Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/1997
09/23/1997US5670823 Nitrided layers of titanium-tungsten
09/23/1997US5670821 Guard ring for mitigation of parasitic transistors in junction isolated integrated circuits
09/23/1997US5670820 Semiconductor element incorporating a resistive device
09/23/1997US5670819 Semiconductor device with pad electrode
09/23/1997US5670813 Protection circuit for electronic components employing bipolar transistors
09/23/1997US5670811 Vertical insulated gate semiconductor device having high current density and high reliability
09/23/1997US5670810 Semiconductor device with a vertical field effect transistor
09/23/1997US5670809 Non-volatile semiconductor memory device
09/23/1997US5670808 Semiconductor
09/23/1997US5670806 Semiconductor memory device
09/23/1997US5670805 Controlled recrystallization of buried strap in a semiconductor memory device
09/23/1997US5670803 Three-dimensional SRAM trench structure and fabrication method therefor
09/23/1997US5670802 Semiconductor device
09/23/1997US5670801 Heterojunction bipolar transistor
09/23/1997US5670800 Intermetallic layer on base substrate; semiconductor layer on intermetallic layer; semiconductor elements on wiring
09/23/1997US5670794 Thin film transistors
09/23/1997US5670793 Depositing pure silicon, then impurity layer at interface; heat treatment
09/23/1997US5670790 Electronic device
09/23/1997US5670785 Charge converter provided in an ion implantation apparatus
09/23/1997US5670432 Thermal treatment to form a void free aluminum metal layer for a semiconductor device
09/23/1997US5670431 Method of forming an ultra thin dielectric film for a capacitor
09/23/1997US5670428 Semiconductor chip kerf clear method and resultant semiconductor chip and electronic module formed from the same
09/23/1997US5670427 Method for forming metal contacts in semiconductor devices
09/23/1997US5670426 Performing main etch and over etch of oxide layer through photoresist mask, further soft and after etch of exposed silicon in contact hole, depositing metal in said hole to form contact plug
09/23/1997US5670425 Process for making integrated circuit structure comprising local area interconnects formed over semiconductor substrate by selective deposition on seed layer in patterned trench
09/23/1997US5670424 Method for making local interconnect structure
09/23/1997US5670423 Method for using disposable hard mask for gate critical dimension control
09/23/1997US5670422 Tungsten buried in contact holes by blanket vapor deposition
09/23/1997US5670421 Process for forming multilayer wiring
09/23/1997US5670420 Ion-implanting an insulating film in the surface of an oxide film; corrosion and oxidation resistance
09/23/1997US5670419 Depositing amorphous silicon in low pressure, nitrogen-free atmosphere to prevent nitriding
09/23/1997US5670418 Overcoating with gold; then an electroconductive material
09/23/1997US5670417 Method for fabricating self-aligned semiconductor component
09/23/1997US5670415 Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
09/23/1997US5670414 Carbonization
09/23/1997US5670413 Method and apparatus for radiation hardened isolation
09/23/1997US5670412 Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate
09/23/1997US5670411 Anodizing silicon substrate, epitaxially growing silicon thin film, oxidizing surface, forming insulating layer, bonding to second substrate, heating, etching
09/23/1997US5670410 End-point detection
09/23/1997US5670409 Method of fabricating a semiconductor IC DRAM device enjoying enhanced focus margin
09/23/1997US5670408 Thin film capacitor with small leakage current and method for fabricating the same
09/23/1997US5670407 Method of fabricating a toothed-shape capacitor node in a semiconductor DRAM circuit
09/23/1997US5670406 Miniaturizes semiconductor memories
09/23/1997US5670405 Forming first conductive layer, forming dot silicon layer, doping with oxygen, annealing, etching, forming dielectric and second electroconductive layers
09/23/1997US5670404 Using undoped polysilicon etch-stop
09/23/1997US5670402 Method of manufacturing core implanted semiconductor devices
09/23/1997US5670401 Method for fabricating a deep submicron mosfet device using an in-situ polymer spacer to decrease device channel length
09/23/1997US5670400 Method for making dual gate insulating film without edge-thinning
09/23/1997US5670399 Method of making thin film transistor with offset drain
09/23/1997US5670398 Method of manufacturing thin film transistor having a double channel
09/23/1997US5670397 Dual poly-gate deep submicron CMOS with buried contact technology
09/23/1997US5670396 Method of forming a DMOS-controlled lateral bipolar transistor
09/23/1997US5670395 Forming silicon oxide, nitride and photoresist layers; exposure to actinic radiation and masking; etching, doping
09/23/1997US5670394 Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source
09/23/1997US5670392 Process for manufacturing high-density MOS-technology power devices
09/23/1997US5670391 Process for reducing transient diffusion of dopant atoms
09/23/1997US5670390 Silicon layer is coated with oxidation resistant film
09/23/1997US5670389 Semiconductor-on-insulator device having a laterally-graded channel region and method of making
09/23/1997US5670387 Process for forming semiconductor-on-insulator device
09/23/1997US5670376 Measuring electroconductivity of solvent; semiconductor manufacturing
09/23/1997US5670299 Pattern formation process
09/23/1997US5670298 Forming porous layer, then photoresists; etching
09/23/1997US5670297 Process for the formation of a metal pattern
09/23/1997US5670293 Lead-frame forming material
09/23/1997US5670281 Radiation transparent substrate, opaque patterns and transparent patterns
09/23/1997US5670279 Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
09/23/1997US5670248 Selective radiation converters in solar energy and power industry
09/23/1997US5670218 Method for forming ferroelectric thin film and apparatus therefor
09/23/1997US5670217 Method for capturing and removing contaminant particles from an interior region of an ion implanter
09/23/1997US5670210 Method of uniformly coating a substrate
09/23/1997US5670066 Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
09/23/1997US5670062 Multilayer element with metal on substrate, photoresists and etching
09/23/1997US5670019 Titanium nitride adhesion layers, dielectric layers and conductors, etching, immersion in oxidizing agent and drying
09/23/1997US5670018 Isotropic silicon etch process that is highly selective to tungsten
09/23/1997US5670017 Method of manufacturing semiconductor device
09/23/1997US5670016 Dipping into solution of hydroxylamine sulfate; agitation
09/23/1997US5669979 Photoreactive surface processing
09/23/1997US5669977 Shape memory alloy lift pins for semiconductor processing equipment
09/23/1997US5669976 CVD method and apparatus therefor
09/23/1997US5669975 Plasma producing method and apparatus including an inductively-coupled plasma source
09/23/1997US5669814 Facility installation structure in clean room
09/23/1997US5669774 Ball grid array socket
09/23/1997US5669752 Semiconductor wafer pre-aligning apparatus
09/23/1997US5669644 Wafer transfer plate
09/23/1997US5669600 X-Y table
09/23/1997US5669599 For transporting integrated circuits during malfunctioning processes
09/23/1997US5669546 Apparatus for manufacturing semiconductor device and method of manufacturing the semiconductor device using the same
09/23/1997US5669545 Apparatus for bonding a flip chip to a substrate
09/23/1997US5669513 Wafer carriage
09/23/1997US5669508 Pod carrier function expansion by adding a fixture
09/23/1997US5669437 High efficiency thermal interposer
09/23/1997US5669408 Pressure type flow rate control apparatus
09/23/1997US5669316 Turntable for rotating a wafer carrier
09/23/1997US5669303 Apparatus and method for stamping a surface
09/20/1997CA2200264A1 Substrate of the silicon on insulator type for the production of transistors and preparation process for such a substrate
09/18/1997WO1997034324A1 Vertical power mosfet having reduced sensitivity to variations in thickness of epitaxial layer
09/18/1997WO1997034323A1 Memory cell arrangement with vertical mos transistors and the production process thereof
09/18/1997WO1997034321A2 Semiconductor body with a substrate glued to a support body
09/18/1997WO1997034320A1 Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits
09/18/1997WO1997034318A1 Heat-treating method and radiant heating device