Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/1999
02/16/1999US5872062 Reactive plasma etching
02/16/1999US5872061 Plasma etch method for forming residue free fluorine containing plasma etched layers
02/16/1999US5872060 Semiconductor device manufacturing method
02/16/1999US5872059 Method of forming complementary type conductive regions on a substrate
02/16/1999US5872058 By reducing the inert gas concentration, sputtering or etching is reduced, resulting in reduced sidewall deposition from the sputtered material. consequently, gaps can be filled without the formation of voids and without damaging circuit elements.
02/16/1999US5872057 Method of forming oxide dielectric layer on refractory metal silicide gate
02/16/1999US5872056 Semiconductor processing methods of forming self-aligned contact openings
02/16/1999US5872055 Method for fabricating polysilicon conducting wires
02/16/1999US5872054 Anti-reflection film and method of manufacturing
02/16/1999US5872053 Forming electrical connections between levels of a semiconductor device.
02/16/1999US5872052 Planarization using plasma oxidized amorphous silicon
02/16/1999US5872051 Process for transferring material to semiconductor chip conductive pads using a transfer substrate
02/16/1999US5872050 Semiconductor device and method of manufacturing thereof
02/16/1999US5872049 Nitrogenated gate structure for improved transistor performance and method for making same
02/16/1999US5872048 Processing methods of forming an electrically conductive plug to a node location
02/16/1999US5872047 Rapid thermal process in which a semiconductor substrate implanted with ions through a thin insulating film is thermally treated at a high temperature for a short time under the condition of elevating the temperature at a great speed
02/16/1999US5872046 With a solution including diluted hydrofluoric acid and an alkyl glycol
02/16/1999US5872045 Method for making an improved global planarization surface by using a gradient-doped polysilicon trench--fill in shallow trench isolation
02/16/1999US5872044 Late process method for trench isolation
02/16/1999US5872043 Method of planarizing wafers with shallow trench isolation
02/16/1999US5872041 Method for fabricating electrodes of a semiconductor capacitor
02/16/1999US5872039 Semiconductor device and manufacturing method of the same
02/16/1999US5872038 Semiconductor device having an elevated active region formed in an oxide trench and method of manufacture thereof
02/16/1999US5872037 Method for manufacturing a vertical mosfet including a back gate electrode
02/16/1999US5872036 Method of manufacturing a split-gate flash memory cell
02/16/1999US5872035 Method of forming a floating gate in a flash memory device
02/16/1999US5872034 EPROM in double poly high density CMOS
02/16/1999US5872033 Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
02/16/1999US5872031 Exposing layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide during the exposing step,hydrogenation of
02/16/1999US5872030 Method of improving beta ratio in SRAM and device manufactured thereby
02/16/1999US5872029 Method for forming an ultra high density inverter using a stacked transistor arrangement
02/16/1999US5872028 Method of forming power semiconductor devices with controllable integrated buffer
02/16/1999US5872026 Process of fabricating an integrated circuit die package having a plurality of pins
02/16/1999US5872025 Method for stacked three dimensional device manufacture
02/16/1999US5872022 Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser
02/16/1999US5872021 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode
02/16/1999US5872019 Method for fabricating a field emitter array incorporated with metal oxide semiconductor field effect transistors
02/16/1999US5872017 In-situ epitaxial passivation for resistivity measurement
02/16/1999US5871886 Patterning, dry etching, using photoresist mask; integrated circuit wafers
02/16/1999US5871885 Inclined wall made less steep by controlling ratio of etching rate
02/16/1999US5871874 Mask pattern forming method capable of correcting errors by proximity effect and developing process
02/16/1999US5871870 Mask for forming features on a semiconductor substrate and a method for forming the mask
02/16/1999US5871869 Phase shifting mask and method of manufacturing the same
02/16/1999US5871868 Lamination a dielectric layer on surface, forming a protective layer with photolithographic mask, machining to shape dielectric layer onto a surface of a substrate to form a laminate structure;
02/16/1999US5871853 Metal oxide crystal for thin film capacitors
02/16/1999US5871826 Lasers and radiation layers with ablation
02/16/1999US5871812 Apparatus and method for depositing molecular impurities on a semiconductor wafer
02/16/1999US5871811 Method for protecting against deposition on a selected region of a substrate
02/16/1999US5871782 Transfer molding apparatus having laminated chase block
02/16/1999US5871659 Dry etching process for semiconductor
02/16/1999US5871658 Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers
02/16/1999US5871630 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
02/16/1999US5871629 Pins and grids for conductive contactors
02/16/1999US5871626 Flexible continuous cathode contact circuit for electrolytic plating of C4, TAB microbumps, and ultra large scale interconnects
02/16/1999US5871610 Apparatus for automatically mounting a plurality of semiconductor chips on a lead frame
02/16/1999US5871588 Programmable ultraclean electromagnetic substrate rotation apparatus and method for microelectronics manufacturing equipment
02/16/1999US5871587 Processing system for semiconductor device manufacture of otherwise
02/16/1999US5871586 Chemical vapor deposition
02/16/1999US5871584 Processing apparatus and processing method
02/16/1999US5871583 Apparatus for producing silicon single crystal
02/16/1999US5871582 Melt receiver for a semiconductor single-crystal manufacturing device
02/16/1999US5871581 Single crystal pulling apparatus
02/16/1999US5871578 Methods for holding and pulling single crystal
02/16/1999US5871321 For use in a process environment
02/16/1999US5871151 Radiant hydronic bed warmer
02/16/1999US5871141 Fine pitch bonding tool for constrained bonding
02/16/1999US5870881 Box closing apparatus
02/16/1999US5870822 Flip chip attachment
02/16/1999US5870820 IC mounting/demounting system and mounting/demounting head therefor
02/16/1999US5870793 Brush for scrubbing semiconductor wafers
02/16/1999US5870792 Apparatus for cleaning wafers and discs
02/16/1999CA2123905C Metal powder composition for metallization and a metallized substrate
02/16/1999CA2116766C Solder bump fabrication method and solder bumps formed thereby
02/16/1999CA2067565C Deposition of tungsten
02/16/1999CA2048675C Fermi threshold field effect transistor
02/11/1999WO1999007069A1 System for compensating for temperature induced delay variation in an integrated circuit
02/11/1999WO1999007018A1 Semiconductor structure with a silicon carbide material base, with several electrically different sub-regions
02/11/1999WO1999007016A1 Wafer marking
02/11/1999WO1999007015A1 Conductive epoxy flip-chip on chip
02/11/1999WO1999007013A1 Read-only memory and method for the production thereof
02/11/1999WO1999007012A1 Process for manufacturing integrated mos circuits
02/11/1999WO1999007011A1 Method for configuring semiconductors with high precision, good homogeneity and reproducibility
02/11/1999WO1999007010A1 Detergent for processes for producing semiconductor devices or producing liquid crystal devices
02/11/1999WO1999007000A2 Two bit eeprom using asymmetrical charge trapping
02/11/1999WO1999006996A1 Method for nano-structuring amorphous carbon layers
02/11/1999WO1999006823A1 System for detecting anomalies and/or features of a surface
02/11/1999WO1999006610A1 Method and apparatus for detecting the endpoint of a chamber cleaning
02/11/1999WO1999006305A1 Wafer enclosure with door
02/11/1999WO1999006182A1 Polishing semiconductor wafers
02/11/1999WO1999006163A1 Apparatus for treating semiconductor wafers
02/11/1999WO1999006110A1 Cluster tool method and apparatus using plasma immersion ion implantation
02/11/1999WO1998052207A3 Central coil design for ionized metal plasma deposition
02/11/1999DE19835008A1 III-V semiconductor production by MOVPE
02/11/1999DE19803407A1 Wire bonding method for semiconductor device manufacture
02/11/1999DE19801557A1 Semiconductor device with contact test circuit
02/11/1999DE19733940A1 Installation for coating plate shaped substrates with thin layers by cathode sputtering
02/11/1999DE19731203A1 CMOS-Schaltung und Verfahren zu ihrer Herstellung CMOS circuit and method for their preparation
02/10/1999EP0896501A2 Mounting structure for one or more semiconductor devices
02/10/1999EP0896405A2 Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device
02/10/1999EP0896373A2 Dry etching method of metal oxide/photoresist film laminate