H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/1997
12/17/1997	EP0813227A2 RF plasma processors
12/17/1997	EP0813208A2 Semiconductor memory device
12/17/1997	EP0813166A2 Card type memory device and a method for manufacturing the same
12/17/1997	EP0813115A2 Scanning exposure apparatus with surface position detecting system
12/17/1997	EP0813114A2 Antireflective coating compositions
12/17/1997	EP0813113A1 Copolymers and photoresist compositions comprising copolymer resin binder component
12/17/1997	EP0813085A2 Catadioptric system for photolithography
12/17/1997	EP0812932A2 Production of diamond film
12/17/1997	EP0812487A1 Protective circuit for series-connected power semiconductors
12/17/1997	EP0812485A1 Bandgap tuning of semiconductor well structure
12/17/1997	EP0812477A1 An improved laser ablateable material
12/17/1997	EP0812475A1 Bicmos semiconductor device comprising a silicon body with locos and oxide filled groove regions for insulation
12/17/1997	EP0812473A1 Arrangement of electronic components on a carrier strip
12/17/1997	EP0812472A1 Method for forming a structure using redeposition
12/17/1997	EP0812471A1 Microwave power soi-mosfet with high conductivity metal gate
12/17/1997	EP0812470A1 A method of manufacturing a self-aligned vertical bipolar transistor on an soi
12/17/1997	EP0812469A1 Method for manufacturing a microwave vertical bipolar transistor on an soi with buried base metal conductor
12/17/1997	EP0812468A2 A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE
12/17/1997	EP0812434A2 Microcontact printing on surfaces and derivative articles
12/17/1997	EP0812258A1 Electrical feedthroughs for ceramic circuit board support substrates
12/17/1997	EP0640248B1 Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same
12/17/1997	EP0429509B1 Method and apparatus for forming a side wall contact in a nonvolatile electrically alterable memory cell
12/17/1997	CN1168195A Method for forming bump of semiconductor device
12/17/1997	CN1168194A Method of cleaning substrates
12/17/1997	CN1167988A Nonvolatile semiconductor memory
12/17/1997	CN1167667A Apparatus and method for shaping polishing pads
12/17/1997	CN1036740C Dielectrically isolated semiconductor device and method for its manufacture
12/16/1997	US5699311 Semiconductor memory device
12/16/1997	US5699308 Semiconductor memory device having two layers of bit lines arranged crossing with each other
12/16/1997	US5699291 Semiconductor memory device and manufacturing method thereof
12/16/1997	US5699290 Ferroelectric read and write memory and driving method thereof
12/16/1997	US5699266 Method and apparatus for automatically recognizing repeated shapes for data compaction
12/16/1997	US5699234 Stacking of three dimensional high density interconnect modules with metal edge contacts
12/16/1997	US5699223 Method of removing substrate and apparatus for controlling applied voltage
12/16/1997	US5699148 Exposure apparatus and microdevice manufacturing method using the same
12/16/1997	US5699146 Scanning exposure apparatus with velocity calculating means for stage elements
12/16/1997	US5699134 Liquid crystal display panel and method for manufacturing the panel
12/16/1997	US5699035 ZnO thin-film varistors and method of making the same
12/16/1997	US5699008 Thyristor controllable by logic signals
12/16/1997	US5698989 Film sheet resistance measurement
12/16/1997	US5698928 Thin film piezoelectric arrays with enhanced coupling and fabrication methods
12/16/1997	US5698903 Bond pad option for integrated circuits
12/16/1997	US5698902 Semiconductor device having finely configured gate electrodes
12/16/1997	US5698901 Semiconductor device with amorphous carbon layer for reducing wiring delay
12/16/1997	US5698900 Field effect transistor device with single layer integrated metal and retained semiconductor masking
12/16/1997	US5698899 Semiconductor device with first and second sealing resins
12/16/1997	US5698897 Semiconductor device having a plated heat sink
12/16/1997	US5698895 Silicon segment programming method and apparatus
12/16/1997	US5698894 Integrated circuit
12/16/1997	US5698892 Image pickup element and image pickup device having scribe lines composed of two portions with different layer structure
12/16/1997	US5698891 Semiconductor device and method for manufacturing the same
12/16/1997	US5698890 Semiconductor device having bipolar transistor free from leakage current across thin base region
12/16/1997	US5698888 Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode
12/16/1997	US5698885 Semiconductor device and method of manufacturing semiconductor device
12/16/1997	US5698884 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
12/16/1997	US5698883 MOS field effect transistor and method for manufacturing the same
12/16/1997	US5698882 LDD Polysilicon thin-film transistor
12/16/1997	US5698881 MOSFET with solid phase diffusion source
12/16/1997	US5698880 Semiconductor device having a groove with a curved part formed on its side surface
12/16/1997	US5698879 Nonvolatile semiconductor memory device
12/16/1997	US5698878 Plate potential applying structure of trench capacitor cell
12/16/1997	US5698876 Memory standard cell macro for semiconductor device
12/16/1997	US5698875 Metal-semiconductor field effect transistor having reduced control voltage and well controlled pinch off voltage
12/16/1997	US5698873 High density gate array base cell architecture
12/16/1997	US5698872 Semiconductor memory wherein metallic interconnection layer is applied with the same potential as word line and is connected to word line in regions other than memory cells
12/16/1997	US5698871 Heterojunction bipolar transistor
12/16/1997	US5698870 High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
12/16/1997	US5698869 Insulated-gate transistor having narrow-bandgap-source
12/16/1997	US5698868 High-speed heterojunction transistor
12/16/1997	US5698864 Method of manufacturing a liquid crystal device having field effect transistors
12/16/1997	US5698859 Method and device for proximity-effect correction
12/16/1997	US5698496 Filling micro-channels of a non-conducting matrix with a liquid precursor of conductive material, heating and decomposing the dried precursor to form hollow tubular or porous conductive pathways
12/16/1997	US5698474 High speed diamond-based machining of silicon semiconductor die in wafer and packaged form for backside emission microscope detection
12/16/1997	US5698473 From high energy plasma and densified in presence of oxygen to form highly planar interlevel dielectric
12/16/1997	US5698472 Feeding oxygen to surface of layer and heating to form sio2 and carbon oxides, illuminating with vacuum ultraviolet radiation
12/16/1997	US5698468 Refractory metal is deposited over semiconductor, annealing to form silicided structure, oxidizing
12/16/1997	US5698467 Method of manufacturing an insulation layer having a flat surface
12/16/1997	US5698466 For integrated circuits
12/16/1997	US5698465 Process for manufacturing an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
12/16/1997	US5698464 Method of manufacturing a semiconductor device with oxynitride layer
12/16/1997	US5698463 Semiconductor IC with FET and capacitor having side wall spacers and manufacturing method thereof
12/16/1997	US5698462 Method for fabricating microwave semiconductor integrated circuit
12/16/1997	US5698461 Method for fabricating lightly doped drain metal oxide semiconductor field effect transistor
12/16/1997	US5698460 Method of self-aligning an emitter contact in a planar heterojunction bipolar transistor and apparatus thereof
12/16/1997	US5698459 Fabrication of bipolar transistors using selective doping to improve performance characteristics
12/16/1997	US5698458 Multiple well device and process of manufacture
12/16/1997	US5698457 Method for manufacturing high voltage semiconductor device
12/16/1997	US5698456 Double mask hermetic passivation structure
12/16/1997	US5698455 Method for predicting process characteristics of polyurethane pads
12/16/1997	US5698377 Method of forming a resist pattern
12/16/1997	US5698375 Process for formation of capacitor electrode for semiconductor device
12/16/1997	US5698369 Photosensitive composition comprising a sulfonimide compound according to the formula R1 -SO2 -NR3 -SO2 -R2 wherein R1, R2 and R3 each represents an aromatic group or an alkyl group
12/16/1997	US5698352 Semiconductor device containing Si, O and N anti-reflective layer
12/16/1997	US5698350 Forming ultra-fine pattern by diffracting incident light while controlling components vertically incident on a photomask to increase depth of focus and improve resolution
12/16/1997	US5698348 Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask
12/16/1997	US5698347 Light screening patterns defining spaces having differing widths
12/16/1997	US5698346 Photomask-pattern-shape evaluation method, photomask, photomask manufacturing method, photomask-pattern forming method, and exposure method
12/16/1997	US5698152 Solidifying molten cured epoxy resin by cooling and forming tablet with very reduced amount of water, volatile organic compounds; sealing the semiconductor with formed resin tablet with transfer molding
12/16/1997	US5698112 Surrounding the aluminum or alloy layer with protective titanium nitride layers, resistance to chemical substances used for etching sacrificial layer
12/16/1997	US5698072 Dry etching method

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