Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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01/20/1999 | CN1205783A Mixed solvent system for positive photoresists |
01/20/1999 | CN1205556A Gan group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
01/20/1999 | CN1205554A Trenched semiconductor device and method of fabricating the same |
01/20/1999 | CN1205547A Manufacturing method of semiconductor device having high pressure reflow process and semiconductor device manufactured thereby |
01/20/1999 | CN1205546A Composite transport carrier |
01/20/1999 | CN1205545A Figure measuring setting and method for measuring circuit figure dimensional accuracy and overlapping accuracy |
01/20/1999 | CN1205544A Failure analysis apparatus of semiconductor integrated circuit and method thereof |
01/20/1999 | CN1205543A Bump formation method |
01/20/1999 | CN1205523A Read only memory |
01/20/1999 | CN1205522A Semiconductor device having contact check circuit |
01/20/1999 | CN1205299A Transport module with latching door |
01/20/1999 | CN1205297A Transport module |
01/20/1999 | CN1205252A Ultrasonic cleaning apparatus |
01/19/1999 | US5862302 Thermal processing apparatus having a reaction tube with transparent and opaque portions |
01/19/1999 | US5862166 Semiconductor laser with light emitting slant plane and method of manufacturing the same |
01/19/1999 | US5862147 Semiconductor device on semiconductor wafer having simple wirings for test and capable of being tested in a short time |
01/19/1999 | US5862096 Semiconductor memory device having optimally arranged internal down-converting circuitry |
01/19/1999 | US5862090 Semiconductor memory device having cell array divided into a plurality of cell blocks |
01/19/1999 | US5862081 Multi-state flash EEPROM system with defect management including an error correction scheme |
01/19/1999 | US5862080 Multi-state flash EEprom system with defect handling |
01/19/1999 | US5862076 Fast EPROM array |
01/19/1999 | US5862058 Optical proximity correction method and system |
01/19/1999 | US5862057 Method and apparatus for tuning a process recipe to target dopant concentrations in a doped layer |
01/19/1999 | US5861951 Particle monitoring instrument |
01/19/1999 | US5861944 For exposing a substrate to a pattern formed on a mask |
01/19/1999 | US5861929 Active matrix color display with multiple cells and connection through substrate |
01/19/1999 | US5861866 LSI mask pattern edit apparatus with contour line intensity distribution display method of resolution for lithography |
01/19/1999 | US5861754 Position detection device |
01/19/1999 | US5861680 Photonic device and process for fabricating the same |
01/19/1999 | US5861679 Pattern and method for measuring alignment error |
01/19/1999 | US5861678 Method and system for attaching semiconductor dice to substrates |
01/19/1999 | US5861677 Low resistivity organic polymers, blended with an adhesion promoter which reacts with a low resistivity metal, to form an intermediate bonding layer that passivates and seals the metal layer inside the dielectric layer |
01/19/1999 | US5861676 Method of forming robust interconnect and contact structures in a semiconductor and/or integrated circuit |
01/19/1999 | US5861675 Tungsten nitride fluorine film having good step coverage for a fine hole |
01/19/1999 | US5861674 Multilevel interconnection in a semiconductor device and method for forming the same |
01/19/1999 | US5861673 Method for forming vias in multi-level integrated circuits, for use with multi-level metallizations |
01/19/1999 | US5861671 Voidless tungsten filled hole, used to connect active silicon regions in a semiconductor substrate; underlying tungsten liner, and overlying dual humped, tungsten shape |
01/19/1999 | US5861664 Terminal resistance elements buried and sintered in ceramic wiring board; computers, electronics; high speed transfer of signals |
01/19/1999 | US5861662 Anti-tamper bond wire shield for an integrated circuit |
01/19/1999 | US5861661 Composite bump tape automated bonded structure |
01/19/1999 | US5861659 Semiconductor device |
01/19/1999 | US5861658 Prevents delamination of passivation layer from integrated circuit or metallization ring; corrosion resistance |
01/19/1999 | US5861655 Photoelectric conversion apparatus and image reading apparatus with good crosstalk characteristics |
01/19/1999 | US5861653 Semiconductor device having gaseous isolating layer formed in inter-level insulating layer and process of fabrication thereof |
01/19/1999 | US5861651 Second layer of doped polycrystalline silicon separated by nitrogen doped silicon oxide |
01/19/1999 | US5861649 Trench-type semiconductor memory device |
01/19/1999 | US5861648 Capacitor unit of a booster circuit whose low-voltage operating point margin can be expanded while an increase in area occupied thereby is suppressed |
01/19/1999 | US5861647 VLSI capacitors and high Q VLSI inductors using metal-filled via plugs |
01/19/1999 | US5861643 Self-aligned JFET |
01/19/1999 | US5861642 Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations |
01/19/1999 | US5861641 Customizable logic array device |
01/19/1999 | US5861640 Mesa bipolar transistor with sub base layer |
01/19/1999 | US5861639 Breakover-triggered dipole component having a controlled sensitivity |
01/19/1999 | US5861632 Method for monitoring the performance of an ion implanter using reusable wafers |
01/19/1999 | US5861626 Mercury cadmium telluride infrared filters and detectors and methods of fabrication |
01/19/1999 | US5861609 Method and apparatus for rapid thermal processing |
01/19/1999 | US5861603 Mask structure and method of making the same |
01/19/1999 | US5861601 Microwave plasma processing apparatus and method |
01/19/1999 | US5861347 Method for forming a high voltage gate dielectric for use in integrated circuit |
01/19/1999 | US5861345 In-situ pre-PECVD oxide deposition process for treating SOG |
01/19/1999 | US5861344 Depositing first conductive layer over dielectric layer, performing facet etch of first condctive layer over lip of the contact and sputtering the etched material into lower corner of the contact via, depositing second conductive layer |
01/19/1999 | US5861343 Method for fabricating an aligned opening using a photoresist polymer as a side wall spacer |
01/19/1999 | US5861342 Optimized structures for dummy fill mask design |
01/19/1999 | US5861340 Method of forming a polycide film |
01/19/1999 | US5861339 Recessed isolation with double oxidation |
01/19/1999 | US5861338 Channel stop implant profile shaping scheme for field isolation |
01/19/1999 | US5861337 Forming a semiconductor film of silicon over the substrate, irradiating the film with laser light which exhibit raman shift in the vicinity of 515 cm-1 after irradiation |
01/19/1999 | US5861336 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
01/19/1999 | US5861335 Semiconductor fabrication employing a post-implant anneal within a low temperature high pressure nitrogen ambient to improve channel and gate oxide reliability |
01/19/1999 | US5861334 Method for fabricating semiconductor device having a buried channel |
01/19/1999 | US5861333 Thermal oxidation to create a silicon oxide film, removal of silicon nitride and silicon oxide pad by photolithography and dry etching, doping to create buried n+ type impurity |
01/19/1999 | US5861332 Strontium oxide thin film deposited over ruthenium dioxide, is changed to srruo3 during deposition of the high dielectric film carried out at high temperature; improved chemical, thermal stability of the lower electrode |
01/19/1999 | US5861331 Method for fabricating capacitors of a dynamic random access memory |
01/19/1999 | US5861330 Forming implants with hybrid resists which do not require additional masking steps at the well edges; implants reduce the lifetime of minority carriers in the parasitic transistor, reducing gain of the parasitic transistor |
01/19/1999 | US5861329 Forming a gate and silicon oxide layer on the silicon substrate, gate including polysilicon electrode and dielectric layer, nitriding, first ion implanting on gate, forming spacers of silicon dioxide, masking, ion implanting |
01/19/1999 | US5861327 Fabrication method of gate electrode in semiconductor device |
01/19/1999 | US5861326 Method for manufacturing semiconductor integrated circuit |
01/19/1999 | US5861323 Process for manufacturing metal ball electrodes for a semiconductor device |
01/19/1999 | US5861322 Forming metal blocks via electrolysis using the conductive meltable material as an electrode; separating the interconnection substrate from the initial substrate by heating and melting the meltable material |
01/19/1999 | US5861321 Immersing cadmium (zinc) telluride substrate in solution; diffusion of dopant, partial dissolving; gowing epitaxial layer from mercury cadmium telluride; annealing |
01/19/1999 | US5861320 Position detection mark and position detection method |
01/19/1999 | US5861233 Vapor depositing aluminum mask from alkylaluminum hydride to make trench; removing film; heating; burying inside with oxide; semiconductors |
01/19/1999 | US5861231 Styrene, 4-hydroxystyrene, tert-butyl acrylate terpolymer binder; coating for microelectronic wafer, flat panel display |
01/19/1999 | US5861197 Deposition of high quality conformal silicon oxide thin films on glass substrates |
01/19/1999 | US5861190 Arrangement for growing a thin dielectric layer on a semiconductor wafer at low temperatures |
01/19/1999 | US5861104 Trench isolation with rounded top and bottom corners and edges |
01/19/1999 | US5861103 Reactive ion etching producing semiconductor devices |
01/19/1999 | US5861102 Method for the flattening treatment of silicon single crystal surface |
01/19/1999 | US5861086 Method and apparatus for sputter etch conditioning a ceramic body |
01/19/1999 | US5861066 Method and apparatus for cleaning edges of contaminated substrates |
01/19/1999 | US5861065 Dissociation; flowing gas mixture containing oxygen source; etching; high speed by-product removal; semiconductors |
01/19/1999 | US5861064 Process for enhanced photoresist removal in conjunction with various methods and chemistries |
01/19/1999 | US5861059 Mixing hydrogen with raw material gas such as disilane to control facet formation; adsorption, termination, reducing surface free energy and anisotropy |
01/19/1999 | US5861058 Composite structure and method for the production thereof |
01/19/1999 | US5861055 Slurries of polishing particles suspended in mixtures of soluble film forming polymeric binder, solvent and wetting agent; dissolving film frees particles to polish surface in chemical mechanical polishing |
01/19/1999 | US5861054 Cotaining particles selected from silicon carbide, siliconnitride, graphite dispersed in acidic solvent; semiconductor etching |
01/19/1999 | US5860853 Apparatus for polishing wafers |
01/19/1999 | US5860847 Polishing apparatus |
01/19/1999 | US5860818 Electrical connecting member |
01/19/1999 | US5860640 Semiconductor wafer alignment member and clamp ring |