H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/1997
12/29/1997	EP0813752A1 Capacitor structure for an integrated circuit and method of fabrication thereof
12/29/1997	EP0813750A1 Process for making a z-axis adhesive and establishing electrical interconnection therewith
12/29/1997	EP0813749A1 Electronic device manufacture with a laser beam
12/29/1997	EP0813748A1 Multilayered electrostatic chuck and method of manufacture thereof
12/29/1997	EP0813747A1 Thermal processing apparatus and process
12/29/1997	EP0813745A1 Electron beam pattern-writing column
12/29/1997	EP0813453A1 Cleaning device and method
12/29/1997	EP0792462A4 Probe card assembly and kit, and methods of using same
12/29/1997	EP0783767A4 Bipolar transistor for use in linear amplifiers
12/29/1997	EP0776527A4 Electrostatic discharge protection circuit
12/29/1997	EP0725975A4 Detection system for measuring high aspect ratio
12/29/1997	EP0706425A4 Selective plasma deposition
12/29/1997	EP0680384A4 Microwave energized process for the preparation of high quality semiconductor material.
12/29/1997	EP0531550B1 Field effect transistor
12/29/1997	EP0516847B1 Semiconductor device
12/24/1997	WO1997049134A2 Soi-transistor circuitry employing soi-transistors and method of manufacture thereof
12/24/1997	WO1997049133A2 Integrated circuit device with embedded flash memory and method for manufacturing same
12/24/1997	WO1997049131A1 Semiconductor device with buried conductive silicide layer
12/24/1997	WO1997049130A1 Method and apparatus for manufacturing side-terminated chips
12/24/1997	WO1997049129A1 Method and structure for isolating semiconductor devices after transistor formation
12/24/1997	WO1997049128A1 Wedge device for linear force amplification in a press
12/24/1997	WO1997049127A1 Method and apparatus for reducing warpage in semiconductor packages
12/24/1997	WO1997049126A1 Method of reducing transistor channel length with oxidation inhibiting spacers
12/24/1997	WO1997049125A2 Method of manufacturing an electronic device comprising thin-film transistors
12/24/1997	WO1997049124A1 A method for producing a channel region layer in a voltage controlled semiconductor device
12/24/1997	WO1997049123A1 Bump bonding device and bump bonding method
12/24/1997	WO1997049122A1 Method for cleaning a hole
12/24/1997	WO1997049121A1 Cmos gate structure and method for making same
12/24/1997	WO1997049120A1 Dopant profile spreading for arsenic source/drain
12/24/1997	WO1997049119A1 Photoelectronic material, device using the same, and method for manufacturing the same
12/24/1997	WO1997049116A1 Gas delivery systems for particle beam processing
12/24/1997	WO1997049103A1 A stabilized polysilicon resistor and a method of manufacturing it
12/24/1997	WO1997048658A1 Photosensitive ceramic green sheet, ceramic package, and process for producing the same
12/24/1997	WO1997048526A1 Grinding machine spindle flexibly attached to platform
12/24/1997	WO1997048525A1 Workpiece inspection and handling
12/24/1997	WO1997048522A1 Improvements in and relating to grinding machines
12/24/1997	WO1997041602A3 Semiconductor device provided with a resistance element
12/24/1997	CN1168741A Split-polysilicon CMOS process for multi-megabit dynamic memories with stacked capacitor cells
12/24/1997	CN1168740A Process for producing a read-only storage cell arrangement with vertical MOS transistors
12/24/1997	CN1168739A A novel via hole profile and method of fabrication
12/24/1997	CN1168617A Plastic ball grid array module
12/24/1997	CN1168556A Switching mechanism for gas insulated switch gear
12/24/1997	CN1168539A Method of programming flash memory cell
12/24/1997	CN1168538A Semiconductor device and manufacturing methods thereof
12/24/1997	CN1168537A Semiconductor integrated circuit device having high input/output connections
12/24/1997	CN1168536A Semiconductor wafer with solder layer
12/24/1997	CN1168535A Plasma etching method in manufacturing process of semiconductor device
12/24/1997	CN1168534A Method for producing wafer and apparatus employed therein
12/24/1997	CN1168472A 半导体加速度传感器 Semiconductor acceleration sensor
12/24/1997	CN1168401A Composition for anti-reflection coating
12/24/1997	CN1036816C Double implanted laterally diffused MOS device and method thereof
12/24/1997	CN1036814C Method for forming contact holes of a semiconductor device
12/24/1997	CN1036813C Semiconductor substrate and process for producing same
12/24/1997	CA2258649A1 Gas delivery systems for particle beam processing
12/24/1997	CA2258506A1 A stabilized polysilicon resistor and a method of manufacturing it
12/23/1997	US5701507 Architecture of a chip having multiple processors and multiple memories
12/23/1997	US5701362 Wire breakage detecting method
12/23/1997	US5701306 Semiconductor integrated circuit which can be tested by an LSI tester having a reduced number of pins
12/23/1997	US5701274 Semiconductor device with selectable device information
12/23/1997	US5701272 Negative voltage switching circuit
12/23/1997	US5701264 Dynamic random access memory cell having increased capacitance
12/23/1997	US5701228 Stage system or device
12/23/1997	US5701169 Illumination system and exposure apparatus with demountable transparent protective member
12/23/1997	US5701167 LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region
12/23/1997	US5701088 Method of evaluating a MIS-type semiconductor device
12/23/1997	US5701087 Prescaler IC test method capable of executing alternate current test by the use of IC tester for direct current test
12/23/1997	US5701086 Connecting test equipment to adjacent legs of an IC or the like by interdigitating conductive wedges with the legs
12/23/1997	US5701041 Weight supporting apparatus
12/23/1997	US5701037 Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit
12/23/1997	US5701035 Electrode structure and method for fabricating the same
12/23/1997	US5701034 Packaged semiconductor die including heat sink with locking feature
12/23/1997	US5701029 Semiconductor having polycrystalline silicon sandwiched by semiconductor substrate and metal silicide
12/23/1997	US5701028 Semiconductor device having tab leads
12/23/1997	US5701026 Lateral trench MISFET
12/23/1997	US5701025 Semiconductor integrated circuit device and fabrication method therefor
12/23/1997	US5701022 Semiconductor memory device with trench capacitor
12/23/1997	US5701019 Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer
12/23/1997	US5701014 Projection lithography apparatus
12/23/1997	US5700981 Encapsulated electronic component and method for encapsulating an electronic component
12/23/1997	US5700975 Semiconductor device
12/23/1997	US5700740 Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species
12/23/1997	US5700739 Method of multi-step reactive ion etch for patterning adjoining semiconductor metallization layers
12/23/1997	US5700738 Forming adhesion layer on front of silicon substrate, forming silicon oxide film on side and rear of silicon substrate, forming metal film on adhesion layer while feeding inactive gas
12/23/1997	US5700737 PECVD silicon nitride for etch stop mask and ozone TEOS pattern sensitivity elimination
12/23/1997	US5700736 Forming insulating layer containing silicon, oxygen and fluorine having silicon-fluorine bonds
12/23/1997	US5700734 Process of fabricating field effect transistor having reliable polycide gate electrode
12/23/1997	US5700733 Semiconductor processing methods of forming field oxide regions on a semiconductor substrate
12/23/1997	US5700732 Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
12/23/1997	US5700731 Method for manufacturing crown-shaped storage capacitors on dynamic random access memory cells
12/23/1997	US5700730 Semiconductor processing method of providing dopant impurity into a semiconductor substrate
12/23/1997	US5700729 Masked-gate MOS S/D implantation
12/23/1997	US5700728 Method of forming an MNOS/MONOS by employing large tilt angle ion implantation underneath the field oxide
12/23/1997	US5700727 Method of forming a thin film transistor
12/23/1997	US5700726 Depositing dielectric layer on substrate, using photolithographic processing to open region, etching, depositing titanium, titanium nitride, tungsten layers
12/23/1997	US5700725 Apparatus and method for making integrated circuits
12/23/1997	US5700723 Method of packaging an integrated circuit
12/23/1997	US5700722 Forming opening in interlayer insulating layer, depositing silica based material, depositing metal layer, diffusing
12/23/1997	US5700720 Forming lower wires on semiconductor substrate, forming first and second silicon dioxide films by reacting silane gas with hydrogen peroxide, forming upper wires on film
12/23/1997	US5700719 Semiconductor device and method for producing the same
12/23/1997	US5700718 Disposing titanium layer on silica substrate, depositing aluminum film, annealing, depositing conductive layer

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