Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/1999
02/18/1999WO1999007518A1 Continuously variable planarization and polishing pad system
02/18/1999WO1999007516A1 A carrier head with local pressure control for a chemical mechanical polishing apparatus
02/18/1999WO1999007515A1 Improved polishing pads and methods relating thereto
02/18/1999WO1998052211A3 Integrated cmos circuit configuration, and production of same
02/18/1999WO1998051837A3 Chemical vapour deposition precursors
02/18/1999WO1998034268A3 Fabrication method for reduced-dimension integrated circuits
02/18/1999WO1998032159A3 Mounting structure and mounting process from semiconductor devices
02/18/1999DE19739231A1 Aluminium@-germanium@-copper@ alloy sputter deposition
02/18/1999DE19738512A1 Doped diamond layer of a microelectronic component
02/18/1999DE19735399A1 Gas piping system especially for a horizontal or vertical wafer treatment furnace
02/18/1999DE19734985A1 Transistor component for power application
02/18/1999DE19734635A1 Component separation method for removal from foil
02/18/1999DE19734509A1 Leistungstransistorzelle Power transistor cell
02/18/1999DE19734317A1 Die bonder for semiconductor manufacturing
02/18/1999DE19733559A1 MOSFET production
02/18/1999DE19733520A1 Verfahren zur Nanostrukturierung von amorphen Kohlenstoffschichten Method for nanostructuring of amorphous carbon films
02/18/1999DE19733410A1 Wafermarkierung Wafer marking
02/18/1999DE19733351A1 Power MOSFET
02/18/1999DE19733349A1 Verfahren zur Herstellung von integrierten MOS-Schaltungen A process for the production of integrated MOS circuits
02/18/1999DE19732870A1 Semiconductor read-only memory cell, e.g. EEPROM cell
02/18/1999DE19731738A1 Überprüfung und Korrektur fehlerhafter Kontaktanordnungen von integrierten Halbleiterbauelementen Checking and correcting faulty contact arrangements of integrated semiconductor devices
02/18/1999CA2299374A1 Process for applying or removing materials
02/17/1999EP0897215A2 Surface acoustic wave device
02/17/1999EP0897194A1 Method for manufacturing a BiCMOS semiconductor device
02/17/1999EP0897193A2 Process of making a multilevel metallization scheme with high planarization degree
02/17/1999EP0897192A1 Silicon single crystal and process for producing single-crystal silicon thin film
02/17/1999EP0897145A1 Integrated circuit for supplying a clock signal and method for constructing the same
02/17/1999EP0897143A2 Band gap reference voltage source and method for its operation
02/17/1999EP0897024A1 Process for epitaxy on a silicon substrate containing zones highly doped with arsenic
02/17/1999EP0896859A2 Wafer polishing apparatus
02/17/1999EP0896735A1 Storage cell arrangement in which vertical mos transistors have at least three different threshold voltages depending on stored data, and method of producing said arrangement
02/17/1999EP0896734A1 All-metal, giant magnetoresistive, solid-state component
02/17/1999EP0896732A1 Sputtering installation with two longitudinally placed magnetrons
02/17/1999EP0896643A1 Method and apparatus for growing oriented whisker arrays
02/17/1999EP0609327B1 Processing system
02/17/1999CN1208368A Fabricating interconnects and tips using sacrificial substrates
02/17/1999CN1208320A Reel housing for connection line
02/17/1999CN1208252A Semiconductor device and its manufacturing method
02/17/1999CN1208251A Method for manufacturing semiconductor device
02/17/1999CN1208250A Method for manufacturing semiconductor devices
02/17/1999CN1208249A Producing method of internal barrier layer of semiconductor and semiconductor element with the same barrier layer
02/17/1999CN1208248A Mechanical-chemical polishing method for semiconductor or insulation material layer
02/17/1999CN1208247A Method of forming fluorine-added insulating film
02/17/1999CN1208246A Method and apparatus for separating composite member using fluid
02/17/1999CN1208245A Dose control for use in ion implanter
02/16/1999US5872908 IC with isolated analog signal path for testing
02/16/1999US5872889 Apparatus and method for rapid thermal processing
02/16/1999US5872863 Component detection method
02/16/1999US5872738 Semiconductor integrated circuit device for enabling easy confirmation of discrete information
02/16/1999US5872737 Semiconductor integrated circuit device in which influence of power supply noise on internal circuitry during operation of input/output buffer is prevented
02/16/1999US5872734 Semiconductor nonvolatile memory device and computer system using the same
02/16/1999US5872732 Nonvolatile memory
02/16/1999US5872724 Simulation apparatus and simulation method for semiconductor integrated circuit
02/16/1999US5872719 Method of wiring semiconductor integrated circuit and semiconductor integrated circuit
02/16/1999US5872716 Semiconductor integrated logic circuit device using a pass transistor
02/16/1999US5872697 Integrated circuit having integral decoupling capacitor
02/16/1999US5872696 Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
02/16/1999US5872694 Method and apparatus for determining wafer warpage for optimized electrostatic chuck clamping voltage
02/16/1999US5872633 Methods and apparatus for detecting removal of thin film layers during planarization
02/16/1999US5872617 Scanning type exposure apparatus and device manufacturing method
02/16/1999US5872504 Semiconductor structure ladder network configuration
02/16/1999US5872485 Dielectric line waveguide which forms electronic circuits
02/16/1999US5872479 Apparatus for regulating substrate voltage in semiconductor device
02/16/1999US5872459 Method of testing integrated circuits
02/16/1999US5872415 Microelectronic structures including semiconductor islands
02/16/1999US5872405 Laser wire bonding for wire embedded dielectrics to integrated circuits
02/16/1999US5872404 Interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
02/16/1999US5872403 Package for a power semiconductor die and power supply employing the same
02/16/1999US5872402 Interlayer insulating film for semiconductor device
02/16/1999US5872401 Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD
02/16/1999US5872399 Solder ball land metal structure of ball grid semiconductor package
02/16/1999US5872396 Semiconductor device with plated heat sink
02/16/1999US5872395 Bent tip method for preventing vertical motion of heat spreaders during injection molding of IC packages
02/16/1999US5872392 Semiconductor device and a method of fabricating the same
02/16/1999US5872391 Bipolar junction transistors having an increased safe operating area
02/16/1999US5872390 For a semiconductor device
02/16/1999US5872389 Semiconductor device having a fuse layer
02/16/1999US5872388 Semiconductor device and method for fabricating the same
02/16/1999US5872387 Deuterium-treated semiconductor devices
02/16/1999US5872386 For multi-channel diodes
02/16/1999US5872385 Conductive interconnect structure and method of formation
02/16/1999US5872384 Component arrangement having magnetic field controlled transistor
02/16/1999US5872383 Semiconductor device and method of manufacturing the same
02/16/1999US5872382 Low junction leakage mosfets with particular sidewall spacer structure
02/16/1999US5872381 Semiconductor device and its manufacturing method
02/16/1999US5872378 Dual thin oxide ESD network for nonvolatile memory applications
02/16/1999US5872377 Power semiconductor devices having highly integrated unit cells therein
02/16/1999US5872376 Oxide formation technique using thin film silicon deposition
02/16/1999US5872375 Semiconductor device including a pair of field effect transistors formed in a depression
02/16/1999US5872374 Vertical semiconductor device
02/16/1999US5872373 Dram-capacitor structure
02/16/1999US5872370 TFT with reduced channel length and parasitic capacitance
02/16/1999US5872369 Solid-state antenna switch and field-effect transistor
02/16/1999US5872365 UV irradiation apparatus
02/16/1999US5872338 For supporting one or more electronic components
02/16/1999US5872170 Hydrosilylation curable electrically conductive silicone elastomer composition containing an acrylic functional group-containing organopolysiloxane
02/16/1999US5872066 Method of forming inter-metal dielectric layer for WVIA process
02/16/1999US5872065 Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry
02/16/1999US5872064 Plasma enhanced chemical vapor deposition
02/16/1999US5872063 Self-aligned contact structures using high selectivity etching