2002	US20020195645 Semiconductor device and method of manufacturing the same
12/26/2002	US20020195644 Organic polarizable gate transistor apparatus and method
12/26/2002	US20020195643 Semiconductor device and method for producing the same
12/26/2002	US20020195640 Semiconductor device
12/26/2002	US20020195637 Semiconductor device having trench capacitor formed in SOI substrate, and method of manufacturing the same
12/26/2002	US20020195636 Semiconductor memory with trench capacitor and method of manufacturing the same
12/26/2002	US20020195634 Semiconductor integrated circuit
12/26/2002	US20020195631 Semiconductor device and manufacturing method thereof
12/26/2002	US20020195627 Lateral superjunction semiconductor device
12/26/2002	US20020195626 Double LDD devices for improved DRAM refresh
12/26/2002	US20020195623 Semiconductor integrated circuit and method for manufacturing the same
12/26/2002	US20020195620 Compound semiconductor device having heterojunction bipolar transister and other component integrated together and process for fabrication thereof
12/26/2002	US20020195619 Nitride semiconductor stack and its semiconductor device
12/26/2002	US20020195618 Semiconductor device and manufacturing method of the same
12/26/2002	US20020195613 Low cost fast recovery diode and process of its manufacture
12/26/2002	US20020195604 Display device
12/26/2002	US20020195603 Semiconductor device and method for manufacturing the same
12/25/2002	CN1387740A Pressure transducer
12/25/2002	CN1387677A Method to fabricate MOSFET
12/25/2002	CN1387675A Method for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidifcation
12/25/2002	CN1387267A Organic semiconductor device having short channel
12/25/2002	CN1387248A Semiconductor device isolating method
12/25/2002	CN1387238A Method for mfg. semiconductor device
12/25/2002	CN1097317C Laser diode
12/25/2002	CN1097316C Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display
12/25/2002	CN1097310C Method of forming well of semiconductor device
12/25/2002	CN1097309C Method of producing EEPROM-semiconductor structure
12/25/2002	CN1097304C Semiconductor device fabrication method
12/25/2002	CN1097300C Method for making semiconductor device, display device and electronic apparatus
12/25/2002	CN1097298C Method of making crystal silicon semiconductor and thin film transistor
12/24/2002	US6498753 Semiconductor storage device and production method thereof
12/24/2002	US6498742 Memory device
12/24/2002	US6498634 Liquid crystal electro-optic device
12/24/2002	US6498382 Semiconductor configuration
12/24/2002	US6498381 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
12/24/2002	US6498378 Methods of forming field effect transistors and integrated circuitry
12/24/2002	US6498377 SONOS component having high dielectric property
12/24/2002	US6498376 Semiconductor device and manufacturing method thereof
12/24/2002	US6498374 MOS semiconductor device having gate insulating film containing nitrogen
12/24/2002	US6498371 Body-tied-to-body SOI CMOS inverter circuit
12/24/2002	US6498370 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
12/24/2002	US6498369 Electro-optical device and electronic equipment
12/24/2002	US6498368 Power semiconductor device
12/24/2002	US6498367 Discrete integrated circuit rectifier device
12/24/2002	US6498366 Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode
12/24/2002	US6498365 FET gate oxide layer with graded nitrogen concentration
12/24/2002	US6498363 Gapped-plate capacitor
12/24/2002	US6498362 Weak ferroelectric transistor
12/24/2002	US6498360 Coupled-well structure for transport channel in field effect transistors
12/24/2002	US6498359 Field-effect transistor based on embedded cluster structures and process for its production
12/24/2002	US6498357 Lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process
12/24/2002	US6498354 Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection
12/24/2002	US6498108 Method for removing surface contamination on semiconductor substrates
12/24/2002	US6498107 Interface control for film deposition by gas-cluster ion-beam processing
12/24/2002	US6498097 Apparatus and method of forming preferred orientation-controlled platinum film using oxygen
12/24/2002	US6498087 Method of increasing the conductivity of a transparent conductive layer
12/24/2002	US6498085 Semiconductor device and method of fabricating the same
12/24/2002	US6498084 Method of forming high density EEPROM cell
12/24/2002	US6498082 Method of forming a polysilicon layer
12/24/2002	US6498078 Method for enhancing the solubility of boron and indium in silicon
12/24/2002	US6498077 Semiconductor device and method of manufacturing same
12/24/2002	US6498074 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
12/24/2002	US6498071 Manufacture of trench-gate semiconductor devices
12/24/2002	US6498064 Flash memory with conformal floating gate and the method of making the same
12/24/2002	US6498063 Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth
12/24/2002	US6498062 DRAM access transistor
12/24/2002	US6498060 Semiconductor device and method for making same
12/24/2002	US6498059 Method for fabricating thin film transistor
12/24/2002	US6498053 Process of manufacturing a composite structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material
12/24/2002	US6498050 Bipolar transistor, semiconductor light emitting device and semiconductor device
12/24/2002	US6498049 Display devices
12/24/2002	US6498043 Substrate sensor
12/24/2002	CA2061796C High mobility integrated drivers for active matrix displays
12/19/2002	WO2002101840A1 Iii group nitride based semiconductor element and method for manufacture thereof
12/19/2002	WO2002101837A2 Lateral pin diode and method for producing the same
12/19/2002	WO2002101835A1 Method for manufacturing channel gate type field effect transistor
12/19/2002	WO2002101834A2 An intermediate manufacture for a dual gate logic device
12/19/2002	WO2002101833A1 Multiple gate insulators with strained semiconductor heterostructures
12/19/2002	WO2002101825A1 Method and structure for buried circuits and devices
12/19/2002	WO2002101819A2 Leaky, thermally conductive insulator material (ltcim) in a semiconductor-on-insulator (soi) structure
12/19/2002	WO2002101818A2 Method for isolating semiconductor devices
12/19/2002	WO2002101811A1 Soi mosfet with hyperabrupt source and drain junctions
12/19/2002	WO2002101810A1 C implants for improved sige bipolar transistors yield
12/19/2002	WO2002101809A1 Method for forming an oxide layer
12/19/2002	WO2002101767A2 High voltage, high temperature capacitor structures and methods of fabricating same
12/19/2002	WO2002080227A3 Memory address and decode circuits with ultra thin body transistors
12/19/2002	WO2002065552A3 Semiconductor devices and their peripheral termination
12/19/2002	US20020193551 Conjugated electroluminescent polymers and associated methods of preparation and use
12/19/2002	US20020192979 Dielectric layer forming method and devices formed therewith
12/19/2002	US20020192975 Dielectric layer forming method and devices formed therewith
12/19/2002	US20020192974 Dielectric layer forming method and devices formed therewith
12/19/2002	US20020192959 III nitride semiconductor substrate for ELO

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