H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/1997
12/30/1997	US5703385 Power integrated circuit ("PIC") structure with a vertical IGBT
12/30/1997	US5703381 Semiconductor integrated circuit
12/30/1997	US5703375 Method and apparatus for ion beam neutralization
12/30/1997	US5703372 For use in an ion implanter
12/30/1997	US5703357 Methods for wavelength discrimination of monochromatic light beams
12/30/1997	US5703195 Polyglycidylphenyl ethers of alkylene or alkyleneoxy chains for use in microelectronics adhesives
12/30/1997	US5703186 Mixed polymers
12/30/1997	US5703138 Oxygen-curable coating composition
12/30/1997	US5702990 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
12/30/1997	US5702989 Method for fabricating a tub structured stacked capacitor for a DRAM cell having a central column
12/30/1997	US5702988 Forming triple-well structure, field isolation regions, channel implants, primary gate and gate oxides for each of logic and memory devices
12/30/1997	US5702987 Method of manufacture of self-aligned JFET
12/30/1997	US5702986 Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges
12/30/1997	US5702985 Hermetically sealed ceramic integrated circuit heat dissipating package fabrication method
12/30/1997	US5702983 Forming a smooth surface on a semiconductor device without etching back the irregular tungsten interconnection layer by forming a bonded aluminum alloy layer without melting the tungsten layer
12/30/1997	US5702982 Method for making metal contacts and interconnections concurrently on semiconductor integrated circuits
12/30/1997	US5702981 Using an etch stop layer of silicon nitride or aluminum nitride
12/30/1997	US5702980 Method for forming intermetal dielectric with SOG etchback and CMP
12/30/1997	US5702979 Method of forming a landing pad structure in an integrated circuit
12/30/1997	US5702978 Sloped silicon nitride etch for smoother field oxide edge
12/30/1997	US5702977 Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer
12/30/1997	US5702976 Shallow trench isolation using low dielectric constant insulator
12/30/1997	US5702975 Method for isolating semiconductor device
12/30/1997	US5702974 Method for fabricating capacitor of semiconductor device
12/30/1997	US5702972 Method of fabricating MOSFET devices
12/30/1997	US5702970 Method for fabricating a capacitor of a semiconductor device
12/30/1997	US5702969 Buried bit line DRAM cells and fabricating methods therefor
12/30/1997	US5702968 Method for fabricating a honeycomb shaped capacitor
12/30/1997	US5702967 Method of fabricating a deep submicron MOSFET device using a recessed, narrow polysilicon gate structure
12/30/1997	US5702966 Method of manufacturing a semiconductor memory device
12/30/1997	US5702965 Flash memory cell and method of making the same
12/30/1997	US5702964 Method for forming a semiconductor device having a floating gate
12/30/1997	US5702963 Using circuit tiles of silicon thin-films which are transferred, interconnected and packaged
12/30/1997	US5702962 Fabrication process for a static induction transistor
12/30/1997	US5702961 Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby
12/30/1997	US5702960 Method for manufacturing polysilicon thin film transistor
12/30/1997	US5702959 Method for making an isolated vertical transistor
12/30/1997	US5702958 Method for the fabrication of bipolar transistors
12/30/1997	US5702957 Method of making buried metallization structure
12/30/1997	US5702956 Removing a top barrier layer over a metal layer, measuring the thickness of silicon dioxide layer, dielectric layer
12/30/1997	US5702870 Applying photoresist; devlopment; etching
12/30/1997	US5702868 High resolution mask programmable via selected by low resolution photomasking
12/30/1997	US5702867 Coating photosensitive film on material to be patterned, selectively exposing surface, diffusing silicon into surface by use of hexamethyl disilazane or tetramethyl disilazane, etching
12/30/1997	US5702862 Alkali soluble resin; a quinone diazide group-containing compound
12/30/1997	US5702861 Blend of alkali soluble resin, quinone diazide compound and an aromatic polyhydroxy compound
12/30/1997	US5702849 Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
12/30/1997	US5702848 Mask for optical lithography using phase shift masking and integrated circuit produced therefrom
12/30/1997	US5702831 Multilayer read only memory; high density, magnetoresistance
12/30/1997	US5702814 Gold wire for bonding
12/30/1997	US5702807 Ceramic circuit board and manufacturing method thereof
12/30/1997	US5702775 Microelectronic device package and method
12/30/1997	US5702773 Generating fluorine radicals in fluorine-based gas, removing charged particles, exposing fluorine-free polyimide to irradiation with radicals which penetrate into polyimide
12/30/1997	US5702767 Non-Aminic photoresist adhesion promoters for microelectronic applications
12/30/1997	US5702620 Sensitive to high energy beams
12/30/1997	US5702573 Method and apparatus for improved low pressure collimated magnetron sputter deposition of metal films
12/30/1997	US5702568 Method of forming a via hole of a semiconductor device with spin-on-glass film sealed by an oxide film
12/30/1997	US5702567 Plurality of photolithographic alignment marks with shape, size and spacing based on circuit pattern features
12/30/1997	US5702566 Using electroconductive photoresist during plasma etching
12/30/1997	US5702564 Flow rate of chlorine plasma is reduced during high density chlorine plasma etching of conductive pattern when the conductive material is substantially removed from the open field
12/30/1997	US5702563 Applying high pressure water spray to polishing pad during conditioning
12/30/1997	US5702562 Monitoring simultaneously plasma emission wavelengths and emission intensities; calculating etching rate and selectivity ratio of etched film and base film
12/30/1997	US5702533 Particulate free vacuum compatible pinch seal
12/30/1997	US5702531 Apparatus for forming a thin film
12/30/1997	US5702530 Distributed microwave plasma reactor for semiconductor processing
12/30/1997	US5702529 Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate and apparatus for making the same
12/30/1997	US5702292 Apparatus and method for loading and unloading substrates to a chemical-mechanical planarization machine
12/30/1997	US5702291 Wafer polishing method and wafer polishing apparatus
12/30/1997	US5702228 Robotic arm supporting an object by interactive mechanism
12/30/1997	US5702049 Angled wire bonding tool and alignment method
12/30/1997	US5701666 Method for manufacturing a stimulus wafer for use in a wafer-to-wafer testing system to test integrated circuits located on a product wafer
12/30/1997	US5701654 Precision fluid head transport
12/30/1997	US5701647 Method for making an isolated sidewall capacitor having a compound plate electrode
12/30/1997	US5701645 Acoustic wave device manufacturing method
12/30/1997	US5701627 Substrate processing apparatus
12/29/1997	EP0814532A2 Resonator
12/29/1997	EP0814515A2 Sensor array
12/29/1997	EP0814514A2 A semiconductor memory device including a capacitor
12/29/1997	EP0814512A2 High-frequency semiconductor device
12/29/1997	EP0814511A2 Plastic ball grid array module
12/29/1997	EP0814510A2 TAB tape and semiconductor device using the TAB tape
12/29/1997	EP0814508A1 Semiconductor device having element with high breakdown voltage
12/29/1997	EP0814507A1 Trench capacitor DRAM cell and method of making the same
12/29/1997	EP0814506A2 Sputtered titanium wiring pattern using a highly purified Ti-target
12/29/1997	EP0814505A1 Optical in-situ monitoring of a process element
12/29/1997	EP0814504A2 Semiconductor mounting substrate having micronized wire and method of manufacturing the same
12/29/1997	EP0814503A2 Solid state radiation detector
12/29/1997	EP0814502A1 Complementary semiconductor device and method for producing the same
12/29/1997	EP0814501A2 Method for etching metal silicide with high selectivity to polysilicon
12/29/1997	EP0814500A2 Method for etching polycide structures
12/29/1997	EP0814499A1 Semiconductor device and method of manufacturing the same
12/29/1997	EP0814498A1 Capacitor and its manufacturing process
12/29/1997	EP0814497A2 Device structure with layer for facilitating passivation of surface states
12/29/1997	EP0814495A2 Adjusting DC bias voltage in plasma chamber
12/29/1997	EP0814494A2 Ion beam machining method and device thereof
12/29/1997	EP0814395A2 Overcurrent sensing circuit for power mos field effect transistor
12/29/1997	EP0814176A2 Method and apparatus for depositing diamond film
12/29/1997	EP0814175A2 CVD of metals using iodide precursor
12/29/1997	EP0814109A1 Photosensitive polyimide precursor and its use for pattern formation
12/29/1997	EP0814083A2 Process for the preparation of 1-methoxy-2-propyl ester of 3-(7-diethylamino-2-oxo-2H-chromene-3-yl)-3-oxo-propionic acid
12/29/1997	EP0813931A1 Method of manufacturing semiconductor wafer

1 ... 5841 5842 5843 5844 5845 5846 5847 5848 5849 5850 5851 5852 5853 5854 5855 5856 5857 5858 5859 5860 5861 ... 6590