| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/02/2003 | EP1271639A2 Method of making a DMOS transistor |
| 01/02/2003 | EP1271638A2 Method of making a DMOS transistor |
| 01/02/2003 | EP1271637A2 Method of making a DMOS transistor |
| 01/02/2003 | EP1271635A1 Process of thermal oxidation of an implanted semiconductor substrate |
| 01/02/2003 | EP1271632A1 Method of forming insulating film and method of producing semiconductor device |
| 01/02/2003 | EP1271630A2 Nitride compound based semiconductor device and manufacturing method of same |
| 01/02/2003 | EP1271628A2 Method of doping a semiconductor |
| 01/02/2003 | EP1271622A2 Method and apparatus for separating member |
| 01/02/2003 | EP1271621A2 Separating apparatus and processing method for plate member |
| 01/02/2003 | EP1271620A1 Method and apparatus for heat treatment of semiconductor films |
| 01/02/2003 | EP1271553A2 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory in multiple-data states |
| 01/02/2003 | EP1271550A2 Method and device for reading dual bit memory cells using multiple reference cells with two side read |
| 01/02/2003 | EP1269568A2 Reconfigurable antenna |
| 01/02/2003 | EP1269549A2 Dmos transistor having a trench gate electrode and method of making the same |
| 01/02/2003 | EP1269548A1 A high voltage thin film transistor with improved on-state characteristics and method for making same |
| 01/02/2003 | EP1269546A1 Bipolar mosfet device |
| 01/02/2003 | EP1269545A1 Silicon-carbon layer in emitter for silicon-germanium heterojunction bipolar transistors |
| 01/02/2003 | EP1269544A2 Method of manufacturing a charge-coupled image sensor |
| 01/02/2003 | EP1269530A2 Method of making a trench gate dmos transistor |
| 01/02/2003 | EP1269528A1 Method of forming a dielectric film |
| 01/02/2003 | EP1269479A1 Bi-directional capable bucket brigade circuit |
| 01/02/2003 | EP1269477A2 Memory cell with doped nanocrystals, method of formation, and operation |
| 01/02/2003 | EP1269251A2 Liquid crystal displays |
| 01/02/2003 | EP1269177A2 Mis hydrogen sensors |
| 01/02/2003 | EP1177451A4 Sensor |
| 01/02/2003 | EP1082763A4 Nrom cell with improved programming, erasing and cycling |
| 01/01/2003 | CN1388986A A method of forming a bottom-gate thin film transistor |
| 01/01/2003 | CN1388593A Semiconductor device and its producing method |
| 01/01/2003 | CN1388592A HF schottky diode |
| 01/01/2003 | CN1388591A Thin film transistor and its producing method |
| 01/01/2003 | CN1388590A Low-temperature polysilicon film transistor with slightly doped drain structure and its making process |
| 01/01/2003 | CN1388589A Enhanced NMOS and PMOS transister with transport factor of strain Si/SiGe layer on silicon insulator (SOI) substrate |
| 01/01/2003 | CN1388588A Compensating device, circuit, method and application |
| 01/01/2003 | CN1388586A 半导体器件 Semiconductor devices |
| 01/01/2003 | CN1388585A Compound semiconductor switch circuit apparatus |
| 01/01/2003 | CN1388575A Method for clearing FAMOS storing cell and related store cell |
| 01/01/2003 | CN1388565A Non-crystalline silicon deposition for continuous horizontol solidification |
| 01/01/2003 | CN1388405A Method for forming liquid crystal layer with ink jet system |
| 01/01/2003 | CN1388134A Recombined clathrate protein, its producing process, noble metal-recombined clathrate protein compound, its producing process and recombined DNA |
| 01/01/2003 | CN1097857C Tunnelling device and its producing method |
| 12/31/2002 | US6502226 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system |
| 12/31/2002 | US6502225 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system |
| 12/31/2002 | US6501689 Semiconductor integrated circuit device |
| 12/31/2002 | US6501685 Channel write/erase flash memory cell and its manufacturing method |
| 12/31/2002 | US6501680 Nonvolatile memory, cell array thereof, and method for sensing data therefrom |
| 12/31/2002 | US6501663 Three-dimensional interconnect system |
| 12/31/2002 | US6501630 Bi-directional ESD diode structure |
| 12/31/2002 | US6501466 Active matrix type display apparatus and drive circuit thereof |
| 12/31/2002 | US6501182 Semiconductor device and method for making the same |
| 12/31/2002 | US6501178 Semiconductor device |
| 12/31/2002 | US6501155 Semiconductor apparatus and process for manufacturing the same |
| 12/31/2002 | US6501153 Semiconductor device and drive circuit using the semiconductor devices |
| 12/31/2002 | US6501152 Lateral pnp transistor integrated circuit; lightly doped drain extension implant blocked from the emitter region but not the collector region; improved gain and/or early voltage |
| 12/31/2002 | US6501148 Trench isolation for semiconductor device with lateral projections above substrate |
| 12/31/2002 | US6501146 Semiconductor device and method of manufacturing thereof |
| 12/31/2002 | US6501145 Semiconductor component and method for producing the same |
| 12/31/2002 | US6501143 Spin-valve transistor |
| 12/31/2002 | US6501139 Channel region underlies at least a portion of the gate electrode and is separated from the isolation region by a portion of the well region; can be easily integrated into a complimentary-metal-oxide-semiconductor (cmos) |
| 12/31/2002 | US6501137 Electrostatic discharge protection circuit triggered by PNP bipolar action |
| 12/31/2002 | US6501136 High-speed MOSFET structure for ESD protection |
| 12/31/2002 | US6501135 Germanium-on-insulator (GOI) device |
| 12/31/2002 | US6501134 Ultra thin SOI devices with improved short-channel control |
| 12/31/2002 | US6501133 SOI semiconductor device and method of manufacturing the same |
| 12/31/2002 | US6501132 Transistor with variable channel width |
| 12/31/2002 | US6501131 Transistors having independently adjustable parameters |
| 12/31/2002 | US6501130 High-voltage transistor with buried conduction layer |
| 12/31/2002 | US6501129 Semiconductor device |
| 12/31/2002 | US6501128 Insulated gate transistor and the method of manufacturing the same |
| 12/31/2002 | US6501127 Semiconductor device including a nonvolatile memory-cell array, and method of manufacturing the same |
| 12/31/2002 | US6501126 Semiconductor structure and procedure for minimizing non-idealities |
| 12/31/2002 | US6501125 Semiconductor device and manufacturing method thereof |
| 12/31/2002 | US6501123 High gate coupling non-volatile memory structure |
| 12/31/2002 | US6501122 Flash device having a large planar area ono interpoly dielectric |
| 12/31/2002 | US6501121 Semiconductor structure |
| 12/31/2002 | US6501117 Static self-refreshing DRAM structure and operating mode |
| 12/31/2002 | US6501108 Semiconductor integrated circuit |
| 12/31/2002 | US6501105 Compound semiconductor device |
| 12/31/2002 | US6501104 High speed semiconductor photodetector |
| 12/31/2002 | US6501099 Modified-anode gate turn-off thyristor |
| 12/31/2002 | US6501098 Semiconductor device |
| 12/31/2002 | US6501097 Electro-optical device |
| 12/31/2002 | US6501096 Display and fabricating method thereof |
| 12/31/2002 | US6501095 Thin film transistor |
| 12/31/2002 | US6501094 Semiconductor device comprising a bottom gate type thin film transistor |
| 12/31/2002 | US6501070 Pod load interface equipment adapted for implementation in a fims system |
| 12/31/2002 | US6500769 Semiconductor device and method for fabricating the same |
| 12/31/2002 | US6500745 Method for manufacturing sidewall spacers of a semiconductor device with high etch selectivity and minimized shaving |
| 12/31/2002 | US6500743 Method of copper-polysilicon T-gate formation |
| 12/31/2002 | US6500740 Process for fabricating semiconductor devices in which the distribution of dopants is controlled |
| 12/31/2002 | US6500739 Formation of an indium retrograde profile via antimony ion implantation to improve NMOS short channel effect |
| 12/31/2002 | US6500736 Crystallization method of amorphous silicon |
| 12/31/2002 | US6500735 Forming a semiconductor layer having an acute projection of polycrystalline silicon on a substrate, and forming an insulating layer layer by oxidation so the radius of curvature of the projection is a given value |
| 12/31/2002 | US6500721 Bipolar thin-film transistors and method for forming |
| 12/31/2002 | US6500720 Method of manufacturing semiconductor device |
| 12/31/2002 | US6500718 Method for fabricating semiconductor device |
| 12/31/2002 | US6500716 Method for fabricating high voltage transistor |
| 12/31/2002 | US6500710 Method of manufacturing a nonvolatile semiconductor memory device |
| 12/31/2002 | US6500704 Semiconductor device, display device and method of fabricating the same |
| 12/31/2002 | US6500703 Insulated gate semiconductor device and process for fabricating the same |
| 12/31/2002 | US6500702 Method for manufacturing thin film transistor liquid crystal display |