| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
|---|
| 01/05/1999 | US5856241 Method of manufacturing semiconductor device |
| 01/05/1999 | US5856240 Chemical vapor deposition of a thin film onto a substrate |
| 01/05/1999 | US5856239 Tungsten silicide/ tungsten polycide anisotropic dry etch process |
| 01/05/1999 | US5856238 Method for fabricating metal wire of semiconductor device |
| 01/05/1999 | US5856237 Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer |
| 01/05/1999 | US5856236 Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer |
| 01/05/1999 | US5856235 Heat resistance |
| 01/05/1999 | US5856234 Semiconductors |
| 01/05/1999 | US5856233 Method of forming a field programmable device |
| 01/05/1999 | US5856232 Method for fabricating T-shaped electrode and metal layer having low resistance |
| 01/05/1999 | US5856231 Process for producing high-resistance silicon carbide |
| 01/05/1999 | US5856230 Method for making field oxide of semiconductor device |
| 01/05/1999 | US5856229 Process for production of semiconductor substrate |
| 01/05/1999 | US5856228 Manufacturing method for making bipolar device having double polysilicon structure |
| 01/05/1999 | US5856227 Method of fabricating a narrow polycide gate structure on an ultra-thin gate insulator layer |
| 01/05/1999 | US5856226 Method of making ultra-short channel MOSFET with self-aligned silicided contact and extended S/D junction |
| 01/05/1999 | US5856225 Creation of a self-aligned, ion implanted channel region, after source and drain formation |
| 01/05/1999 | US5856224 Method of fabricating split-gate flash memory |
| 01/05/1999 | US5856223 Method for manufacturing self-aligned split-gate flash memory cells |
| 01/05/1999 | US5856222 Method of fabricating a high density EEPROM cell |
| 01/05/1999 | US5856221 Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC |
| 01/05/1999 | US5856220 Method for fabricating a double wall tub shaped capacitor |
| 01/05/1999 | US5856219 Method of fabricating a high-density dynamic random-access memory |
| 01/05/1999 | US5856218 Bipolar transistor formed by a high energy ion implantation method |
| 01/05/1999 | US5856217 Modulation-doped field-effect transistors and fabrication processes |
| 01/05/1999 | US5856216 Method of manufacturing a semiconductor integrated circuit device including an SRAM |
| 01/05/1999 | US5856215 Method of fabricating a CMOS transistor |
| 01/05/1999 | US5856213 Method of fabricating a programmable function system block using two masks and a sacrificial oxide layer between the bottom metal and an amorphous silicon antifuse structure |
| 01/05/1999 | US5856212 Method of producing semiconductor package having solder balls |
| 01/05/1999 | US5856209 Method of making compound semiconductor device having a reduced resistance |
| 01/05/1999 | US5856208 Epitaxial wafer and its fabrication method |
| 01/05/1999 | US5856206 Method for fabricating bragg reflector using in situ laser reflectometry |
| 01/05/1999 | US5856071 Copolymer of a silicon containing acrylate and another acrylate; polarity cahnges after radiation becoming solublein an aqueous alkali solution |
| 01/05/1999 | US5856067 Transistors, integrated circuits; width different from pattern on mask |
| 01/05/1999 | US5856065 Blend containing photoinitiator and organosilicon compound |
| 01/05/1999 | US5856059 Photosensitive resin composition |
| 01/05/1999 | US5856058 Halation inhibitor which is an esterification product between a specified phenolic compound and a naphthoquinone-1,2-diazide sulfonic acid. |
| 01/05/1999 | US5856054 Method of alignment in exposure step through array error and shot error determinations |
| 01/05/1999 | US5856049 Phase shift mask and method for manufacturing same |
| 01/05/1999 | US5856028 Magnesium-aluminum-silicate glass |
| 01/05/1999 | US5856026 Metalization for interconnecting wiring of devices |
| 01/05/1999 | US5856007 Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices |
| 01/05/1999 | US5856003 Method for forming pseudo buried layer for sub-micron bipolar or BiCMOS device |
| 01/05/1999 | US5855998 Hard material-coated wafer, method of making same, polishing apparatus and polishing method of hard material-coated wafer |
| 01/05/1999 | US5855995 Ceramic substrate for implantable medical devices |
| 01/05/1999 | US5855993 Electronic devices having metallurgies containing copper-semiconductor compounds |
| 01/05/1999 | US5855970 Chemical vapor deposition |
| 01/05/1999 | US5855962 Flowable spin-on insulator |
| 01/05/1999 | US5855957 Optimization of SiO2 film conformality in atmospheric pressure chemical vapor deposition |
| 01/05/1999 | US5855924 Closed-mold for LED alphanumeric displays |
| 01/05/1999 | US5855811 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| 01/05/1999 | US5855804 Removing material with abrasive, selectively preventing contact between abrasive and selected area of substrate |
| 01/05/1999 | US5855803 Template type cavity-formation device for low temperature cofired ceramic (LTCC) sheets |
| 01/05/1999 | US5855792 Rinse water recycling method for semiconductor wafer processing equipment |
| 01/05/1999 | US5855744 Non-planar magnet tracking during magnetron sputtering |
| 01/05/1999 | US5855735 Inducing microfractures using rotating pads, abrasive slurries |
| 01/05/1999 | US5855732 Outer lead bonding apparatus and method of bonding lead to substrate |
| 01/05/1999 | US5855727 Decapsulator for decapsulating small plastic encapsulated device packages |
| 01/05/1999 | US5855726 Vacuum processing apparatus and semiconductor manufacturing line using the same |
| 01/05/1999 | US5855725 Vacuum processing system and method of removing film deposited on inner face of vacuum vessel in the vacuum processing system |
| 01/05/1999 | US5855716 Parallel contact patterning using nanochannel glass |
| 01/05/1999 | US5855693 Monocrystalline insulating layer made of silicon carbide, silicon nitride or ceramic materials. |
| 01/05/1999 | US5855689 Method for etching inside of tungsten CVD reaction room |
| 01/05/1999 | US5855687 Substrate support shield in wafer processing reactors |
| 01/05/1999 | US5855686 Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment |
| 01/05/1999 | US5855685 Plasma enhanced CVD apparatus, plasma enhanced processing apparatus and plasma enhanced CVD method |
| 01/05/1999 | US5855681 Ultra high throughput wafer vacuum processing system |
| 01/05/1999 | US5855677 Method and apparatus for controlling the temperature of reaction chamber walls |
| 01/05/1999 | US5855675 Multipurpose processing chamber for chemical vapor deposition processes |
| 01/05/1999 | US5855669 Method for fabricating grating coupler |
| 01/05/1999 | US5855465 Semiconductor wafer processing carousel |
| 01/05/1999 | US5855280 Cassette light |
| 01/05/1999 | US5855232 Automatic metering/supplying apparatus for granular substances |
| 01/05/1999 | US5855077 Apparatus for drying semiconductor wafers using isopropyl alcohol |
| 01/05/1999 | CA2102079C A dielectric isolated high voltage semiconductor device |
| 01/05/1999 | CA2058483C Process for the chemical vapor deposition of copper |
| 12/30/1998 | WO1998059527A1 Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element |
| 12/30/1998 | WO1998059381A1 Dry-etching of indium and tin oxydes |
| 12/30/1998 | WO1998059380A1 Dry-etching of thin film layers |
| 12/30/1998 | WO1998059379A1 Dry-etching of indium and tin oxides |
| 12/30/1998 | WO1998059374A2 Insulated gate power semiconductor device having a semi-insulating semiconductor substrate |
| 12/30/1998 | WO1998059372A1 Semiconductor integrated circuit and method of fabricating the same |
| 12/30/1998 | WO1998059369A1 Semiconductor package and method for manufacturing the same |
| 12/30/1998 | WO1998059367A1 Plasma reactor for passivating a substrate |
| 12/30/1998 | WO1998059366A1 Metal and metal silicide nitridization in a high density, low pressure plasma reactor |
| 12/30/1998 | WO1998059365A1 CONTROLLING THREADING DISLOCATION DENSITIES IN Ge ON Si USING GRADED GeSi LAYERS AND PLANARIZATION |
| 12/30/1998 | WO1998059364A1 Projection aligner, method of manufacturing the aligner, method of exposure using the aligner, and method of manufacturing circuit devices by using the aligner |
| 12/30/1998 | WO1998059363A1 Detergent for lithography |
| 12/30/1998 | WO1998059350A2 Electronically tunable capacitor |
| 12/30/1998 | WO1998059313A1 Wafer reader including a mirror assembly for reading wafer scribes without displacing wafers |
| 12/30/1998 | WO1998059235A1 Method for focusing during imaging of structured surfaces of disc-shaped objects |
| 12/30/1998 | WO1998059229A2 Pod monitor for use in a controlled environment |
| 12/30/1998 | WO1998059099A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 12/30/1998 | WO1998059098A2 Method and device for producing electrically conductive continuity in semiconductor components |
| 12/30/1998 | WO1998059087A2 Method for bias sputtering |
| 12/30/1998 | WO1998058936A1 Organosilicon nanocluster and process for producing the same |
| 12/30/1998 | WO1998045674A3 Probe tile and platform for large area wafer probing |
| 12/30/1998 | WO1998044538A3 Quartz glass component used in the production of semiconductors |
| 12/30/1998 | EP0887867A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |
| 12/30/1998 | EP0887866A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |