| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 02/23/1999 | US5874361 Method of processing a wafer within a reaction chamber |
| 02/23/1999 | US5874360 Manufacture of semiconductor devices |
| 02/23/1999 | US5874359 Photolithography; non-short circuiting |
| 02/23/1999 | US5874358 Undercut etching into composite electroconductive layer beneath dielectric layer and filling aperture with conductor material to form interlocking connection |
| 02/23/1999 | US5874357 Method of forming wiring structure of semiconductor device |
| 02/23/1999 | US5874356 Method for forming zig-zag bordered openings in semiconductor structures |
| 02/23/1999 | US5874355 Method to prevent volcane effect in tungsten plug deposition |
| 02/23/1999 | US5874354 Method for electrically connecting a semiconductor chip to at least one contact surface and smart card module and smart card produced by the method |
| 02/23/1999 | US5874353 Method of forming a self-aligned silicide device |
| 02/23/1999 | US5874352 Doping impurities at high concentration in upper section of gate electrode and low concentration in gate dielectric film to avoid shifting of transistor threshold voltage |
| 02/23/1999 | US5874351 Sputtered metal silicide film stress control by grain boundary stuffing |
| 02/23/1999 | US5874349 Coating indium phosphide substrate with intermetallic buffer layer prior to deposition of the group ii-vi compound thin film |
| 02/23/1999 | US5874348 Semiconductor wafer and method of manufacturing same |
| 02/23/1999 | US5874347 Method for fabricating field oxide isolation region for semiconductor devices |
| 02/23/1999 | US5874346 Subtrench conductor formation with large tilt angle implant |
| 02/23/1999 | US5874345 Tetraethoxysilane |
| 02/23/1999 | US5874344 Dopant is inserted into bare silicon; then low temperatureannealing |
| 02/23/1999 | US5874343 Variations in dopes concnetration |
| 02/23/1999 | US5874342 Process for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation media |
| 02/23/1999 | US5874341 Method of forming trench transistor with source contact in trench |
| 02/23/1999 | US5874340 Method for fabrication of a non-symmetrical transistor with sequentially formed gate electrode sidewalls |
| 02/23/1999 | US5874339 Read only memory |
| 02/23/1999 | US5874338 MOS-technology power device and process of making same |
| 02/23/1999 | US5874337 Method of forming eeprom cell with channel hot electron programming |
| 02/23/1999 | US5874336 Vertical anisotropic etching |
| 02/23/1999 | US5874335 Method of fabricating DRAM capacitors |
| 02/23/1999 | US5874334 Forming silicon nitride spacers |
| 02/23/1999 | US5874333 Controlling temperature |
| 02/23/1999 | US5874332 Semiconductor memory device having a memory cell capacitor and a fabrication process thereof |
| 02/23/1999 | US5874331 Method of manufacturing CMOS semiconductor devices by forming a salicide structure |
| 02/23/1999 | US5874330 Method for fabricating semiconductor device |
| 02/23/1999 | US5874329 Method for artificially-inducing reverse short-channel effects in deep sub-micron CMOS devices |
| 02/23/1999 | US5874328 Reverse CMOS method for dual isolation semiconductor device |
| 02/23/1999 | US5874327 Fabricating a semiconductor device using precursor CMOS semiconductor substrate of a given configuration |
| 02/23/1999 | US5874326 Method for fabricating thin film transistor |
| 02/23/1999 | US5874325 Method of manufacturing semiconductor device with gettering and isolation |
| 02/23/1999 | US5874324 Method of sealing electronic component with molded resin |
| 02/23/1999 | US5874322 Method and apparatus for applying atomized adhesive to a leadframe for chip bonding |
| 02/23/1999 | US5874321 Package integrated circuit having thermal enhancement and reduced footprint size |
| 02/23/1999 | US5874320 Doping with magnesium |
| 02/23/1999 | US5874318 Dishing and erosion monitor structure for damascene metal processing |
| 02/23/1999 | US5874317 Trench isolation for integrated circuits |
| 02/23/1999 | US5874201 Dual damascene process having tapered vias |
| 02/23/1999 | US5874200 Method for forming a pattern preventing water mark formation |
| 02/23/1999 | US5874199 Method of forming oversized solder bumps |
| 02/23/1999 | US5874198 Charged particle beam transfer method |
| 02/23/1999 | US5874195 Positive-working photoresist composition |
| 02/23/1999 | US5874190 Using alignment marks on back of workpiece, positioning of the mask to the workpiece by means of light from light radiation device without the workpiece being in place, positioning marks relative to marks of workpiece, projecting pattern, exposing |
| 02/23/1999 | US5874189 Coating a layer of photoresist to the wafer, optimizing the number of semiconductors imprinted on a wafer in symmetrical arrangement in order to optimize fabrication cost by varying the side/length ratio, aligning mask over wafer for etching |
| 02/23/1999 | US5874131 CVD method for forming metal-containing films |
| 02/23/1999 | US5874128 First and second rotation devices for rotating connectors and wafers about first and second parallel axes; for photoetching |
| 02/23/1999 | US5874014 Durable plasma treatment apparatus and method |
| 02/23/1999 | US5874013 Semiconductor integrated circuit arrangement fabrication method |
| 02/23/1999 | US5874012 Plasma processing apparatus and plasma processing method |
| 02/23/1999 | US5874011 Laser-induced etching of multilayer materials |
| 02/23/1999 | US5873977 Introducing 1,1,1,2-tetrafluoro-2-chloroethane into chamber containing substrate, producing glow discharge |
| 02/23/1999 | US5873948 Method for removing etch residue material |
| 02/23/1999 | US5873947 Ultra-low particle disk cleaner |
| 02/23/1999 | US5873942 Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps |
| 02/23/1999 | US5873769 Temperature compensated chemical mechanical polishing to achieve uniform removal rates |
| 02/23/1999 | US5873566 Locator actuation apparatus |
| 02/23/1999 | US5873512 Application of low temperature metallurgical paste to form a bond structure to attach an electronic component to a carrier |
| 02/23/1999 | US5873511 Apparatus and method for forming solder bonding pads |
| 02/23/1999 | US5873468 Thin-plate supporting container with filter means |
| 02/23/1999 | US5873402 Method of making a casing for receiving electronic components or switching circuits |
| 02/23/1999 | US5873381 Wet treatment apparatus for semiconductor wafer |
| 02/23/1999 | US5873380 Wafer cleaning apparatus |
| 02/23/1999 | US5873177 Spin dryer and substrate drying method |
| 02/23/1999 | US5873162 Technique for attaching a stiffener to a flexible substrate |
| 02/23/1999 | CA2074648C Polyimide multilayer wiring substrate and method for manufacturing the same |
| 02/23/1999 | CA2073030C Method of making silicon quantum wires |
| 02/23/1999 | CA2044497C Surface treating agent for aluminum line pattern substrate |
| 02/23/1999 | CA2008946C Vapor-phase epitaxial growth method |
| 02/18/1999 | WO1999008498A1 Contact arrangement linking two substrates and method for the production of said contact arrangement |
| 02/18/1999 | WO1999008328A1 Integrated electric circuit with capacitor |
| 02/18/1999 | WO1999008326A1 Power transistor cell |
| 02/18/1999 | WO1999008325A2 Electrode means, with or without functional elements and an electrode device formed of said means |
| 02/18/1999 | WO1999008322A1 Semiconductor with metal coating on its rear surface |
| 02/18/1999 | WO1999008319A1 Integrated circuit with at least two differently doped zones, electrically connected to each other, and method for producing said circuit |
| 02/18/1999 | WO1999008318A1 Method for producing an interconnection path through a semiconductor material |
| 02/18/1999 | WO1999008317A1 Integrated electric circuit with a passivation layer |
| 02/18/1999 | WO1999008316A1 Method for making a thin film of solid material |
| 02/18/1999 | WO1999008315A1 Scanning exposure method, scanning aligner, method of manufacturing the scanning aligner, and synchronization error analysing method |
| 02/18/1999 | WO1999008314A1 Semiconductor integrated circuit device and method of fabrication thereof |
| 02/18/1999 | WO1999008313A1 Apparatus and method for processing an object |
| 02/18/1999 | WO1999008312A1 Method of drying semiconductor wafers using hot deionized water and infrared drying |
| 02/18/1999 | WO1999008311A1 Ceramic-coated heating assembly for high temperature processing chamber |
| 02/18/1999 | WO1999008308A1 Plasma vapor deposition with coil sputtering |
| 02/18/1999 | WO1999008307A1 Method for monitoring the performance of an ion implanter using reusable wafers |
| 02/18/1999 | WO1999008306A1 Semiconductor process compensation utilizing non-uniform ion implantation methodology |
| 02/18/1999 | WO1999008224A1 Fourier filtering mechanism for inspecting wafers |
| 02/18/1999 | WO1999008156A1 Laser-illuminated stepper or scanner with energy sensor feedback |
| 02/18/1999 | WO1999008133A2 Stepper or scanner having two energy monitors for a laser |
| 02/18/1999 | WO1999008099A1 Method for applying or removing material |
| 02/18/1999 | WO1999008057A2 Method and apparatus for drying substrates |
| 02/18/1999 | WO1999007925A1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
| 02/18/1999 | WO1999007924A1 Apparatus and method for the in-situ generation of dopants |
| 02/18/1999 | WO1999007915A1 Mini-batch process chamber |
| 02/18/1999 | WO1999007913A1 Modulated power for ionized metal plasma deposition |
| 02/18/1999 | WO1999007912A2 Single substrate load lock with offset cool module and buffer chamber |