Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/1997
10/14/1997US5677238 Semiconductor contact metallization
10/14/1997US5677237 Forming a voidless tungsten filled contact holes by selective depositing tungsten on surface and inside the contact hole
10/14/1997US5677235 Supplying disilane process gas to targets in heated, depressurized reaction vessel
10/14/1997US5677234 Methods of forming isolated semiconductor device active regions
10/14/1997US5677233 Process of fabricating semiconductor device having isolating oxide rising out of groove
10/14/1997US5677232 Methods of fabricating combined field oxide/trench isolation regions
10/14/1997US5677231 Depositing layer of aluminum nitride over semiconductor substrate to form liner along sidewall and bottom of trench, depositing oxide to fill rest of trench, planarizing to form trench isolation region
10/14/1997US5677230 Providing substrate with mesa, depositing layer of dielectric material on substrate, etching, depositing layer of spin on glass, etching, forming contactors
10/14/1997US5677229 Method for manufacturing semiconductor device isolation region
10/14/1997US5677228 Forming a trench by photolithographic process, vapor depositing silicon dioxide coverings, polysilicon layer, doped silicon layer, etching, annealing to diffuse the dopant
10/14/1997US5677227 Forming dynamic random access memory device with increased surface area and capacitance
10/14/1997US5677226 Method of making integrated circuits
10/14/1997US5677225 Photolithographic making a capacitor shaped like a cylindrical pole in the trench
10/14/1997US5677224 Method of making asymmetrical N-channel and P-channel devices
10/14/1997US5677223 Method for manufacturing a DRAM with reduced cell area
10/14/1997US5677222 Method for forming a DRAM capacitor
10/14/1997US5677221 Forming an isolation layer over semiconductor, covering with a nitride layer, etching to form contact hole filled with polysilicon; photolithography
10/14/1997US5677220 Method of manufacturing a semiconductor device
10/14/1997US5677219 Forming isolation collar in top portion of trench comprising layer of nitride on layer of oxide, filling top portion by epitaxially growing semiconductor material therein
10/14/1997US5677218 Forming gate oxide layer on substrate, forming polysilicon layer, forming dielectric charge, patterning, etching, forming spacers, doping, oxidizing polysilicon layer, etching to form gate
10/14/1997US5677217 Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate
10/14/1997US5677216 Forming trench in polysilicon gate to increase surface area
10/14/1997US5677215 Method of fabricating a nonvolatile semiconductor memory device
10/14/1997US5677214 Raised source/drain MOS transistor with covered epitaxial notches and fabrication method
10/14/1997US5677213 Method for forming a semiconductor device having a shallow junction and a low sheet resistance
10/14/1997US5677212 Method of forming a liquid crystal device
10/14/1997US5677211 Method for manufacturing a thin film transistor
10/14/1997US5677210 Method of producing a fully planarized concave transistor
10/14/1997US5677209 Method for fabricating a vertical bipolar transistor
10/14/1997US5677208 Method for making FET having reduced oxidation inductive stacking fault
10/14/1997US5677207 Method for fabricating a thin film transistor using silicide layer
10/14/1997US5677206 Method of making a poly-silicon thin film transistor having lightly doped drain structure
10/14/1997US5677205 Method for forming electrostatic discharge protection device for integrated circuit
10/14/1997US5677204 Method of evaluating a thin film for use in semiconductor device
10/14/1997US5677113 Method for ashing a photoresist resin film on a semiconductor wafer and an asher
10/14/1997US5677111 Semiconductors
10/14/1997US5677109 Method for E-beam writing
10/14/1997US5677103 Comprising quinonediazide sulfonic acid ester of aromatic polyhydroxy compound, alkali soluble resin, solvent, additives; high sensitivity and resolution
10/14/1997US5677102 Method for the preparation of photoresist solution
10/14/1997US5677092 Process for fabricating phase shift mask and process of semiconductor integrated circuit device
10/14/1997US5677052 Aluminum nitride ceramics and method for preparing the same
10/14/1997US5677015 Chemical vapor deposition using a mixed gas comprising a cyclopentane tantalum azide and a nitrogen containing gas
10/14/1997US5677011 Premasking
10/14/1997US5677000 Substrate spin treating method and apparatus
10/14/1997US5676907 Method for making near net shape ceramic-metal composites
10/14/1997US5676869 Vertical heat treatment apparatus
10/14/1997US5676855 Multiple substrate and process for its production
10/14/1997US5676853 Mask for forming features on a semiconductor substrate and a method for forming the mask
10/14/1997US5676788 Method for forming cavity structures using thermally decomposable surface layer
10/14/1997US5676781 Mixing hollow and non-hollow inorganic powders, binder, solvent to form slurry, spreading on substrate, drying, cutting into sheets, forming via holes, printing conductor paste on surface, stacking sheets, firing
10/14/1997US5676765 Exhibits photoelectric conversion efficiency even when continuously subjected to irradiation of light over long periods of time
10/14/1997US5676760 Method for wet processing of a semiconductor substrate
10/14/1997US5676759 Plasma dry cleaning of semiconductor processing chambers
10/14/1997US5676758 CVD apparatus
10/14/1997US5676757 Decompression container
10/14/1997US5676752 Method of producing sheets of crystalline material and devices made therefrom
10/14/1997US5676751 Czochralski method wherein single crystal silicon rod is pulled from silicon melt in crucible in chamber comprising cooling chamber with flow of gas having specified thermoconductivity
10/14/1997US5676590 Polishing apparatus provided with abrasive cloth
10/14/1997US5676587 Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
10/14/1997US5676301 Castellated nozzle and method of use thereof
10/14/1997US5676205 Quasi-infinite heat source/sink
10/14/1997US5675957 Device loading/unloading apparatus for semiconductor device handler
10/14/1997US5675889 Solder ball connections and assembly process
10/14/1997US5675884 Apparatus for multilayer conductor chip packaging
10/14/1997US5675856 For cleaning a thin disk
10/14/1997CA2049795C Process for fabricating a device
10/12/1997CA2201810A1 Gas-controlled arc apparatus and process
10/09/1997WO1997037520A1 Method for depositing solder onto pad-on and pad-off via contacts
10/09/1997WO1997037386A1 Field effect transistor with higher mobility
10/09/1997WO1997037384A1 Multilayer solder interconnection structure
10/09/1997WO1997037383A1 Standardized bonding location process and apparatus
10/09/1997WO1997037382A1 Dynamic feedback electrostatic wafer chuck
10/09/1997WO1997037381A1 Instrument and mounting equipment used in clean room
10/09/1997WO1997037380A1 Method of processing a semiconductor wafer for controlling drive current
10/09/1997WO1997037379A1 In-situ sensor for the measurement of deposition on etching chamber walls
10/09/1997WO1997037378A1 Visual inspection device for wafer bump and height measuring device
10/09/1997WO1997037377A1 Manufacture of a semiconductor device with an epitaxial semiconductor zone
10/09/1997WO1997037376A1 A method and apparatus for determining the center and orientation of a wafer-like object
10/09/1997WO1997037375A1 Solid state temperature controlled substrate holder
10/09/1997WO1997037283A1 Lithographic scanning exposure projection apparatus
10/09/1997WO1997037282A1 Scanning-slit exposure device
10/09/1997WO1997037161A1 Method and apparatus for pressure control in vacuum processors
10/09/1997WO1997037064A1 Method and apparatus for growing oriented whisker arrays
10/09/1997WO1997037059A1 Showerhead for uniform distribution of process gas
10/09/1997WO1997037055A1 Plasma device and method utilizing azimuthally and axially uniform electric field
10/09/1997WO1997036843A1 Tape cast silicon carbide dummy wafer
10/09/1997WO1997036693A1 Process to modify work functions using ion implantation
10/09/1997DE19648471A1 Semiconductor nitride layer etching system
10/09/1997DE19633729A1 Chip to lead frame bonding process
10/09/1997DE19625169A1 Hierarchical word line structure for semiconductor memory device
10/09/1997DE19613620A1 Verfahren zum Behandeln von Substraten A method for treating substrates
10/09/1997DE19613561A1 Verfahren zum Vereinzeln von elektronischen Elementen A method of separating electronic elements
10/08/1997EP0800273A2 Inductive driver and method therefor
10/08/1997EP0800218A2 Variable capacitance and method for making the same
10/08/1997EP0800217A1 Metal-insulator-metal capacitor
10/08/1997EP0800215A2 Circuit structure with at least one MOS-transistor and method of fabrication
10/08/1997EP0800214A1 Device in nitrogen containing semiconductor material
10/08/1997EP0800213A2 Charge transfer device and method of driving the charge transfer device
10/08/1997EP0800212A2 Semiconductor integrated circuit device
10/08/1997EP0800209A1 Safety device for a semi-conductor chip