Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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12/02/1997 | US5694185 Matrix array of active matrix LCD and manufacturing method thereof |
12/02/1997 | US5694106 Safety switch with overload protection circuit |
12/02/1997 | US5694078 Semiconductor integrated circuit having regularly arranged transistor basic cells |
12/02/1997 | US5694075 Substrate clamp for non-isolated integrated circuits |
12/02/1997 | US5694071 Electronic device comprising means for compensating an undesired capacitance |
12/02/1997 | US5694050 Multiprobing semiconductor test method for testing a plurality of chips simultaneously |
12/02/1997 | US5693984 Semiconductor device having a heat radiator |
12/02/1997 | US5693983 Thin-film structure with conductive molybdenum-chromium line |
12/02/1997 | US5693981 Semiconductor device |
12/02/1997 | US5693979 Semiconductor device |
12/02/1997 | US5693978 Reset signal output circuit and semiconductor integrated circuit device |
12/02/1997 | US5693976 MOSFET device having denuded zones for forming alignment marks |
12/02/1997 | US5693975 Compact P-channel/N-channel transistor structure |
12/02/1997 | US5693974 Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron MOSFETS |
12/02/1997 | US5693973 Protection structure of semiconductor integrated circuit |
12/02/1997 | US5693972 Method and system for protecting a stacked gate edge in a semiconductor device from self-aligned source (sas) etch in a semiconductor device |
12/02/1997 | US5693971 Combined trench and field isolation structure for semiconductor devices |
12/02/1997 | US5693970 Semiconductor memory device |
12/02/1997 | US5693969 MESFET having a termination layer in the channel layer |
12/02/1997 | US5693964 Electric field relaxation layer comprising indium gallium arsenic on both sides of gate electrode producing a potential difference and current flow |
12/02/1997 | US5693961 Top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen |
12/02/1997 | US5693959 Thin film transistor and liquid crystal display using the same |
12/02/1997 | US5693950 Projection system for charged particles |
12/02/1997 | US5693939 MeV neutral beam ion implanter |
12/02/1997 | US5693701 Tamper-proof electronic coatings |
12/02/1997 | US5693581 Feeding gaseous mixture containing boron trihalide and ammonia to furnace, heating, adding hydrocarbon gas source to codeposit boron nitride and carbon, controlling flow of hydrocarbon gas to control concentration of carbon |
12/02/1997 | US5693579 Semiconductor manufacturing method and semiconductor device manufacturing apparatus |
12/02/1997 | US5693578 Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance |
12/02/1997 | US5693574 Applying a layer of aluminum to front side of each of silicon semiconductor slices, applying germenium layer on to of first layer, stacking slices, alloying the both layers in presecne of heat and pressure |
12/02/1997 | US5693573 Weakening the adhesion by plating a thin film over, removing the plated thin film, plurality connectors by wet etching |
12/02/1997 | US5693569 Method of forming silicon carbide trench mosfet with a schottky electrode |
12/02/1997 | US5693568 Depositing sequential dielectric and conductive layers on a semiconductor substrate, forming interconnection, etching first and second conductive layers |
12/02/1997 | US5693567 Performing two etching operations on an insulating layer to expose different parts of a conductive layer |
12/02/1997 | US5693566 Layered low dielectric constant technology |
12/02/1997 | US5693565 Providing semiconductor chip comprising substrate with surface containing integrated circuits, bond pad, passivation layer, applying resin, heating, applying silicon carbide coating, depositing and patterning barrier layers |
12/02/1997 | US5693564 Conductor fill reflow with intermetallic compound wetting layer for semiconductor fabrication |
12/02/1997 | US5693563 Forming a connector in integrated circuit by double level process of patterning, etching, depositing |
12/02/1997 | US5693562 Method for forming a barrier metal film with conformal step coverage in a semiconductor integrated circuit |
12/02/1997 | US5693561 Forming dielectric layer on a substrate, exposing selected portion under dielectric by forming windows, depositing titanium and titanium nitride layers, sealing nitride grain edges by rinsing with water, vapor depositing tungsten |
12/02/1997 | US5693560 Comprising a refractory metal compound layer on oxygen absorbing layer; preventing defect drifting, heat resistance |
12/02/1997 | US5693557 Method of fabricating a semiconductor device |
12/02/1997 | US5693556 Method of making an antifuse metal post structure |
12/02/1997 | US5693555 Method for fabricating BiCMOS device |
12/02/1997 | US5693554 Self-alignment; forming a plate electrode |
12/02/1997 | US5693553 Semiconductor device and manufacturing method of the same |
12/02/1997 | US5693552 Method for fabricating read-only memory device with a three-dimensional memory cell structure |
12/02/1997 | US5693551 Method for fabricating a tri-state read-only memory device |
12/02/1997 | US5693550 Method of fabricating self-aligned silicide device using CMP |
12/02/1997 | US5693549 Method of fabricating thin film transistor with supplementary gates |
12/02/1997 | US5693548 Method for making T-gate of field effect transistor |
12/02/1997 | US5693547 Method of making vertical MOSFET with sub-trench source contact |
12/02/1997 | US5693546 Doping the amorphous silicon through oxide layer using electrode as mask |
12/02/1997 | US5693544 N-type higfet and method |
12/02/1997 | US5693543 Method of manufacturing a semiconductor IIL device with dielectric and diffusion isolation |
12/02/1997 | US5693542 Method for forming a transistor with a trench |
12/02/1997 | US5693541 Method for manufacturing a semiconductor device using a silicon nitride mask |
12/02/1997 | US5693540 Method of fabricating integrated circuits |
12/02/1997 | US5693505 Method of fabricating a semiconductor device |
12/02/1997 | US5693453 Method of forming micropattern |
12/02/1997 | US5693452 Positive chemically amplified resist composition |
12/02/1997 | US5693439 Exposure method and apparatus |
12/02/1997 | US5693382 Frame-supported pellicle for dustproof protection of photomask in photolithography |
12/02/1997 | US5693239 Polishing slurries comprising two abrasive components and methods for their use |
12/02/1997 | US5693238 Method for improving the rate of a plasma enhanced vacuum treatment |
12/02/1997 | US5693234 Method for producing at least one recess in a surface of a substrate apparatus for carrying out the said method and use of the product thus obtained |
12/02/1997 | US5693189 Method and apparatus for supply of liquid raw material gas |
12/02/1997 | US5693183 Method for treating the surface of silicon substrate post dry etching process |
12/02/1997 | US5693182 Method for damage etching the back side of a semiconductor disk having a protected front side |
12/02/1997 | US5693180 Ion milling with silicon tetrachloride and chloride gas mixture |
12/02/1997 | US5693179 Contaminant reduction improvements for plasma etch chambers |
12/02/1997 | US5693149 Process for treating disk-shaped workpieces with a liquid |
12/02/1997 | US5693148 Scrubbing semiconductor wafers with basic solution to remove impurities |
12/02/1997 | US5693139 Doping compound semiconductor single crystal layer by alternate introduction of source gases while growth chamber is being evacuated continuously |
12/02/1997 | US5692947 Linear polisher and method for semiconductor wafer planarization |
12/02/1997 | US5692873 Apparatus for holding a piece of semiconductor |
12/02/1997 | US5692869 Apparatus for transferring semiconductor silicon wafers |
12/02/1997 | US5692298 Method of making ceramic microwave electronic package |
12/02/1997 | US5692296 Method for encapsulating an integrated circuit package |
12/02/1997 | US5692281 Method for making a dual trench capacitor structure |
12/02/1997 | CA2009067C Trench gate complimentary metal oxide semiconductor transistor |
11/30/1997 | CA2207773A1 Method and apparatus for ion formation in an ion implanter |
11/27/1997 | WO1997044891A1 Electrostatic chuck |
11/27/1997 | WO1997044826A1 Dram cell array and method of manufacturing it |
11/27/1997 | WO1997044822A1 Ultra thin ball grid array package using a flex tape or printed wiring board substrate and method |
11/27/1997 | WO1997044820A1 Low-pressure processing device |
11/27/1997 | WO1997044819A1 Process and device for fastening bonding wires to bond lands of a hybrid circuit |
11/27/1997 | WO1997044818A1 Method and apparatus for misted liquid source deposition of thin films with increased yield |
11/27/1997 | WO1997044817A1 Hot ultra-pure water dewaxing process |
11/27/1997 | WO1997044816A1 Method and apparatus for positioning a substrate |
11/27/1997 | WO1997044812A1 Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor |
11/27/1997 | WO1997044712A1 Photosensitive solutions and use thereof in making thin films |
11/27/1997 | WO1997044710A1 Attenuating embedded phase shift photomask blanks |
11/27/1997 | WO1997044709A1 Attenuating embedded phase shift photomask blanks |
11/27/1997 | WO1997044676A1 Microelectronic contact structure and method of making same |
11/27/1997 | WO1997044649A1 Method and apparatus for analysing optical parameters |
11/27/1997 | WO1997044634A1 Device for inspecting terminals of semiconductor package |
11/27/1997 | WO1997044176A1 Device for separating and transporting moulding material parts and device and method for grouping, positioning and transporting moulding material parts |
11/27/1997 | WO1997044160A1 Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
11/27/1997 | WO1997040423A3 Cleaning and stripping of photoresist from surfaces of semiconductor wafers |
11/27/1997 | WO1997036317A3 A method for producing a semiconductor device having semiconductor layers of sic by the use of an implanting step and a device produced thereby |