Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/1999
01/26/1999US5864245 Output circuit with overvoltage protection
01/26/1999US5864181 Bi-level digit line architecture for high density DRAMs
01/26/1999US5864180 Semiconductor device and method for manufacturing the same
01/26/1999US5864179 Aluminum like metal wiring for semiconductor devices
01/26/1999US5864178 Semiconductor device with improved encapsulating resin
01/26/1999US5864174 Semiconductor device having a die pad structure for preventing cracks in a molding resin
01/26/1999US5864173 Multi-layer lead frame
01/26/1999US5864172 Low dielectric constant insulation layer for integrated circuit structure and method of making same
01/26/1999US5864171 Semiconductor optoelectric device and method of manufacturing the same
01/26/1999US5864170 Semiconductor device having bonding pad and scribe line
01/26/1999US5864169 Semiconductor device including plated heat sink and airbridge for heat dissipation
01/26/1999US5864168 Integrated circuit
01/26/1999US5864164 Multi-stage ROM structure and method for fabricating the same
01/26/1999US5864163 Fabrication of buried channel devices with shallow junction depth
01/26/1999US5864162 Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
01/26/1999US5864161 Semiconductor device and manufacturing method thereof
01/26/1999US5864160 Transistor device with reduced hot carrier injection effects
01/26/1999US5864159 Insulated gate semiconductor device structure to prevent a reduction in breakdown voltage
01/26/1999US5864158 Trench-gated vertical CMOS device
01/26/1999US5864156 Isolated plugged contacts
01/26/1999US5864155 Semiconductor array with self-adjusted contacts
01/26/1999US5864154 Semiconductor memory device and method for fabricating the same
01/26/1999US5864153 Capacitor structure of semiconductor memory cell and fabrication process thereof
01/26/1999US5864152 Semiconductor memory and method of writing, reading, and sustaining data
01/26/1999US5864151 Semiconductor device
01/26/1999US5864150 Switching device for a liquid crystal display
01/26/1999US5864149 Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
01/26/1999US5864143 High current ion implanter and method of ion implant by the implanter
01/26/1999US5864142 Electron beam exposure apparatus and method of controlling same
01/26/1999US5864119 IR conveyor furnace with controlled temperature profile for large area processing multichip modules
01/26/1999US5863970 Epoxy resin composition with cycloaliphatic epoxy-functional siloxane
01/26/1999US5863963 Halomethylated high performance curable polymers
01/26/1999US5863843 Uniformly heating wafer placed on holder having tapered quartz supports which minimize surface area contacting wafer to prevent wafer deformation during processing
01/26/1999US5863842 Vacuum exhausting apparatus, semiconductor manufacturing apparatus, and vacuum processing method
01/26/1999US5863841 Plasma diffusion control apparatus
01/26/1999US5863839 Sidewall protection for reduced notching of feature surfaces during anisotropic etching of substrate
01/26/1999US5863838 Selectively polishing exposed metal layer on semiconductor substrate with stabilized abrasive mixture containing organic salt which decomposes into oxidizer and surfactant upon contact with metal layer
01/26/1999US5863837 Aligning opening for source and drain electrodes to a gate electrode in one step
01/26/1999US5863835 Filling contact hole with first electroconductive material, forming recess in surrounding dielectric to expose outer sidewall of first electroconductive material, filling recess with second electroconductive material
01/26/1999US5863834 Semiconductor device and method of manufacturing the same
01/26/1999US5863833 Overcoating with refractory metal the nonconductive native oxide layer of first electroconductive material coated onto sides of contact hole, subsequent reaction with metal renders native oxide conductive to reduce contact resistance
01/26/1999US5863832 Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system
01/26/1999US5863831 Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
01/26/1999US5863830 Process for the production of a structure having a thin semiconductor film on a substrate
01/26/1999US5863829 Subjecting bonded wafer to plasma assisted chemical etching to form thin film of active substrate and remove non-bonded peripheral portion of wafer
01/26/1999US5863828 Trench planarization technique
01/26/1999US5863827 Oxide deglaze before sidewall oxidation of mesa or trench
01/26/1999US5863826 Rapid thermal annealing; simplified formation of semiconductor integrated circuit device
01/26/1999US5863825 Alignment mark contrast enhancement
01/26/1999US5863824 Method of forming semiconductor devices using gate electrode length and spacer width for controlling drivecurrent strength
01/26/1999US5863823 Self-aligned edge control in silicon on insulator
01/26/1999US5863822 Method of making non-volatile semiconductor memory devices having large capacitance between floating and control gates
01/26/1999US5863821 Method of fabricating a semiconductor memory device having a tree-typecapacitor
01/26/1999US5863820 Integration of sac and salicide processes on a chip having embedded memory
01/26/1999US5863819 Method of fabricating a DRAM access transistor with dual gate oxide technique
01/26/1999US5863818 Multilevel transistor fabrication method having an inverted, upper level transistor
01/26/1999US5863817 Semiconductor device
01/26/1999US5863816 Fabrication method for chip size semiconductor package
01/26/1999US5863815 Method of manufacturing semiconductor device
01/26/1999US5863814 Electronic package with compressible heatsink structure
01/26/1999US5863813 Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips
01/26/1999US5863812 Simplified chip size packaging
01/26/1999US5863811 Lattice relaxation in the single crystal buffer layer allows single crystal gallium-indium- or aluminum-gallium-nitride layer to crystallize with high quality on the buffer layer regardless lattice constant difference between the layers
01/26/1999US5863810 Method for encapsulating an integrated circuit having a window
01/26/1999US5863809 Manufacture of planar photonic integrated circuits
01/26/1999US5863808 Storage/transportation of wafers in polymer resin case refrigerated to prevent adsorption of volatile organic material, determining adsorption by measuring contact angle of water drop on wafer
01/26/1999US5863807 Manufacturing method of a semiconductor integrated circuit
01/26/1999US5863806 Forming insulating layer on oxide, doping, removing insulating layer, forming photoresist, doping, forming insulating layer, conductive layer, protective layer
01/26/1999US5863805 Method of packaging semiconductor chips based on lead-on-chip (LOC) architecture
01/26/1999US5863712 Improving resolution and a shape accuracy by illuminating the pattern on a mask perpendicular to the top surface with pupil filters having at least two pupil functions with amplitude transmittance distribution asymmetric to pupil center
01/26/1999US5863709 Deep UV photolithography with reduced halation
01/26/1999US5863707 Method for producing ultra-fine interconnection features
01/26/1999US5863706 Processing method for patterning a film
01/26/1999US5863705 Two-layer resist having a storage stable, wet developable top resist of polymer having tert-butylester or tert-butoxy-carbonyloxy blocking groups; sensitive to deep and near ultraviolet radiation; ketone- or sulfone photoiniator
01/26/1999US5863701 Polymers for photoresists used for printing plates and circuit boards
01/26/1999US5863682 Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing
01/26/1999US5863680 Exposure method utilizing alignment of superimposed layers
01/26/1999US5863677 Aligner and patterning method using phase shift mask
01/26/1999US5863659 Silicon wafer, and method of manufacturing the same
01/26/1999US5863603 Bathless electroless deposition of metal film on a substrate surface in a controlled environment using liquid organometallic compound and a reducing agent
01/26/1999US5863602 Coating silicon film onto inner wall of chamber using silicon-based gas, reducing pressure, causing silicon wafer to emit impurities, capture of inpurities by silicon film
01/26/1999US5863598 Method of forming doped silicon in high aspect ratio openings
01/26/1999US5863595 Applying a ceramic coating on an electronic substrate using alcohol solution of silica with vinyl alcohol colloidal silica and partial condensate of rsi(oh).sub.3 where r is selected from the group consisting
01/26/1999US5863446 Electrical means for extracting layer to layer registration
01/26/1999US5863393 Low angle, low energy physical vapor deposition of alloys
01/26/1999US5863376 Cooling mechanism which cools dielectric member for minimization of process drift
01/26/1999US5863375 Apparatus and methods for wafer debonding using a liquid jet
01/26/1999US5863351 Method for cleaning an object soldered with a lead-containing solder
01/26/1999US5863348 Rotating one or more workpieces around two rotational axes; immersing, soaking, and spraying steps in a single heated chamber for cleaning multiple semiconductor elements; draining liquids; gas-dried
01/26/1999US5863344 Removal of impurities from semiconductors using cleaning solutions with tetramethylammonium hydroxide, acetic acid and water
01/26/1999US5863340 Deposition ring anti-rotation apparatus
01/26/1999US5863339 Chamber etching of plasma processing apparatus
01/26/1999US5863338 Apparatus and method for forming thin film
01/26/1999US5863334 Strength-enhanced quartz boat
01/26/1999US5863327 Apparatus for forming materials
01/26/1999US5863324 Process for producing single crystal diamond film
01/26/1999US5863307 Method and slurry composition for chemical-mechanical polish (CMP) planarizing of copper containing conductor layers
01/26/1999US5863170 Modular process system
01/26/1999US5863123 Profile thermocouple of a transverse-type diffusion furnace
01/26/1999US5862974 Wire bonding method and apparatus