Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/1999
03/16/1999US5882988 Semiconductor chip-making without scribing
03/16/1999US5882987 Smart-cut process for the production of thin semiconductor material films
03/16/1999US5882986 Semiconductor chips having a mesa structure provided by sawing
03/16/1999US5882985 Reduction of field oxide step height during semiconductor fabrication
03/16/1999US5882984 Implant a reasonable dosage of fluorine ions before forming the field oxide layer in order to reduce the stress of the bird's beak of the field oxide
03/16/1999US5882983 Trench isolation structure partially bound between a pair of low K dielectric structures
03/16/1999US5882982 Trench isolation method
03/16/1999US5882981 Silsesquioxane
03/16/1999US5882980 Process of forming bipolar alignment mark for semiconductor
03/16/1999US5882979 Method for forming controllable surface enhanced three dimensional objects
03/16/1999US5882978 Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor
03/16/1999US5882977 Method of forming a self-aligned, sub-minimum isolation ring
03/16/1999US5882976 Method of fabricating a self-aligned double polysilicon NPN transistor with poly etch stop
03/16/1999US5882975 Method of fabricating salicide-structure semiconductor device
03/16/1999US5882974 High-performance PMOS transistor using a barrier implant in the source-side of the transistor channel
03/16/1999US5882973 Method for forming an integrated circuit having transistors of dissimilarly graded junction profiles
03/16/1999US5882972 Method of fabricating a buried bit line
03/16/1999US5882971 Method of making multi-stage ROM structure
03/16/1999US5882970 Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
03/16/1999US5882969 Method for manufacturing an electrically writeable and erasable read-only memory cell arrangement
03/16/1999US5882968 Capable of improving an insulation characteristic between neighboring electrodes and a storage capacity of a semiconductor device.
03/16/1999US5882967 Process for buried diode formation in CMOS
03/16/1999US5882966 BiDMOS semiconductor device and method of fabricating the same
03/16/1999US5882965 Process for manufacturing an integrated CMOS circuit
03/16/1999US5882964 Gate electrodes of the complementary mos transistors are doped differently
03/16/1999US5882963 Method of manufacturing semiconductor components
03/16/1999US5882962 Method of fabricating MOS transistor having a P+ -polysilicon gate
03/16/1999US5882961 Method of manufacturing semiconductor device with reduced charge trapping
03/16/1999US5882960 Method of preparing a semiconductor having a controlled crystal orientation
03/16/1999US5882959 Multi-level transistor fabrication method having an inverted, upper level transistor which shares a gate conductor with a non-inverted, lower level transistor
03/16/1999US5882958 Damascene method for source drain definition of silicon on insulator MOS transistors
03/16/1999US5882957 Without drilling through-holes and filling the holes with conductive paste.
03/16/1999US5882956 Process for producing semiconductor device
03/16/1999US5882954 Method for adhering a metallization to a substrate
03/16/1999US5882953 Dopant activation of heavily-doped semiconductor by high current densities
03/16/1999US5882952 Metalorganic chemical deposition
03/16/1999US5882950 Fabrication method for horizontal direction semiconductor PN junction array
03/16/1999US5882946 Strontium titanate, titanium oxide
03/16/1999US5882938 Apparatus and method for evaluating contamination caused by organic substances deposited on substrate surface
03/16/1999US5882845 Method and device for the formation of holes in a layer of photosensitive material, in particular for the manufacture of electron sources
03/16/1999US5882844 Chemically amplified positive resist composition
03/16/1999US5882835 Positive photoresist resin and chemical amplified positive photoresist composition containing the same
03/16/1999US5882826 The laminated film is obtained by continuously forming a sicn film on one of or each of sides of a sic film.
03/16/1999US5882825 Production method of a phase shift photomask having a phase shift layer comprising SOG
03/16/1999US5882824 Transparent substrates, light shields and phase shift portions
03/16/1999US5882807 Heat treatment silicon carbide, vapor deposition and impregnation
03/16/1999US5882738 Apparatus and method to improve electromigration performance by use of amorphous barrier layer
03/16/1999US5882722 Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds
03/16/1999US5882539 Wafer processing method and equipment therefor
03/16/1999US5882537 Metallic precipitate monitoring method
03/16/1999US5882535 Fluorocarbon chemistry may be employed for creating contact holes in doped or undoped silicon oxide
03/16/1999US5882534 Method for fabricating a multistage phase shift mask
03/16/1999US5882504 Method of measuring impurities
03/16/1999US5882489 Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
03/16/1999US5882488 Resputtering to achieve better step coverage
03/16/1999US5882468 Thickness control of semiconductor device layers in reactive ion etch processes
03/16/1999US5882459 Method for aligning and laminating substrates to stiffeners in electrical circuits
03/16/1999US5882455 Apparatus and method for forming isotropic multilayer ceramic substrates
03/16/1999US5882451 Method and apparatus for applying an electronic component adhesive
03/16/1999US5882433 Spin cleaning method
03/16/1999US5882426 Object to be cleaned and cleaning body moved relative to each other and contact pressure controlled so not to damage surface of object
03/16/1999US5882425 Semiconductor wafers with post etching residues removed by applying ammonium fluoride with carbon dioxide
03/16/1999US5882423 Gas phase plasma cleaning method is utilized for removing contaminants from the surface of exposed metallic, ceramic and plastic parts on integrated circuit, using a gas mixutre of argon and oxygen
03/16/1999US5882419 Chemical vapor deposition chamber
03/16/1999US5882418 Jig for use in CVD and method of manufacturing jig for use in CVD
03/16/1999US5882417 Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition apparatus
03/16/1999US5882416 Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
03/16/1999US5882413 Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
03/16/1999US5882411 Faceplate thermal choke in a CVD plasma reactor
03/16/1999US5882410 Vapor deposition, barium stronium titanate film of higher dielectric constant and less leakage current
03/16/1999US5882401 Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
03/16/1999US5882399 Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
03/16/1999US5882398 Method of manufacturing single crystal of silicon
03/16/1999US5882397 Crystal pulling method
03/16/1999US5882245 Polymer carrier gears for polishing of flat objects
03/16/1999US5882171 Transport and transfer apparatus
03/16/1999US5882168 Semiconductor processing systems
03/16/1999US5882166 Magazine conveying device
03/16/1999US5882165 Multiple chamber integrated process system
03/16/1999US5882055 Probe for handling microchips
03/16/1999US5881987 Vibration damping apparatus
03/16/1999US5881945 Multi-layer solder seal band for semiconductor substrates and process
03/16/1999US5881888 Wafer die pick-up method
03/16/1999US5881876 Method and vessel for storing a substrate cleaning brush
03/16/1999US5881750 Substrate treating apparatus
03/16/1999US5881748 Apparatus for rinsing wafers adhered with chemical liquid by use of purified water
03/16/1999US5881649 Magnetic transfer system, power transmission mechanism of the magnetic transfer system, and rotational driving member used for the system
03/16/1999US5881455 Method of fabricating through-holed wiring board
03/16/1999CA2151063C C-axis perovskite thin films grown on silicon dioxide
03/16/1999CA2140403C Reducing leakage current in a thin-film transistor with charge carrier densities that vary in two dimensions
03/16/1999CA2017971C Semiconductor mesa structured optical processing devices, with added side- surface recombination centers to improve the speed of operation
03/11/1999WO1999012404A1 Flexible circuits and carriers and process for manufacture
03/11/1999WO1999012339A1 A display type image sensor
03/11/1999WO1999012238A1 Method for treating substrates
03/11/1999WO1999012215A1 Shielded integrated circuit capacitor
03/11/1999WO1999012214A1 Insulated gate semiconductor device and method for manufacturing the same
03/11/1999WO1999012211A1 Bipolar power transistors and manufacturing method
03/11/1999WO1999012210A1 Semiconductor device and method of producing the same
03/11/1999WO1999012209A1 Protective circuit
03/11/1999WO1999012208A1 Electrical interface to integrated device having high density i/o count
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